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Dr. Ovidiu COJOCARU

Scientific Researcher

Laboratory of Atomic Structures and Defects in Advanced Materials (LASDAM)

ovidiu[DOT]cojocaru[AT]infim[DOT]ro
Keywords: DFT computations, (photo)electrical measurements

Education

2019 - 2023       Doctoral School in Physics - Condensed Matter Physics

                              University of Bucharest, Romania

2017 - 2019           Master - Physics of Advanced Materials and Nanostructures

                              Faculty of Physics, University of Bucharest, Romania

Positions

dec 2023 - present          Scientific Researcher - National Institute of Materials Physics

                                            Group of “Nanomaterials and Nanostructures based on SiGeSn”

apr 2018 - nov 2023       Research Assistant - National Institute of Materials Physics

                                           Group of “Nanomaterials and Nanostructures based on SiGeSn”

 

 

Research interests

Electrical and photoelectrical properties of films and multilayers of SiGeSn nanocrystals embedded in oxides (TiO2, HfO2, ZrO2, SiO2); memory properties of floating gate memories with SiGeSn nanoparticles / nanocrystals in HfO2 and Al2O3; ferroelectric properties of orthorhombic HfO2 / ZrO2 based structures

Expertize

Electrical and photoelectrical measurements; UV-Vis-NIR spectroscopy; ab initio computations for electronic structure properties of Si-Ge-Sn based nanocrystals or superlattices and polarization of orthorhombic HfO2 based materials

Publications

1. SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors
Authors: Palade, C; Slav, A; Cojocaru, O; Teodorescu, VS; Stoica, T; Ciurea, ML; Lepadatu, AM

Published: MAR 2022, COATINGS, 12, 348, DOI: 10.3390/coatings12030348

2. Bandgap atomistic calculations on hydrogen-passivated GeSi nanocrystals
Authors: Cojocaru, O; Lepadatu, AM; Nemnes, GA; Stoica, T; Ciurea, ML

Published: JUN 30 2021, SCIENTIFIC REPORTS, 11, DOI: 10.1038/s41598-021-92936-z

3. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Authors: Palade, C; Lepadatu, AM; Slav, A; Cojocaru, O; Iuga, A; Maraloiu, VA; Moldovan, A; Dinescu, M; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: SEP 28 2021, JOURNAL OF MATERIALS CHEMISTRY C, 9, 12366, DOI: 10.1039/d1tc02921e

4. Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories
Authors: Stavarache, I; Cojocaru, O; Maraloiu, VA; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: MAR 15 2021, APPLIED SURFACE SCIENCE, 542, DOI: 10.1016/j.apsusc.2020.148702

5. Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe-TiO2 Films and Multilayers
Authors: Lepadatu, AM; Palade, C; Slav, A; Cojocaru, O; Maraloiu, VA; Iftimie, S; Comanescu, F; Dinescu, A; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: NOV 12 2020, JOURNAL OF PHYSICAL CHEMISTRY C, 124, 25053, DOI: 10.1021/acs.jpcc.0c06290

6. SWIR photoresponse of SiGe/TiO2 multilayers with Ge-rich SiGe nanocrystals
Authors: Lepadatu, AM; Palade, C; Slav, A; Dascalescu, I; Cojocaru, O; Iftimie, S; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: 2020, CAS 2020 PROCEEDINGS: 2020 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 238, DOI:

7. High performance NIR photosensitive films of Ge nanoparticles in Si3N4
Authors: Stavarache, I; Prepelita, P; Lalau, I; Cojocaru, O; Teodorescu, VS; Ciurea, ML

Published: 2019, 2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, 228, DOI:

8. Controlling SWIR photosensitivity limit by composition engineering: from Ge to GeSi nanocrystals embedded in TiO2
Authors: Dascalescu, I; Cojocaru, O; Lalau, I; Palade, C; Slav, A; Lepadatu, AM; Lazanu, S; Stoica, T; Ciurea, ML

Published: 2019, 2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, 40, DOI:

9. Enhanced photocurrent in GeSi NCs/TiO2 multilayers
Authors: Palade, C; Slav, A; Cojocaru, O; Teodorescu, VS; Lazanu, S; Stoica, T; Sultan, MT; Svavarsson, HG; Ciurea, ML

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 76, DOI:

10. Enhanced photocurrent in GeSi NCs / TiO2 multilayers
Authors: Palade, C; Slav, A; Cojocaru, O; Teodorescu, VS; Lazanu, S; Stoica, T; Sultan, MT; Svavarsson, HG; Ciurea, ML

Published: 2018, , DOI:

11. MOS DOSIMETER BASED ON Ge NANOCRYSTALS IN HfO2
Authors: Palade, C; Slav, A; Lepadatu, AM; Stavarache, I; Dascalescu, I; Cojocaru, O; Stoica, T; Ciurea, ML; Lazanu, S

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 90, DOI:

12. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Authors: Palade, C; Lepadatu, AM; Slav, A; Cojocaru, O; Iuga, A; Maraloiu, VA; Moldovan, A; Dinescu, M; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: , JOURNAL OF MATERIALS CHEMISTRY C, DOI: 10.1039/d1tc02921e

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