National Institute Of Materials Physics - Romania

Nanoscale thermometers with high sensitivity are needed in domains which study quantum and classical effects at cryogenic temperatures. Here, we present a micrometer sized and nanometer thick chromium selenide cryogenic temperature sensor capable of measuring a large domain of cryogenic temperatures down to tenths of K. Hexagonal Cr-Se flakes were obtained by a simple physical vapor transport method and investigated using scanning electron microscopy, energy dispersive X-ray spectrometry and X-ray photoelectron spectroscopy measurements. The flakes were transferred onto Au contacts using a dry transfer method and resistivity measurements were performed in a temperature range from 7 K to 300 K. The collected data have been fitted by exponential functions. The excellent fit quality allowed for the further extrapolation of resistivity values down to tenths of K. It has been shown that the logarithmic sensitivity of the sensor computed over a large domain of cryogenic temperature is higher than the sensitivity of thermometers commonly used in industry and research. This study opens the way to produce Cr-Se sensors for classical and quantum cryogenic measurements.

In this work, new results concerning the potential of mixtures based on nitrogen doped titanium dioxide (TiO2:N) and carbon nanotubes (CNTs) as possible catalyst candidates for the rhodamine B (RhB) UV photodegradation are reported. The RhB photodegradation was evaluated by UV-VIS absorption spectroscopy using samples of TiO2:N and CNTs of the type of single-walled carbon nanotubes (SWNTs), double-wall carbon nanotubes (DWNTs), multi-wall carbon nanotubes (MWNTs), and single-walled carbon nanotubes functionalized with carboxyl groups (SWNT-COOH) having various concentrations of CNTs. The best photocatalytic performance was obtained for sample containing TiO2:N and 2.5 wt.% SWNTs-COOH, when approx. 85% of dye removal was achieved after 300 min. of UV irradiation. The reaction kinetics of RhB aqueous solutions containing TiO2:N/CNT mixtures followed a complex first-order kinetic model. The TiO2:N/CNTs catalyst induced higher photodegradation efficiency of RhB than TiO2:N due to the presence of CNTs, which act as adsorbent and dispersing agent and capture the photogenerated electrons of TiO2:N hindering the electron-hole recombination.

Herein, the properties of the organic heterostructures with triple-layer ZnO/Ag/ZnO as a replacement for ITO and mixed layer containing arylenevinylene oligomer (based on triphenylamine or carbazole) donor and nonfullerene (perylene diimide) acceptor mixed in the ratio 1:2 and the effect of a buffer layer of PEDOT-PSS intercalated between triple layer and mixed organic layer are discussed. The UV-vis transmission and photoluminescence (PL) properties are investigated in correlation with the surface topography and reveal a good match between the absorption and emission domain, which can favor the generation of the charge carriers. The heterostructure with the mixed layer based on triphenylamine oligomer shows the widest absorption domain, and the PL spectra of the heterostructures realized with either triphenylamine or carbazole oligomer show peaks corresponding to the radiative decay of the donor and acceptor. The I-V characteristics in the dark indicate a slightly nonlinear behavior and the current is affected by the charge carriers recombination on the defects present in the thick mixed layer deposited by matrix-assisted pulsed laser evaporation. The effect of the PEDOT-PSS buffer layer on the electrical properties of the organic heterostructure with ZnO/Ag/ZnO electrode is also investigated.

The dependencies of the BiOi defect concentration on doping, irradiation fluence and particle type in p-type silicon diodes have been investigated. We evidenced that large data scattering occurs for fluences above 10(12) 1 MeV neutrons/cm(2), becoming significant larger for higher fluences. We show that the BiOi defect is metastable, with two configurations A and B, of which only A is detected by Deep Level Transient Spectroscopy and Thermally Stimulated Currents techniques. The defect' electrical activity is influenced by the inherent variations in ambient and procedural experimental conditions, resulting not only in a large scattering of the results coming from the same type of measurement but making correlation between different types of experiments difficult. It is evidenced that the variations in [BiOiA] are triggered by subjecting the samples to an excess of carriers, by either heating or an inherent short exposure to ambient light when manipulating the samples prior to experiments. For the samples investigated in this work both, the [BiOiA] as determined from electrical spectroscopic measurements and the full depletion voltage as measured from Current-Voltage characteristics reach a steady state in similar to 7h. Any electrical measurement performed before will give a different result. The bi-stable behavior of the BiOi defect fully accounts for these variations.

Phosphate tellurite glasses, with a nominal composition of 40%ZnO+40%P2O5+20%TeO2, have been synthesized by melt quenching procedure. P2O5 can lead to chemically stable phosphate tellurite glasses, compared with those classical synthesized with H3PO4. Magneto-optical measurements have shown a derivative A(1) term centered at 532 nm originating from a transition to a degenerated excited state associated with tellurium colloids. The glass densities, measured by the Archimedes method at room temperature, display an increasing value with the melting temperature of the samples. The electrical conductivity shifts toward lower frequencies with the increased melting temperature, being influenced by the mobile charges, which require lower thermal activation energy due to the Te-o metallic particles. Together with dielectric constant, the electrical conductivity underlines structural changes, by increasing the melting temperature, associated with the presence of Te-o nanoclusters.

Cu-Fe-Sn-S have been electrodeposited on indium tin oxide coated glass (ITO/glass) substrates, varying only the deposition time, followed by sulfurization in argon atmosphere at a temperature of 500 degrees C. X-ray diffraction patterns confirmed the formation of polycrystalline CFTS and other secondary phases. The Raman spectroscopy results confirm the formation of stannite phase, by the existence of the most intense peak at 330 cm(-1) corresponding to A-symmetry vibrational mode, while the SnS2 surface phase reduces upon increasing deposition time. The inferred bandgaps by specular transmission are in 1.4-1.7 eV range, influenced by the detected orthorhombic Cu4SnS4 and rhodostannite secondary phases. The electrical measurements confirm the p-type nature of the films, while density of free carriers is relatively high (similar to 10(19) cm(-3)), leading to extremely low resistivity in the Omega cm range.

Human society's demand for energy has increased faster in the last few decades due to the world's population growth and economy development. Solar power can be a part of a sustainable solution to this world's energy need, taking into account that the cost of the renewable energy recently dropped owed to the remarkable progress achieved in the solar panels field. Thus, this inexhaustible source of energy can produce cheap and clean energy with a beneficial impact on the climate change. The considerable potential of the organic photovoltaic (OPV) cells was recently emphasized, with efficiencies exceeding 18% being achieved for OPV devices with various architectures. The challenges regarding the improvement in the OPV performance consist of the selection of the adequate raw organic compounds and manufacturing techniques, both strongly influencing the electrical parameters of the fabricated OPV devices. At the laboratory level, the solution-based techniques are used in the preparation of the active films based on polymers, while the vacuum evaporation is usually involved in the deposition of small molecule organic compounds. The major breakthrough in the OPV field was the implementation of the bulk heterojunction concept but the deposition of mixed films from the same solvent is not always possible. Therefore, this review provides a survey on the development attained in the deposition of organic layers based on small molecules compounds, oligomers and polymers using matrix-assisted pulsed laser evaporation (MAPLE)-based deposition techniques (MAPLE, RIR-MAPLE and emulsion-based RIR-MAPLE). An overview of the influence of various experimental parameters involved in these laser deposition methods on the properties of the fabricated layers is given in order to identify, in the forthcoming years, new strategies for enhancing the OPV cells performance.

Ferroelectric alpha-Fe2O3/BaTiO3 photoanodes (hematite/BT) were fabricated on FTO and FTO/TiO2 substrates using a hydrothermal process and spin coating along with thermal treatments. The prepared hematite nanowires had length under 1 mu m and the BT film was about 18 nm thick. SEM, TEM and XPS investigations prove the formation of alpha-Fe2O3/BaTiO3 heterojunction structure. The ferroelectric poling of hematite/BT heterojunction was conducted both in propylene carbonate and in air. The photoelectrochemical performance of hematite/BT photoanodes is strongly influenced by the direction of ferroelectric polarization. The positive poling of the hematite/BT prepared on FTO/TiO2 substrate produces a 40.4% photocurrent density enhancement, in comparison with not poled version of the sample. Electrochemical impedance spectroscopy measurements provided usefull information regarding the effect of ferroelectric polarization on the charge transfer kinetics at the photoanode/electrolyte interface. (C) 2021 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.

Highly conductive carbon-based thin films have been produced by low-energy electron irradiation. Low-energy electron irradiation at a lower density of electrons eliminates the sp(3) hybridization of the carbon atoms by reducing the chemical groups on the surface. Irradiated carbon-based thin films became highly conductive layers that could be used as electrodes for optoelectronic devices. The electrical conductivity sigma reached 3 x 10(4) S/m in the case of samples irradiated at a lower density, with a mean value between 3 x 10(5) S/m and 3.3 x 10(2) S/m for highly crystalline graphite structures. The increasing (002) peak diffraction and decreasing intensity ratio ID/IG in the Raman spectra as well as the decreasing bandgap in photoluminescence measurements demonstrated the reduction of oxygen-induced defects in these thin films.