National Institute Of Materials Physics - Romania

Synapses play a vital role in information processing, learning, and memory formation in the brain. By emulating the behavior of biological synapses, electronic synaptic devices hold the promise of enabling high-performance, energy-efficient, and scalable neuromorphic computing. Ferroelectric memristive devices integrate the characteristics of both ferroelectric and memristive materials and present a far-reaching potential as artificial synapses. Here, it is reported on a new ferroelectric device on silicon, a field-effect memristor, consisting of an epitaxial ultrathin ferroelectric Hf(0.5)Z(r0.5)O(2) film sandwiched between an epitaxial highly doped oxide semiconductor SrTiO3-delta and a top metal. Upon a low voltage of less than 2 V, the field-effect modulation in the semiconductor enables to access multiple states. The device works in a large time domain ranging from milliseconds down to tens of nanoseconds. By gradually switching the polarization by identical pulses, the ferroelectric diode devices can dynamically adjust the synaptic strength to mimic short- and long-term memory plasticity. Ionic contributions due to redox processes in the oxide semiconductor beneficially influence the device operation and retention.

Dense samples of MgB2, with a relative density of 98.3-99.1 %, were prepared by ex-situ spark plasma sintering using a raw powder supplied by Alfa Aesar. Samples were added with Ge-based organometallics (repagermanium/RGe, propagermaniu/PGe, linear Ge-based organometallic/GeSP, and Na-doped octamer/8THGP-Na) for the starting composition (MgB2)(Ge-based organometallics)0.0014. Except for the 8THGP-Na, they have a similar chemical composition in respect to Ge and C, while the crystal structure differs. Below 20 K, all studied additions increased the critical current density, Jc, and the irreversibility field, Hirr. Samples added with GeSP and 8THGPNa have marginal differences regarding superconducting characteristics. The best Jc and Hirr are obtained for the sample added with RGe. This sample has the highest amount of carbon in the crystal lattice of MgB2. Results point out that there is a complex influence of the additive on carbon behaviour. Although in general it is accepted that a higher amount of carbon produces higher Jc and Hirr, a comparison with the literature indicates that C-rich raw MgB2 powders (e.g. the C-enhanced MgB2 nanopowder produced by Pavezyum) are not suitable to promote strong superconductivity enhancement in the samples added with indicated organometallics, and the origin, states, and evolution of carbon should to be carefully assessed.

The effect of the annealing temperature on 1% nitrogen-doped WO3 materials was studied, which were then used as electrode materials for high-performance supercapacitor (SC) devices. The supercapacitive performance of the proposed materials was strongly influenced by the doping element and the annealing temperature by directly changing the defect structure of the host material. The 1% N-doped WO3 materials annealed at different temperatures were thoroughly characterized through various characterization techniques, including electron paramagnetic resonance and photoluminescence spectroscopy, giving insight into the effect of N-doping on the defect structure and optical properties of WO3. When the WO3:N materials were used as electrode material in symmetric SCs, the doping element and the annealing temperature improved the electrochemical performance. No booster materials (such as carbon black) were used in the symmetric SC designs, showing increased specific capacitance (102 F/g) and energy density (14.6 W h/kg) values.

Undoped and Sm3+doped 45P2O5-45Na2O-2Al2O3-8BaO glasses were synthesized by the melt-quenching technique. The glass structure and luminescence properties were investigated by using Raman spectroscopy, scanning electron microscopy (SEM), spectroscopic ellipsometry, Judd-Ofelt theory and photoluminescence. Electron microscopy showed the homogeneity of samples. Raman spectroscopy revealed that the overall struc-ture of the glass was unaffected by the doping of Sm3+ and ellipsometry was used to measure the optical constants. Judd-Ofelt (JO) analysis was performed on the absorption bands of Sm3+ (4f5) and the three phenomenological parameters (omega 2, omega 4, and omega 6) were computed and then used to determine radiative properties such as the radiative transition probability (Ar), the fluorescent branching ratio (beta r), the stimulated emission cross-section (sigma e) and the radiative lifetime (tau rad). Photoluminescence (PL) spectrum showed the typical four transitions of Sm3+ at wavelengths of 564, 600, 645 and 703 nm corresponding to 4G5/2 -> 6H5/2, 6H7/2, 6H9/2 and 6H11/2, respectively. The spectroscopic quality factors omega 4/omega 6, the predicted lifetime (tau rad) calculated using the JO method and the experimentally lifetime (tau exp) for the 4G5/2level were calculated and discussed. The glass color purity is as high as 98%, which makes it a potential candidate for laser emission.

In this work, electrochemical deposition techniques (galvanostatic and potentiostatic) were used to obtain coatings of a new composite polymer, 3-methylpyrrole-sodium dodecyl sulfate/poly 2-methythiophene (P3MPY-SDS/P2MT), on cobalt-based alloy samples for anti-corrosion safety. The use of sodium dodecyl sulfate as a dopant ion in electrosynthesis can have a relevant effect on the anticorrosive property of the composite polymer layer by blocking the entry of corrosive ions. The cobalt alloy specimen had an important impact on the electrochemical performance of the composite coating and this together with the presence of the polymeric layer was achieved by simultaneously constitution of a complex oxides film and polymeric layers. The polymeric coatings were analyzed using scanning electron microscopy (SEM), Fourier transform infrared (FT-IR) spectroscopy, and cyclic voltammetry (CV) methods. The corrosion protection of the P3MPY-SDS/P2MT-covered cobalt-based alloy was explored using electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization procedures in a 1 M HCl solution. The corrosion speed of the P3MPY-SDS/P2MT-covered cobalt-based alloy was observed to be similar to 10 times less than an uncovered specimen, and the effectiveness of the composite layers of this coating is greater than 91%. This superior efficaciousness was obtained by the electropolymerization of P3MPY-SDS/P2MT at current densities of 1 mA/cm(2) and 0.5 mA/cm(2), applied potentials of 0.9 V and 1.0 V, and a molar ratio of 5:1. Corrosion test results indicate that the P3MPY-SDS/P2MT coatings provide a good result: protection against the corrosion of a cobalt-based alloy in aggressive solutions.

In this paper, graphene was obtained on a copper substrate using the CVD method, and then it was transferred to various substrates such as glass and SiO2/Si patterned with metallic interdigitated electrodes. The graphene thus obtained was characterized using Raman spectroscopy, scanning electron microscopy (SEM), current-voltage measurements, and electrochemical methods, in order to be used for sensing applications.

. The study on efflorescence in salts collected from Curtea de Arges cathedral's exterior wall during restorations aimed to characterize compounds and lithic material using SEM-EDX, XRD, Raman, FTIR. Radiocarbon measurements using AMS method and FTIR results demonstrate decarbonation/recarbonation at the compound-lithic interface but further research is required.

High density samples (92-94.5 %) of MgB2 were prepared by Spark Plasma Sintering (SPS). The on-off pulsed current patterns of SPS processing were 8-4, 12-2, 24-2, 99-1. Patterns with more on pulses favor formation of a higher amount of the secondary MgB4 phase through the decomposition of MgB2. They also promote enhancement of larger MgO crystallites without a strong increase in the amount of this phase. Densification rate and pressure in the SPS chamber show a similar behavior, but their amplitude varies and the temperatures defining different stages present some shifts. As-revealed differences induced by pulsed patterns impact superconducting properties in a complex manner. An attempt to assess correlations between the pattern and different superconducting parameters is presented.

Cu2ZnSnSe4 thin films have been synthesized by employing two magnetron-sputtering depositions, interlaced with two sequential post-deposition heat treatments in low vacuum, Sn+Se and Se-rich atmospheres at 550 degrees C. By employing successive structural analysis methods, namely Grazing Incidence X-Ray Diffraction (GIXRD) and Raman Spectroscopy, secondary phases such as ZnSe coexisting with the main kesterite phase have been identified. SEM peered into the surface morphology of the samples, detecting structural defects and grain profiles, while EDS experiments showed off-stoichiometric elemental composition. The optical bandgaps in our samples were calculated by a widely used extrapolation method from recorded transmission spectra, holding values from 1.42 to 2.01 eV. Understanding the processes behind the appearance of secondary phases and occurring structural defects accompanied by finding ways to mitigate their impact on the solar cells' properties is the prime goal of the research beforehand.

Among various "families" of iron-based superconductors, the quite recently discovered AeAFe(4)As(4) (where Ae is an alkali-earth metal and A is an alkali metal) has high critical current density, a very high upper critical field, and a low anisotropy, and has recently received much interest for the possibility of high magnetic field applications at the liquid hydrogen temperature. We have performed DC magnetization relaxation and frequency-dependent AC susceptibility measurements on high-quality single crystals of CaKFe4As4 with the aim of determining the pinning potential U*. The temperature dependence of U* displays a clear crossover between elastic creep and plastic creep. At temperatures around 27-28 K, U* has a very high value, up to 1200 K, resulting in an infinitesimally small probability of thermally activated flux jumps. From the dependence of the normalized pinning potential on irreversible magnetization, we have determined the creep exponents in the two creep regimes, which are in complete agreement with theoretical models. The estimation of the pinning potential from multifrequency AC susceptibility measurements was possible only near the critical temperature due to equipment limitations, and the resulting value is very close to the one that resulted from the magnetization relaxation data. Magnetic hysteresis loops revealed a second magnetization peak and very high values of the critical current density.