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Sara LAAFAR

Assistant Researcher

Laboratory of Complex Heterostructures and Multifunctional Materials

sara[DOT]laafar[AT]infim[DOT]ro

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Dr. Sara LAAFAR, Assistant researcher (since 2023), born in 1990, graduated from the Faculty of Sciences Ben M’Sik – Specialisation Network and Telecommunications at Hassan II University Casablanca, Morocco, has a MSc degree in Network and Telecommunications at Chouaib Doukkali University, Faculty of Science, El Jadida, Morocco, and a PhD degree in Electrical Engineering, Power Electronics at Cadi Ayyad University, Faculty of Sciences and Technologies, Marrakech, Morocco (2021). Work experience: National Institute of Materials Physics (NIMP) (2023– to date); Eugen Ionescu doctoral and postdoctoral scholarship (2018 and 2022) at NIMP, financed by Agence Universitaire de Francophonie (AUF). Main areas of interest/expertise: Preparation of semiconductor thin films by RF magnetron sputtering, fabrication of electronic devices in cleanroom conditions, and transistor Modelling and Simulation Using PSpice. Publications (last updated October 2025): 9 articles published in Web of Science® (WoS) journals with impact factor (e.g. Analog Integr. Circ. Signal Process., Ceram. Int., J. Alloy. Compd., Engineering Letters), Hirsch index: 3, Citations (without self-citations): 36. Professional profile web-links: Brainmap: https://www.brainmap.ro/sara-laafar; ORCID ID: https://orcid.org/0000-0002-0424-6177 ; WoS ResearcherID: OHU-1057-2025 .

 

Publications

1. Impact of the external gate resistance on the power CoolMOS transistor transient switching dynamics
Authors: Laafar, S; Boumaaz, N; Elbacha, A; Lamuadni, B; Maali, A; Soulmani, A

Published: AUG 28 2025, ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 125, 9, DOI: 10.1007/s10470-025-02487-w

This study covers three complementary aspects; it focuses first on analyzing the turn-on and turn-off processes of the power CoolMOS transistor and investigating its switching times. Furthermore, it expands the scope of our previous works by validating the dynamic behaviour of the proposed model of the power CoolMOS transistor and it assesses the influence of the external gate resistance on the device's switching performance. Simulation results for the switching characteristics were verified through experimental measurements. An experimental test was carried out using a resistive load circuit with different external gate resistance values to analyze its impact on the device's switching behavior. The findings confirm the accuracy of the conclusions drawn from the theoretical and simulation analyses presented in this paper.
Open Access
2. Reticulated mesoporous TiO2 scaffold for self-cleaning surfaces
Authors: Besleaga, C; Tomulescu, AG; Zgura, I; Stepanova, A; Galca, AC; Laafar, S; Zorila, FL; Alexandru, M; Pintilie, I; Iliescu, M

Published: NOV 1 2024, CERAMICS INTERNATIONAL, 50, DOI: 10.1016/j.ceramint.2024.08.072

Interest in self-cleaning coatings is rising due to their potential to enhance comfort and quality of life in polluted urban environments, driving the search for materials with optimal physical properties. Convergent with this goal, this study investigates the wetting properties and photo-catalytic efficiency of reticulated TiO2 layers. It shows that these properties are significantly influenced by the topographical characteristics of the TiO2 surface, which can be precisely controlled through variations in pulverization pressure and low-temperature post-annealing treatments. Post-deposition annealing of the TiO2 layers achieves 100 % self-cleaning efficiency for both thick and thin films, with optical transmission ranging from approximately 60 %-80 % in the visible spectrum. Additionally, the TiO2 layers exhibited promising capabilities for eliminating pathogenic microorganisms and disinfecting surfaces. The underlying causal factors of these remarkable and technologically promising surface features are explored and discussed.
3. Efficient Iterative Reconstruction Method for Randomly Sampled Multi-Band Signals
Authors: Semlali, H; Boumaaz, N; Maali, A; Laafar, S; Soulmani, A; Ghammaz, A; Diouris, JF

Published: NOV 1 2024, ENGINEERING LETTERS, 32, DOI:

Random sampling provides several benefits for multi-band signals compared to uniform sampling case. These benefits include greater sample frequency flexibility, fewer restrictions on signal filtering, and, in the case of stationary sampling sequences, a decrease or suppression of spectrum aliases. This makes random sampling a preferred option in Software Defined Radio (SDR) systems, which face the challenge of supporting different standards with different sampling frequencies. However, the task of reconstruction becomes more complex with random sampling. In the literature, various reconstruction techniques are provided. In this paper, we focus on employing the ADPW-CG iterative method to address the reconstruction issue with randomly sampled signals within an SDR system context. The effectiveness of the proposed algorithm is evaluated in terms of complexity, reconstructed signal quality, and robustness, and robustness and the findings is compared with the performance of the SVD direct algorithm and other iterative methods. Based on the obtained results, we observed that the proposed approach demonstrates promising performance in comparison to other algorithms.
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