National Institute Of Materials Physics - Romania

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873 articles found

751. Doped versus pure TGS crystals

Authors: Berbecaru, C; Alexandru, HV; Pintilie, L; Dutu, A; Logofatu, B; Radulescu, RC

Published: APR 25 2005, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 118, 146, DOI: 10.1016/j.mseb.2004.12.069

Pure and L- or D-alanime doped triglycine sulphate crystals (TGS) where grown in paraelectric phase around 52 degrees C. Doped crystals show lower and reproducible permittivities (crossing down the Curie point) and much lower losses versus pure crystals. Higher figures of merit have to be expected for highly doped crystals, suitable for IR detection. A remarkable difference of the experimental curves was noticed in the temperature dependence of the pyroelectric coefficients (p = dP(S)/dT) for L- and D-alanine doped samples. This fact suggests a non-equivalent L/D-alanine dopant substitution of the glycine group GI in the host lattice. Spontaneous polarization was calculated by integration of pyroelectric current data, and separately from the hysteresis loops recorded on a large temperature range, using Sawyer-Tower (phase compensated) circuit. Polarization values estimated from the two method compare reasonable well, except the temperature range in the proximity of the Curie point. lnternal bias field of similar to 1 kV/cm, induced by L-alanine dopant, stabilizes the polarization components P+ and P- opposite directions, with a peculiar dependence on the ac electric field. (c) 2005 Elsevier B.V. All rights reserved.

752. Radiation-hard semiconductor detectors for SuperLHC

Authors: Bruzzi, M; Adey, J; Al-Ajili, A; Alexandrov, P; Alfieri, G; Allport, PP; Andreazza, A; Artuso, M; Assouak, S; Avset, BS; Barabash, L; Baranova, E; Barcz, A; Basile, A; Bates, R; Belova, N; Biagi, SF; Bilei, GM; Bisello, D; Blue, A; Blumenau, B; Boisvert, V; Bolla, G; Bondarenko, G; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, TJV; Brodbeck, TJ; Broz, J; Brukhanov, A; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Chilingarov, A; Chren, D; Cindro, V; Citterio, M; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Cvetkov, V; Dalla Betta, GF; Davies, G; Dawson, I; de Boer, W; De Palma, M; Demina, R; Dervan, P; Dierlamm, A; Dittongo, S; Dobrzanski, L; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Franchenko, S; Fretwurst, E; Gamaz, F; Garcia, C; Garcia-Navarro, JE; Gaubas, E; Genest, MH; Gill, KA; Giolo, K; Glaser, M; Goessling, C; Golovine, V; Sevilla, SG; Gorelov, I; Goss, J; Gouldwell, A; Gregoire, G; Gregori, P; Grigoriev, E; Grigson, C; Grillo, A; Groza, A; Guskov, J; Haddad, L; Harkonen, J; Harding, R; Hauler, F; Hayama, S; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R; Horn, M; Houdayer, A; Hourahine, B; Hruban, A; Hughes, G; Ilyashenko, I; Irmscher, K; Ivanov, A; Jarasiunas, K; Jin, T; Jones, BK; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V; Kierstead, J; Klaiber-Lodewigs, J; Kleverman, M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Kowalik, A; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lari, T; Lassila-Perini, K; Lastovetsky, V; Latino, G; Latushkin, S; Lazanu, S; Lazanu, I; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindstrom, G; Lindstrom, L; Linhart, V; Litovchenko, A; Litovchenko, P; Litvinov, V; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Mainwood, A; Makarenko, LF; Mandic, I; Manfredotti, C; Garcia, SM; Marunko, S; Mathieson, K; Mozzanti, A; Melone, J; Menichelli, D; Meroni, C; Messineo, A; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Murin, L; Nava, F; Naoumov, D; Nossarzewska-Orlowska, E; Nummela, S; Nysten, J; Olivero, P; Oshea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piatkowski, B; Piemonte, C; Pignatel, GU; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, AI; Popule, J; Pospisil, S; Pucker, G; Radicci, V; Rafi, JM; Ragusa, F; Rahman, M; Rando, R; Roeder, R; Rohe, T; Ronchin, S; Rott, C; Roy, P; Roy, A; Ruzin, A; Ryazanov, A; Sadrozinski, HFW; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P; Sentenac, D; Shipsey, I; Sicho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Spencer, N; Stahl, J; Stavitski, I; Stolze, D; Stone, R; Storasta, J; Strokan, N; Strupinski, W; Sudzius, M; Surma, B; Suuronen, J; Suvorov, A; Svensson, BG; Tipton, P; Tomasek, M; Troncon, C; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullan, M; Vaitkus, JV; Vanni, P; Velthuis, J; Verzellesi, G; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Zablerowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

Published: APR 1 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 541, 201, DOI: 10.1016/j.nima.2005.01.056

An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016cm-2. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work. 2005 Published by Elsevier B.V.

753. Soft ferrite materials for magnetic temperature transducers and applications

Authors: Miclea, C; Tanasoiu, C; Miclea, CF; Gheorghiu, A; Tanasoiu, V

Published: APR 2005, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 290, 1509, DOI: 10.1016/j.jmmm.2004.11.561

Soft ferrites in the CuZnTi system, having the formula Cu1-xZnxTiyFe2-4O4, with 0.50 <= x <= 0.60 and 0.00 <= y <= 0.05 were investigated as a function of composition, sintering temperature and cooling speed, in order to obtain materials with controlled T-C and very high change rate of permeability with temperature around their T-C. The effect of Zn and Ti additions was a drastic change of the Curie temperature with about 10-12 degrees C for each atomic percent of Zn and Ti introduced into the spinel lattice while the cooling speed changed the behaviour of magnetic permeability with temperature around the Curie point. An application using such magnetic temperature sensors for a thermostat is presented. (c) 2004 Elsevier B.V. All rights reserved.

754. Effect of iron and nickel substitution on the piezoelectric properties of PZT type ceramics

Authors: Miclea, C; Tanasoiu, C; Miclea, CF; Amarande, L; Gheorghiu, A; Sima, FN

Published: 2005, JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 25, 2400, DOI: 10.1016/j.jeurceramsoc.2005.03.069

The effect of Fe and Ni doping on piezoelectric properties of a soft type piezoelectric material was investigated. The materials composition was as follows: Pb0.95Bi0.03Nb0.02Zr0.51Ti0.49-xMxO3, where M stands for the transitional metals Fe or Ni and x = 0, 0.02, 0.04, 0.06, 0.08 and 0.10. The materials were prepared by the conventional ceramic technique. X-ray diffractograms showed that compounds were completely formed and they were situated in the nanometric range with an average crystallite size of about 95 urn. The optimum amounts of doping for both types of transitional elements were situated somewhere around x = 0.06 with better results for nickel doped samples. The maximum density for 0.06 nickel doped material was 7.87 and 7.80 g/cm(3) for iron doped one. The electromechanical coupling factor k(p) for 0.06 nickel doped samples was 0.665 while for the correspondingly iron doped ones it was 0.638. The relative dielectric constant was about 4050 for nickel doped samples and 3400 for iron doped ones. The corresponding values for the charge constant d(33) were 625 and 530 pm/V, respectively. These results were discussed in terms of the positions occupied by Ni and Fe into the lattice, the type of vacancies created by this and the shift of the morphotropic phase boundary. (c) 2005 Published by Elsevier Ltd.

755. Effect of hydrogenation on defect reactions in silicon particle detectors

Authors: Makarenko, LF; Korshunov, FP; Lastovski, SB; Kazuchits, NM; Rusetsky, MS; Fretwurst, E; Lindstrom, G; Moll, M; Pintilie, I; Zamiatin, NI

Published: 2005, GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 108-109, 222, DOI: 10.4028/www.scientific.net/SSP.108-109.217

The influence of preliminary treatment in hydrogen plasma on elimination of radiation defects and formation of thermal donors has been studied in detector structures made of standard and oxygenated float zone silicon has been studied. A new type of thermal donors has been found in as-treated diodes. These thermal donors are unstable and can be eliminated by heat-treatment at 200-250 degrees C. After irradiation with 3.5 MeV electrons the detectors had been annealed at temperatures of 50-350 degrees C. It has been found that preliminary hydrogenation at 300 degrees C leads to disappearance of main vacancy-type radiation defects at lower annealing temperatures, The annealing of hydrogenated and irradiated crystals is accompanied by hydrogen redistribution and formation of hydrogen-related donors. Preliminary irradiation influences on both these processes.

756. Piezoelectric properties of bismuth modified lead titanate ceramics

Authors: Miclea, C; Amarande, L; Tanasoiu, C; Spanulescu, I; Miclea, CF

Published: 2005, CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE, 1-2, 274, DOI:

Effect of Bi additives on the piezoelectric properties of PT ceramics having the formula (Pb1-3x/2Bix(Ti0.98Mn0.02)O3, with x = 0,04, 0.06, 0.08 was investigated. The samples were prepared by conventional ceramic technique, using p.a. purity raw materials. The Mixed powders were sintered at temperatures between 1050-1300 degrees C. Poling was done in fields of about 70 kV/cm. Density and coupling factors of the samples were determined as a function of sintering temperatures, and doping level. Temperature dependence of the main piezoelectric characteristics was also investigated for temperatures as high as 500 degrees C. A Curie point of 450 degrees C, a low dielectric constant (< 140) and a large electromechanical anisotropy), (the radial mode is nearly inexistent, at room temperature and the thickness coupling factor is about 0.4) were found. These enhanced properties make such ceramics very attractive for high temperature and high frequency transducers applications.

757. Ba1-xSrxTiO3 ceramics for tunable microwave devices

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Ghetu, D; Dutu, AC; Vasiliu, F; Alexandru, HV; Berbecaru, C; Stoica, G; Nita, P

Published: 2005, CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE, 1-2, 280, DOI:

The paper describes the investigations of Ba1-xSrxTiO3 ceramic materials prepared by solid-state reaction techniques. The addition of MgO and MnO2 improves sintering process and decreases the dielectric loss. The materials exhibit a dielectric constant epsilon(r) similar to 1000 and low loss tan delta similar to 10(-3) at microwave frequencies.

758. High-K ZST material for microwave and millimeter wave applications

Authors: Ioachim, A; Ramer, R; Toacsan, MI; Banciu, MG; Nedelcu, L; Ghetu, D; Stoica, G; Annino, G; Cassetari, M; Martinelli, M

Published: 2005, Smart Materials III, 5648, 376, DOI: 10.1117/12.582428

Wireless communications systems require new materials with special properties in specific frequency bands. The investigations on ZST type ceramics, (Zr0.8Sn0.2)TiO4, presented in this paper, recommend this materials for applications in microwaves and millimeter waves. The ZST materials were prepared using a standard solid-state reaction technology. The samples morphology, phase-composition and microstructure investigations were performed by using the scanning electron microscopy (SEM), and energy-disperse X-ray spectrometry (EDX). The crystalline phases were identified by X-ray diffractometry (XRD). The electromagnetic properties were investigated on ZST resonators by using a Computer Aided Measurement (CAM) in microwaves, combining a HP 8757C network analyzer and a HP 8350B sweep oscillator. The dielectric characteristics at millimeter waves were analyzed by investigation of the Whispering Gallery Modes on ZST disks. The low level NiO doping provides ZST materials with temperature coefficient tau(f) in the range (-2 divided by +4) ppm/degrees C and decreases the dielectric loss. Materials with high values of the Q f product up to 50,000 and a dielectric constant about 36 at microwave frequencies were obtained. ZST dielectric resonators and substrates for hybrid integrated circuits with dimensions 1" x 1" and thickness in the range 0.6 divided by 1 mm were manufactured.

759. Lead-based ferroelectric compounds: Insulators or semiconductors?

Authors: Pintilie, L; Lisca, M; Alexe, M

Published: 2005, INTEGRATED FERROELECTRICS, 73, 48, DOI: 10.1080/10584580500413434

Lead zirconate-titanate (PZT) epitaxial thin films are considered wide-gap p-type semiconductors with standard Schottky contacts. Capacitance-voltage, current-voltage, as well as the dielectric hysteresis are analyzed using a model based on the conventional metal-semiconductor Schottky contact in which the effect of the ferroelectric polarization on band-bending was considered. In addition, presence of the deep traps and its effect on the measured quantities were considered and discussed. For a single-crystal like PZT films with a remnant polarization of 40 mu C/cm(2) the free carrier concentration is estimated to about 3 x 10(18) cm(-3), whereas the effective density of the fixed charges in the depletion region is of about 1.8 x 10(19) cm(-3) .

760. Effect of lead titanate-zirconate additions into barium titanate ceramics on the dielectric and piezoelectric properties of mixed compounds

Authors: Miclea, C; Tanasoiu, C; Amarande, L; Miclea, CF

Published: 2005, FERROELECTRICS, 319, 63, DOI: 10.1080/00150190590965415

Powders of barium titanate (BT) and lead zirconate-titanate (PZT) were mixed together to form solid solutions in the ceramic system (1 - x)BT (.) xPZT, where 0 <= x <= 1. The mixed compounds were synthesized by sintering pressed samples of the mixed powders at high temperatures between 1100-1400 degrees C, for 3 hours. Dielectric and piezoelectric properties of the sintered samples were investigated at room temperature. X-ray diffractograms showed that monophase ceramics with perovskite structure were formed along the whole compositional range. The dielectric permittivity epsilon(r) increased with increasing amount of PZT, reaching a maximum value of about 6900 for composition with x = 0.6, and then suddenly decreases up to lower values of less than 2000. The piezoelectric properties (electromechanical coupling coefficient k(p), voltage and charge constants g and d respectively) behave as follows: at first there is a slight decrease of their values for all compositions with x <= 0.6 and then suddenly, and rather constantly, their values increase by more than 100 % for compositions with x >= 0.6. Such a behavior could possible be explained in terms of the structural changes brought about by the incorporation of PZT phase into BT one. The mechanical mixture of BT and PZT particles of similar dimensions gives rise to both new compositions as well as to distinct particles of BT or PZT of different dimensions under the influence of temperature, whose properties may differ from the initial ones so that their properties can be either the result of a size effect or the compositional one, but most probably the combination of both.