In the present work, single phase CoSb3 skutterudite nanomaterials were prepared via a ball milling method, and their thermoelectric characteristics were compared with the samples synthesized by the solvo-hydrothermal method. Thermoelectric transport properties were recorded in the temperature regime of 300-830 K. Both samples exhibit p-type conduction behavior with a positive sign of Seebeck coefficient. CoSb3 ball mill sample exhibit higher resistivity of 127 x 10(-5)Omega.m at 300 K as compared to CoSb3 solvo-hydrothermal sample with 4.85 x 10(-5)Omega.m. However, CoSb3 ball mill sample show enhanced Seebeck coefficient of 183 mu V/K at 473 K where CoSb3 solvo-hydrothermal sample depict 98 mu V/K at 650 K. Furthermore, the total thermal conductivity of sintered CoSb3 ball mill and CoSb3 solvo-hydrothermal samples was found to be 3.02 Wm(-1)K(-1) and 3.23 W m(-1)K(-1) at room temperature and reaches a significantly lower value of 2.47 W m(-1)K(-1) and 2.46 W m(-1)K(-1) at 580 and 670 K, respectively. The dimensionless figure of merit ZT values of CoSb3 ball mill and CoSb3 solvo-hydrothermal obtained are 0.053 and 0.060 at 650 and 700 K, respectively. A systematic tuning of processing parameters by ball milling method can lead to better thermoelectric efficiency.

Structure, composition, and transport properties of Mg2-xAgx(Si0.3Sn0.7)1-yGay (x = {0, 0.021, y = {0, 0.02, 0.04, 0.061) solid solutions produced by melting followed by spark plasma sintering are investigated. The preparation method is adjusted to control sample stoichiometry and phase composition. Doping with two types of dopants at different sites, while employing synthesis methods which generate a small amount of secondary phase, is an uncommon approach in this materials, expected to enhance their thermoelectric performance. An enhanced carrier concentration but diminished mobility is observed in the samples with higher amounts of dopant, which leads to the highest values of the power factor, for Mg1.98Ag0.02Si0.27Sn0.67Ga0.06 in a narrow temperature range (575-675 K) around the peak value, of 9.10-4 Wm-1 K-2 at 625 K. The two types of dopants have opposing effects on the thermal conductivity, with Ag promoting strong phonon scattering and decreasing its values while Ga increases them because of its en-hanced carrier concentration. The rather high thermal conductivity values of the double doped compounds produce low values of the ZT without exceeding 0.29 at 627 K for Mg1.98Ag0.02Si0.3Sn0.7 sample.(c) 2023 Elsevier B.V. All rights reserved.

In this work, the influence of the preparation route on the structural, morphological, and thermoelectric properties of the Mg2Si0.4Sn0.6 solid solutions is investigated. The synthesis based on melting the constituent elements in a closed graphite crucible followed by spark plasma sintering allows mixing elements with a large difference of their melting temperatures and a good control of sample stoichiometry. The optimized synthesis route is validated by the doped V and Sb samples, which yield good thermoelectric performance. The n-type doping leads to two orders of magnitude increase of the carrier concentration, and thus a subsequent increase of the electrical conductivity, which, in turn, augments greatly the power factor of the Mg1.98V0.02Si0.385Sn0.6Sb0.015 to 42.61 x10(-4) Wm(-1)K 2 at 650K. Although doping slightly enlarges the thermal conductivity, a peak value of the figure of merit ZT similar to 1.15 is obtained at 723K, which is 20 times higher than the ZT of un-doped material.

In the present work, stannite Cu2CoSnS4 (CCTS) films were elaborated using spray pyrolysis method on soda-lime glass, at different deposition temperatures (T-d = 250, 300, and 350 degrees C), followed by different chosen sulfurization temperatures (T-s = 450, 500, and 550 degrees C). X-ray diffraction (XRD) revealed the nearly single-phase formation of CCTS films at 300 degrees C deposition temperature. After sulfurization in argon flow, the XRD lines become narrower, the average crystallite size expanding above 70 nm. The Raman spectroscopy analysis confirmed the stannite structure formation, as well as the presence CoS2 secondary phases, which reduces at higher sulfurization temperature (550 degrees C). The energy dispersive spectroscopy results indicated atomic ratios of Cu/Co/Sn/S close to the ideal stoichiometric ratio 2:1:1:4. The room temperature photoluminescence emission is recorded with maximum in the 1.35-1.40 eV range. Thermoelectric properties are measured up to 130 degrees C, the films show poor power factor as a result of small positive Seebeck coefficients 10-45 Of K -1 and low electrical conductivity despite of having relatively high carrier concentration (similar to 10(20) cm(-3)).