In this work, the effects of 60Co y -ray irradiation on high resistivity p -type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and 2 MGy. Both macroscopic (I-V, C-V) and microscopic investigations, by means of Thermally Stimulated Current (TSC) and Deep Level Transient Spectroscopy (DLTS) techniques, were conducted to characterize the radiation -induced changes. The investigated diodes were manufactured on high resistivity p -type Float Zone (FZ) silicon and were further classified into two types based on the isolation technique between the pad and guard ring: p -stop and p -spray. After irradiation, the macroscopic results of current-voltage and capacitance-voltage measurements were obtained and compared with existing literature data. Additionally, the microscopic measurements focused on the development of the concentration of different radiation -induced defects, including the Boron interstitial -Oxygen interstitial (BiOi) complex, the Carbon interstitial -Oxygen interstitial (CiOi) defect, the H40K, and the so-called I*P. To investigate the thermal stability of induced defects in the bulk, isochronal annealing studies were performed in the temperature range of 100 degrees C to 300 degrees C. These annealing processes were carried out on diodes irradiated with doses of 1 and 2 MGy. Furthermore, in order to investigate the unexpected results observed in the C-V measurements after irradiation with high dose values, the surface conductance between the pad and guard ring was measured as a function of both dose and annealing temperature.

The acceptor removal process is the most detrimental effect encountered in irradiated boron-doped silicon. This process is caused by a radiation-induced boron-containing donor (BCD) defect with bistable properties that are reflected in the electrical measurements performed in usual ambient laboratory conditions. In this work, the electronic properties of the BCD defect in its two different configurations (A and B) and the kinetics behind transformations are determined from the variations in the capacitance-voltage characteristics in the 243-308 K temperature range. The changes in the depletion voltage are consistent with the variations in the BCD defect concentration in the A configuration, as measured with the thermally stimulated current technique. The A & RARR;B transformation takes place in non-equilibrium conditions when free carriers in excess are injected into the device. B & RARR;A reverse transformation occurs when the non-equilibrium free carriers are removed. Energy barriers of 0.36 eV and 0.94 eV are determined for the A & RARR;B and B & RARR;A configurational transformations, respectively. The determined transformation rates indicate that the defect conversions are accompanied by electron capture for the A & RARR;B conversion and by electron emission for the B & RARR;A transformation. A configuration coordinate diagram of the BCD defect transformations is proposed.

In this work, the thermally stimulated current (TSC) technique has been used to investigate the properties of the radiation-induced interstitial boron and interstitial oxygen defect complex by 23-GeV (E-kin) protons, including activation energy, defect concentration, as well as the annealing behavior. At first isothermal annealing (at 80 degrees C for 0-180 min) followed by isochronal annealing (for 15 min between 100 degrees C and 190 degrees C in steps of 10 degrees C), studies had been performed in order to get information about the thermal stability of the interstitial boron and interstitial oxygen defect in 50-Omega cm material after irradiation with 23-GeV protons to a fluence of 6.91 x 10(13) p/cm(2). The results are presented and discussed. Furthermore, the extracted data from TSC measurements are compared with the macroscopic properties derived from current-voltage and capacitance-voltage characteristics. In addition, the introduction rate of interstitial boron and interstitial oxygen defect as a function of the initial doping concentration was determined by exposing diodes with different resistivities (10, 50, 250, and 2 k Omega cm) to 23-GeV protons. These results are compared with data from TSC and deep-level transient spectroscopy measurements achieved by the team of the CERN-RD50 "Acceptor removal project."

Embedding electronic and optoelectronic devices in common, daily use objects is a fast developing field of research. New architectures are needed for migrating from the classic wafer- based substrates. Novel types of flexible PMMA/Au/Alq(3)/LiF/Al structures were obtained starting from electrospun polymer fibers. Thus, using an electrospinning process poly (methyl metacrylate) (PMMA) nanofibers were fabricated. A thin Au layer deposition rendered the fiber array conductive, this being further employed as the anode. The next steps consisted of the thermal evaporation of tris(8-hydroxyquinolinato) aluminum (Alq(3)) and aluminum deposition as the cathode. The Au covered PMMA nanofiber layer had a similar behavior with an indium tin oxide film i.e. low sheet resistance 10.6 omega/sq and high transparency. The low electrode resistivities allow an electron drift mobility of about 10(-6) cm(2) V-1 s(-1) at a low applied field, similar to the counterpart structures based on thin films. Concerning the relaxation processes in these structures, the Cole-Cole plots exhibit a slightly deformed semicircle, indicating a more complex equivalent circuit for the processes between metal electrodes and the active layer. This equivalent circuit includes reactance equivalent processes at the anode, cathode, in the active layer and most probably originates from the roughness of the metallic electrodes.

Phosphate tellurite glasses, with a nominal composition of 40%ZnO+40%P2O5+20%TeO2, have been synthesized by melt quenching procedure. P2O5 can lead to chemically stable phosphate tellurite glasses, compared with those classical synthesized with H3PO4. Magneto-optical measurements have shown a derivative A(1) term centered at 532 nm originating from a transition to a degenerated excited state associated with tellurium colloids. The glass densities, measured by the Archimedes method at room temperature, display an increasing value with the melting temperature of the samples. The electrical conductivity shifts toward lower frequencies with the increased melting temperature, being influenced by the mobile charges, which require lower thermal activation energy due to the Te-o metallic particles. Together with dielectric constant, the electrical conductivity underlines structural changes, by increasing the melting temperature, associated with the presence of Te-o nanoclusters.

The dependencies of the BiOi defect concentration on doping, irradiation fluence and particle type in p-type silicon diodes have been investigated. We evidenced that large data scattering occurs for fluences above 10(12) 1 MeV neutrons/cm(2), becoming significant larger for higher fluences. We show that the BiOi defect is metastable, with two configurations A and B, of which only A is detected by Deep Level Transient Spectroscopy and Thermally Stimulated Currents techniques. The defect' electrical activity is influenced by the inherent variations in ambient and procedural experimental conditions, resulting not only in a large scattering of the results coming from the same type of measurement but making correlation between different types of experiments difficult. It is evidenced that the variations in [BiOiA] are triggered by subjecting the samples to an excess of carriers, by either heating or an inherent short exposure to ambient light when manipulating the samples prior to experiments. For the samples investigated in this work both, the [BiOiA] as determined from electrical spectroscopic measurements and the full depletion voltage as measured from Current-Voltage characteristics reach a steady state in similar to 7h. Any electrical measurement performed before will give a different result. The bi-stable behavior of the BiOi defect fully accounts for these variations.

Tellurium metallic colloids were evidence in the phosphate tellurite glasses obtained by the melt quenching method over 1000 degrees C. The concentration and subsequent color of these glasses strongly depend on the preparation conditions due to the significant differences among the melting point of the component oxides. The presence of Te metallic colloids was evidenced by the magneto-optical measurements at different temperatures, by the shift of the emissions spectra with the excitation wavelength and the thermoluminescence spectra as a result of recombination between the hole centers, created during x-ray irradiation, with the quasi coupled electrons from the surface of the metallic colloids. The peak position in the absorption spectra of these metallic colloids was modeled based on generalized Mie light scattering theory on these metallic structures, taking into account the size and shape of colloids but also the dielectric constant of the phosphate tellurite glasses in which these colloids are embedded.

ZnO-CuxO core-shell radial heterojunction nanowire arrays were fabricated by a straightforward approach which combine two simple, cost effective and large-scale preparation methods: (i) thermal oxidation in air of a zinc foil for obtaining ZnO nanowire arrays and (ii) radio frequency magnetron sputtering for covering the surface of the ZnO nanowires with a CuxO thin film. The structural, compositional, morphological and optical properties of the high aspect ratio ZnO-CuxO core-shell nanowire arrays were investigated. Individual ZnO-CuxO core-shell nanowires were contacted with Pt electrodes by means of electron beam lithography technique, diode behaviour being demonstrated. Further it was found that these n-p radial heterojunction diodes based on single ZnO-CuxO nanowires exhibit a change in the current under UV light illumination and therefore behaving as photodetectors.