Photodetectors with GeSn nanocrystals in Si3N4 matrix highly photosensitive from 0.5 µm to 2.4 µm (GeSnPhotoSiNdet)


Project Director: Dr. Ionel STAVARACHE
Contract ID: cod PN-III-P1-1.1-TE-2021-1491
Project Director: Dr. Ionel Stavarache
Project Type: National
Project Program: Program 1 - Development of the national CD system;
Funded by: Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii - UEFISCDI
Contractor: National Institute of Materials Physics (NIMP)
Contract no.: TE 71 / 2022
Status: In progress
Data de inceput: May 15st, 2022
Data finalizarii: May 14st, 2024
The project goal is to fabricate a demonstrator for photodetector device with GeSn-nps (top contact/GeSn-nps:Si3N4/Si and/or quartz substrate/bottom contact), having targeted parameters: photocurrent to dark current ratio at least 2 orders of magnitude, fast photoresponse time:μs, spectral window extended toward 2.4 µm, high responsivity and good detectivity characteristics. We propose a new and original approach, by using an active layer that give an extended spectral limit in SWIR due to Si3N4 properties to induce a tensile strain in film. This consists in co-deposition or multilayer of different GeSn compozition and content in Si3N4. Objectives: O1: Fabrication by MS of the structure, GeSn-nps:Si3N4/ Si or quartz substrate, by using different novel approaches. For this, the critical deposition parameters (target power, work pressure, gas flux or substrate temperature) will be finely tuned to be optimized. O2: Formation of the GeSn-nps in Si3N4 matrix with controlled morphology (size, uniformity and density); O3: Developing the test samples with photoconductive properties controlled by morphology, completely characterized; O4: Obtaining the demonstrator of the photodetector device having targeted parameters, functionally tested according to TRL 3. Dissemination of the results: 1 patent, 3 ISI-quoted journals, 2 contributions to conferences and web page.

The project goal is to fabricate a demonstrator for photodetector device based on crystalline GeSn nanoparticles (top contact/ GeSn-nps:Si3N4/ Si and/or quartz substrate/ bottom contact), having targeted photodetector parameters as: - photocurrent / dark current ratio at least 2 orders of magnitude; - fast photoresponse time: μs; - spectral window extended (toward 2.4 μm) to short-wave infrared (SWIR); - high responsivity and - good detectivity characteristics.

Dr. Ionel Stavarache

Dr. Ana-Maria Lepadatu

Dr. Catalin Palade

Dr. Ioana-Maria Avram Dascalescu

Dr. Adrian Slav

Drd. Mihalcea Catalina-Gabriela

Dr. Catalin Negrila

Drd. Ovidiu Cojocaru

1) Extended near infrared photo-response influenced by host matrix change in Ge nanoparticle-based films, I. Stavarache, C. Palade, A. Slav, P. Prepelita, V. S. Teodorescu, M. L. Ciurea, 45th Edition of International Semiconductor Conference (CAS), pp. 231-234, 2022 October 12-14, Sinaia, Romania; IEEE Catalog Number: CFP22CAS-USB;
ISBN: 978-1-6654-5253-3

1) Extended near infrared photo-response influenced by host matrix change in Ge nanoparticle-based films, I. Stavarache, C. Palade, A. Slav, P. Prepelita, V. S. Teodorescu, M. L. Ciurea, 45th Edition of International Semiconductor Conference (CAS), pp. 231-234, 2022 October 12-14, Sinaia, Romania; IEEE Catalog Number: CFP22CAS-USB;
ISBN: 978-1-6654-5253-3

Ph.D. Ionel Stavarache

National Institute of Materials Physics,

405A Atomistilor Street, Magurele, Ilfov, PO BOX MG-7, 077125

e-mail: stavarache@infim.ro

Romania


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