National Institute Of Materials Physics - Romania

CdMnS ternary alloys have attracted much attention because they permit to tune the energy gap, the effective mass and the lattice constant by varying the concentration of the magnetic material. Growth and physical characterization of Cd1-xMnxS thin films, prepared in different conditions on glass and silicon substrates by thermal evaporation technique is presented. The starting powders, CdS and Mn, were mixed in a crucible in various molar ratios. The samples were characterized by XRD, AFM and XPS. The blue shift of band gap of thin films might be ascribed to the size effect of the small grains and to the fact that Cd was substituted by Mn in the CdS structure.

Gallium Arsenide (GaAs) has increasingly become an important compound-semiconductor material suited for high speed digital circuits, microwaves and detectors for high energy physics. For the fabrication of ohmic contacts on GaAs (semi-insulating- SI) wafers with characteristics as: Cr doped, (100) oriented, and p similar to 10(6)similar to 10(7) Omega cm, has been used alloyed contact Au-Ge. The ohmic film was deposited in a high vacuum chamber (10(-8) Torr), on a plasma etched surface of GaAs, followed by a rapid thermal annealing (RTA) at 450 degrees C in low vacuum. For the fabrication of the rectifying contact-respectively the Schottky diode structure, we have used the same GaAs substrates. The wafers were degreased in a standard cleaning procedure, followed by a chemical etching. The Au-Ti contact has been deposited by thermal evaporation in vacuum (10(-6) torr) followed by a RFA procedure at 300-320 degrees C. The carrier transport mechanisms through M/S interface are strongly influenced by the doping concentration in the semiconductor and temperature. There are presented the experimental I-V characteristics for selected samples in dark and illumination conditions. Schottky barriers height on Au-Ti/GaAs was 0.7325 V in accord with mean values on n and p type GaAs (0.5-0.8 V). The aim of this work is to fabricate a competitive X-ray detector.

X-ray Photoelectron Spectroscopy (XPS) was used to investigate the chemical state of ZrC coatings deposited by cathodic arc method. A chemistry model of the ZrC films has been proposed. It was pointed out that on the films surface a highly oxidized passive layer, containing also carbon and oxygen as contaminants, was formed. The film bulk was composed by a mixture of ZrC (the dominant phase), ZrO2 and free carbon.

Single layer TiAlN and alternate TiN/TiAlN multilayered hard coatings were deposited on Si, plain carbon steel and high-speed steel substrates by the cathodic are technique. Chemical composition, phase composition, texture, Vickers microhardness, adhesion, bilayer period, sliding friction coefficient and wear resistance were investigated by XPS, EDX and XRD analyses, microhardness measurements, scratch and tribological tests.

This work concerns the preparation and characterisation of homogeneous bulk Co2Mn (Si, Ge, Ga, Sn Sb0.8Sn0.2) to be used as targets for pulsed laser deposition of magnetic contacts for spintronic devices. The samples have been prepared by direct synthesis from elemental powders followed by vertical gradient freeze. Characterisation of their structural properties and compositional homogeneity was performed by X-ray diffraction and energy-dispersive X-ray spectroscopy combined with scanning electron microscopy. The results show one-phase for the Heusler alloys. The Curie temperatures of the samples have been measured by both thermogravimetric analysis and differential scanning calorimetry and are in a good agreement with the previously published values. The saturation magnetisation values are close to the values for single crystals. (C) 2004 Elsevier B.V. All rights reserved.

Nanostructured Ni/C-60 thin films, produced by co-evaporation of Ni and fullerene, have been investigated by both X-ray diffraction (XRD) and X-ray magnetic circular dichroism (XMCD). X-ray diffraction has shown the co-existence of diffraction specific peaks for the fullerene face-centered cubic crystal structure and diffraction peaks of Ni nanoparticles in the face-centered cubic structure, which are broadened by nanoparticule finite dimensions. Analysis of peak widths shows that the Ni nanocrystallite size ranges from 4.7 to 19.2 nm. The XMCD signals for a sample series, preparated on relatively low-temperature substrates during the co-evaporation, can be interpreted as having distinct contributions due to both bulk and surface Ni atoms. These two kind of atoms are antiferromagnetic coupled. The Ni atoms which are at the interface with the fullerite matrix show ail enhanced orbital magnetic moment, while the orbital magnetic moment of Ni atoms in the bulk has very low values, as it can be expected for a crystalline field with a cubic symmetry.

A surface characterization has been performed on n-type GaAs (Si: GaAs) samples by using X-ray photoelectron spectroscopy (XPS) technique in order to get information on the degree of surface contamination during the device processing steps. The GaAs samples were etched by "in situ" ion sputtering (Ar plasma) before and after carrying out the measurements. According to XPS measurements the native oxide layer on as-received surface contains As2O3, AS(2)O(5) and Ga2O3. Large amounts of C and O are also present at surface before plasma cleaning of surface: C-C bonds, chemisorbed oxygen atoms. The XPS spectra recorded on the surface sample sputtered with 5 keV Ar+ ions were analyzed using SDP subroutines program facilities. After the first sputtering step it was observed different shifts of the principal peaks of GaAs bonding and compounds together with a modification of the relative peak intensities. The C1s and O1s peak size decreased but remained still significant. The following sputtering steps lead to a drastically decrease of C and 0 peaks down to the noise level.

The electrical and transport properties of GaAs crystals such as resistivity (rho), mobility (mu) and carrier concentration (n) depend on the purity and defects of a particular crystal. These parameters are normally obtained by performing a simple Hall effect analysis in a bar configuration. The technical procedure is connected with the design of appropriate contacts for Hall bar configuration. In order to ensure good ohmic contacts oil GaAs, thin metal layers of Au-Ge-Ni have been deposited in high vacuum followed by heat treatment in low vacuum. Hall effect measurement is important for checking the quality of the GaAs wafers. We analyzed various GaAs wafers with (100) and (110), orientation obtained by LEC and HB methods. The resistivity of the wafers varied from low resistivity, n-type doped crystals (n = 10(18) cm(-3)), to high resistivity crystals (n = 10(14) cm(-3)). This paper presents the data of Hall characterization of wafers cut from GaAs crystals grown by different methods (LEC, HB).

Interface reaction and magnetism of epitaxially-grown Fe on InAs(100) are studied by core-level photoemission (As 3d and In 4d) and Fe 2p X-ray magnetic circular dichroism using synchrotron radiation. The reactivity of Fe/InAs(100) is relatively low compared to that of other interfaces involving deposition of 3d metals on III-V semiconductors. As a consequence, we observe a magnetic signal at Fe L-2,L-3 edges for the lowest thicknesses studied (1 ML). The atomic magnetic moment reaches a value close to that of the bulk alpha-Fe (2.2 mu(B)) for Fe coverages exceeding 5 ML. A ferromagnetic compound with approximate stoichiometry of FeAs is formed at the interface. The orbital magnetism represents between 12 and 20% of the total momentum, due to 3d density of states depletion and to crystal-field modification of the electronic levels. These properties make the Fe/InAs(100) interface very promising for spin-tunneling devices.

Ru-zeolites prepared via deposition of aqueous solution of ruthenium chloride on X, L, ZSM-5 and APO-54 were investigated. The impregnated solids were characterized by the following techniques: N-2 sorption, H-2 chemisorption, TPR, XRD, XPS, EXAFS and Mossbauer spectroscopy. It was found that deposition of Ru is influenced by the pore structure and the chemical composition of the supports, in particular the concentration and strength of the protonic sites, with the formation of the different species. The packing of Ru as well as the degree of the reduction and the metal particle size are different according to the penetration depth of the metal and the nature of the zeolite. The amount of chlorine possibly remaining as adatoms of Ru is very low or inexistent. In calcined and reduced catalysts no chloride peak could be evidenced by XPS. The experiments confirmed that the use of large amounts of Ru chloride precursor leads to rather large metal particles. (C) 1999 Elsevier Science B.V. All rights reserved.