Publications

Mn-Zn ferrites substituted with Ti4+ ions are now becoming commercially important. The substitution with titanium ions in Mn-Zn ferrite is recommended for ferrites with low losses and low temperature factor of initial permeability, T-k/mu(i) because of the shift of the secondary maximum of permeability, SMP, towards lower temperatures [1] and the increase of the d.c.resistivity [3,4,5]. The present paper reports the results obtained by substitution of a small amount of titamium ions to high permeability ferrite Mn0.51Zn0.43Fe0.062+Fe2O4, by adequate reduction of Zn2+ content. The magnetic and electric properties improve: d.c. electrical resistivity increases while the loss factor tg delta/mu(i) and disaccommodation decrease. By addition of 0.35% by weight TiO2 the initial permeability, at 20 degrees C, improves.. We remark the flattening of mu(i)(T) curves with the increase of content of Ti4+ ions and the diminution of the peak at the Curie point, facts that can be associated with two points of anisotropy compensation instead of one, the second minimum of K-1 being in the neighborhood of T-c. Structural and magnetic properties of high permeability ferrite with substitution of titanium ions confirm thar Ti(4+)ions make pairs with Fe2+ ions.[4,6].

The present paper reports the magnetic and structural properties of manganese -zinc ferrites obtained by the addition of small amount of Nb2O5 (0.03-0.1%g). For power applications of Mn-Zn ferrite it is necessary to have the Secundary Maximum of Permeability (SMP) and correspondingly low losses, in the domain of positive temperature, 50-100 degrees C. The magnetic properties: initial permeability, power losses, temperature factor of permeability and T-c improve by the addition of 0.03-0.07%g Nb2O5 to the Mn-Zn ferrite.Magnetic and structural results: XRD, SEM2+EDX analysis, suggest that Nb5+ ions partially dissolve in the ferrite lattice, substituting Fe3+ octahedral and loosely bounding Fe2+ ions.

Binary rare-earth ceria-ytterbia and ceria-dysprosia and pure CeO2 have been subjected to CO2-laser irradiation. All the samples have been prepared by precipitation and controlled drying. Irradiated samples as well as the samples calcinated at 1273 K have been studied using TG-DTA, TEM and SAED, WAXS and FT-IR. Introduction of a second rare-earth oxide, like ytterbia or dysprosia led to an important increase of 'stability' towards the CO2-laser irradiation. Thermal investigation of these samples revealed in fact a 'metastability' because, for the temperatures of about 500 K, a release of oxygen has been observed. This behaviour could recommend CO2-laser irradiation as a possible alternative for activation of the oxidation catalysts.

The average density of zeros for monic generalized polynomials, P-n(z)=phi(z)+Sigma(k=1)(n)c(k)f(k)(z), With real holomorphic phi, f(k) and real Gaussian coefficients is expressed in terms of correlation functions of the values of the polynomial and its derivative. We obtain compact expressions For both the regular component (generated by the complex roots) and the singular one (real roots) of the average density of roots. The density of the regular component goes to zero in the vicinity of the real axis like \Im z\. We present the low- and high-disorder asymptotic behaviors. Then we particularize to the large-n limit of the average density of complex roots of monic algebraic polynomials of the form P-n(z)=z(n)+Sigma(k=1)c(k)z(n-k) with real independent, identically distributed Gaussian coefficients having zero mean and dispersion delta=1/root n lambda. The average density tends to a simple, universal function of xi=2n log \z\ and lambda in the domain xi coth(xi/2) much less than n \sin arg(z)\, where nearly all the roots are located for large n.

PbS films were chemically deposited on poled and unpoled ferroelectric ceramic substrates and on glass. The sensitivity of the PbS thin films and the concentration of trapping centers inside these films depend on the nature of the substrate and, in the case of poled ferroelectric substrates, depend on the polarity of the ferroelectric polarization as well. A considerable enhancement of the photoconductive signal at liquid nitrogen temperature was found in the case of PbS films deposited on the positive face of a poled ferroelectric substrate. (C) 1997 Elsevier Science S.A.

Infrared photoconductive detectors were prepared from three undoped n-type InSb single crystals with different electron concentration and mobility values. The single crystals were grown by the Czochralski method. The spectral responsivity and spectral detectivity of the detectors were determined as functions of the power dissipation density of the device. A remarkable improvement in performance was observed for the purest specimen in comparison with earlier reported data. (C) 1997 Elsevier Science S.A.

The frequency characteristic of the transverse photoelectric signal of a three electroded PbS/ferroelectric heterostructure is analyzed in this paper. The ferroelectric material is a lead titanate-zirconate ceramic obtained by hot pressing. It was found that the frequency characteristic of this signal is similar to a high-pass filter and depends on the properties of the ferroelectric substrates on which the PbS film was deposited, An equivalent circuit was proposed comparing the studied heterostructure with a metal-oxide semiconductor (MOS) structure. The circuit elements were determined fitting the obtained formula for the output signal with the experimental data. Some of the circuit elements were determined experimentally using various measuring techniques. It was found that the experimentally determined values are close to the theoretically determined values. The studied heterostructure can be changed into a band-pass filter adding some external circuit elements such as resistors and capacitors.

Pseudo-ternary magnetic compounds Y3Co11-xFexB4 (x = 2, 4, 5 and 6) were studied by Fe-57 Mossbauer spectroscopy at 293 and 4.2 K. The effect of Fe substitution on the hyperfine parameters and site preference is reported.

Cadmium sulphide (CdS) thin films were deposited on glass substrates using the homogeneous precipitation technique and different cadmium salts. The structure of the films was analysed using scanning electron microscopy (SEM). Thermally stimulated current (TSC) measurements had revealed the existence of several trapping levels in as deposited and annealed films. The activation energy of these traps was determined from TSC measurements. The following values were found for CdS films deposited from cadmium acetate: E-1 = 0.3 eV; E-2 = 0.45 eV, E-3 = 0.51 eV. For CdS films deposited from cadmium chloride several trapping levels were found with the activation energies between 0.04 and 0.33 eV. A considerable enhancement of photoconduction after annealing in air was found. The experimental results were explained considering a sensitizing process due to the chemisorbtion of the oxygen. (C) 1997 Elsevier Science S.A.

Semiconductor heterostructures with prescribed energy dependence of the transmittance can be designed by combining: a) Pade approximant reconstruction of the S-matrix; b) inverse scattering theory for Schrodinger's equation; c) a unitary transformation which takes into account the variable mass effects. The resultant continuous concentration profile can be digitized into an easily realizable rectangular-wells structure. For illustration, we give the specifications of a 2 narrow band-pass 12-layer AlcGa1-cAs filter with the high-energy peak more than twice narrower than the low-energy one.