National Institute Of Materials Physics - Romania

A survey of the main NDT methods used to evaluate the quality and properties of wood and wooden structures is given. Among the most important ones there arc visual inspection, sonic and ultrasonic stress wave. Some other methods include: deflection, electrical, isotope and Xray methods. The ultrasonic methods seem to be the most suitable ones in many cases especially for quality control purposes, but these methods depend on the quality of the piezoelectric transducers. Consequently, the construction and characteristics of a new type of piezoelectric transducer are reported. The new transducer is a composite type transducer, consisting of a sandwich type piezoactive element and a steel cylinder glued together. The sandwich piezoactive element was made of five thinner discs of 20 mm diameter and 2 mm thickness. The whole construction has the resonant frequency at 60 kHz, proper to wood investigation. The transducer can be successfully used for NDT of wood, either in the trough transmission or pulse-echo arrangements. The transducers were tested for sound velocity measurements in different wood samples.

An iterative method is presented for the characterization of lossy piezoelectric materials in the radial resonant mode, which provides a new formula to calculate the frequencies at which the electrical admittance is to be measured. This new method considerably reduces the measurement time by separating the programs for data acquisition and for calculus. The accuracies of the material constants for several soft and hard piezoceramic materials, covering a wide range of values of the planar coupling factor and mechanical quality factor, were tested and it was evidenced that they depended on the type of the piezoelectric material. The new method proved to be as accurate as, or in some cases even more accurate than, the other iterative methods. This new method can also be applied whenever the standard method does not allow the determination of the material constants. (C) 2002 Elsevier Science Ltd. All rights reserved.

Effect of 1-4 wt.% excess PbO, added to the calcined powder, on the structure and dielectric and piezoelectric properties of Bi-doped lead titanate ceramics was investigated. The ceramics containing 4, 6 and 8 mol% Bi were prepared by the usual ceramic technique, using high purity oxides. The calcined powder of each composition was next intimately mixed with 1, 2, 3 and 4 wt.% PbO and then sintered at 1200-1300 degreesC for 3 h. The dielectric piezoelectric and electromechanical properties were determined as a function of excess PbO. Addition of PbO up to 2 wt.% was found to improve the densification, by the presence of the PbO liquid phase during sintering. For all Bi doping levels, the dielectric constant and the thickness coupling factor reach maxima (representing an increase of 2.5-8% for dielectric constant and 7-8% for thickness coupling factor) at about 2 wt.% PbO addition. The planar coupling factor is very low, less than 0.01, regardless the PbO content. The disipation factor slightly decreases with increasing PbO content and the mechanical quality factor of the thickness mode was about 300. The experimental results were discussed in terms of the mechanisms of densification in the presence of the liquid phase and of lead vacancy concentration. (C) 2002 Elsevier Science Ltd. All rights reserved.

The deep level transient spectroscopy method was applied on standard and oxygenated float-zone silicon detectors exposed to high doses of Co-60-gamma irradiation. We have detected and characterized a close to midgap trapping level having an ionization energy of E-C-(0.545+/-0.005) eV and electron/hole capture cross sections of sigma(n)=(1.7+/-0.2)x10(-15) cm(2)/sigma(p)=(9+/-1)x10(-14) cm(2) respectively. This level has a strong impact on the detector performance being responsible for more than 90% of the change in the effective doping concentration. The defect is strongly oxygen related and a possible connection with the V2O complex is discussed. (C) 2002 American Institute of Physics.

Lead sulfide (PbS) thin films were deposited from a chemical bath onto SiO2/Si (n-type) substrates. Pseudo-metal-oxide-semiconductor devices were obtained by evaporating source and drain gold electrodes on a PbS surface and aluminum gate electrode on a Si substrate. Field-effect-assisted photoconductivity in the PbS layer was investigated at room temperature, in the 800-2700-nm-wavelength domain for different values and polarities of the drain and gate voltages. The best results were obtained for a positive gate, when both semiconductors are in depletion. An enhancement of about 25% of the photoconductive signal is obtained compared with the case when the gate electrode is absent or is not used. A simple model is proposed that explains the behavior of the dark current and photoconductive signal in PbS film with changing the gate voltage. (C) 2002 American Institute of Physics.

Advanced electroceramics have played a critical role in the development of new and modem technologies such as computers, telecomunications and aerospace and they will continue to play the leading role in the technology of the future. The present report presents and discusses a number of advanced electroceramic materials with special references to their specific properties that make them indispensable in a large area of applications. The materials discussed include cobalt-mangan oxides used as negative temperature coefficient thermistors, semiconducting doped barium titanate used for positive temperature coefficient thermistors with large applications in thermal protections and piezoelectric electroceramics of PZT type, which find new application as ceramic transducers and sensors in biomedical and aerospace industries or as simply buzzers, filters, igniters, ultrasonic cleaners, towed array sonars, medical imaging system, ink-jet printing heads, camera shuttlers, positioners for optical systems, micromotors and actuators. Such advanced electroceramic materials are extremely useful for the future sophisticated technologies such as heads for magnetic recording, scanning tunneling microscope, sensors for antilock braking systems, ultrasonic bone-healing devices and some other biomedical applications.

A barium titanate precursor with a barium:titanium ratio of 1:4 was prepared by controlled coprecipitation of mixed barium and titanium species with an ammonium oxalate aqueous solution at pH 7. The results of thermal analysis and IR measurement show that the obtained precursor is a mixture of BaC2O4.0.5H(2)O and TiO(OH)(2).1.5H(2)O in a molar ratio of 1:4. Crystallized BaTi4O9 was obtained by the thermal decomposition of a precipitate precursor at 1300degreesC for 2 h in air. The dimensions of the powder calcined at 1000degreesC are between 100 and 300 nm. The grain dimensions of the sintered sample for 2 h at 1300degreesC are of the order of 10 to 30 mum. Dielectric properties of disk-shaped sintered specimens in the microwave frequency region were measured using the TE011 mode. Excellent microwave characteristics for BaTi4O9-epsilon = 38 +/- 0.5, Q = 3800-4000 at 6-7 GHz and tau(f) = 11 +/- 0.7 ppm/degreesC-were found.

We propose an improved method for the analysis of Thermally Stimulated Currents (TSC) measured on highly irradiated silicon diodes. The proposed TSC formula for the evaluation of a set of TSC spectra obtained with different reverse biases leads not only to the concentration of electron and hole traps visible in the spectra but also gives an estimation for the concentration of defects which not give rise to a peak in the 30-220 K TSC temperature range (very shallow or very deep levels). The method is applied to a diode irradiated with a neutron fluence of phi(n) = 1.82 x 10(13) n/cm(2). (C) 2002 Published by Elsevier Science B.V.

Pyroelectric properties of triglycine sulfate (TGS) thick films, separately doped with L and D alanine were investigated. Internal bias field of about 1 kV/cm, induced by the two dopants, stabilize the polarization in the opposite direction on the ferroelectric axis. Pyroelectric current (under constant stress) was recorded with a computer controlled Keithley 6517 electrometer, crossing up and down the Curie point. A reverse external electric field was applied on doped materials during heating, crossing up the Curie point. It is shown that the pyroelectric coefficient can be increased about four times at room temperature under un optimized DC electric field applied on the pyroelectric wafer.

Nitrogen doped 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition were investigated by deep level transient spectroscopy in the as-grown state. Besides the Z(1,2) defect level at E-C - 0.66 eV, that seems to be omnipresent, four other electron traps labeled IL1 to IL4 With ionization energies between 0.87 and 1.31 eV could be detected. The dependence of the deep level concentrations on the incorporated N concentration ranging from few 10(14) to Some 10(15) cm(-3) and the C/Si ratio (1.2divided by3) was examined. The concentration of both Z(1,2) and IL1 increases with increasing N doping. For medium C/Si ratios this dependence is linear for Z(1,2) and quadratic for IL1. High C/Si ratios enhance the formation of Z(1,2) while they suppress that of IL1. These results suggest a complex of interstitial C and N on carbon site (C-i-N-C) for Z(1,2) and a nitrogen pair (N-C-N-i) for IL1. However, other possibilities like Si vacancy related defects cannot be ruled out at present.