National Institute Of Materials Physics - Romania

This paper presents the very first surface physics experiment performed in ultrahigh vacuum (UHV) in Romania, using a new molecular beam epitaxy (MBE) installation. Cleaning of a Si(001) wafer was achieved by using a very simple technique: sequences of annealing at 900-1000 degrees C in ultrahigh vacuum: low 10(-8) mbar, with a base pressure of 1.5 x 10(-10) mbar. The preparation procedure is quite reproducible and allows repeated cleaning of the Si(001) after contamination in ultrahigh vacuum. The Si(001) single crystal surface is characterized by low energy electron diffraction (LEED), reflection high energy electron diffraction (RHEED), and Auger electron spectroscopy (AES). The latter technique is utilized in order to investigate the sample contamination by the residual gas in the UHV chamber, as determined by a residual gas analyzer (RGA). Unambiguous assignment of oxidized and unoxidized silicon is provided; also, an important feature is that the LVV Auger peak at 90-92 eV cannot be solely attributed to clean Si (i.e. Si surrounded only by Si), but also to silicon atoms bounded with carbon. Even with a sum of partial pressures of oxygen and carbon containing molecules in the range of 5 x 10(-10) mbar, the sample is contaminated very quickly, having a (1/e) lifetime of about 76 minutes.

Ultrathin ferromagnetic Fe layers on Si(001) have recently been synthesized using the molecular beam epitaxy (MBE) technique, and their structural and magnetic properties, as well as their interface reactivity have been investigated. The study was undertaken as function of the amount of Fe deposited and of substrate temperature. The interface reactivity was characterized by Auger electron spectroscopy (AES). The surface structure was characterized by low-energy electron diffraction (LEED). The magnetism was investigated by magneto-optical Kerr effect (MOKE). A higher deposition temperature stabilizes a better surface ordering, but it also enhances Fe and Si interdiffusion and it therefore decreases the magnetism. Despite the rapid disappearance of the long range order with Fe deposition at room temperature, the material exhibits a significant uniaxial in-plane magnetic anisotropy. For the Fe deposition performed at high temperature (500 degrees C), a weak ferromagnetism is still observed, with saturation magnetization of about 10 % of the value obtained previously. MOKE studies allowed inferring the main properties of the distinct formed layers.

Pure and europium (Eu3+) doped cerium dioxide (CeO2) nanocrystals have been synthesized by a novel oil-in-water microemulsion reaction method under soft conditions. In-situ X-ray diffraction and RAMAN spectroscopy, high-resolution transmission electron microscopy, UV/Vis diffuse-reflectance and Fourier transform infrared spectroscopy as well as time-resolved photoluminescence spectroscopy were used to characterize the nanaocrystals. The as-synthesized powders are nanocrystalline and have a narrow size distribution centered on 3 nm and high surface area of similar to 250 m(2) g(-1). Only a small fraction of the europium ions substitutes for the bulk, cubic Ce4+ sites in the europium-doped ceria nanocrystals. Upon calcination up to 1000 degrees C, a remarkable high surface area of similar to 120 m(2) g (-1) is preserved whereas an enrichment of the surface Ce4+ relative to Ce3+ ions and relative strong europium emission with a lifetime of similar to 1.8 ms and FWHM as narrow as 10 cm(-1) are measured. Under excitation into the UV and visible spectral range, the europium doped ceria nanocrystals display a variable emission spanning the orange-red wavelengths. The tunable emission is explained by the heterogeneous distribution of the europium dopants within the ceria nanocrystals coupled with the progressive diffusion of the europium ions from the surface to the inner ceria sites and the selective participation of the ceria host to the emission sensitization. Effects of the bulk-doping and impregnation with europium on the ceria host structure and optical properties are also discussed.

Rolled-up nanostructures formed from lattice mismatched III-V heterojunction films by taking advantage of a strain-induced self-rolling mechanism represent a useful type of building blocks for nanotechnology, with possible applications in high-speed microelectronic and optoelectronic devices. This work investigated the effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up MBE grown InGaAs/GaAs bilayers. Based on this "etch suppression effect" (ESE), we propose an illumination-assisted technique that offers an advantage over other methods of rolling up nano-objects on a substrate from inherently strained films because it allows control over the positioning of rolled-up micro- and nanotubes independently from lithographic methods. For thicknesses of AlAs below 10 nm, we found two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at higher intensities in which the etching and any releasing are completely suppressed. The "etch suppression" area is well defined by the illumination spot, which can be used to realize well-controlled heterogeneously etched regions on the same sample.

The Pd-TPPTS complex (TPPTS - trisodium salt of 3,3',3 ''-phosphanetriyl benzenesulfonic acid) and PdCl42- salt heterogenised onto Zn2AlNO3 layered double hydroxide (LDH) using an ion-exchange procedure, have been shown to be efficient green catalysts in the cycloisomerisation reaction of acetylenic carboxylic acids to the corresponding 5-membered heterocycles.

ZnO:Co thin films are prepared by electrochemical deposition at different overpotentials and investigated by scanning electron microscopy, optical spectroscopy, and cathodoluminescence, X-ray photoelectron spectroscopy and Kerr magnetometry (MOKE). An increase of structural disorder and crystallite reorientation are observed for cobalt-doped samples. MOKE magnetometry revealed room-temperature ferromagnetic behavior only for ZnO: Co deposited at -850 mV. These are the samples with the lower cobalt content and lowest structural perturbation of the ZnO matrix by cobalt. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

A genuine GaAs surface was covered with a relatively thick layer (similar to nm) of native oxide pinning the surface Fermi level within the band gap of semiconductor. The method presented in this work is related to the sulphur passivation by treating n-GaAs in sulphide solutions (e.g. pure ammonium sulphide and sulphur monochloride) that combines both chemical and electronic passivation by reducing the surface state density. The presence of the covalent bonds As-S and Ga-S was putted into evidence by XPS analysis. It is presented the independence of XPS measurements on n-GaAs substrate orientation for (100) and (110) planes. At the surface of n-GaAs it is developed an adherent layer of sulphur compound as a result of chemical interaction of sulphur ions with n-GaAs surface.

A new analytical approximation of the diffraction peak size profile due to the lognormal distribution of spherical crystallites is derived. In comparison with the existing approximation constructed with the condition of conserving the volume-averaged column length of the exact profile [Popa & Balzar (2002). J. Appl. Cryst. 35, 338-346], the new approximation conserves both volume- and area-averaged column lengths. Moreover, it is a better approximation for large distribution dispersions. Like the old approximation, the present one is appropriate for implementation in the whole powder pattern fitting codes, Rietveld included.

Short time spark plasma sintering at 1200 degrees C for 10 min and under a uniaxial pressure of 95 MPa followed by annealing at 1100 degrees C for 5 h is proposed for synthesis of high density (99%) Ba(Ti0.87Sn0.13)O-3 ceramic. Starting powder of 450 nm was obtained by co-precipitation, while the average grain size in the sintered ceramic was of 580 nm. X-ray diffraction analysis of the as prepared Ba(Ti0.87Sn0.13)O-3 samples indicated the presence of single phase BaTi0.87Sn0.13O3 developed in the BaTiO3 cubic structure. Samples have high relative dielectric constant of 5680 and low dissipation factor (tan delta = 0.009) at Curie temperature of 57 degrees C and 1 kHz, good tunability and ferroelectric properties. Remarkable is that these results are from some points of view different than for the conventionally processed samples with similar stoichiometry. Some ideas in this regard are presented and this suggests that SPS can be useful for expanded possibilities in the control of the properties. (C) 2010 Elsevier B.V. All rights reserved.