National Institute Of Materials Physics - Romania

In this work, the effects of 60Co y -ray irradiation on high resistivity p -type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and 2 MGy. Both macroscopic (I-V, C-V) and microscopic investigations, by means of Thermally Stimulated Current (TSC) and Deep Level Transient Spectroscopy (DLTS) techniques, were conducted to characterize the radiation -induced changes. The investigated diodes were manufactured on high resistivity p -type Float Zone (FZ) silicon and were further classified into two types based on the isolation technique between the pad and guard ring: p -stop and p -spray. After irradiation, the macroscopic results of current-voltage and capacitance-voltage measurements were obtained and compared with existing literature data. Additionally, the microscopic measurements focused on the development of the concentration of different radiation -induced defects, including the Boron interstitial -Oxygen interstitial (BiOi) complex, the Carbon interstitial -Oxygen interstitial (CiOi) defect, the H40K, and the so-called I*P. To investigate the thermal stability of induced defects in the bulk, isochronal annealing studies were performed in the temperature range of 100 degrees C to 300 degrees C. These annealing processes were carried out on diodes irradiated with doses of 1 and 2 MGy. Furthermore, in order to investigate the unexpected results observed in the C-V measurements after irradiation with high dose values, the surface conductance between the pad and guard ring was measured as a function of both dose and annealing temperature.

In the quest for advanced materials suitable for next-generation electronic and optoelectronic applications, tungsten disulfide (WS2) ultrathin films have emerged as promising candidates due to their unique properties. However, obtaining WS2 directly on the desired substrate, eliminating the need for transfer, which produces additional defects, poses many challenges. This paper aims to explore the synthesis of WS2 ultrathin films via physical vapor deposition (PVD) followed by sulfurization in a confined space, addressing the challenge of film formation for practical applications. Precursor layers of tungsten and WS2 were deposited by RF magnetron sputtering. Subsequent sulfurization treatments were conducted in a small, closed, graphite box to produce WS2 films. The physical and chemical properties of these precursor and sulfurized layers were thoroughly characterized using techniques such as X-ray reflectometry (XRR), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). The findings reveal notable distinctions in film thickness, structural orientation, and chemical composition, attributable to the different precursor used. Particularly, the sulfurized layers from the tungsten precursor exhibited a preferred orientation of WS2 crystallites with their (00L) planes parallel to the substrate surface, along with a deviation from parallelism in a small angular range. This study highlights the necessity of precise control over deposition and sulfurization parameters to tailor the properties of WS2 films for specific technological applications.

The corrosion protection property of three Brij-type surfactants, namely, Brij 35, Brij 56 and Brij 58P, was considered on OLC 45 carbon steel in a 0.5 M H2SO4 medium. The efficacy for these organic compounds was examined using potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) methods, scanning electron microscopy (SEM) procedures, and Fourier transform infrared (FT-IR) spectroscopy. We hypothesized that these surfactants hinder the corrosion for OLC 45 samples through a protecting mechanism owing to the adsorption of organic molecules that form an inhibitive film or through the formation of complex oxides. These surfactants exhibited an appreciable protective effect against OLC 45 corrosion, operating as mixed inhibitors, as could be demonstrated by their influence on the electrochemical characteristics of the metallic substrates. The adsorption of surfactants over the substrates zone conformed to the representation of the Langmuir isotherm. The effect of temperature on the electrochemical comportment of the OLC 45 specimens in H2SO4 without and with Brij at 800 ppm was examined in the temperature interval of 293 to 333 K. The negative estimate of thermodynamic attributed as Gibbs free energy of adsorption presented the spontaneity of the adsorption activity. The investigation with FT-IR and SEM established the adsorption of Brij and the constitution of the corrosive components on the OLC 45 surface. Electrochemical determinations of these surfactants indicated its anticorrosion inhibition performance and the highest inhibition of 96% was reached when the Brij 35 concentration was at 800 or 1000 ppm, while for Brij 56 and Brij 58P, the highest inhibition was obtained when their concentrations were 500, 800, or 1000 ppm.

Selective growth of 2D MoS2 layers on patterned substrates is highly desired for easy fabrication of devices. Selectively grown 2D MoS2 on Mo patterned substrates for the formation of intimate metallic contact was obtained by a Mo-CVD method in which MoO2 from an oxidized Mo pattern and S powder are the growth precursors. Mo films were deposited by magnetron sputtering on SiO2(300 nm)/c-Si substrates and patterned by photolithography techniques for obtaining Mo strips and finger contact structures, with the gap between the strips and finger varied from 5 to 20 mu m. The filling of the gap by selectively grown atomically thin MoS2 plates of 1-2 monolayers (MLs) was demonstrated by scanning electron microscopy and atomic force microscopy imaging. Field effect devices for the characterization of the photosensitivity of selectively grown MoS2 have been fabricated from finger contact structures. The dark current is drastically reduced from 10(-9) to 10(-13)-10(-14) A by varying the gate voltage from +7 to -7 V, showing the n-type semiconductor behavior of the selectively grown 2D MoS2. High photosensitivity of 10(5) (%) was obtained for 4.5 x 10(-4) mW/cm(2) at 650 nm wavelength illumination. The spectral responsivity reaches values of 15-25 A/W at 600 nm wavelength and shows an energy onset of 1.72-1.77 eV corresponding to about 2 ML MoS2. The carrier-trapping effect responsible for the slow part of the device response can be caused by structural defects and also by adsorbed molecules like in gas sensors.

Bioactive glasses (BGs) are known for their selective ability to (i) form a mechanically strong interfacial bond with hard (bone) or soft tissues (gingivae or cartilages) (i.e., silica-, silica-phosphate-, phosphate-, boratephosphate-, or silica-phosphate-borate-based BGs); or (ii) serve as reservoirs for fast-release of therapeutic (osteogenic, angiogenic, anticarcinogenic, or antimicrobial) ions (i.e., phosphate-based BGs and mesoporous BGs). The strength of the bone bond yielded by the osteoproductive-capable BGs is generally equivalent to, or higher than the bone strength. The resorbability of phosphate-based BG is dependent on the content of network formers and cross-linkers. All BGs elicit excellent biochemical compatibility. However, their fracture toughness is typically less than and the elastic modulus is greater than those of bone, indicating that most BGs have suboptimal biomechanical compatibility when used in load-bearing applications. One promising approach to overcome this problem is the development of BGs in coating form, applied to the surface of load-bearing endosseous implants. This work critically assesses BG thin-layers fabricated by the radio-frequency magnetron sputtering method, an industry-ready large-scale physical vapour deposition technology. It is demonstrated that, despite the relative lack of attention paid to this technology, it enables the development of unique BG coatings with efficacious therapeutic capabilities. Here, we present an overview of the most relevant developments achieved thus far, along with the remarkable advantages, drawbacks to overcome, and future perspectives with the intention of highlighting the vast possibilities of this specific field of research.

In this work, electrochemical deposition techniques (galvanostatic and potentiostatic) were used to obtain coatings of a new composite polymer, 3-methylpyrrole-sodium dodecyl sulfate/poly 2-methythiophene (P3MPY-SDS/P2MT), on cobalt-based alloy samples for anti-corrosion safety. The use of sodium dodecyl sulfate as a dopant ion in electrosynthesis can have a relevant effect on the anticorrosive property of the composite polymer layer by blocking the entry of corrosive ions. The cobalt alloy specimen had an important impact on the electrochemical performance of the composite coating and this together with the presence of the polymeric layer was achieved by simultaneously constitution of a complex oxides film and polymeric layers. The polymeric coatings were analyzed using scanning electron microscopy (SEM), Fourier transform infrared (FT-IR) spectroscopy, and cyclic voltammetry (CV) methods. The corrosion protection of the P3MPY-SDS/P2MT-covered cobalt-based alloy was explored using electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization procedures in a 1 M HCl solution. The corrosion speed of the P3MPY-SDS/P2MT-covered cobalt-based alloy was observed to be similar to 10 times less than an uncovered specimen, and the effectiveness of the composite layers of this coating is greater than 91%. This superior efficaciousness was obtained by the electropolymerization of P3MPY-SDS/P2MT at current densities of 1 mA/cm(2) and 0.5 mA/cm(2), applied potentials of 0.9 V and 1.0 V, and a molar ratio of 5:1. Corrosion test results indicate that the P3MPY-SDS/P2MT coatings provide a good result: protection against the corrosion of a cobalt-based alloy in aggressive solutions.

Undoped and Sm3+doped 45P2O5-45Na2O-2Al2O3-8BaO glasses were synthesized by the melt-quenching technique. The glass structure and luminescence properties were investigated by using Raman spectroscopy, scanning electron microscopy (SEM), spectroscopic ellipsometry, Judd-Ofelt theory and photoluminescence. Electron microscopy showed the homogeneity of samples. Raman spectroscopy revealed that the overall struc-ture of the glass was unaffected by the doping of Sm3+ and ellipsometry was used to measure the optical constants. Judd-Ofelt (JO) analysis was performed on the absorption bands of Sm3+ (4f5) and the three phenomenological parameters (omega 2, omega 4, and omega 6) were computed and then used to determine radiative properties such as the radiative transition probability (Ar), the fluorescent branching ratio (beta r), the stimulated emission cross-section (sigma e) and the radiative lifetime (tau rad). Photoluminescence (PL) spectrum showed the typical four transitions of Sm3+ at wavelengths of 564, 600, 645 and 703 nm corresponding to 4G5/2 -> 6H5/2, 6H7/2, 6H9/2 and 6H11/2, respectively. The spectroscopic quality factors omega 4/omega 6, the predicted lifetime (tau rad) calculated using the JO method and the experimentally lifetime (tau exp) for the 4G5/2level were calculated and discussed. The glass color purity is as high as 98%, which makes it a potential candidate for laser emission.

Among various "families" of iron-based superconductors, the quite recently discovered AeAFe(4)As(4) (where Ae is an alkali-earth metal and A is an alkali metal) has high critical current density, a very high upper critical field, and a low anisotropy, and has recently received much interest for the possibility of high magnetic field applications at the liquid hydrogen temperature. We have performed DC magnetization relaxation and frequency-dependent AC susceptibility measurements on high-quality single crystals of CaKFe4As4 with the aim of determining the pinning potential U*. The temperature dependence of U* displays a clear crossover between elastic creep and plastic creep. At temperatures around 27-28 K, U* has a very high value, up to 1200 K, resulting in an infinitesimally small probability of thermally activated flux jumps. From the dependence of the normalized pinning potential on irreversible magnetization, we have determined the creep exponents in the two creep regimes, which are in complete agreement with theoretical models. The estimation of the pinning potential from multifrequency AC susceptibility measurements was possible only near the critical temperature due to equipment limitations, and the resulting value is very close to the one that resulted from the magnetization relaxation data. Magnetic hysteresis loops revealed a second magnetization peak and very high values of the critical current density.

Cu2ZnSnSe4 thin films have been synthesized by employing two magnetron-sputtering depositions, interlaced with two sequential post-deposition heat treatments in low vacuum, Sn+Se and Se-rich atmospheres at 550 degrees C. By employing successive structural analysis methods, namely Grazing Incidence X-Ray Diffraction (GIXRD) and Raman Spectroscopy, secondary phases such as ZnSe coexisting with the main kesterite phase have been identified. SEM peered into the surface morphology of the samples, detecting structural defects and grain profiles, while EDS experiments showed off-stoichiometric elemental composition. The optical bandgaps in our samples were calculated by a widely used extrapolation method from recorded transmission spectra, holding values from 1.42 to 2.01 eV. Understanding the processes behind the appearance of secondary phases and occurring structural defects accompanied by finding ways to mitigate their impact on the solar cells' properties is the prime goal of the research beforehand.

One of the new materials for next-generation thin film solar cells is Cu2ZnSnSe4 (CZTSe). However, achieving a single-phase CZTSe compound remains a challenge. This study describes the development of Cu2ZnSnSe4 thin films through the sequential deposition of stacked films of non-stoichiometric Cu2SnSe3 (CTSe) and ZnSe by magnetron sputtering. The structural, morphological, and electrical properties as well as the surface chemistry of the films were investigated and compared depending on the growth sequence of the thin films. By using Raman spectroscopy and grazing incidence X-ray diffraction, the tetragonal CZTSe structure was confirmed. Scanning electron microscopy and energy-dispersive spectroscopy measurements of the morphological and compositional properties indicated large grains and dense surfaces with an elemental composition close to the desired stoichiometry in SLG\SnSe2\Cu\ZnSe and SLG\SnSe2\Cu2Se\ZnSe stacks. To ascertain the surface chemistry and unique characteristics of the produced films, additional X-ray photoemission spectroscopy experiments were carried out. The optimal band gap values for the absorber layers were found using conventional spectroscopy, and they ranged from 0.88 to 1.47 eV. According to the electrical measurements, all the films were p-type and have high carrier concentrations between 1016 and 1020 cm-3. Our findings demonstrate that employing a sequential deposition approach and annealing in different atmospheres can yield CZTSe absorber layers with desirable properties, overcoming the challenge of non-stoichiometric CTSe precursors.