National Institute Of Materials Physics - Romania

Diodes processed on n-type epitaxial silicon with a thickness of 25, 50 and 75 mu m had been irradiated with reactor neutrons and high-energy protons (24 GeV/c) up to integrated fluences of Phi(eq) = 10(16) cm(-2). Systematic experiments on radiation-induced damage effects revealed the following results: in contrast to standard and oxygen-enriched float zone (FZ) silicon devices no space charge sign inversion was observed after irradiation. It is shown that the radiation-generated concentration of deep acceptors, dominating the behavior of n-type FZ diodes, is compensated by creation of shallow donors. Thus a positive space charge is maintained throughout the irradiation up to the highest fluence and even during prolonged elevated-temperature annealing cycles. Defect analysis studies using thermally stimulated current measurements attribute the effect to a damage-induced shallow donor at E-C-0.23 eV. It is argued that, as in the case of thermal donors, oxygen dimers, out diffusing from the Cz substrate during the diode processing, are responsible precursers. Results from extensive annealing experiments at elevated temperatures are verified by comparison with prolonged room-temperature annealing. These results showed that in contrast to FZ detectors, which always have to be cooled, room-temperature storage during beam off periods of future elementary particle physics experiments would even be beneficial for n-type epi-silicon detectors. A dedicated experiment at CERN-PS had successfully proven this expectation. It was verified, that in such a scenario the depletion voltage for the epi-detector could always be kept at a moderate level throughout the full S-LHC operation (foreseen upgrade of the large hadron collider). Practically no difference with respect to FZ-silicon devices was found in the damage-induced bulk generation current. The charge trapping measured with Sr-90 electrons (mip's) is also almost identical to what was expected. A charge collection efficiency of 60% (2500 e) in 50 mu m n-type epi-diodes after 24 GeV/c proton irradiation with Phi(eq) = 6.2 x 10(15) cm(-2) was reported recently, independent of the operating temperature down to -20 degrees C. (c) 2006 Elsevier B.V. All rights reserved.

Pure and L-alanine doped Triglycine sulphate (TGS) crystals were grown in paraelectric phase (similar to 52 degrees C). Doped crystals show unequal growth rates along the ferroelectric axis. Pure TGS crystals show peculiar dielectric behavior in the ferroelectric phase, after crossing up and down the Curie point in two successive runs between room temperature and 80 degrees C. Much higher and unstable permittivity was found returning in the ferroelectric phase. At constant temperature (35 degrees C), permittivity follows a relaxation process, characterized by two relaxation times. L-Alanine doped TGS crystal shows more than one order of magnitude smaller permittivity and dielectric losses. Internal bias field of similar to 1 kV/cm, induced by the dopant, made the crystal almost monodomain and pined polarization in one direction. Pyroelectric coefficient measurements were performed at constant heating rate of the samples, using a computer controlled He cryostat and Keithley 6517 electrometer. The temperature dependence of P+ polarization component, obtained by computer integration of the pyroelectric coefficient, was measured on a large temperature interval (-20/ +80 degrees C). Pyroelectric coefficient of the doped samples was also measured by the same procedure, using a dc bias electric field, pointing in the opposite direction to the pined polarization. The polarization could be reversed, on the whole temperature range, by dc fields higher than bias or coercive field. Surprisingly, for the first time, the pyroelectric coefficient (p) was found constant on quite large temperature intervals. Doped TGS crystals show much smaller values of permittivity epsilon(r) versus the pure one and consequently, get higher figure of merit M = p/epsilon(r). The pyroelectric coefficient of this material can be tailored to become constant on a defined temperature range, under a dc field control. This characteristic makes this material valuable to be used as pyroelectric material for IR devices. (c) 2006 Elsevier B.V. All rights reserved.

The (Zr0.8Sn0.2)TiO4 material (ZST), has been prepared by solid state reaction and characterized. The samples were sintered in the temperature range of 1260-1320 degrees C for 2 h. The effects of sintering parameters like sintering temperature (T-s) and MgO addition (0.2 wt.%) on structural and dielectric properties were investigated. Bulk density increases from 4900 to 5050 kg/m(3) with the increase of sintering temperature. The effect of MgO addition is to lower the sintering temperature in order to obtain well sintered samples with high value of bulk density. The material exhibits a dielectric constant epsilon(r) similar to 37 and high values of the Q x f product, greater than 45,000, at microwave frequencies. The dielectric properties make the ZST material very attractive for microwave applications such as dielectric resonators, filters, dielectric antennas, substrates for hybrid microwave integrated circuits, etc. (c) 2006 Elsevier B.V. All rights reserved.

Solid solutions Ba-1 (-) xSrxTiO3 (BST) are of high technological importance, particularly in microwave domain. Barium titanate has "naturally" three transitions, between four stable ferroelectric phases: (C) cubic, (T) tetragonal, (0) orthorhombic, (R) rhombohedral. Jaffe et al. [B. Jaffe, W.R. Cook, H. Jaffe, Piezoelectric Ceramics, Academic Press, 1971] has given the dependence of the transition temperatures up to 30% of Sr content. We have extrapolated these temperatures and we have found that some phases might disappear at higher Sr concentrations. A family of solid solutions with x = 25, 50, 75, 90% was prepared by standard solid-state reaction and sintered at 1230 and 1260 degrees C, respectively. The permitivities and the dielectric losses were measured with a self-acting bridge (1 kHz), on a large temperature range (+/- 200 degrees C). The composition x = 25% shows three peak values of permittivity as expected, while the composition x = 50%, only two peak values, corresponding to phase transitions cubic-tetragonal-rhombohedral, phase orthorhombic being excluded. Compositions with x >= 63%, Sr shows only one peak value corresponding to a genuine transition cubic-rhombohedral. The cubic transition to several lower phases shows almost a linear decrease of the Curie point with the increase of Sr fraction. For Sr concentration x >= 80%, the Curie point appears to fall more rapidly than linear. To our best knowledge, there is for the first time, this effect is reported. (c) 2006 Elsevier B.V. All rights reserved.

Shallow defect levels in floating zone (FZ) and diffusion oxygenated FZ (DOFZ) silicon, before and after irradiation with a Co-60 gamma-source up to 300 Mrad, have been studied by thermally stimulated currents (TSC) and deep level transient spectroscopy (DLTS) in the temperature range 4.2-110 K. Besides vacancy oxygen (VO) and interstitial-substitutional carbon (CiCs) emissions, several TSC peaks have been observed. A trap with an activation energy of 11 meV has been observed at 6 K only in irradiated DOFZ. Two hole traps at 80 meV and 95 meV have been observed both in irradiated FZ and DOFZ, while a trap at 100 meV, related to an interstitial-oxygen (IO2) complex, has been revealed only in irradiated DOFZ. A TSC peak close to 24 K has been resolved into two components, whose concentrations are independent of irradiation fluence: a trap at 55 meV and a level which remains charged after emission at 80 meV. Our measurements confirm the formation, only in DOFZ, of a radiation induced donor at 230 meV. It appears to be responsible for the improved radiation hardness of oxygenated Si together with the suppression of deep acceptors, since no shallower radiation-induced donors have been detected in DOFZ samples.

PbZr1-XTiXO3 (PZT) film was prepared by addition of polymer polyvinylpirrolidone (PVP) in the PZT precursor and hydrolysis of the PZT precursor sol. Porous thin films were prepared by spin coating on Pt-coated Si substrate. The structure of the films was investigated by X-ray diffraction (XRD). (100)-oriented PZT 20180 film was obtained by hydrolysis of sol. PVP addition leads to the (110)-orientation of the film. The surface microstructure of the films was characterised with Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The surface profile indicates a films roughness of 5 nm. No micro-cracks were observed on film surface. The average remnant polarization and the coercive field were obtained from the hysteresis loop measurements. The ferroelectric behavior has been evidenced by the presence of the butterfly shape of the capacitance-voltage characteristics. Experimental results show that the dielectric constant of the PZT porous film is lower than that of the dense film.

Solid solutions of the Ba1-xSrxTiO3 (BST) type are very attractive for applications in information technology, but also in microwaves for such electrically controlled devices as phase shifters, tunable filters, steerable antennas, varactors, etc. A family of solid solutions with x = 25, 50, 75, 90% was prepared by standard powder technology-solid state reaction and sintered at 1230 degrees C and 1260 degrees C. Dielectric permittivity and loss at low (1 kHz) and high frequency (1 divided by 2 GHz) were measured on a large temperature range - 200 degrees C divided by + 200 degrees C. The influence of Sr content and of I wt.% MgO and I wt.% MnO2 doping on the complex dielectric constant was studied. The dielectric permittivity at high frequencies and room temperature considerably decreases with the increase of Sr content. Similarly, low frequency measurements showed a severe and almost linear decrease of the Curie Point with the increase of Sr fraction. At low Sr content, the measured ceramic densities slowly decrease with Sr fraction and represent about 92% of the X-ray density rho(g/cm(3)) approximate to 5.99-0.99x. At x=90% Sr concentration, very low-density ceramics were obtained with both sintering temperatures. (c) 2005 Elsevier B.V All rights reserved.

Band-pass filters with dielectric resonators of (Zr-0.8, Sn-0.2)TiO4 ceramic materials (ZST) were developed for X-band applications. The ZST materials exhibit a dielectric constant of about 36.8 and low loss in microwave range. A Qxf product higher than 50,000 was achieved for the ZST samples with 0.2 % wt NiO sintering addition. The external coupling was performed using microstrip lines on a substrate of 9.22 dielectric constant and 0.635 mill height. Filters with a minimum insertion loss between 0.46 dB and 1.74 dB, the bandwidth between 40 MHz and 170 MHz and with the central frequency around 10 GHz were manufactured.

Epitaxial Pb(Zr,Ti)O-3 (PZT) thin films with thicknesses in the range of 50-200 nin and with 0.2 Zr/(Zr + Ti) ratio, were grown by pulsed laser deposition (PLD). The substrates used for PLD deposition are single crystalline 0.5% Nb-doped (1 0 0)SrTiO3 (STON). SrRuO3 (SRO) thin films were deposited as bottom and top electrodes in order to have minimum structural misfit, to insure on one side high quality growth, and on the other side to minimize the influence of the ext,ended structural defects. Structural and electrical characterization was performed. The epitaxial PZT films are c-axis oriented and have an average roughness of 0.4 nm. The ferroelectric behavior was proved in all investigated films by the presence of the hysteresis loops and by the butterfly shape of the capacitance-voltage (C-V) characteristics. The ferroelectricity was present even in the samples with relative high leakage currents, down to a thickness of 50 nm. These results are essential when small thickness is needed for miniaturization of ferroelectric devices using PZT. (c) 2005 Elsevier B.V. All rights reserved.

La2/3Ca1/3MnO3 (LCMO) nanowires were prepared using a sol-gel process and an anodically oxidized aluminum template. Scanning electron microscopy (SEM) shows that the nanowires are almost parallel and their diameter is around 40 nm. The temperature dependence of the electron spin resonance (ESR) linewidth is similar to that observed for the case of nanostructured LCMO. From this dependence, the determined magnetic transition temperature, T-C, of the LCMO nanowires, is of the order of 120-130 K.