National Institute Of Materials Physics - Romania

Polycrystalline La(0.8)K(0.2-x)Pb(x)MnO3 (x = 0.05, 0.10, 0.15, 0.20) ceramics were successfully prepared by flash combustion route and their structural, morphological, magnetic and magnetocaloric properties were investi-gated. Structural analyses using X-ray diffraction reveal that all samples are crystallized in the rhombohedral structure and belong to R <(3) over bar > c space group. The increase of Pb doping does not modify the crystalline structure but changes the grain size and lattice parameters. X-ray photoelectron spectroscopy (XPS) fitting results of Mn 2p peaks confirmed the coexistence of Mn3+ and Mn4+ ions which contribute to the double exchange interactions improving the ferromagnetic order in the samples. The magnetization's temperature and magnetic field de-pendences indicate a second-order ferromagnetic-paramagnetic transition of the ceramics. A significant mag-netic entropy change near room temperature was observed for La0.8K0.1Pb0.1MnO3, showing considerable magnetocaloric properties. Furthermore, electron paramagnetic resonance spectroscopy (EPR) was also used to examine the ferromagnetic-paramagnetic transition.

Cu2ZnSnS4 (CZTS) is regarded as one of the emerging materials for next-generation thin film solar cells. However, its synthesis is complex, and obtaining a single-phase CZTS thin film is difficult. This work reports the elaboration of Cu2ZnSnS4 thin films by a sequential magnetron sputtering deposition of Cu2SnS3 (CTS) and ZnS as stacked films. Initially, the CTS films were prepared on a soda lime glass substrate by annealing Cu and SnS2 stacked layers. Second, ZnS was deposited by magnetron sputtering on the CTS films. The CTS\ZnS stacks were then annealed in Sn + S or S atmospheres. The tetragonal CZTS structure was obtained and confirmed by grazing incidence X-ray diffraction and Raman spectroscopy. The morphological and compositional characteristics, measured by scanning electron microscopy and energy-dispersive spectroscopy, revealed large grains and dense surfaces with the elemental composition close to the intended stoichiometry. Additional X-ray photoemission spectroscopy measurements were performed to determine the surface chemistry and particularities of the obtained films. The optical properties, determined using conventional spectroscopy, showed optimal absorber layer band gap values ranging between 1.38 and 1.50 eV. The electrical measurements showed that all the films are p-type with high carrier concentrations in the range of 10(15) to 10(20) cm(-3). This new synthesis route for CZTS opens the way to obtain high-quality films by an industry-compatible method.

A recent theory of band ferromagnetism in 3d metals predicts 're-entrant' ferromagnetism at temperatures far above the boiling point of these metals in normal conditions (Teodorescu, C.M., 2021. Spin asymmetry originating from densities of states: Criterion for ferromagnetism, structures and magnetic properties of 3d metals from crystal field based DOSs. Results in Physics 25, 104,241). Metals, and in particular iron rich alloys, are still solid at such extremal temperatures in the Earth's inner solid core. It follows that this piece of the Earth may become ferromagnetic. This hypothesis is investigated in this work in more details, by using densities of states derived by ab initio density functional theory calculations for hexagonal close-packed iron and applying the basic theory of band ferromagnetism derived in the above Reference. The temperature for 're-entrant' ferromagnetism increases with the pressure, ranging between about 6530 and 6640 K for pressures between 330 and 360 GPa; these temperatures are in the range of most estimates for the temperature of the inner solid core of our planet. The dimension of the ferromagnetic "innermost inner core" (IMIC) derived from the estimated Fe magnetic moment are within the dimensions of a IMIC with different anisotropy in the propagation of seismic waves. For body centered cubic Fe no 're-entrant' ferromagnetism is predicted based on the actual model. It follows that the Earth's inner solid core with hexagonal close-packed structure is the main responsible for the geomagnetic field, and also most probably the reversal of this field proceeds by simple rotation of the magnetization of this core, while keeping a non-vanishing magnetic field during the reversal. This might prevent the Earth's surface bombardment with energetic charged particles during the reversals, with beneficial effects for complex lifeforms and for mankind civilization.

Photoelectron spectromicroscopy data cubes with sub-micrometer spatial resolution from a lead zirconate titanate thin film are fitted in each spatial point for several areas investigated, and correlations between the results of the fitting parameters are established, enabling one to suggest that surface band bending manifests also in the case of samples with multiple polarization states. These surface band bendings may be used for preliminary assessment of polarization states by using the contrast in binding energy. However, the individual curve fitting of each spectrum and the analysis of correlations between the derived parameters (binding energies and amplitudes) yields results of deeper significance in deriving the distribution of band bending. This allows in some cases discriminating between the origin of the individual components, assessing charging effects and compensation mechanisms, also enabling one to establish correlations between areas with different polarization. It is found that the major part of the investigated areas consist in regions with outwards polarization and without out-of-plane polarization, with the presence of some isolated metal Pb clusters. On a single area, components attributed to inwards polarization are detected, and their formation occurs at the expense of areas without out-of-plane polarization, mostly for a given proportion of the outwards polarization.

Iron-oxide-doped polyaniline (PANI-IO) thin films were obtained by the polymerization of aniline monomers and iron oxide solutions in direct current glow discharge plasma in the absence of a buffer gas for the first time. The PANI-IO thin films were deposited on optical polished Si wafers in order to study surface morphology and evaluate their in vitro biocompatibility. The characterization of the coatings was accomplished using scanning electron microscopy (SEM), Fourier-transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), metallographic microscopy (MM), and X-ray photoelectron spectroscopy (XPS). In vitro biocompatibility assessments were also conducted on the PANI-IO thin films. It was observed that a uniform distribution of iron oxide particles inside the PANI layers was obtained. The constituent elements of the coatings were uniformly distributed. The Fe-O bonds were associated with magnetite in the XPS studies. The surface morphology of the PANI-IO thin films was assessed by atomic force microscopy (AFM). The AFM topographies revealed that PANI-IO exhibited the morphology of a uniformly distributed and continuous layer. The viability of Caco-2 cells cultured on the Si substrate and PANI-IO coating was not significantly modified compared to control cells. Moreover, after 24 h of incubation, we observed no increase in LDH activity in media in comparison to the control. In addition, our results revealed that the NO levels for the Si substrate and PANI-IO coating were similar to those found in the control sample.

The electronic structure as well as the mechanism underlying the high-mobility two-dimensional electron gases (2DEGs) at complex oxide interfaces remain elusive. Herein, using soft X-ray angle-resolved photoemission spectroscopy (ARPES), we present the band dispersion of metallic states at buffered LaAlO3/SrTiO3 (LAO/STO) heterointerfaces where a single-unit-cell LaMnO3 (LMO) spacer not only enhances the electron mobility but also renders the electronic structure robust toward X-ray radiation. By tracing the evolution of band dispersion, orbital occupation, and electron-phonon interaction of the interfacial 2DEG, we find unambiguous evidence that the insertion of the LMO buffer strongly suppresses both the formation of oxygen vacancies as well as the electron-phonon interaction on the STO side. The latter effect makes the buffered sample different from any other STO-based interfaces and may explain the maximum mobility enhancement achieved at buffered oxide interfaces.

The effect of sodium thiosulfate (ST) on the photodegradation of azathioprine (AZA) was analyzed by UV-VIS spectroscopy, photoluminescence (PL), FTIR spectroscopy, Raman scattering, X-ray photoelectron (XPS) spectroscopy, thermogravimetry (TG) and mass spectrometry (MS). The PL studies highlighted that as the ST concentration increased from 25 wt.% to 75 wt.% in the AZA:ST mixture, the emission band of AZA gradual downshifted to 553, 542 and 530 nm. The photodegradation process of AZA:ST induced: (i) the emergence of a new band in the 320-400 nm range in the UV-VIS spectra of AZA and (ii) a change in the intensity ratio of the photoluminescence excitation (PLE) bands in the 280-335 and 335-430 nm spectral ranges. These changes suggest the emergence of new compounds during the photo-oxidation reaction of AZA with ST. The invoked photodegradation compounds were confirmed by studies of the Raman scattering, the FTIR spectroscopy and XPS spectroscopy through: (i) the downshift of the IR band of AZA from 1336 cm(-1) to 1331 cm(-1), attributed to N-C-N deformation in the purine ring; (ii) the change in the intensity ratio of the Raman lines peaking at 1305 cm(-1) and 1330 cm(-1) from 3.45 to 4.57, as the weight of ST in the AZA:ST mixture mass increased; and (iii) the emergence of a new band in the XPS O1s spectrum peaking at 531 eV, which was associated with the C=O bond. Through correlated studies of TG-MS, the main key fragments of ST-reacted AZA are reported.

The present work provides a new approach to the water denitration process and a facile strategy of catalyst preparation for the efficient hydrogen generation. The main focus of the research reported here was nitrate removal from aqueous solutions and simultaneous hydrogen generation under UV-Vis-light irradiation. This is a very important aspect in case of practical applications, eliminating the external source of hydrogen. Aiming to get a deeper understanding on the role of surface structures (size and shape of nanoparticles) towards the reduction mechanism and to establish basic principles for an efficient process, Pt-Cu/TiO2 and Pt-Cu/TiO2 modified with well-defined Pt nanoparticles were employed. The synthesized materials were characterized using various physicochemical techniques and tested comparatively for: (i) nitrate catalytic reduction by hydrogen (dark reaction) and (ii) nitrate photocatalytic reduction by in-situ generated solar hydrogen. In order to enhance overall denitration reaction by combined photocatalytic and catalytic processes, photo-generated charges and in-situ generated H-2 as reducing agent were used. Improvement of catalytic performances of nitrate hydrogenation reaction (~100% NO3 over line conversion) related to intimate contact between Pt and Cu was obtained. The in-situ generated H-2 by water splitting over the studied catalysts reduces efficiently NO3 over line ions. Enhanced photo-catalytic activity toward solar H-2 production by deposited well-defined Pt nanoparticles (~10 nm) was achieved. In order to make possible decontamination of polluted waters using in-situ generated H-2 under light exposure, the future optimization of such photo-catalytic systems looks promising.

Permanent localization of electrons inside a graphene quantum dot (GQD) is known to be forbidden, as a manifestation of Klein tunneling. However, an electron which scatters on a GQD may be transiently trapped inside and one known practice is the usage of magnetic field. These electronic states discussed here, called quasibound states, are scattering resonances typically characterized by a finite lifetime (trapping time). In this paper, we present a theoretical perspective concerning the opportunity to enhance the lifetime of quasibound states excited in a GQD placed in a uniform magnetic field, using circularly polarized light. Generally speaking, electron trapping inside GQDs is achievable for certain well-defined conditions, for instance, magnetic field intensity. We report here that the trapping time of an electron inside a GQD may be successfully enhanced by adjusting the light intensity while keeping the magnetic field constant.

Band bending at semiconductor surfaces and interfaces is the key to applications ranging from classical transistors to topological quantum computing. A semiconductor particularly important for optical as well as microwave devices is GaN. What makes the material useful is not only its large bandgap but also that it can be heavily doped to become metallic. Here, we apply soft-x-ray angle-resolved photoelectron spectroscopy (ARPES) to metallic Si-doped GaN to explore the electron density and momentum-resolved band dispersions of the valence and conduction electrons varying through the surface band-bending region. We find an upward band bending, where the measured band occupation reduces toward the surface, as probed with low photon energies <0.5 keV. The band occupation approaches the bulk value, matching Hall effect measurements, as the photon energy increases to >1.4 keV, where the photoelectron mean free path exceeds the spatial extent of the band-bending region. Our quantitative analysis of the experimental data describes the potential variation in the band-bending region via self-consistent Poisson-Schrodinger equations. We put forward an insightful model to simulate the ARPES spectra from this region through summing up the contribution from all atomic layers, weighted by the photoelectron mean free path, under in-phase conditions achieved at particular values of the photoelectron out-of-plane momentum. The model adequately describes the peculiarities of the ARPES spectra caused by the surface band bending, including the photon-energy dependence of the apparent band occupation and Fermi-surface area, and allows accurate determination of the band-bending profile and values of the photoelectron mean free path. Finally, comparison of our data with supercell density functional theory calculations reveals the preferential location of Si atoms as substitutional for Ga, with the doped electrons entering the GaN conduction bands without formation of separate impurity states as would occur for Si interstitials. Our theoretical and experimental results resolve fundamental questions underpinning device performance of the GaN-based and other semiconductor materials in general and demonstrate a general methodology for quantitative studies of electron states in the band-bending region.