National Institute Of Materials Physics - Romania

Nonmonotonic current transients at constant temperature, following a pulsed charge injection, have been observed in silicon diodes heavily irradiated with gamma rays. The features of the transients have been studied at different temperatures and using various reverse biases. The particular shape of the measured transients is interpreted, with the help of numeric simulations, in terms of a strong time dependency of the space charge density due to the discharge of radiation induced deep traps. In particular, a nonmonotonic transient is generated if the discharge of a dominant trap determines the change of the space charge sign (type inversion). In this case the active volume of the sample, from which the current is collected, is increased during the discharge and causes the sample to become fully depleted for a short time. During this time interval the active volume reaches its maximum value and a peak is produced in the transient shape. The measurement of this peak provides a sensitive way to detect type inversion in semiconductor devices and to determine the responsible energy levels. The correlation of nonmonotonic transients with thermally stimulated current spectra and the distortion produced in deep level transient spectroscopy spectra are discussed in detail.

Pyroelectric current spectroscopy (PCS) was used to investigate the homogeneity of the Nb doped lead zirconate-titanate Pb(Zr-0.92 Ti-0.08)O-3, (PZT) ceramics intended to be used in the infrared (IR) pyroelectric detectors manufacturing. The non-homogeneous composition in the ceramic volume is reflected by the occurrence of several peaks in the PCS spectra, suggesting the presence of PZT phases with different Zr/Ti ratio, thus having different transition temperatures. The non-homogeneity was confirmed by compositional analysis performed using an Energy Dispersive X-ray Spectrometer (EDAX) attached to a Scanning Electron Microscope (SEM). PCS can be a useful tool in optimizing the calcination and sintering parameters (temperature and time) during ceramic preparation. (C) 2004 Elsevier B.V. All rights reserved.

In this work, it is shown that the analysis of thermally stimulated currents (TSC) and current transients (CT) at constant temperature can be a suitable tool to study the influence of deep levels on space charge density N(T) in irradiated silicon diodes. In particular, the occurrence of space charge sign inversion (SCSI) can be related to signal discontinuities in TSC and CT measurements. This approach has been adopted in this work to study devices made of standard Float Zone (FZ) and Diffusion Oxygenated Float Zone silicon, irradiated by gamma-rays up to a dose of 300 Mrad. Our study shows that all the samples are inverted at 50 K after a low-temperature excitation. Several space charge sign inversions, from positive to negative and vice versa, have been observed between cryogenic and room temperature, and have been related to carriers emission from dominating deep traps. Only standard FZ silicon remains inverted at room temperature after a dose of 300 Mrad. (C) 2004 Elsevier B.V. All rights reserved.

New magnetic composite materials, ribbon samples, with nominal compositions FexCu1-x (x=0.2; 0.5; 0.8) were obtained by the melt spinning technique. Various information was provided via X-ray diffraction, Mossbauer and magnetic measurements. The structural aspects: phase composition, size and texture effects, have been corroborated with magnetic properties. Finally, the possibility to choose the adequate composition and the suitable processing in order to obtain desired anisotropic magnetic materials were presented.

Triglycine sulfate crystals (TGS) doped With L- and D-alanine, respectively, where grown in paraelectric phase at 52 degreesC. They show stable parameters versus pure TGS crystals, lower permittivities and losses, i.e. higher pyroelectric figure of merit. L- and D-alanine-doped crystals show a mirror asymmetry of the growth habit along the ferroelectric axis. Hysteresis loop of pure and doped samples were automatically recorded. Internal bias field of about I kV/cm, induced by the two dopants, stabilizes the polarization components P+ and P- in opposite directions. Spontaneous polarization of doped crystals shows two unequal P+/P- components, having a peculiar dependence on the ac applied electric field. Dopage simulation of pure TGS samples, using several bias fields, shows even more complicated pattern. Pyroelectric coefficients were evaluated from pyroelectric current measurements. A remarkable asymmetry of the pyroelectric coefficient peak values for the enantiomorphous-doped crystals was noticed, crossing up and down the Curie point. This fact suggests a non-equivalent L/D-alanine dopant substitution of the glycine group GI in the host lattice. It has been shown that the pyroelectric coefficient can be increased at room temperature, under an optimized dc electric field applied on the pyroelectric wafer. Doped crystals are suitable for IR detector and for more stable gas sensors applications in pollution monitoring. (C) 2004 Elsevier B.V. All rights reserved.

Lead zirconate-titanate (PZT) thin films with Zr/Ti ratio of 92/8 were deposited by sol-gel on Pt coated silicon and single crystal MgO(100) substrates. In case of the films deposited on Pt the perovskite structure is established only after oxygen annealing, while for the films deposited on MgO annealing in air is enough. The films are polycrystalline with preferred orientation that is substrate dependent ((110) on Pt and (100)/(200) on MgO). Average values of 2.10 muC/cm(2) and 78 kV/cm were obtained for remnant polarization and coercive field, respectively. The I-V characteristic at low-to-intermediate electric fields is controlled by thermionic emission, but the Schottky representation is Ln(current)-(voltage)(1/4), implying that the film behaves like a semiconductor and not like an insulator. From transmission-reflectance measurements a value of 3.85 +/- 0.05 eV was estimated for the band gap, while the refraction index in the transparency region was found to be 2.6. A pyroelectric signal was detected on as grown films, making them attractive for infrared detection. (C) 2003 Elsevier B.V. All rights reserved.

Investigations on barium neodymium titanate (BNT) prepared by solid state reaction techniques are presented in this paper. The samples were sintered at temperatures, T-s, in a range 1200-1300degreesC. High density values and adequate microwave parameters were obtained by adding 0.5 mol PbO substitutional for BaO. A decrease of the Curie temperature with the increase of the Nd2O3 concentration was confirmed. For the sample with 28 wt.% Nd2O3, 0.5 mol PbO pyroelectric data indicate Curie temperature around 75 K, therefore, at room temperatures, the materials are in paraelectric phase. BNT ceramics with high Nd2O3 concentration (28 wt.%), sintered at 1250degreesC for 2 h appear to be suitable for dielectric resonators for frequencies up to 3 GHz (epsilon(r)=80-90 and Q = 2000). (C) 2003 Elsevier B.V. All rights reserved.

Pb(Zr, Ti)O-3 (PZT) thin films with Zr/Ti ratio of 92/8 and doped with up to 4 at.% Nb were deposited by sol-gel on Pt coated Si substrates. The scope was to investigate the influence of Nb additive on the structural, optical and electrical properties of Zr-rich PZT phase. it was found that a residual pyrochlore phase stabilizes with increasing the Nb content. The remnant polarization, the coercive field, and the dielectric losses increase with increasing Nb content. The presence of the pyroelectric effect was also evidenced on as-deposited layers. The films have potential for light detection in the infrared region of the electromagnetic spectrum (pyroelectric effect). (C) 2003 Elsevier B.V. All rights reserved.

In this paper, electrical investigations performed on complex metal-oxide-semiconductor (MOS) structures with amorphous LaAlO3 deposited as gate oxide on a rapid thermal processed SiO2 buffer layer are presented. Current-voltage (I-V) measurements at different temperatures and high frequency room-temperature capacitance-voltage (C-V measurements indicate the presence of a non-equilibrium state in p-type Si (100) substrate under reverse polarization of the structure. The asymmetry in I-V characteristics is opposite to the expected one for the high-kappa/interfacial layer stack behavior. Different indications for the non-equilibrium MOS state are inferred from the experimental data, and the extraction of MOS physical parameters by using the classical C-V method is shown to be unreliable. For small and large applied forward voltages defect-related charge transport and tunneling currents dominate, respectively. (C) 2003 Elsevier B.V. All rights reserved.

Cadmium sulphide (CdS) thin films were deposited by chemical bath deposition (CBD) method on SiC2/Si (n-type) substrates. Approximately, 70 nm thick nano-crystalline CdS layers were obtained. Thin film field effect transistors were realised by deposition of two coplanar electrodes of Au (drain and source) on the US surface. The gate contact is aluminium deposited on the backside of the Si substrate. The drain current-drain voltage characteristics (I-d - V-d) were performed in dark. Normal field effect transistor characteristics are obtained in case of positive gate and drain voltages, the device acting as an n-channel transistor in the accumulation mode. For negative drain voltages the characteristic is dominated by space charge limited currents (SCLC). An on/off current ratio of about 10(2) is reported, this being limited in our case by geometry. (C) 2003 Elsevier B.V. All rights reserved.