National Institute Of Materials Physics - Romania

We report a direct photoelectrochemical response from low cost carbon dots (CDs) prepared from chitosan via a solvothermal method. The carbon dots were covalently linked to an indium tin oxide (ITO) surface through a self-assembled silane monolayer. We attribute the photocurrent of the ITO-silane-CD surface to a photogenerated electron-transfer process by CDs under illumination with a wavelength of 420 nm to 450 nm. The self-assembled monolayer of CDs was used for ac-photocurrent imaging of the surface with micron scale lateral resolution. This discovery opens up new applications for CDs as biocompatible, light-addressable electrochemical sensors in bioanalytical and bioimaging applications.

The catalytic performances of two different classes of catalysts containing nickel or/and ruthenium as the active sites were studied in the depolymerisation of lignin isolated from Miscanthus x giganteus. The catalysts were prepared either by coprecipitation (ie, (RuNiMgAlO)x, (RuNiAlO)x, (NiAlO)x, (NiMgAlO)x) or by wet impregnation (ie, Ru/Al2O3) and characterized by nitrogen physisorption (BET), XRD, XPS, NH3-TPD, Raman and H-2-TPR techniques. The experimental results indicate that the presence of ruthenium led to dimers as dominant products.

The growth of graphene by molecular beam epitaxy from an elemental carbon precursor is a very promising technique to overcome some of the main limitations of the chemical vapour deposition approach, such as the possibility to synthesize graphene directly on a wide variety of surfaces including semiconductors and insulators. However, while the individual steps of the chemical vapour deposition growth process have been extensively studied for several surfaces, such knowledge is still missing for the case of molecular beam epitaxy, even though it is a key ingredient to optimise its performance and effectiveness. In this work, we have performed a combined experimental and theoretical study comparing the growth rate of the molecular beam epitaxy and chemical vapour deposition processes on the prototypical Ir (111) surface. In particular, by employing high-resolution fast X-ray photoelectron spectroscopy, we were able to follow the growth of both single- and multi-layer graphene in real time, and to identify the spectroscopic fingerprints of the different C layers. Our experiments, supported by density functional theory calculations, highlight the role of the interaction between different C precursor species and the growing graphene flakes on the growth rate of graphene. These results provide an overview of the main differences between chemical vapour deposition and molecular beam epitaxy growth and thus on the main parameters which can be tuned to optimise growth conditions.

This work focuses on the kinetic mechanisms responsible for the annealing behavior of radiation cluster-related defects with impact on the electrical performance of silicon sensors. Such sensors were manufactured on high resistivity n-type standard float-zone (STFZ) and oxygen enriched float-zone (DOFZ) material and had been irradiated with mono-energetic electrons of 3.5 MeV energy and fluences of 3 x 10(14) cm(-2) and 6 x 10(14) cm (-2). After irradiation, the samples were subjected either to isochronal or isothermal heat treatments in the temperature range from 80 degrees C to 300 degrees C. The specific investigated defects are a group of three deep acceptors [H(116 K), H(140 K), and H(152 K)] with energy levels in the lower half of the band gap and a shallow donor E(30 K) with a level at 0.1 eV below the conduction band. The stability and kinetics of these defects at high temperatures are discussed on the basis of the extracted activation energies and frequency factors. The annealing of the H defects takes place similarly in both types of materials, suggesting a migration rather than a dissociation mechanism. On the contrary, the E(30 K) defect shows a very different annealing behavior, being stable in STFZ even at 300 degrees C, but annealing-out quickly in DOFZ material at temperatures higher than 200 degrees C, with a high frequency factor of the order of 10(13) s(-1). Such a behavior rules out a dissociation process, and the different annealing behavior is suggested to be related to a bistable behavior of the defect. Published by AIP Publishing.

Controlling the semiconductor-to-metal transition temperature in epitaxial VO2 thin films remains an unresolved question both at the fundamental as well as the application level. Within the scope of this work, the effects of growth temperature on the structure, chemical composition, interface coherency and electrical characteristics of rutile VO2 epitaxial thin films grown on TiO2 substrates are investigated. It is hereby deduced that the transition temperature is lower than the bulk value of 340 K. However, it is found to approach this value as a function of increased growth temperature even though it is accompanied by a contraction along the V4+-V4+ bond direction, the crystallographic c-axis lattice parameter. Additionally, it is demonstrated that films grown at low substrate temperatures exhibit a relaxed state and a strongly reduced transition temperature. It is suggested that, besides thermal and epitaxial strain, growth-induced defects may strongly affect the electronic phase transition. The results of this work reveal the difficulty in extracting the intrinsic material response to strain, when the exact contribution of all strain sources cannot be effectively determined. The findings also bear implications on the limitations in obtaining the recently predicted novel semi-Dirac point phase in VO2/TiO2 multilayer structures.

The adsorption of Si atoms on a metal surface might proceed through complex surface processes, whose rate is determined differently by factors such as temperature, Si coverage, and metal cohesive energy. Among other transition metals, iridium is a special case since the Ir(111) surface was reported first, in addition to Ag(111), as being suitable for the epitaxy of silicene monolayers. In this study we followed the adsorption of Si on the Ir(111) surface via high resolution core level photoelectron spectroscopy, starting from the clean metal surface up to a coverage exceeding one monolayer, in a temperature range between 300 and 670 K. Density functional theory calculations were carried out in order to evaluate the stability of the different Si adsorption configurations as a function of the coverage. Results indicate that, at low coverage, the Si adatoms tend to occupy the hollow Ir sites, although a small fraction of them penetrates the first Ir layer. Si penetration of the Ir surface can take place if the energy gained upon Si adsorption is used to displace the Ir surface atoms, rather then being dissipated differently. At a Si coverage of similar to 1 monolayer, the Ir 4f spectrum indicates that not only the metal surface but also the layers underneath are perturbed. Our results point out that the Si/Ir(111) interface is unstable towards Si-Ir intermixing, in agreement with the silicide phase formation reported in the literature for the reverted interface.

By platinum deposition on a 150 nm thick film of lead zirco-titanate oriented PZT(001), grown on strontium titanate (001) single crystals with a strontium ruthenate buffer layer, which did not show initial preferential out-of-plane orientation of its ferroelectric polarization, a band bending near the interface towards lower energies is observed using photoelectron spectroscopy, by following all core levels from the substrate (Pb 4f, Zr 3d, Ti 2p, O 1s). This is unexpected given the fact that platinum has a larger work function than PZT and a rectifying contact for electrons is expected to be built at the interface. This observation may have two explanations: (i) platinum forms an alloy with elements from PZT yielding a metal with considerable lower work function; (ii) platinum provides electrons to the substrate which are able to compensate the depolarization field generated by the outwards polarization state. Several arguments are brought in favor of the second hypothesis, especially the attenuation of core levels from the substrate which is well described by exponential functions with reasonable values of the photoelectron inelastic mean free path, suggesting the formation of a sharp interface. High resolution transmission electron microscopy confirmed the sharpness of the interface. (C) 2017 Elsevier B.V. All rights reserved.

Nowadays, the advances materials science have created the possibility of using nanomaterials as adsorbents in environmental technologies. This study is focused on the evaluation of C-HAp powders capacity in lead ions removal from contaminated solutions. The C-HAp powders after removal of lead (Pb2+) ions from contaminated water were characterized by X-Ray Photoelectron Spectroscopy (XPS) and Energy Dispersive X-ray analysis (EDX). The presence of lead in the hydroxyapatite powders after removal experiments was observed in the XPS general spectrum and also in the EDX spectra. In addition, the AAS studies revealed that the C-HAp powders possess a high affinity towards lead ions with an effective removal rate of 80% for an initial lead concentration of 20 mg.L-1.

Sodium dodecyl sulfate (SDS) effects at the electrified p- and n-GaAs(100)/H2SO4 interfaces were investigated by EIS, XPS and AFM. XPS data revealed that under the open circuit conditions, SDS adsorption on GaAs(100) results in a protective overlayer which prevents the further oxidation in air of both types of semiconductor surfaces. The dopant nature is, however, decisive for the way of bonding the surfactant molecule to the surface. At the p-doped substrate, SDS adsorbs mainly at As sites by its hydrocarbon tail and by the anion head to the Ga sites at the n-doped one. Although the surfactant behaves as a dipole under the applied potential control, the dopant type plays a key role in the SDS interaction with GaAs(100) electrodes too. EIS data evidenced that SDS interaction with n-GaAs(100) electrode brings a pronounced decrease of the capacitive contribution of the surface states and a shift of the flatband potential to less negative values, unlike the p-doped one, where no significant change in its electronic properties was observed. These results were rationalized in terms of surface states- and field-effects operating at the electrified interfaces under discussion. (C) The Author(s) 2017. Published by ECS.

Pd-Ge based ohmic contacts on III-V semiconductor e.g.Pd-Ge on n-GaAs are viewed as a viable alternative to low contact resistance metallization. As it was remarked [11, together with the device dimensions decrease, the AuGeNi metallization system becomes inadequate for shallow-junction devices. This characteristic is related to the formation of a low melting point beta- AuGa phase that leads to a poor contact thermal stability. Gallium Antimonide is anIII-V semiconductor compound that can be used in a photovoltaic convertor of GaAs/GaSb tandem stack With a predicted efficiency of 30%. Reduced series resistance on GaSb cells can be achieved by the improving of contact metallization properties. The present study is dedicated to the preparation conditions and structural analyzing of PdGe based contacts on n-GaSb, namely: Pd/Au/Ge. There are presented the depth profiling for PdGe metallization obtained from XPS measurements, and morphologic studies arisen from SEM technique and AFM technique.