National Institute Of Materials Physics - Romania

Publications

articles found
4141. Methods for preparation of BaTiO3 thin films
Authors: Cernea, M

Published: DEC 2004, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 6, 1356, DOI:

4142. Structural and magnetic investigations of nickel clusters in C-60 matrices
Authors: Teodorescu, CM; Macovei, D; Lungu, A

Published: DEC 2004, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 6, 1285, DOI:

4143. Size-strain line-broadening analysis of the ceria round-robin sample
Authors: Balzar, D; Audebrand, N; Daymond, MR; Fitch, A; Hewat, A; Langford, JI; Le Bail, A; Louer, D; Masson, O; McCowan, CN; Popa, NC; Stephens, PW; Toby, BH

Published: DEC 2004, JOURNAL OF APPLIED CRYSTALLOGRAPHY, 37, 924, DOI: 10.1107/S0021889804022551

4144. The closed cluster model and the charged coordination defects in chalcogenide glasses
Authors: Popescu, M

Published: DEC 2004, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 6, 1152, DOI:

4145. Local modes of Fe and Co atoms in NiAl intermetallics
Authors: Parlinski, K; Jochym, PT; Leupold, O; Chumakov, AI; Ruffer, R; Schober, H; Jianu, A; Dutkiewicz, J; Maziarz, W

Published: DEC 2004, PHYSICAL REVIEW B, 70, DOI: 10.1103/PhysRevB.70.224304

4146. Magnetization measurements on Li2Pd3B superconductor
Authors: Badica, P; Kondo, T; Kudo, T; Nakamori, Y; Orimo, S; Togano, K

Published: NOV 8 2004, APPLIED PHYSICS LETTERS, 85, 4435, DOI: 10.1063/1.1814433

4147. Growth of high-quality precipitate free thin films suitable for electronic devices: A new concept for substrates
Authors: Endo, K; Badica, P; Sato, H; Akoh, H

Published: NOV 4 2004, ADVANCED MATERIALS, 16, +, DOI: 10.1002/adma.200400750

4148. Deposition of hydroxyapatite thin films by Nd : YAG laser ablation: a microstructural study
Authors: Nistor, LC; Ghica, C; Teodorescu, VS; Nistor, SV; Dinescu, M; Matei, D; Frangis, N; Vouroutzis, N; Liutas, C

Published: NOV 2 2004, MATERIALS RESEARCH BULLETIN, 39, 2101, DOI: 10.1016/j.materresbull.2004.07.006

4149. Anomalous current transients related to defect discharge in irradiated silicon diodes
Authors: Menichelli, D; Scaringella, M; Bruzzi, M; Pintilie, I; Fretwurst, E

Published: NOV 2004, PHYSICAL REVIEW B, 70, DOI: 10.1103/PhysRevB.70.195209

4150. Coulomb effects in semiconductor quantum dots
Authors: Baer, N; Gartner, P; Jahnke, F

Published: NOV 2004, EUROPEAN PHYSICAL JOURNAL B, 42, 237, DOI: 10.1140/epjb/e2004-00375-6



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