National Institute Of Materials Physics - Romania

Reducing the recombination rate of photo-generated electron-hole pairs in the surface of pristine TiO2 materials can be done, among others, via local spatial charge separation in the photocatalytically active surface region. A local electric field acting for this purpose can be ensured, for instance, in hetero-junction regions formed at the interface between a TiO2 film and a WO3 ultra-thin layer. The option for the WO3-TiO2 semiconductor pair is related to the suitable fit of their band structures. To model the interface, a more in-depth knowledge of local atomic environment is required. Here, we discuss the local atomic ordering and the related effects in the interface region of TiO2/WO3 and WO3/TiO2 structures grown on Si (100) substrates. Materials characterization was done by using XRD, XPS and XAS techniques. We demonstrate that tungsten atoms enter as W6+ or W4+ cations into the rutile-type TiO2 lattice, by substituting the Ti4+ cations. While W6+-Ti4+ substitution leaves the surrounding rutile matrix unchanged, the W4+-Ti4+ substitution induces a local rutile-to-anatase transition. The current results are relevant in designing new applications structures with enhanced photocatalytic performances.

The depth composition of the thin layer alloy, AuGeNi, devoted to acting as an ohmic contact on n-GaAs(110) has been investigated by in situ XPS combined with Argon ion sputtering techniques. The fresh cleaved surfaces, supposed to be free of oxygen, were usually deposited with a 200nm metallic layer in high vacuum conditions (better than 10(-7) torr), by thermal evaporation, and annealed at a 430-450 degrees Celsius temperature for 5 minutes. About 18 sessions of ion Ar surfaces etching and intermediate XPS measurements were performed in order to reveal the border of the metal/semiconductor interface. The atomic concentrations of the chemical elements have been approximated. Au4f, Ga3d, Ga2p, As3d, As2p, Ni2p(3/2), Ge3d, O1s, and C1s spectral lines were recorded. The Au, Ge, and Ni have a homogenous distribution while Ga and As tend to diffuse to the surface. Oxygen is present in the first layers of the surface while carbon completely disappears after the second etching step. The existence of an Au-Ga alloy was detected and XPS spectra show only metal Ni and Ge within the layer and at the interface. We tried to perform a study about the depth chemical composition profile analysis of AuGeNi layer on cleaved n-GaAs(110) by X-Ray Photoelectron Spectroscopy (XPS) technique.

Carbon layers grown on lead zirco-titanate (PZT) weakly interact with the substrate and exhibit a nearly two dimensional character, up to a carbon surface density approaching that of graphene. The first feature is evidenced by X-ray photoelectron spectroscopy, and the second by angle resolved near-edge-absorption spectroscopy (NEXAFS). The binding energies and lineshape parameters of C 1s are similar to that of graphene. The dichroism of C K-edge NEXAFS shows the prevalence of in-plane sp(2) bonds for layers whose effective coverage is below the graphene surface density. The polarization state of the substrate, oriented outwards, is preserved upon carbon deposition. The surface Pb content is strongly affected by the carbon ad-layers.

A bimodal (micro/mesoporous) COF was synthesized by coupling tetrakis-1,3,5,7-(4'-iodophenyl) adamantane with 4,4'-diethynylbiphenyl following a Sonogashira protocol. The COF preparation strategy led, however, to the incomplete recovery of the palladium catalyst and ICP-OES analysis indicated that around 0.1 wt% palladium remained inside the pores. Noteworthily, the remnant palladium catalyst is still accessible and can be valorised in additional catalytic reactions like the hydrogenation of nitrostyrene. Further deposition of 0.5 wt% active metals (like palladium or gold) enhanced the catalytic activity and tuned the catalyst selectivity with respect to analogous metal catalysts prepared using active carbon as a support. The resulting COF-supported metal NPs are stable and recyclable catalysts. Under normal conditions, this COF is also able to adsorb large amounts of weak electrophilic gases like carbon dioxide.

Epitaxial La0.67Ba0.33Ti0.02Mn0.98O3 (denoted as LBTMO hereafter) thin films of approximately 95 nm thickness were deposited by a pulsed laser deposition technique onto SrTiO3 (STO) (001) substrates. High-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) investigations revealed that the films are epilayers with a four-fold symmetry around the [001] direction. Cross-sectional TEM and the presence of Pendellosung fringes in the XRD profiles demonstrate smooth interfaces. The STO substrate induces an in-plane compressive strain, which leads to a slight tetragonality of the film structure. The epilayers exhibit paramagnetic-to-ferromagnetic phase transitions at the Curie temperature T-C (286 K), close to room temperature. The magnetization easy axis lies in the film plane along the [100] direction of the (001) substrate. The magnetic entropy change (Delta S-M) associated with the second-order magnetic phase transition was determined via magnetization measurements in the temperature range between 210 and 350 K under different magnetic fields. The relative cooling power (RCP) of this film is about 220 J kg(-1), somewhat lower than that of bulk Gd (410 J kg(-1)) for a 50 kOe field change, making the LBTMO ferromagnetic thin films a promising candidate for micro/nanomagnetic refrigeration around room temperature. The proposed universal curve provides a simple method for extrapolating Delta S-M in a wide range of fields and temperatures, thus confirming the order of the magnetic transition in this system. The magnetic entropy (Delta S-M)(max) around T-C is proportional to (mu H-0/T-C)(2/3) in agreement with the mean-field theory, indicating the existence of long-range ferromagnetic interactions in epitaxial LBTMO thin films.

A two dimensional photonic crystal with hexagonal symmetry is investigated by finite-difference time-domain and finite difference frequency-domain theoretical calculations. The system consist in a germanium substrate patterned with holes of different radii, varying from 0.1 alpha to 0.45 alpha, The photonic band gaps (PBGs) and the reflectance spectra allow a complete characterization of the structure. It was shown the presence of PBGs at telecommunication wavelengths which makes the present systems suitable for optoelectronic applications, representing a potential alternative to Si-based technology

We report the applicability of a hybrid system comprising a La3+-based catalyst and an Au/TiO2 photocatalyst in the decomposition of chemical weapons. This system is able to perform complete degradation of soman, sarin and VX in less than 1 minute under low basic conditions and visible light irradiation.

By coupling two spectral techniques, namely, X-ray photoelectron and specular reflection infrared spectroscopy at high reflection angles, we identified, in this paper,. the formation of SiO2 respectively SiOx (1 < x < 2) structures on the surface of polydimethylsiloxane thin films. These layers have been obtained as a result of placing a thin liquid film precursor on a germanium substrate under corona charge injection in multipoints to plane electrodes configuration in air at atmospheric pressure for 2 hours.

The effects of the bonding mechanism and band alignment in a ferroelectric (FE) BaTiO3/ferromagnetic La0.6Sr0.4MnO3 heterostructure are studied using x-ray photoelectron spectroscopy and first-principles calculations. The band lineup at the interface is determined by a combination of band bending and polarization-induced modification of core-hole screening. A Schottky barrier height for electrons of 1.22 +/- 0.17 eV is obtained in the case of downwards FE polarization of the top layer. The symmetry of the bonding states is emphasized by integrating the local density of states +/- 0.2 eV around the Fermi level, and strong dependence on the FE polarization is found: upwards, polarization stabilizes Ti t(2g) (xy) orbitals, while downwards, polarization favors Ti t(2g) (yz) symmetry. It is predicted that the abrupt (La, Sr)vertical bar TiO2 interface is magnetoelectrically active, leading to a A-type antiferromagnetic coupling of the first TiO2 interface layer with the underlying manganite layer through a superexchange mechanism.