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Dr. Catalin PALADE

Scientific Researcher III

Laboratory of Atomic Structures and Defects in Advanced Materials (LASDAM)

catalin[DOT]palade[AT]infim[DOT]ro

Projects

1. Memory capacitors based on ZrO2 with Ge nanocrystals or traps as charge storage nodes

Project Type: PD, Start Date: 2020-09-01 End Date: 2022-08-31

Publications

1. Investigations on HfO2/n-GaAs(110) interface, in-situ obtained by Oxide-MBE
Authors: Negrila, CC; Cotirlan, C; Iancu, AC; Popescu, DG; Palade, C; Trupina, L

Published: NOV 1 2025, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 198, 109746, DOI: 10.1016/j.mssp.2025.109746

Open Access
2. Effect of molecular adsorption on the conductivity of selectively grown, interconnected 2D-MoS2 atomically thin flake structures
Authors: Stavarache, I; Palade, C; Slav, A; Dascalescu, I; Lepadatu, AM; Matei, E; Besleaga, C; Ciurea, ML; Kardynal, BE; Stoica, T

Published: APR 8 2025, NANOSCALE ADVANCES, 7, DOI: 10.1039/d5na00138b

Open Access
3. Influence of in-situ hydrogenation on photoelectrical properties of amorphous and nanocrystalline GeSn deposited by magnetron sputtering
Authors: Dascalescu, I; Palade, C; Lungu, GA; Lepadatu, AM; Teodorescu, VS; Braic, M; Ciurea, ML; Stoica, T; Slav, A

Published: JAN 5 2025, JOURNAL OF ALLOYS AND COMPOUNDS, 1010, 177065, DOI: 10.1016/j.jallcom.2024.177065

4. Enhancing Short-Wave Infrared Photosensitivity of SiGe Nanocrystals-Based Films through Embedding Matrix-Induced Passivation, Stress, and Nanocrystallization
Authors: Lepadatu, AM; Stavarache, I; Palade, C; Slav, A; Dascalescu, I; Cojocaru, O; Maraloiu, VA; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: MAR 4 2024, JOURNAL OF PHYSICAL CHEMISTRY C, 128, DOI: 10.1021/acs.jpcc.3c06996

5. Atomically Thin MoS2 Layers Selectively Grown on Mo Patterned Substrates for Field-Effect-Controlled Photosensors
Authors: Stavarache, I; Palade, C; Slav, A; Dascalescu, I; Lepadatu, AM; Trupina, L; Matei, E; Ciurea, ML; Stoica, T

Published: FEB 28 2024, ACS APPLIED NANO MATERIALS, 7, DOI: 10.1021/acsanm.3c05809

Open Access
6. Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix
Authors: Dascalescu, I; Palade, C; Slav, A; Stavarache, I; Cojocaru, O; Teodorescu, VS; Maraloiu, VA; Lepadatu, AM; Ciurea, ML; Stoica, T

Published: FEB 12 2024, SCIENTIFIC REPORTS, 14, 3532, DOI: 10.1038/s41598-024-53845-z

7. Annealing Effects on the Charging-Discharging Mechanism in Trilayer Al2O3/Ge/Al2O3 Memory Structures
Authors: Stavarache, I; Palade, C; Maraloiu, VA; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: JAN 17 2024, ACS APPLIED ELECTRONIC MATERIALS, 6, DOI: 10.1021/acsaelm.3c01454

8. SWIR photosensing of GeSn-HfO2 films with small Si amount
Authors: Palade, C; Slav, A; Stavarache, I; Dascalescu, I; Cojocaru, O; Stoica, T; Ciurea, ML; Lepadatu, AM

Published: 2024, 2024 INTERNATIONAL SEMICONDUCTOR CONFERENCE, CAS 2024, DOI: 10.1109/CAS62834.2024.10736731

Open Access
9. SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors
Authors: Palade, C; Slav, A; Cojocaru, O; Teodorescu, VS; Stoica, T; Ciurea, ML; Lepadatu, AM

Published: MAR 2022, COATINGS, 12, 348, DOI: 10.3390/coatings12030348

Open Access
10. Memory Properties of Zr-Doped ZrO2 MOS-like Capacitor
Authors: Palade, C; Slav, A; Stavarache, I; Maraloiu, VA; Negrila, C; Ciurea, ML

Published: SEP 2022, COATINGS, 12, 1369, DOI: 10.3390/coatings12091369

Open Access
11. Graphene/Ferroelectric (Ge-Doped HfO2) Adaptable Transistors Acting as Reconfigurable Logic Gates
Authors: Dragoman, M; Dinescu, A; Dragoman, D; Palade, C; Teodorescu, VS; Ciurea, ML

Published: JAN 2022, NANOMATERIALS, 12, 279, DOI: 10.3390/nano12020279

12. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Authors: Palade, C; Lepadatu, AM; Slav, A; Cojocaru, O; Iuga, A; Maraloiu, VA; Moldovan, A; Dinescu, M; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: SEP 28 2021, JOURNAL OF MATERIALS CHEMISTRY C, 9, DOI: 10.1039/d1tc02921e

Open Access
13. Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared
Authors: Palade, C; Lepadatu, AM; Slav, A; Teodorescu, VS; Stoica, T; Ciurea, ML; Ursutiu, D; Samoila, C

Published: NOV 2021, MATERIALS, 14, 7040, DOI: 10.3390/ma14227040

14. In-situ magnetron sputtering co-deposition of Ge nanoparticles in Si3N4 films for near infrared detection
Authors: Stavarache, I; Palade, C; Prepelita, P; Teodorescu, VS; Ciurea, ML

Published: 2021, 2021 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), DOI: 10.1109/CAS52836.2021.9604124

15. Memory properties of GeZrO2 based trilayer structure
Authors: Palade, C; Slav, A; Ciurea, ML

Published: 2021, 2021 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), DOI: 10.1109/CAS52836.2021.9604154

16. GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics
Authors: Slav, A; Dascalescu, I; Lepadatu, AM; Palade, C; Zoita, NC; Stroescu, H; Iftimie, S; Lazanu, S; Gartner, M; Buca, D; Teodorescu, VS; Ciurea, ML; Braic, M; Stoica, T

Published: DEC 16 2020, ACS APPLIED MATERIALS & INTERFACES, 12, DOI: 10.1021/acsami.0c15887

17. SWIR photoresponse of SiGe/TiO2 multilayers with Ge-rich SiGe nanocrystals
Authors: Lepadatu, AM; Palade, C; Slav, A; Dascalescu, I; Cojocaru, O; Iftimie, S; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: 2020, CAS 2020 PROCEEDINGS: 2020 INTERNATIONAL SEMICONDUCTOR CONFERENCE, DOI:

18. Wafer-scale graphene-ferroelectric HfO2/Ge-HfO2/HfO2 transistors acting as three-terminal memristors
Authors: Dragoman, M; Dinescu, A; Dragoman, D; Palade, C; Moldovan, A; Dinescu, M; Teodorescu, VS; Ciurea, ML

Published: DEC 4 2020, NANOTECHNOLOGY, 31, 495207, DOI: 10.1088/1361-6528/abb2bf

19. Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe-TiO2 Films and Multilayers
Authors: Lepadatu, AM; Palade, C; Slav, A; Cojocaru, O; Maraloiu, VA; Iftimie, S; Comanescu, F; Dinescu, A; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: NOV 12 2020, JOURNAL OF PHYSICAL CHEMISTRY C, 124, DOI: 10.1021/acs.jpcc.0c06290

20. Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection
Authors: Dascalescu, I; Zoita, NC; Slav, A; Matei, E; Iftimie, S; Comanescu, F; Lepadatu, AM; Palade, C; Lazanu, S; Buca, D; Teodorescu, VS; Ciurea, ML; Braic, M; Stoica, T

Published: JUL 29 2020, ACS APPLIED MATERIALS & INTERFACES, 12, DOI: 10.1021/acsami.0c06212

Open Access
21. GeSi Nanocrystals Photo-Sensors for Optical Detection of Slippery Road Conditions Combining Two Classification Algorithms
Authors: Palade, C; Stavarache, I; Stoica, T; Ciurea, ML

Published: NOV 2020, SENSORS, 20, 6395, DOI: 10.3390/s20216395

22. GeSn Nanocrystals in GeSnSiO2 by Magnetron Sputtering for Short-Wave Infrared Detection
Authors: Slav, A; Palade, C; Logofatu, C; Dascalescu, I; Lepadatu, AM; Stavarache, I; Comanescu, F; Iftimie, S; Antohe, S; Lazanu, S; Teodorescu, VS; Buca, D; Ciurea, ML; Braic, M; Stoica, T

Published: JUN 2019, ACS APPLIED NANO MATERIALS, 2, +, DOI: 10.1021/acsanm.9b00571

23. Controlling SWIR photosensitivity limit by composition engineering: from Ge to GeSi nanocrystals embedded in TiO2
Authors: Dascalescu, I; Cojocaru, O; Lalau, I; Palade, C; Slav, A; Lepadatu, AM; Lazanu, S; Stoica, T; Ciurea, ML

Published: 2019, 2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, 40, DOI:

24. Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation
Authors: Palade, C; Slav, A; Lepadatu, AM; Stavarache, I; Dascalescu, I; Maraloiu, AV; Negrila, C; Logofatu, C; Stoica, T; Teodorescu, VS; Ciurea, ML; Lazanu, S

Published: NOV 1 2019, NANOTECHNOLOGY, 30, DOI: 10.1088/1361-6528/ab352b

25. Enhanced photoconductivity of SiGe-trilayer stack by retrenching annealing conditions
Authors: Sultan, MT; Gudmundsson, JT; Manolescu, A; Ciurea, ML; Palade, C; Maraloiu, AV; Svavarsson, HG

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 64, DOI:

26. Enhanced photocurrent in GeSi NCs/TiO2 multilayers
Authors: Palade, C; Slav, A; Cojocaru, O; Teodorescu, VS; Lazanu, S; Stoica, T; Sultan, MT; Svavarsson, HG; Ciurea, ML

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 76, DOI:

27. Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect
Authors: Lepadatu, AM; Slav, A; Palade, C; Dascalescu, I; Enculescu, M; Iftimie, S; Lazanu, S; Teodorescul, VS; Ciurea, ML; Stoica, T

Published: MAR 20 2018, SCIENTIFIC REPORTS, 8, DOI: 10.1038/s41598-018-23316-3

28. Enhanced photocurrent in GeSi NCs / TiO2 multilayers
Authors: Palade, C; Slav, A; Cojocaru, O; Teodorescu, VS; Lazanu, S; Stoica, T; Sultan, MT; Svavarsson, HG; Ciurea, ML

Published: 2018, , DOI:

29. Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2
Authors: Palade, C; Lepadatu, AM; Slav, A; Lazanu, S; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: JAN 15 2018, APPLIED SURFACE SCIENCE, 428, 702, DOI: 10.1016/j.apsusc.2017.09.038

30. Optoelectric charging-discharging of Ge nanocrystals in floating gate memory
Authors: Palade, C; Slav, A; Lepadatu, AM; Maraloiu, AV; Dascalescu, I; Iftimie, S; Lazanu, S; Ciurea, ML; Stoica, T

Published: NOV 19 2018, APPLIED PHYSICS LETTERS, 113, DOI: 10.1063/1.5039554

31. MOS DOSIMETER BASED ON Ge NANOCRYSTALS IN HfO2
Authors: Palade, C; Slav, A; Lepadatu, AM; Stavarache, I; Dascalescu, I; Cojocaru, O; Stoica, T; Ciurea, ML; Lazanu, S

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 90, DOI:

32. Influence of preparation conditions on structure and photosensing properties of GeSi/TiO2 multilayers
Authors: Slav, A; Palade, C; Stavarache, I; Teodorescu, VS; Ciurea, ML; Muller, R; Dinescu, A; Sultan, MT; Manolescu, A; Gudmundsson, JT; Svavarsson, HG

Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 66, DOI:

33. Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors
Authors: Lepadatu, AM; Palade, C; Slav, A; Maraloiu, AV; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, VS; Ciurea, ML

Published: APR 28 2017, NANOTECHNOLOGY, 28, DOI: 10.1088/1361-6528/aa66b7

34. Light illumination effects on floating gate memory with Ge nanocrystals in HfO2
Authors: Palade, C; Slav, A; Lepadatu, AM; Lazanu, S; Ciurea, ML; Stoica, T

Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 90, DOI:

35. Photosensitive GeSi/TiO2 multilayers in VIS-NIR
Authors: Palade, C; Dascalescu, I; Slav, A; Lepadatu, AM; Lazanu, S; Stoica, T; Teodorescu, VS; Ciurea, ML; Comanescu, F; Muller, R; Dinescu, A; Enuica, A

Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 70, DOI:

36. Correlation between strain and defects in Bi implanted Si
Authors: Palade, C; Lepadatu, AM; Slav, A; Ciurea, ML; Lazanu, S

Published: JUN 2016, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 93, 32, DOI: 10.1016/j.jpcs.2016.02.005

37. Non-volatile memory devices based on Ge nanocrystals
Authors: Vasilache, D; Cismaru, A; Dragoman, M; Stavarache, I; Palade, C; Lepadatu, AM; Ciurea, ML

Published: FEB 2016, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 213, 259, DOI: 10.1002/pssa.201532376

38. How morphology determines the charge storage properties of Ge nanocrystals in HfO2
Authors: Slav, A; Palade, C; Lepadatu, AM; Ciurea, ML; Teodorescu, VS; Lazanu, S; Maraloiu, AV; Logofatu, C; Braic, M; Kiss, A

Published: MAR 1 2016, SCRIPTA MATERIALIA, 113, 138, DOI: 10.1016/j.scriptamat.2015.10.028

39. Non-volatile memory structures with Ge NCs-HfO2 intermediate layer
Authors: Palade, C; Slav, A; Lepadatu, AM; Maraloiu, AV; Lazanu, S; Logofatu, C; Teodorescu, VS; Ciurea, ML

Published: 2016, 2016 39TH INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 166, DOI:

40. HfO2 with embedded Ge nanocrystals with memory effects
Authors: Palade, C; Slav, A; Lepadatu, AM; Maraloiu, AV; Teodorescu, VS; Ciurea, ML

Published: 2015, 2015 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 48, DOI:

41. STRAIN DRIVEN CHANGES OF DEFECT PARAMETERS IN HEAVY ION IMPLANTED Si
Authors: Palade, C; Lepadatu, AM; Slav, A; Ciurea, ML; Lazanu, S

Published: OCT-DEC 2015, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 10, 1381, DOI:

42. Influence of strain field on nanoscale electronic processes in silicon-based semiconductors
Authors: Lepadatu, AM; Palade, C; Slav, A; Lazanu, S

Published: 2015, 2015 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 44, DOI:

43. Transition in conduction mechanism in GeSi nanostructures
Authors: Palade, C; Lepadatu, AM; Stavarache, I; Teodorescu, VS; Ciurea, ML

Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 58, DOI:

44. Charge storage properties of HfO2/Ge-HfO2/SiO2 trilayer structures
Authors: Palade, C; Slav, A; Lepadatu, AM; Teodorescu, VS; Ciurea, ML

Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 62, DOI:

45. Trapping centers in heavy ion irradiated silicon
Authors: Palade, C; Lazanu, S; Ciurea, ML

Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 128, DOI:

46. Strain-induced modification of trap parameters due to the stopped ions in Bi-irradiated Si
Authors: Ciurea, ML; Lazanu, S; Slav, A; Palade, C

Published: NOV 2014, EPL, 108, DOI: 10.1209/0295-5075/108/36004

47. Effect of Bismuth Irradiation on Crystalline Silicon
Authors: Palade, C; Slav, A; Ciurea, ML; Lazanu, S

Published: 2013, 2013 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1-2, 76, DOI:

48. Conduction mechanism versus annealing in SiO2 films with Ge nanoparticles
Authors: Palade, C; Lepadatu, AM; Stavarache, I; Teodorescu, VS; Ciurea, ML

Published: 2013, 2013 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1-2, 34, DOI:

49. IODINE IRRADIATION INDUCED DEFECTS IN CRYSTALLINE SILICON
Authors: Slav, A; Lepadatu, AM; Palade, C; Stavarache, I; Iordache, G; Ciurea, ML; Lazanu, S; Mitroi, MR

Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 276, DOI:

50. TRANSPORT MECHANISMS IN SiO2 FILMS WITH EMBEDDED GERMANIUM NANOPARTICLES
Authors: Palade, C; Lepadatu, AM; Stavarache, I; Maraloiu, AV; Teodorescu, VS; Ciurea, ML

Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 94, DOI:

51. Effects produced by iodine irradiation on high resistivity silicon
Authors: Lazanu, S; Slav, A; Lepadatu, AM; Stavarache, I; Palade, C; Iordache, G; Ciurea, ML

Published: DEC 10 2012, APPLIED PHYSICS LETTERS, 101, DOI: 10.1063/1.4772015

52. ELECTRICAL BEHAVIOUR RELATED TO STRUCTURE OF NANOSTRUCTURED GeSi FILMS ANNEALED AT 700 degrees C
Authors: Lepadatu, AM; Stavarache, I; Maraloiu, A; Palade, C; Teodorescu, VS; Ciurea, ML

Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 112, DOI:

53. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Authors: Palade, C; Lepadatu, AM; Slav, A; Cojocaru, O; Iuga, A; Maraloiu, VA; Moldovan, A; Dinescu, M; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: , JOURNAL OF MATERIALS CHEMISTRY C, DOI: 10.1039/d1tc02921e

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