Projects
1. Memory capacitors based on ZrO2 with Ge nanocrystals or traps as charge storage nodes
Project Type: PD, Start Date: 2020-09-01 End Date: 2022-08-31
Publications
1. Investigations on HfO2/n-GaAs(110) interface, in-situ obtained by Oxide-MBE
Published: NOV 1 2025, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 198, 109746, DOI: 10.1016/j.mssp.2025.109746
2. Effect of molecular adsorption on the conductivity of selectively grown, interconnected 2D-MoS2 atomically thin flake structures
Published: APR 8 2025, NANOSCALE ADVANCES, 7, DOI: 10.1039/d5na00138b
3. Influence of in-situ hydrogenation on photoelectrical properties of amorphous and nanocrystalline GeSn deposited by magnetron sputtering
Published: JAN 5 2025, JOURNAL OF ALLOYS AND COMPOUNDS, 1010, 177065, DOI: 10.1016/j.jallcom.2024.177065
4. Enhancing Short-Wave Infrared Photosensitivity of SiGe Nanocrystals-Based Films through Embedding Matrix-Induced Passivation, Stress, and Nanocrystallization
Published: MAR 4 2024, JOURNAL OF PHYSICAL CHEMISTRY C, 128, DOI: 10.1021/acs.jpcc.3c06996
5. Atomically Thin MoS2 Layers Selectively Grown on Mo Patterned Substrates for Field-Effect-Controlled Photosensors
Published: FEB 28 2024, ACS APPLIED NANO MATERIALS, 7, DOI: 10.1021/acsanm.3c05809
6. Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix
Published: FEB 12 2024, SCIENTIFIC REPORTS, 14, 3532, DOI: 10.1038/s41598-024-53845-z
7. Annealing Effects on the Charging-Discharging Mechanism in Trilayer Al2O3/Ge/Al2O3 Memory Structures
Published: JAN 17 2024, ACS APPLIED ELECTRONIC MATERIALS, 6, DOI: 10.1021/acsaelm.3c01454
8. SWIR photosensing of GeSn-HfO2 films with small Si amount
Published: 2024, 2024 INTERNATIONAL SEMICONDUCTOR CONFERENCE, CAS 2024, DOI: 10.1109/CAS62834.2024.10736731
9. SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors
Published: MAR 2022, COATINGS, 12, 348, DOI: 10.3390/coatings12030348
10. Memory Properties of Zr-Doped ZrO2 MOS-like Capacitor
Published: SEP 2022, COATINGS, 12, 1369, DOI: 10.3390/coatings12091369
11. Graphene/Ferroelectric (Ge-Doped HfO2) Adaptable Transistors Acting as Reconfigurable Logic Gates
Published: JAN 2022, NANOMATERIALS, 12, 279, DOI: 10.3390/nano12020279
12. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Published: SEP 28 2021, JOURNAL OF MATERIALS CHEMISTRY C, 9, DOI: 10.1039/d1tc02921e
13. Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared
Published: NOV 2021, MATERIALS, 14, 7040, DOI: 10.3390/ma14227040
14. In-situ magnetron sputtering co-deposition of Ge nanoparticles in Si3N4 films for near infrared detection
Published: 2021, 2021 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), DOI: 10.1109/CAS52836.2021.9604124
15. Memory properties of GeZrO2 based trilayer structure
Published: 2021, 2021 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), DOI: 10.1109/CAS52836.2021.9604154
16. GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics
Published: DEC 16 2020, ACS APPLIED MATERIALS & INTERFACES, 12, DOI: 10.1021/acsami.0c15887
17. SWIR photoresponse of SiGe/TiO2 multilayers with Ge-rich SiGe nanocrystals
Published: 2020, CAS 2020 PROCEEDINGS: 2020 INTERNATIONAL SEMICONDUCTOR CONFERENCE, DOI:
18. Wafer-scale graphene-ferroelectric HfO2/Ge-HfO2/HfO2 transistors acting as three-terminal memristors
Published: DEC 4 2020, NANOTECHNOLOGY, 31, 495207, DOI: 10.1088/1361-6528/abb2bf
19. Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe-TiO2 Films and Multilayers
Published: NOV 12 2020, JOURNAL OF PHYSICAL CHEMISTRY C, 124, DOI: 10.1021/acs.jpcc.0c06290
20. Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection
Published: JUL 29 2020, ACS APPLIED MATERIALS & INTERFACES, 12, DOI: 10.1021/acsami.0c06212
21. GeSi Nanocrystals Photo-Sensors for Optical Detection of Slippery Road Conditions Combining Two Classification Algorithms
Published: NOV 2020, SENSORS, 20, 6395, DOI: 10.3390/s20216395
22. GeSn Nanocrystals in GeSnSiO2 by Magnetron Sputtering for Short-Wave Infrared Detection
Published: JUN 2019, ACS APPLIED NANO MATERIALS, 2, +, DOI: 10.1021/acsanm.9b00571
23. Controlling SWIR photosensitivity limit by composition engineering: from Ge to GeSi nanocrystals embedded in TiO2
Published: 2019, 2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, 40, DOI:
24. Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation
Published: NOV 1 2019, NANOTECHNOLOGY, 30, DOI: 10.1088/1361-6528/ab352b
25. Enhanced photoconductivity of SiGe-trilayer stack by retrenching annealing conditions
Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 64, DOI:
26. Enhanced photocurrent in GeSi NCs/TiO2 multilayers
Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 76, DOI:
27. Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect
Published: MAR 20 2018, SCIENTIFIC REPORTS, 8, DOI: 10.1038/s41598-018-23316-3
28. Enhanced photocurrent in GeSi NCs / TiO2 multilayers
29. Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2
Published: JAN 15 2018, APPLIED SURFACE SCIENCE, 428, 702, DOI: 10.1016/j.apsusc.2017.09.038
30. Optoelectric charging-discharging of Ge nanocrystals in floating gate memory
Published: NOV 19 2018, APPLIED PHYSICS LETTERS, 113, DOI: 10.1063/1.5039554
31. MOS DOSIMETER BASED ON Ge NANOCRYSTALS IN HfO2
Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 90, DOI:
32. Influence of preparation conditions on structure and photosensing properties of GeSi/TiO2 multilayers
Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 66, DOI:
33. Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors
Published: APR 28 2017, NANOTECHNOLOGY, 28, DOI: 10.1088/1361-6528/aa66b7
34. Light illumination effects on floating gate memory with Ge nanocrystals in HfO2
Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 90, DOI:
35. Photosensitive GeSi/TiO2 multilayers in VIS-NIR
Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 70, DOI:
36. Correlation between strain and defects in Bi implanted Si
Published: JUN 2016, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 93, 32, DOI: 10.1016/j.jpcs.2016.02.005
37. Non-volatile memory devices based on Ge nanocrystals
Published: FEB 2016, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 213, 259, DOI: 10.1002/pssa.201532376
38. How morphology determines the charge storage properties of Ge nanocrystals in HfO2
Published: MAR 1 2016, SCRIPTA MATERIALIA, 113, 138, DOI: 10.1016/j.scriptamat.2015.10.028
39. Non-volatile memory structures with Ge NCs-HfO2 intermediate layer
Published: 2016, 2016 39TH INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 166, DOI:
40. HfO2 with embedded Ge nanocrystals with memory effects
Published: 2015, 2015 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 48, DOI:
41. STRAIN DRIVEN CHANGES OF DEFECT PARAMETERS IN HEAVY ION IMPLANTED Si
Published: OCT-DEC 2015, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 10, 1381, DOI:
42. Influence of strain field on nanoscale electronic processes in silicon-based semiconductors
Published: 2015, 2015 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 44, DOI:
43. Transition in conduction mechanism in GeSi nanostructures
Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 58, DOI:
44. Charge storage properties of HfO2/Ge-HfO2/SiO2 trilayer structures
Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 62, DOI:
45. Trapping centers in heavy ion irradiated silicon
Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 128, DOI:
46. Strain-induced modification of trap parameters due to the stopped ions in Bi-irradiated Si
Published: NOV 2014, EPL, 108, DOI: 10.1209/0295-5075/108/36004
47. Effect of Bismuth Irradiation on Crystalline Silicon
Published: 2013, 2013 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1-2, 76, DOI:
48. Conduction mechanism versus annealing in SiO2 films with Ge nanoparticles
Published: 2013, 2013 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1-2, 34, DOI:
49. IODINE IRRADIATION INDUCED DEFECTS IN CRYSTALLINE SILICON
Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 276, DOI:
50. TRANSPORT MECHANISMS IN SiO2 FILMS WITH EMBEDDED GERMANIUM NANOPARTICLES
Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 94, DOI:
51. Effects produced by iodine irradiation on high resistivity silicon
Published: DEC 10 2012, APPLIED PHYSICS LETTERS, 101, DOI: 10.1063/1.4772015
52. ELECTRICAL BEHAVIOUR RELATED TO STRUCTURE OF NANOSTRUCTURED GeSi FILMS ANNEALED AT 700 degrees C
Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 112, DOI:
53. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Published: , JOURNAL OF MATERIALS CHEMISTRY C, DOI: 10.1039/d1tc02921e
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