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drd. Ovidiu Cojocaru

Assistant Researcher

Laboratory of Atomic Structures and Defects in Advanced Materials

ovidiu[DOT]cojocaru[AT]infim[DOT]ro
Keywords: DFT computations, (photo)electrical measurements

Education

2019 - present       Doctoral School in Physics - Condensed Matter Physics

                              University of Bucharest, Romania

2017 - 2019           Master - Physics of Advanced Materials and Nanostructures

                              Faculty of Physics, University of Bucharest, Romania

Positions

2018 - present       Research Assistant

                               Group of “Nanomaterials and Nanostructures based on SiGeSn”

                               Laboratory 30 “Nanoscale Condensed Matter” - NIMP

 

Research interests

(Photo)electrical properties of films and multilayers of GeSi nanocrystals embedded in oxides (TiO2, HfO2); memory properties of floating gate memories with Ge nanoparticles in HfO2 and Al2O3; ferroelectric properties of orthorhombic HfO2 based structures

Expertize

(Photo)electrical measurements; UV-Vis-NIR spectroscopy; ab initio computations for electronic structure properties of Si-Ge-Sn based nanocrystals and polarization of orthorhombic HfO2 based materials

Publications

1. SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors
Authors: Palade, C; Slav, A; Cojocaru, O; Teodorescu, VS; Stoica, T; Ciurea, ML; Lepadatu, AM

Published: MAR 2022, COATINGS, 12, 348, DOI: 10.3390/coatings12030348

2. Bandgap atomistic calculations on hydrogen-passivated GeSi nanocrystals
Authors: Cojocaru, O; Lepadatu, AM; Nemnes, GA; Stoica, T; Ciurea, ML

Published: JUN 30 2021, SCIENTIFIC REPORTS, 11, DOI: 10.1038/s41598-021-92936-z

3. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Authors: Palade, C; Lepadatu, AM; Slav, A; Cojocaru, O; Iuga, A; Maraloiu, VA; Moldovan, A; Dinescu, M; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: SEP 28 2021, JOURNAL OF MATERIALS CHEMISTRY C, 9, 12366, DOI: 10.1039/d1tc02921e

4. Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories
Authors: Stavarache, I; Cojocaru, O; Maraloiu, VA; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: MAR 15 2021, APPLIED SURFACE SCIENCE, 542, DOI: 10.1016/j.apsusc.2020.148702

5. Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe-TiO2 Films and Multilayers
Authors: Lepadatu, AM; Palade, C; Slav, A; Cojocaru, O; Maraloiu, VA; Iftimie, S; Comanescu, F; Dinescu, A; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: NOV 12 2020, JOURNAL OF PHYSICAL CHEMISTRY C, 124, 25053, DOI: 10.1021/acs.jpcc.0c06290

6. SWIR photoresponse of SiGe/TiO2 multilayers with Ge-rich SiGe nanocrystals
Authors: Lepadatu, AM; Palade, C; Slav, A; Dascalescu, I; Cojocaru, O; Iftimie, S; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: 2020, CAS 2020 PROCEEDINGS: 2020 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 238, DOI:

7. High performance NIR photosensitive films of Ge nanoparticles in Si3N4
Authors: Stavarache, I; Prepelita, P; Lalau, I; Cojocaru, O; Teodorescu, VS; Ciurea, ML

Published: 2019, 2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, 228, DOI:

8. Controlling SWIR photosensitivity limit by composition engineering: from Ge to GeSi nanocrystals embedded in TiO2
Authors: Dascalescu, I; Cojocaru, O; Lalau, I; Palade, C; Slav, A; Lepadatu, AM; Lazanu, S; Stoica, T; Ciurea, ML

Published: 2019, 2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, 40, DOI:

9. Enhanced photocurrent in GeSi NCs/TiO2 multilayers
Authors: Palade, C; Slav, A; Cojocaru, O; Teodorescu, VS; Lazanu, S; Stoica, T; Sultan, MT; Svavarsson, HG; Ciurea, ML

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 76, DOI:

10. Enhanced photocurrent in GeSi NCs / TiO2 multilayers
Authors: Palade, C; Slav, A; Cojocaru, O; Teodorescu, VS; Lazanu, S; Stoica, T; Sultan, MT; Svavarsson, HG; Ciurea, ML

Published: 2018, , DOI:

11. MOS DOSIMETER BASED ON Ge NANOCRYSTALS IN HfO2
Authors: Palade, C; Slav, A; Lepadatu, AM; Stavarache, I; Dascalescu, I; Cojocaru, O; Stoica, T; Ciurea, ML; Lazanu, S

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 90, DOI:

12. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Authors: Palade, C; Lepadatu, AM; Slav, A; Cojocaru, O; Iuga, A; Maraloiu, VA; Moldovan, A; Dinescu, M; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: , JOURNAL OF MATERIALS CHEMISTRY C, DOI: 10.1039/d1tc02921e

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