Project ID: PN-II-RU-TE-2014-4-1122

Project Director: Dr. Cristina Besleaga Stan

Project Type: National

Project Program:  HUMAN RESOURCES, Young Teams

Funded by: Romanian National Authority for Scientific Research, UEFISCDI

Contractor: National Institute of Materials Physics

Project Status: Finished

Start Date: 1 October, 2015

End Date: 30 Septembrie, 2017

Project summary: 

The main objective of the project is to manufacture transparent field effect transistors with superior performances, based on aluminum nitride gate dielectrics. Although aluminum nitride is a very promising material for such type of applications, its use as gate dielectric in transparent transistors is an international novelty. Therefore, this project can generate, by its implementation, a significant impact to the development of transparent electronics. The project proposal will entail complex and fluid research activities, from the synthesis of materials and their characterization in view of optimization, to the fabrication of high performing devices on both rigid and flexible substrates. In order to achieve transistors with n functional response superior to the one of the devices used currently in transparent electronics, the project team will employ a series of optimization solutions (testing new geometries, post-fabrication thermal treatments and various encapsulation solutions). Last but not least, the project will represent a great opportunity for the young project team to form a strong scientific nucleus, which, by using the complex infrastructure of the host institution, will be able to contribute to the progress of micro-nano-electronics, on both nationally and internationally level.

Project objectives: 

General Objective: developing low cost, highly efficient AlN/IGZO based TTFTs on glass and flexible substrates.

In order to achieve this goal, the following sequence of

Specific Objectives is proposed:

O1. Fabrication of TFT devices and identification of their optimal post-deposition treatments;
O2. Investigation of electrical active defects in the volume of IGZO and at its interface with AlN;
O3. Optimization of the TTFT device geometry;
O4. Identification of the best encapsulation process for AlN based TTFTs;
O5. Consolidation of a team of young researchers with complementary technical and scientifical skills, capable to accomplish the project objectives;
O6. Dissemination: Publication of scientific ISI articles and a patent request for this type of TTFTs.