National Institute Of Materials Physics - Romania

Nanoscale Condensed Matter Laboratory

Publications

articles found
21. Nitrogen-doped graphene as metal free basic catalyst for coupling reactions
Authors: Candu, N; Man, I; Simion, A; Cojocaru, B; Coman, SM; Bucur, C; Primo, A; Garcia, H; Parvulescu, VI

Published: AUG 2019, DOI: 10.1016/j.jcat.2019.07.011

Abstract: N-doped defective graphene [(N)G] obtained by pyrolysis at 900 degrees C of chitosan contains about 3.7% of residual N atoms, distributed as pyridinic, pyrrolic and graphitic N atoms. It has been found that (N)G acts as basic catalyst promoting two classical C-C bond forming nucleophilic additions in organic chemistry, such as the Michael and the Henry additions. Computational calculations at DFT level of models corresponding to the various N atoms leads to the conclusion that N atoms are more stable at the periphery of the graphene sheets and that H adsorption on these sites is a suitable descriptor to correlate with the catalytic activity of the various sites. According to these calculations the most active sites are pyridinic N atoms at zig-zag edges of the sheets. In addition, N as dopant changes the reactivity of the neigh. bour C atoms. Water was found a suitable solvent to achieve high conversions in both reactions. In this solvent the initial distribution of N atoms is affected due to the easy protonation of the N-py to N-pyH sites. As an effect, C edge sites adjacent at N-PyH with an appropriate reactivity towards the alpha-C-H bond breaking are formed. The present results show the general activity of N-doped graphene as base catalysts and illustrate the potential of carbocatalysis to promote reactions of general interest in organic synthesis. (C) 2019 Elsevier Inc. All rights reserved.
22. Generalized Master Equation Approach to Time-Dependent Many-Body Transport
Authors: Moldoveanu, V; Manolescu, A; Gudmundsson, V

Published: AUG 2019, DOI: 10.3390/e21080731

Abstract: We recall theoretical studies on transient transport through interacting mesoscopic systems. It is shown that a generalized master equation (GME) written and solved in terms of many-body states provides the suitable formal framework to capture both the effects of the Coulomb interaction and electron-photon coupling due to a surrounding single-mode cavity. We outline the derivation of this equation within the Nakajima-Zwanzig formalism and point out technical problems related to its numerical implementation for more realistic systems which can neither be described by non-interacting two-level models nor by a steady-state Markov-Lindblad equation. We first solve the GME for a lattice model and discuss the dynamics of many-body states in a two-dimensional nanowire, the dynamical onset of the current-current correlations in electrostatically coupled parallel quantum dots and transient thermoelectric properties. Secondly, we rely on a continuous model to get the Rabi oscillations of the photocurrent through a double-dot etched in a nanowire and embedded in a quantum cavity. A many-body Markovian version of the GME for cavity-coupled systems is also presented.
23. Physical properties of the ferroelectric capacitors based on Al-doped HfO2 grown via Atomic Layer Deposition on Si
Authors: Vulpe, S; Nastase, F; Dragoman, M; Dinescu, A; Romanitan, C; Iftimie, S; Moldovan, A; Apostol, N

Published: JUL 31 2019, DOI: 10.1016/j.apsusc.2019.03.166

Abstract: Ferroelectric capacitors based on aluminium (Al) doped hafnium oxide (HfO2) thin films grown on silicon substrates were fabricated by Atomic Layer Deposition (ALD), taking into account two methods. The first one involved the growth of a binary oxide, in a laminar way, by alternating the ALD cycles of HfO2 and Al2O3, and the second, the two precursors were sequentially mixed on the surface. The composition and structure of deposited aluminium doped hafnium oxide (Al: HfO2) thin films have been studied using X-ray photoelectron spectroscopy (XPS) and grazing incidence X-ray diffraction (GIXRD). XPS measurements show the formation of opposite ferroelectric polarization areas. Via GIXRD, it was found that the Al: HfO2 films deposited on Si have a structure with polycrystalline domains. Recording and investigation of ferroelectric domains were performed by Piezoresponse Force Microscopy (PFM), while the electrical performances of obtained devices were analysed by capacitance-voltage (C-V) and current-voltage (I-V) characteristics. The PFM measurements show there is a mechanical non-zero response even outside the written area and for an appropriate value of the electrical stress the difference in phase between successive areas is saturated to a value close to 180 degrees. The atomic force microscopy (AFM) analyses indicate a very low value of roughness average, for all grown thin films, similar to 0.2 nm, for a thickness of similar to 7 nm. From C-V characteristics, the memory window was extracted and the calculated values were found to be 0.8 V for the device obtained by the first ALD method, and 0.44 V for the second one, respectively. Moreover, in the case of the device based on the ferroelectric layer grown by the second ALD method, the memory window extends over a much wider applied voltage domain, in the range (+/- 4 V; +/- 8 V), at a signal of 100 kHz.
24. Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering
Authors: Prepelita, P; Stavarache, I; Craciun, D; Garoi, F; Negrila, C; Sbarcea, BG; Craciun, V

Published: JUL 25 2019, DOI: 10.3762/bjnano.10.149

Abstract: In this work, rapid thermal annealing (RTA) was applied to indium tin oxide (ITO) films in ambient atmosphere, resulting in significant improvements of the quality of the ITO films that are commonly used as conductive transparent electrodes for photovoltaic structures. Starting from a single sintered target (purity 99.95%), ITO thin films of predefined thickness (230 nm, 300 nm and 370 nm) were deposited at room temperature by radio-frequency magnetron sputtering (rfMS). After deposition, the films were subjected to a RTA process at 575 degrees C (heating rate 20 degrees C/s), maintained at this temperature for 10 minutes, then cooled down to room temperature at a rate of 20 degrees C/s. The film structure was modified by changing the deposition thickness or the RTA process. X-ray diffraction investigations revealed a cubic nanocrystalline structure for the as-deposited ITO films. After RTA, polycrystalline compounds with a textured (222) plane were observed. X-ray photon spectroscopy was used to confirm the beneficial effect of the RTA treatment on the ITO chemical composition. Using a Tauc plot, values of the optical band gap ranging from 3.17 to 3.67 eV were estimated. These values depend on the heat treatment and the thickness of the sample. Highly conductive indium tin oxide thin films (rho = 7.4 x 10(-5) Omega cm) were obtained after RTA treatment in an open atmosphere. Such films could be used to manufacture transparent contact electrodes for solar cells.
25. Ge nanoparticles in SiO2 for near infrared photodetectors with high performance
Authors: Stavarache, I; Teodorescu, VS; Prepelita, P; Logofatu, C; Ciurea, ML

Published: JUL 16 2019, DOI: 10.1038/s41598-019-46711-w

Abstract: In this work we prepared films of amorphous germanium nanoparticles embedded in SiO2 deposited by magnetron sputtering on Si and quartz heated substrates at 300, 400 and 500 degrees C. Structure, morphology, optical, electrical and photoconduction properties of all films were investigated. The Ge concentration in the depth of the films is strongly dependent on the deposition temperature. In the films deposited at 300 degrees C, the Ge content is constant in the depth, while films deposited at 500 degrees C show a significant decrease of Ge content from interface of the film with substrate towards the film free surface. From the absorption curves we obtained the Ge band gap of 1.39 eV for 300 degrees C deposited films and 1.44 eV for the films deposited at 500 degrees C. The photocurrents are higher with more than one order of magnitude than the dark ones. The photocurrent spectra present different cutoff wavelengths depending on the deposition temperature, i.e. 1325 nm for 300 degrees C and 1267 nm for 500 degrees C. These films present good responsivities of 2.42 AW(-1) (52 mu W incident power) at 300 degrees C and 0.69 AW(-1) (57 mW) at 500 degrees C and high internal quantum efficiency of similar to 445% for 300 degrees C and similar to 118% for 500 degrees C.
26. A Dyson Equation for Non-Equilibrium Green's Functions in the Partition-Free Setting
Authors: Cornean, HD; Moldoveanu, V; Pillet, CA

Published: JUL 2019, DOI: 10.1002/pssb.201800447

Abstract: Here a small interacting sample, coupled to several non-interacting leads is considered. Initially, the system is at thermal equilibrium. At some instant t(0) the system is set into the so-called partition-free transport scenario by turning on a bias on the leads. Using the theory of Volterra operators we rigorously formulate a Dyson equation for the retarded Green's function and we establish a closed formula for the associated proper interaction self-energy.
27. Impact on Ferroelectricity and Band Alignment of Gradually Grown Au on BaTiO3
Authors: Popescu, DG; Husanu, MA; Chirila, C; Pintilie, L; Teodorescu, CM

Published: JUL 2019, DOI: 10.1002/pssr.201900077

Abstract: The competition between interface barrier in the Schottky-Mott limit and polarization driven mechanism is established during gradual formation of metal (Au) - ferroelectric (BaTiO3) interface. X-ray photoelectron spectroscopy provides core level energies and valence band positions in the contact region, to monitor the band alignment from the very first stages of metal deposition on BaTiO3. The band bending at metal/ferroelectric (FE) interface is extracted from the shift of core levels (Ba 3d, Ti 2p) as a function of the metal thickness. It is shown that the interface band alignment mechanism involves a well-defined polarization orientation washing out the bending expected from the work function difference. The sudden modification of the binding energies within ferroelectric at the first 2 angstrom Au indicates that the ferroelectric compensation mechanism triggered by the metal overlayer initiates already at ultrathin top layer, while subsequent growth contributes only at a gradual correction of the potential in the FE. The emerging picture is confirmed in first-principle calculation indicating the preferences of Au to grow preferentially to different terminated regions and to stabilize distinct ferroelectric polarization.
28. Effect of dilute doping and non-equilibrium synthesis on the structural, luminescent and magnetic properties of nanocrystalline Zn1-xNixO (x=0.0025-0.03)
Authors: Mihalache, V; Negrila, C; Bercu, V; Secu, M; Vasile, E; Stan, GE

Published: JUL 2019, DOI: 10.1016/j.materresbull.2019.03.001

Abstract: We report on the influence of dilute doping combined with the processing conditions on the morphological, structural, chemical states, photoluminescence and magnetic properties of Zn1-xNixO nanopowders. Ni doping changes the ZnO powder morphology from randomly-aggregated nanocrystals to densely-packed nanocrystals arranged in columnar particles, modifies the high-energy-component of O1 s spectrum and increases the modified Auger parameter in XPS, enhances the blue photoluminescence (PL) emission, suppresses the green PL emission and the intensity of the g = 1.997 EPR signal. Ni-ZnO nanostructures show room-temperature ferro-magnetism (implying they can serve as dilute magnetic semiconductors). The saturation magnetization, crystallite size and microstrain increase with the doping level; the c-axis constant and unit cell volume decrease, however, being unexpectedly higher with respect to a (reference) ZnO powder with a relaxed lattice. We demonstrate that the investigated properties were controlled by both (dilute) doping level and donor native defects produced by non-equilibrium (oxygen-deficiency and high rate of) ZnO formation.
29. Gd3+ co-doping influence on the morphological, up-conversion luminescence and magnetic properties of LiYF4:Yb3+/Er3+ nanocrystals
Authors: Secu, CE; Bartha, C; Matei, E; Negrila, C; Crisan, A; Secu, M

Published: JUL 2019, DOI: 10.1016/j.jpcs.2019.03.003

Abstract: The influence of the Gd3+ co-dopant on the structure, morphology and up-conversion luminescence/magnetic properties of the LiYF4:Gd3+/Yb3+/Er3+ nanocrystals was investigated and compared to those of Gd-free samples. Electron microscopy has indicated an inhibiting effect of the agglomeration and collapsing process of the nanocrystals compared to the Gd-free powder samples. The surface analysis of nanocrystals have not shown oxygen-metal bonds related to the metal oxidation within the surface nanometric layer. The paramagnetic properties are related to the magnetic moment of the Gd3+ ions. The up-conversion luminescence of the LiYF4:Gd3+/Yb3+/Er3+ nanocrystals is about six times stronger than in LiYF4:Yb3+/Er3+ nanocrystals; the enhancement effect is most probably due to the lattice distortion induced by the Gd co-doping.
30. The influence of the nanocrystals size and surface on the Yb/Er doped LaF3 luminescence properties
Authors: Secu, CE; Matei, E; Negrila, C; Secu, M

Published: JUN 30 2019, DOI: 10.1016/j.jallcom.2019.03.267

Abstract: Up-conversion luminescence and thermoluminescence properties of LaF3 nanocrystals, with sizes of about 20 nm, were studied and discussed in relation to -size and surface related effects. XPS spectra have evidenced the presence of oxidized Er and La ions within a thin layer (of about 1 nm thickness) at the nanocrystals surface, as well as Yb ions bonded with fluorine ions. The green ((H-2(11/2), S-4(3/2)) -> I-4(15/2)) and red (F-4(9/2) -> I-4(15/2)) up-conversion emissions of Er3+ ions are influenced by the relative dominance of Erions that reside within the thin oxidized layer. The broad thermoluminescence curves are assigned to the recombination of trap defects associated with surface states and within the oxidized surface layer. (C) 2019 Elsevier B.V. All rights reserved.

Back to top

Copyright © 2021 National Institute of Materials Physics. All Rights Reserved