National Institute Of Materials Physics - Romania
Publications
4241. The role of non-collinear spins on the magnetic properties of uncoupled nanometer-size particles
Published: JAN 1 2005, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 285, 209, DOI: 10.1016/j.jmmm.2004.07.042
4242. Recoilless fraction of tin-doped hematite nanoparticles obtained by hydrothermal synthesis
Published: JAN 2005, MATERIALS LETTERS, 59, 25, DOI: 10.1016/j.matlet.2004.09.009
4243. X-ray diffraction and magnetic measurements of itinerant electron magnetism in the Y3Ni13-xCoxB2 system
Published: JAN 2005, PHYSICAL REVIEW B, 71, DOI: 10.1103/PhysRevB.71.024433
4244. Photostimulable defects in nano-crystallites in fluorozirconate glasses
Published: JAN 2005, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 202, 249, DOI: 10.1002/pssa.200460220
4245. Functionalization of single-walled carbon nanotubes with conducting polymers evidenced by Raman and FTIR spectroscopy
Published: MAR-JUL 2005, DIAMOND AND RELATED MATERIALS, 14, 872, DOI: 10.1016/j.diamond.2004.11.035
4246. Effect of iron and nickel substitution on the piezoelectric properties of PZT type ceramics
Published: 2005, JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 25, 2400, DOI: 10.1016/j.jeurceramsoc.2005.03.069
4247. Magnetic properties of nanostructured materials - Monte Carlo simulation and experimental approach for nanocrystalline alloys and core-shell nanoparticles
Published: 2005, PROPERTIES AND APPLICATIONS OF NANOCRYSTALLINE ALLOYS FROM AMORPHOUS PRECURSORS, 184, 266, DOI:
4248. Effect of hydrogenation on defect reactions in silicon particle detectors
Published: 2005, GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 108-109, 222, DOI: 10.4028/www.scientific.net/SSP.108-109.217
4249. Effect of laser process parameters on the surface abosorbtivity
Published: 2005, CROSS-DISCIPLINARY APPLIED RESEARCH IN MATERIALS SCIENCE AND TECHNOLOGY, 480, 211, DOI: 10.4028/www.scientific.net/MSF.480-481.207
4250. Piezoelectric properties of bismuth modified lead titanate ceramics
Published: 2005, CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE, 1-2, 274, DOI:
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