NIMP| New Chalcogenide Nanostructures for Information and Communication Technology

New Chalcogenide Nanostructures for Information and Communication Technology

Project Director: Dr. Mihail SECU

Project ID: no. 20 from 01/08/2018, (code: PN-III-P3-3.1-PM-RO-CN-2018-0076)

Scientific field: Information technology and coomunications

Project manager: Dr. Mihail Secu

Project type: bilateral cooperation between Romania and People Republic of China

Programul de incadrare al proiectului: P3 - Cooperare europeană și internațională

Financing source: Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii – UEFISCDI

Time period: August 2018 to Decemceber 2019

Project abstract:

Nonvolatile memory (NVM) technologies, such as resistive random access memory (RRAM), are at the center of data revolution. Conductive bridging memory cell (CBRAM) technology is an attractive emerging memory technology that offers simple integration and scalable operational conditions. These unique features make CBRAM technology an ideal candidate for embedded applications. The CBRAM cells rely on the formation of a conductive filament in a solid electrolyte or its rupture due to an applied bias voltage. An oxidizable electrode such as silver or copper provides a source of metal ions that form conductive filaments in an insulating electrolyte (chalcogenide glass). We propose here a systematic exploration of metal diffusion in chalcogenide glasses in order to understand the switching mechanism and improve the memory cells. Several techniques such as X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, absorption spectroscopy and spectroscopic ellipsometry will be used to investigate the diffusion dynamics in different chalcogenide thin films. Finally, memory cells using the most promising materials will be built and fully characterized.

Partners:

National Institute for Materials Physics (NIMP) Magurele-Bucharest, ROMANIA
Key Lab of In-fibre Integrated Optics, Harbin Engineering University, CHINA

Project objective:

In this project, we will systematically study the diffusion of different metals in several switching materials, then build and characterize CBRAM memory cells based on the best found switching materials.

Estimated results: Synthesis and charactersisation of the chalcogenmide thin films and of the memory cells functionality.The results of the project will be emphasised by their dissemination to international congresses or conferences, and by publishing in ISI journals with impact.

Potential future international collaborations;

EU and China reaffirm the importance of cooperation in the area of research and innovation as a driver for economic and social development PN-III-CEI-BIM-CN 7 and a key element of EU-China relations. European Union has the ambition of raising the level and intensity of research and innovation relations with China and launching new joint research and innovation initiatives. As a member of the EU Romania is interested for participation and a deeper collaboration within these new initiatives and the present project is the first step towards this goal.

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