Project goal is fabrication of nonvolatile memory (NVM) device, with 1-3 floating gates (FGs) of GeSn nanocrystals (NCs), controlled by electric field and illumination. GeSn NCs FG is a novel solution benefiting from the high sensitivity of GeSn NCs in short-wave infrared (SWIR). This NVM is a multilayer (ML) capacitor-like device (top contact/ gate oxide/ (FG of GeSn NCs / tunnel oxide)n / Si wafer/ bottom contact, n=1-3) and will be fabricated in 2 versions V1 (uses stacks of HfO2 & SiO2 for gate & tunnel oxides) and V2 (uses only SiO2). A very efficient approach of magnetron sputtering deposition on heated substrate (dynamic annealing) is used, being one-step fabrication. GeSn NCs nodes in FG will be charged by bias voltage & light (wavelengths ≥1000 nm), simultaneously applied. The targeted performances of NVMs with GeSn NCs FG are: 3–5 V memory window, 10%–12% charge loss at 104 s (30% after 10 years), high photosensitivity in 1000–1800 nm range (GeSn NCs with 10%–15% Sn), and low power consumption (by light). The impact of  project is: *scientific (deep understanding of electronic processes and device operation), *technological (processes and parameters), *social & economic (cheap security systems (IoT) for event detection, integrated photonics on Si, image capturing, (photonic) neuromorphic computing devices, computer systems; young people formation). Project results: 5 Q1&Q2 ISI papers, 5 conference communications, 1 patent application, considering open publication practices.