National Institute Of Materials Physics - Romania
Publications
4281. Preparation and characterization of Ce-doped BaTiO3 thin films by pulsed laser deposition
Published: APR 15 2004, JOURNAL OF MATERIALS SCIENCE, 39, 2759, DOI: 10.1023/B:JMSC.0000021450.39778.81
4282. Quantitative determination of the volume fraction of intergranular amorphous phase in sintered silicon nitride
Published: APR 15 2004, MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 370, 458, DOI: 10.1016/j.msea.2003.05.004
4283. On the optical properties of micro- and nanometric size PbI2 particles
Published: APR 7 2004, JOURNAL OF PHYSICS-CONDENSED MATTER, 16, 2356, DOI: 10.1088/0953-8984/16/13/014
4284. Pulsed laser deposition of biocompatible polymers: a comparative study in case of pullulan
Published: APR 1 2004, THIN SOLID FILMS, 453, 268, DOI: 10.1016/j.tsf.2003.11.145
4285. Anomalies of AC susceptibility losses in the doped [Bi(Pb)](2)Sr2Ca2CU3Ox superconductor
Published: APR 2004, SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 17, 730, DOI: 10.1088/0953-2048/17/4/030
4286. The first specimen of tetranuclear (Fe-III, Ln(III)) clusters assembled by carboxylate ligands: synthesis, structure, Mossbauer spectra, and magnetic properties of [Fe3EuO2(CCl3COO)(8)H2O(THF)(3)]center dot THF
Published: APR 2004, INORGANIC CHEMISTRY COMMUNICATIONS, 7, 579, DOI: 10.1016/j.inoche.2004.02.025
4287. Chemical growth of calcium phosphate layers on magnetron sputtered HA films
Published: MAR 15 2004, JOURNAL OF CRYSTAL GROWTH, 264, 491, DOI: 10.1016/j.jcrysgro.2004.01.015
4288. Mossbauer study of the RENiSnD (RE : Pr, Nd) monodeuterides
Published: MAR 10 2004, JOURNAL OF ALLOYS AND COMPOUNDS, 366, 85, DOI: 10.1016/S0925-8388(03)00744-8
4289. Carbon material deposition by remote RF plasma beam
Published: MAR 1 2004, SURFACE & COATINGS TECHNOLOGY, 180, 243, DOI: 10.1016/j.surfcoat.2003.10.147
4290. Amorphous thin films based on paraffin doped chalcogenides, prepared by pulsed laser deposition
Published: MAR 2004, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 6, 167, DOI:
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