Projects
1. Photodetectors with GeSn nanocrystals in Si3N4 matrix highly photosensitive from 0.5 µm to 2.4 µm (GeSnPhotoSiNdet)
Project Type: TE, cod PN-III-P1-1.1-TE-2021-1491, Start Date: 2022-05-15 End Date: 2024-05-14
2. Ge nanocrystals embedded in amorphous matrices with photoconductive properties
Project Type: PD33/05.10.2011 (PN-II-RU-PD-2011-3-0094), Start Date: 2011-11-05 End Date: 2013-10-04
Publications
1. Annealing Effects on the Charging-Discharging Mechanism in Trilayer Al2O3/Ge/Al2O3 Memory Structures
Published: 2024 JAN 17 2024, ACS APPLIED ELECTRONIC MATERIALS, DOI: 10.1021/acsaelm.3c01454
2. Enhancing Short-Wave Infrared Photosensitivity of SiGe Nanocrystals-Based Films through Embedding Matrix-Induced Passivation, Stress, and Nanocrystallization
Published: 2024 MAR 4 2024, JOURNAL OF PHYSICAL CHEMISTRY C, DOI: 10.1021/acs.jpcc.3c06996
3. Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix
Published: FEB 12 2024, SCIENTIFIC REPORTS, 14, 3532, DOI: 10.1038/s41598-024-53845-z
4. Atomically Thin MoS2 Layers Selectively Grown on Mo Patterned Substrates for Field-Effect-Controlled Photosensors
Published: FEB 28 2024, ACS APPLIED NANO MATERIALS, 7, DOI: 10.1021/acsanm.3c05809
5. Annealing Effects on the Charging-Discharging Mechanism in Trilayer Al2O3/Ge/Al2O3 Memory Structures
Published: JAN 17 2024, ACS APPLIED ELECTRONIC MATERIALS, 6, DOI: 10.1021/acsaelm.3c01454
6. Enhancing Short-Wave Infrared Photosensitivity of SiGe Nanocrystals-Based Films through Embedding Matrix-Induced Passivation, Stress, and Nanocrystallization
Published: MAR 4 2024, JOURNAL OF PHYSICAL CHEMISTRY C, 128, DOI: 10.1021/acs.jpcc.3c06996
7. Optimizing SiGe-SiO2 Visible-Short-Wave Infrared Photoresponse by Modulating Interplay Between Strain and Defects Through Annealing
Published: 2024 JUN 19 2024, ADVANCED PHOTONICS RESEARCH, DOI: 10.1002/adpr.202300316
8. From non-stoichiometric CTSe to single phase and stoichiometric CZTSe films by annealing under Sn plus Se atmosphere
Published: NOV 1 2023, CERAMICS INTERNATIONAL, 49, DOI: 10.1016/j.ceramint.2023.08.056
9. Pulsed laser deposited V2O3 thin-films on graphene/aluminum foil for micro-battery applications
Published: MAR 15 2023, JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 933, 117290, DOI: 10.1016/j.jelechem.2023.117290
10. Effects of Solvent Additive and Micro-Patterned Substrate on the Properties of Thin Films Based on P3HT:PC70BM Blends Deposited by MAPLE
Published: JAN 2023, MATERIALS, 16, 144, DOI: 10.3390/ma16010144
11. Memory Properties of Zr-Doped ZrO2 MOS-like Capacitor
Published: SEP 2022, COATINGS, 12, 1369, DOI: 10.3390/coatings12091369
12. A Two-Step Magnetron Sputtering Approach for the Synthesis of Cu2ZnSnS4 Films from Cu2SnS3\ZnS Stacks
Published: JUN 2022, ACS OMEGA, DOI: 10.1021/acsomega.2c02475
13. Argon pressure dependent optoelectronic characteristics of amorphous tin oxide thin films obtained by non-reactive RF sputtering process
Published: MAY 2021, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 32, 12317, DOI: 10.1007/s10854-021-05861-2
14. Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories
Published: MAR 15 2021, APPLIED SURFACE SCIENCE, 542, DOI: 10.1016/j.apsusc.2020.148702
15. Thermal stability of amorphous metal chalcogenide thin films
Published: MAY 1 2021, JOURNAL OF NON-CRYSTALLINE SOLIDS, 559, DOI: 10.1016/j.jnoncrysol.2021.120663
16. GeSi Nanocrystals Photo-Sensors for Optical Detection of Slippery Road Conditions Combining Two Classification Algorithms
Published: NOV 2020, SENSORS, 20, DOI: 10.3390/s20216395
17. SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared
Published: FEB 24 2020, SCIENTIFIC REPORTS, 10, DOI: 10.1038/s41598-020-60000-x
18. GeSn Nanocrystals in GeSnSiO2 by Magnetron Sputtering for Short-Wave Infrared Detection
Published: JUN 2019, ACS APPLIED NANO MATERIALS, 2, +, DOI: 10.1021/acsanm.9b00571
19. Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering
Published: JUL 25 2019, BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 10, 1522, DOI: 10.3762/bjnano.10.149
20. PHOTO-ELECTRICAL PROPERTIES OF THIN FILMS WITH GE NANOPARTICLES EMBEDDED IN TIO2 MATRIX
21. High performance NIR photosensitive films of Ge nanoparticles in Si3N4
Published: 2019, 2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, 228, DOI:
22. Fabrication and characterization of Si1-xGex nanocrystals in as-grown and annealed structures: a comparative study
Published: SEP 17 2019, BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 10, 1882, DOI: 10.3762/bjnano.10.182
23. Ge nanoparticles in SiO2 for near infrared photodetectors with high performance
Published: JUL 16 2019, SCIENTIFIC REPORTS, 9, DOI: 10.1038/s41598-019-46711-w
24. Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation
Published: NOV 1 2019, NANOTECHNOLOGY, 30, DOI: 10.1088/1361-6528/ab352b
25. Enhanced photoconductivity of SiGe nanocrystals in SiO2 driven by mild annealing
Published: MAR 1 2019, APPLIED SURFACE SCIENCE, 469, 878, DOI: 10.1016/j.apsusc.2018.11.061
26. Magnetism and magnetoresistance of single Ni-Cu alloy nanowires
Published: AUG 30 2018, BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 9, 2355, DOI: 10.3762/bjnano.9.219
27. GeSi nanocrystals in SiO2 matrix with extended photoresponse in near infrared
Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 256, DOI:
28. MOS DOSIMETER BASED ON Ge NANOCRYSTALS IN HfO2
Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 90, DOI:
29. Influence of preparation conditions on structure and photosensing properties of GeSi/TiO2 multilayers
Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 66, DOI:
30. Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature
Published: OCT 2017, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32, DOI: 10.1088/1361-6641/aa8154
31. Chalcogenide thin films deposited by rfMS technique using a single quaternary target
Published: DEC 1 2017, APPLIED SURFACE SCIENCE, 424, 427, DOI: 10.1016/j.apsusc.2016.11.071
32. Isotactic polypropylene-vapor grown carbon nanofibers composites: Electrical properties
Published: OCT 10 2017, JOURNAL OF APPLIED POLYMER SCIENCE, 134, DOI: 10.1002/APP.45297
33. Transparent thin films of indium tin oxide: Morphology-optical investigations, inter dependence analyzes
Published: DEC 1 2017, APPLIED SURFACE SCIENCE, 424, 373, DOI: 10.1016/j.apsusc.2017.02.106
34. INVESTIGATIONS ON THE PROPERTIES OF A TWO-DIMENSIONAL NANOPATTERNED METALLIC FILM
Published: OCT-DEC 2016, Digest Journal of Nanomaterials and Biostructures, 11, 1229, DOI:
35. Non-volatile memory devices based on Ge nanocrystals
Published: FEB 2016, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 213, 259, DOI: 10.1002/pssa.201532376
36. Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties
Published: OCT 21 2016, BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 7, 1500, DOI: 10.3762/bjnano.7.142
37. Flexible heterostructures based on metal phthalocyanines thin films obtained by MAPLE
Published: JUN 30 2016, APPLIED SURFACE SCIENCE, 374, 410, DOI: 10.1016/j.apsusc.2015.10.166
38. Fast atomic diffusion in amorphous films induced by laser pulse annealing
Published: 2016, 2016 39TH INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 158, DOI:
39. Nanostructuring of GeTiO amorphous films by pulsed laser irradiation
Published: APR 7 2015, BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 6, 900, DOI: 10.3762/bjnano.6.92
40. HETEROSTRUCTURES BASED ON SMALL MOLECULES ORGANIC COMPOUNDS
Published: OCT-DEC 2015, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 10, 1392, DOI:
41. Transition in conduction mechanism in GeSi nanostructures
Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 58, DOI:
42. Annealing induced changes in the structure, optical and electrical properties of GeTiO2 nanostructured films
Published: AUG 1 2014, APPLIED SURFACE SCIENCE, 309, 174, DOI: 10.1016/j.apsusc.2014.04.212
43. GeSiO Based Nanostructures: Electrical Behaviour Related to Morphology and Preparation Method
Published: 2014, SIZE EFFECTS IN NANOSTRUCTURES: BASICS AND APPLICATIONS, 205, 73, DOI: 10.1007/978-3-662-44479-5_3
44. Electrical properties related to the structure of GeSi nanostructured films
Published: JUL 2014, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 251, 1346, DOI: 10.1002/pssb.201350112
45. TRANSMISSION ELECTRON MICROSCOPY STUDY OF Ge NANOPARTICLES FORMED IN GeSiO FILMS BY ANNEALING IN HYDROGEN
Published: OCT-DEC 2013, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 8, 1780, DOI:
46. Quantum Well Solar Cells: Physics, Materials and Technology
Published: 2013, ADVANCED SOLAR CELL MATERIALS, TECHNOLOGY, MODELING, AND SIMULATION, 47, DOI: 10.4018/978-1-4666-1927-2.ch003
47. Conduction mechanism versus annealing in SiO2 films with Ge nanoparticles
Published: 2013, 2013 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1-2, 34, DOI:
48. Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2
Published: NOV 15 2013, APPLIED SURFACE SCIENCE, 285, 179, DOI: 10.1016/j.apsusc.2013.08.031
49. Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion-crystallization process
Published: SEP 15 2013, JOURNAL OF NANOPARTICLE RESEARCH, 15, DOI: 10.1007/s11051-013-1981-y
50. Structure and electrical transport in films of Ge nanoparticles embedded in SiO2 matrix
Published: JUL 2012, JOURNAL OF NANOPARTICLE RESEARCH, 14, DOI: 10.1007/s11051-012-0930-5
51. IODINE IRRADIATION INDUCED DEFECTS IN CRYSTALLINE SILICON
Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 276, DOI:
52. TRANSPORT MECHANISMS IN SiO2 FILMS WITH EMBEDDED GERMANIUM NANOPARTICLES
Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 94, DOI:
53. Effects produced by iodine irradiation on high resistivity silicon
Published: DEC 10 2012, APPLIED PHYSICS LETTERS, 101, DOI: 10.1063/1.4772015
54. ELECTRICAL BEHAVIOUR RELATED TO STRUCTURE OF NANOSTRUCTURED GeSi FILMS ANNEALED AT 700 degrees C
Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 112, DOI:
55. Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix
Published: JAN 2011, JOURNAL OF NANOPARTICLE RESEARCH, 13, 232, DOI: 10.1007/s11051-010-0021-4
56. PREPARATION AND ELECTRICAL CHARACTERIZATION OF SiGe NANOSTRUCTURES
Published: 2011, 2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2, 52, DOI:
57. VOLTAGE PERCOLATION THRESHOLDS EVIDENCED IN THE ELECTRICAL BEHAVIOUR OF DIFFERENT NANOSTRUCTURES
Published: JUL-SEP 2011, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 6, 1083, DOI:
58. Stress-induced traps in multilayered structures
Published: JAN 1 2011, JOURNAL OF APPLIED PHYSICS, 109, DOI: 10.1063/1.3525582
59. Calculation of the quantum efficiency for the absorption on confinement levels in quantum dots
Published: APR 2011, JOURNAL OF NANOPARTICLE RESEARCH, 13, 1612, DOI: 10.1007/s11051-010-9913-6
60. STUDIES OF LONG TIME AND TRANSIENT EFFECTS INDUCED BY RADIATION IN CRYSTALLINE MATERIALS
Published: 2011, 2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2, 264, DOI:
61. STUDY OF Ge NANOPARTICLES EMBEDDED IN AN AMORPHOUS SiO2 MATRIX WITH PHOTOCONDUCTIVE PROPERTIES
Published: JAN-MAR 2011, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 6, 73, DOI:
62. PREPARATION INDUCED ELECTRICAL BEHAVIOUR OF GeSiO NANOSTRUCTURES
Published: 2011, 2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2, 34, DOI:
63. Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride
Published: 2011, NANOSCALE RESEARCH LETTERS, 6, DOI: 10.1186/1556-276X-6-88
64. STUDY OF THE INTERACTIONS OF IONS IN SILICON: TRANSIENT PROCESSES AND DEFECT PRODUCTION
Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 332, DOI:
65. TEMPERATURE DEPENDENCE OF CAPTURE COEFFICIENTS IN TRAPPING PHENOMENA
Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 374, DOI:
66. The influence of shape and potential barrier on confinement energy levels in quantum dots
Published: FEB 2010, JOURNAL OF APPLIED PHYSICS, 107, DOI: 10.1063/1.3284083
67. INFLUENCE OF PREPARATION METHOD ON STRUCTURAL PROPERTIES OF GeSiO NANOSYSTEMS
Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 80, DOI: 10.1109/SMICND.2010.5650255
68. INVESTIGATION OF ELECTRICAL PROPERTIES OF CARBON NANOTUBES
Published: 2009, CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, +, DOI: 10.1109/SMICND.2009.5336593
69. DEFECT PRODUCTION IN SILICON AND GERMANIUM BY LOW TEMPERATURE IRRADIATION
Published: 2009, CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, +, DOI:
70. Polypyrrole - porous silicon nanocomposites
Published: SEP 2008, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 10, 2324, DOI:
71. MODELING OF TRAP DISCHARGING PROCESSES IN MULTIPLE QUANTUM WELL STRUCTURES
Published: 2008, CAS: 2008 INTERNATIONAL SEMICONDUCTOR CONFERENCE, PROCEEDINGS, +, DOI: 10.1109/SMICND.2008.4703332
72. Defects in silicon: From bulk crystals to nanostructures
73. Percolation phenomena in silicon - Based nanocrystalline systems
Published: 2007, CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 578, DOI: 10.1109/SMICND.2007.4519789
74. Quantum confinement model for phototransport processes in nanocrystalline porous silicon
Published: 2007, 2006 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, +, DOI:
75. Phototransport and photoluminescence in nanocrystalline porous silicon
Published: AUG 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, 2643, DOI:
76. Percolation phenomena in Si-SiO2 nanocomposite films
Published: AUG 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, 2647, DOI:
77. Quantum confinement modeling of electrical and optical processes in nanocrystalline silicon
Published: DEC 2006, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 8, 2160, DOI:
78. Quantum confinement in the photoluminescence of nanocrystalline porous silicon
Published: 2005, CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE, 1-2, 58, DOI:
79. Argon pressure dependent optoelectronic characteristics of amorphous tin oxide thin films obtained by non-reactive RF sputtering process
Published: , JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, DOI: 10.1007/s10854-021-05861-2
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