National Institute Of Materials Physics - Romania

Cu2ZnSnS4 (CZTS) is an emerging material with significant potential as an absorber layer for solar cells. Precise control over the film preparation process is crucial for attaining optimal transport, electrical, and optical properties. This study investigates the effect of sulfurization duration on the properties of CZTS films deposited onto soda lime glass substrates via spray pyrolysis, followed by annealing at 550 degrees C in a sulfur-rich environment under argon flow. X-ray diffraction and Raman spectroscopy confirmed the formation of monophasic CZTS, with the highest phase purity observed for films sulfurized for 5 min. Scanning electron microscopy demonstrated notable morphological and microstructural enhancements due to the sulfurization process, while energydispersive spectroscopy confirmed near-ideal stoichiometric composition (Cu:Zn:Sn:S approximate to 2:1:1:4). Optical spectroscopy determined the band gap of the films to be between 1.40 and 1.50 eV. The electrical transport properties were investigated up to 130 degrees C, revealing p-type conductivity, with Seebeck coefficients ranging from 30 to 70 mu V K-2 and low electrical resistivity, displaying semiconductor-like behavior. The maximum power factor achieved was 0.36 mu W mK-2 at 130 degrees C for the sample sulfurized for 5 min. These findings suggest that a 5-min sulfurization time is optimal for producing single-phase CZTS films characterized by uniform morphology, accurate stoichiometric composition, and an ideal direct band gap. Given its favorable thermoelectric properties, CZTS shows significant promise as a material for thermoelectric applications, particularly in waste heat recovery systems. The results indicate that CZTS films could be further optimized for use in thermoelectric devices, and future studies could focus on enhancing their thermoelectric performance by adjusting sulfurization conditions and exploring material modifications.

Some alloys exhibit not only shape memory but also thermal memory, retaining information about the highest temperature reached during heating. This phenomenon occurs when the alloy starts in the martensite phase and is then heated up to an "arrest temperature" that lies strictly within the martensite-austenite transformation range, without the transformation being completed. The "reading" of this memory is performed by cooling the alloy back into martensite and then reheating it to full austenite in a calorimeter, where the phase transition heat flow displays a dip near the arrest temperature. This unique behavior naturally qualifies such materials as temperature sensors, more precisely as maximum thermometers, which by definition indicate the maximum temperature reached during a given time interval. In this paper, we extend existing thermal memory studies to various polycrystalline shape memory alloys with Heusler structure, prepared by rapid solidification and based on NiFeGa (with Co, Al, Gd, Nd additions) and NiMnGa compositions. We analyze the possibility of shifting the transformation temperatures - and implicitly the thermal memory sensitivity range - through composition variations and thermal treatments. The thermal memory effect was consistently observed, and in fact quite readily, across all samples at various temperatures within the sensitivity interval. In contrast to classical maximum thermometers, these materials are capable of also memorizing multiple temperatures, as long as they are recorded in a strictly decreasing order. The use of sample groups and calibration aspects are discussed. Finally, we emphasize that shape memory alloys with these compositions and preparation methods show potential for recording temperatures across a wide range - from 0 degrees C to above 100 degrees C. A statistical geometry model, based on the redistribution of the martensite plates sizes, qualitatively reproduces the observed thermal memory features.

The precise control of the magnetic compensation temperature (theta c) in ferrimagnetic garnets is essential for the development of cutting-edge ultrafast customizable spintronic devices. In this work we demonstrate how fine variation in stoichiometry and cation distribution in iron gadolinium garnets significanty influences theta c. Two samples of Gd3Fe5O112 garnets synthesized via a new hydrothermal method and a conventional solid-state reaction, respectively, were considered. The complex study was carried out using a complex approach combining X-ray diffraction, magnetometry, and M & ouml;ssbauer spectroscopy. Atomic-scale analysis revealed with unprecedent accuracy a cationic inversion between Fe3+ ang Gd3+ at octahedral and dodecahedral sites in both samples, and their chemical compositions were determined as Gd2.70Fe4.76O11.9 and Gd2.96Fe4.68O11.5, respectively. These local rearrangements have been shown to have a consistent influence on theta c (290 K and 317 K, respectively) around room temperature, emphasizing the high sensitivity of exchange interactions to internal atomic order. Results clearly illustrate the strong correlation between the processing, atomic configuration and macroscopic magnetic behavior, establishing a new paradigm for the design of garnet-based materials with tunable theta c. The strategy for the accurate determination of cation inversion illustrated in this work exhibits great potential in guiding material innovations for next-generation spintronics.

In this study, thermal analysis (including differential thermal analysis and thermogravimetric analysis coupled with mass spectrometry) was used to design the sintering process of alumina as well as Al2O3-Mo and Al2O3-Ni green bodies obtained by digital light processing (DLP) 3D printing. The measurements were performed for selected organic additives, which are commonly used in the DLP technique, such as photoinitiators, dispersing agents, and organic monomers. Additionally, metallic powders (Ni, Mo), as well as ceramic and composite green bodies, have been subjected to thermal analysis. The obtained results allowed us to determine proper sintering conditions for a two-step sintering program. Firstly, the organic phase was burnt out at 400 degrees C in the air. At this temperature, metallic powders have not yet started to oxidize, and most of the organic additives have already been eliminated from the sample. The second step was performed using spark plasma sintering at 1150 degrees C with a pressure equaling 60 MPa in an argon atmosphere to prevent the oxidation of metals. The samples were gradually cooled down to 800 degrees C at a cooling rate of 35 degrees C min-1 and then furnace-cooled to room temperature, preventing the formation of intrinsic defects (microcracks) in a multicomponent ceramic-metal composite. The XRD and SEM-EDS analysis allowed us to conclude that the obtained composites are well densified, no other phases apart from alumina and metals are present in the samples, and that the alumina grain growth is smaller than for conventional sintering. An increase in fracture toughness for the composite samples was observed compared to pure alumina.

Mg2Si1-xSnx solid solutions are promising thermoelectric materials due to the inexpensive and abundant nature of their components, their environmental friendliness and their flexibility in terms of optimising their thermoelectric properties. In this study, we report on the thermoelectric properties enhancement of n-type Mg2Si0.3Sn0.7 solid solutions doped with aliovalent elements, donor (Bi) and acceptor (Ag), respectively. Samples were synthesized via conventional melting followed by spark plasma sintering. Co-doping led to carrier concentration and mobility tuning, resulting in a significantly increased Seebeck coefficient while maintaining high electrical conductivity. Consequently, the power factor reached 44.67 x 10(-3) Wm(-)(1) K-2 at 650 K for Mg1.98Ag0.02Si0.29Sn0.69Bi0.02. Furthermore, lattice thermal conductivity was reduced via enhanced phonon scattering caused by point defects and suppressed bipolar conductivity attributed to a widened band gap and increased carrier density. The combined effects yielded improved ZT values, peaking at 1.12 at 674 K and 1.13 at 721 K for Mg1.99Ag0.01Si0.29Sn0.69Bi0.02 and Mg1.98Ag0.02Si0.29Sn0.69Bi0.02, respectively. These results highlight the potential of Ag-Bi co-doping as a robust strategy to enhance the thermoelectric efficiency of Mg2Si1-xSnx based materials.

Bulk MgB2 disks (20 mm in diameter and 3.8 mm in thickness) added with 0, 1.5, 3.0, 4.5, 6.0, and 9.0 wt% silver are obtained by in situ spark plasma sintering. Samples are characterized by structural, microstructural, magnetic, and magnetic levitation zero-field-cooling and field-cooling measurements. Superconducting transitions are sharp with critical temperatures being in the range of 36.5-37.9 K. The vertical (F z,ZFC) and lateral (F x) levitation force show maximum values for samples added with 1.5 or 3 wt Ag%. At 20 K they are +17.78 N and 6.37 N, respectively. A maximum for zero field critical current density and pinning force is found for the sample added with 3 wt%. Roughly, as expected, levitation force correlates with zero-field critical current density, but other details influence this dependance. Results indicate that silver is an effective addition to MgB2 for enhancement of levitation performance.

Terahertz (THz) spintronic emitters represent a novel class of heterostructures composed of ferromagnetic (FM) and non-magnetic (NM) metallic layers that strongly emit terahertz (THz) radiation upon femtosecond laser pulse excitation. The optimal geometric configuration to maximize the strength of the emission is currently considered a trilayer structure, NM1/FM/NM2, where the FM layer is confined between two NM layers with opposite spin Hall angles. To investigate this, ultrathin Ta/Fe/Pt trilayers are fabricated and their THz emission profiles are analyzed. These results show that the highest THz emission is achieved for the sample of Ta (1.5 nm)/Fe (2 nm)/Pt (2 nm), demonstrating a significant enhancement compared to standard FM/NM bilayers. Furthermore, the thickness dependence of the THz emission is modeled in Ta (t1 nm)/Fe (2 nm)/Pt (t2 nm), varying t1 and t2 from 1 nm to 3 nm. From this analysis, spin diffusion lengths of lambda Pt = 1.2 nm and lambda Ta = 0.85 nm are extracted. The structure-property relationship is assessed via transmission electron microscopy, revealing that an epitaxial single-crystalline Ta layer covers the MgO surface with Ta adopting a high-resistivity fcc allotropic phase with a lattice parameter of a = 0.436 nm. This phase, together with the prerequisite for low Ta+Pt thickness, emerges as a key factor in achieving high THz emission from trilayer structures.

Although the DPPH (2,2-diphenyl-1-(2,4,6-trinitrophenyl)hydrazyl) radical is known for its indefinite stability, both in solid and in solution, and therefore no dimerization reaction occurs, the DPPH-dimer has been obtained by an alternative synthesis. Oxidation of the DPPH-dimer led to the corresponding DPPH-diradical, practically exhibiting all of the known properties of the simple DPPH radical. The structures were confirmed using 1H and 13C NMR, IR, UV-vis, HR-MS, and electron spin resonance (for the diradical) analyses. Additionally, cyclic voltammetry and superconducting quantum interference device (SQUID) measurements were performed to investigate the electrochemical and magnetic properties of the DPPH-diradical. DFT calculations revealed that the ground state was an open-shell singlet. The diradical character y of the ground state and vertical S-T gap were 0.279 and -5.81 kcal mol-1, respectively.

In this study we present the effect of the irradiation of sintered MgB2 with protons of intermediate energies, from 8.6 to 15.07 MeV, at a constant fluence of 2.86 x 10(16) p/cm(2). We found clear evidence that the disorder generated by irradiation leads to a weak suppression of the critical temperature T-c and an increase of the critical current density J(c) with increasing proton energy, as expected. However, it was found that thermomagnetic instabilities and vortex creep phenomena strongly depend on the ratio between proton range and the sample thickness. The number of the macroscopic flux jumps (MFJ) is highest and manifest up to 28 K in the sample with the proton range shorter than sample thickness (P-1) and decrease as the proton energy increases. Similarly, the relaxation rate of the irreversible magnetization is the lowest in the sample P-1 and increases with proton energy. We tentatively attribute this effect to the protons that stop within MgB2 and interact with the local structure/atomic composition.

Recent achievements in ultrafast spin physics have enabled the use of heterostructures composed of ferromagnetic (FM)/non-magnetic (NM) thin layers for terahertz (THz) generation. The mechanism of THz emission from FM/NM multilayers has been typically ascribed to the inverse spin Hall effect (ISHE). In this work, we probe the mechanism of the ISHE by inserting a second ferromagnetic layer in the form of an alloy between the FM/NM system. In particular, by utilizing the co-sputtering technique, we fabricate Fe/L1(0)-FePt/Pt ultra-thin heterostructures. We successfully grow the tetragonal phase of FePt (L1(0)-phase) as revealed by X-ray diffraction and reflection techniques. We show the strong magnetic coupling between Fe and L1(0)-FePt using magneto-optical and Superconducting Quantum Interference Device (SQUID) magnetometry. Subsequently, by utilizing THz time domain spectroscopy technique, we record the THz emission and thus we the reveal the efficiency of spin-to-charge conversion in Fe/L1(0)-FePt/Pt. We establish that Fe/L1(0)-FePt/Pt configuration is significantly superior to the Fe/Pt bilayer structure, regarding THz emission amplitude. The unique trilayer structure opens new perspectives in terms of material choices for the future spintronic THz sources.