Alexandru IANCU

Spin asymmetry is detected in clean Pt(001)-hex by spin-resolved photoelectron spectroscopy even in absence of external sample magnetization. Magnetization of the sample immediately after preparation yields a consistent remnant spin asymmetry in the direction of the applied magnetic field. The surfaces were also characterized by low energy electron diffraction, scanning tunneling microscopy and high resolution core level x-ray photoelectron spectroscopy, allowing one to quantify the surface component, attributed to the last surface layer enriched in electrons. The explanation of the spin asymmetry induced by electron accumulation into the last monolayer is sketched by using band ferromagnetism criteria. The orientation of the spin asymmetry in the nonmagnetized sample coincides with the direction of the rows of the hex reconstruction, while in the magnetized sample it is aligned with the direction of the external magnetizing field. A strong variation of the spin asymmetry as function of the binding energy near the Fermi level, whose amplitude depends also on the median emission angle, suggests a spin textured state in this energy range or the presence of a Stoner gap

Recently, spin asymmetry in O 2p related deep valence states was evidenced in SrTiO3(001) [Popescu et al., Phys. Scr. 99(10), 105925 (2024)]. In this work, we report the detection of a much higher (about four times) spin asymmetry in SrTiO3(011) by spin resolved photoelectron spectroscopy, with samples characterized also by core level x-ray photoelectron spectroscopy and low energy electron diffraction. The explanation of a so important spin asymmetry is related to the partial neutralization of O-2(4-) or SrTiO(4+) end layers. Missing electrons from O 2p states in the case of O-2 terminations enable robust atomic spins, according to Hund's rule. The parallel analysis of core level shifts for surface atoms and the amplitude of spin asymmetry suggests that 50% of the oxygens from the surface SrO layer of SrTiO3(001) have a 2p(5) configuration with an unpaired electron (the rest are in a 2p(6) configuration), while in the case of O-2 terminated SrTiO3(011), about 50% of surface oxygens have a 2p(5) configuration and 50% of surface oxygens are neutral (2p(4)), yielding a net charge per O-2 surface unit cell of (-1) instead of (-4). The magnetization is oriented along the rows formed by the (4 x 1) reconstruction in the 011 in-plane direction. (c) 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(https://creativecommons.org/licenses/by/4.0/).

Hafnium oxide (HfO2) thin films were deposited on n-type gallium arsenide (GaAs) substrates by Oxide-Molecular Beam Epitaxy (Oxide-MBE) method using Hafnium (Hf) metallic flow in an oxidizing atmosphere of 10-6 mbar molecular oxygen. The Hf metallic flow was provided by an e-beam evaporator and a deposition rate 10 nm/h was established. Semiconductor surface preparation was done prior to deposition, beginning with chemical wet etching and aggressively adjusted by in treatments until a desired stoichiometry was reached. Heterojunctions with HfO2 thin layers of 1 nm, 3 nm, 10 nm and 20 nm were fabricated. X-Ray Photoelectron Spectroscopy (XPS) and ARXPS(Angle Resolved XPS) in-situ analyses provided a clear picture of the structure of the interfaces, the chemical bonds and composition. The interfaces are chemically stable and abrupt. A small amount of Ga2O3 provides a passivating effect of the semiconductor surface. The electrical properties of the heterostructures were determined using the Kraut method and Reflection Electron Energy Loss Spectroscopy (REELS) technique. Band offsets Delta EC=1.75 eV and Delta EV=2.62 eV confirm a high application potential. Additionally, data on the morphology and continuity of the layers were obtained by Atomic Force Microscopy (AFM) technique while the amorphous growth was monitored by XRD(X-ray Diffraction), GIXRD (Grazing Incidence XRD) and XRR(X-ray Reflectivity) measurements. The dielectric layers showed values of the constant k in the range of 19-22, established by electrical measurements on MOS capacitors.

Adsorption and desorption of ethylene on BaO-terminated (001) barium titanate are investigated by X-ray photoelectron spectroscopy. Carbon is found in an oxidized state, at a binding energy similar to that resulting from CO adsorption on BaTiO3(001). The amount of carbon adsorbed on the surface is also similar to the case of CO/BaTiO3(001). Upon heating the substrate up to the loss of its ferroelectric polarization, the C 1s signal from the oxidized spectral region vanishes. At the same time, there was no noticeable oxygen depletion of the surface after repeated C2H4 adsorption and desorption. The substrate remains stable after repeated oxidative adsorption and desorption of ethylene. Desorption occurs at different temperatures, depending on the adsorption temperature, which suggests different adsorption geometries: non-dissociated adsorption at high temperature with ethylene bond on two surface oxygen atoms, and locally dissociated adsorption at lower temperatures, in "formaldehyde-like" local configurations.

Carbon dioxide (CO2) is reversibly adsorbed and desorbed from ferroelectric (001) oriented, BaO-terminated barium titanate, as revealed in real time by high resolution and ultrafast photoelectron spectroscopy and certified by low energy electron diffraction. Desorption proceeds when the substrate is heated above its Curie temperature. The amount of CO2 adsorbed is derived to be between one molecule for a surface BaO unit cell (adsorption below room temperature) and one molecule for two unit cells (adsorption above room temperature). The molecule is bound with its carbon to surface oxygen, forming a CO3 structure. The BaTiO3(001) surface is unaffected by repeated cycles of adsorption-desorption. The relatively high amount of CO2 adsorbed and the stability of the substrate after repeated adsorption and desorption processes promotes barium titanate as a promising candidate for decarbonization technologies.

Carbon monoxide (CO) is reversibly adsorbed on and desorbed from ferroelectric (001) oriented, BaO-terminated barium titanate. All processes are characterized in real time via photoelectron spectroscopy. Adsorption proceeds on different sites/geometries as a function of substrate temperature. Below room temperature, CO is adsorbed on surface Ba. At room temperature, adsorption proceeds on surface oxygen, whereas at high temperatures, "hollow" site adsorption occurs with carbon coordinated with three oxygens, one oxygen initially belonging to CO and two oxygens from the substrate. The amount of CO adsorbed is about one molecule for 10 surface unit cells, which is slightly increased at low temperatures. CO is desorbed if the substrate is heated above the Curie temperature, which is a sign of the definitory role of ferroelectric polarization. The BaTiO3(001) surface is unaffected by repeated cycles of adsorption-desorption.