Cosmin ISTRATE

Layers of HfO2 and (Hf,Zr)O2 crystalline nano-particles are synthesized via direct liquid injection atomic layer deposition, and a comprehensive set of structural, chemical, and electrical characterizations is employed to elucidate their phase composition and functional behavior. X-ray photoelectron spectroscopy revealed a compositional contrast between the films: (Hf,Zr)O2 layers contained up to 45% stoichiometric oxide, while pure HfO2 films are dominated by sub-oxides, especially under strongly reducing conditions, in which exclusively sub-oxide phases and p-type semiconducting behavior is revealed. Electrical measurements indicated room-temperature stabilization of polar phases and tetragonal-to-orthorhombic phase transition with a Curie temperature near 200 K. FTIR spectroscopy confirmed the presence of tetragonal and orthorhombic HfO2 phases, providing insight into minor features observed approximate to 30 degrees (2 theta) in X-ray diffraction patterns. Notably, devices incorporating an AlN interlayer demonstrated a significant enhancement in pyroelectric performance, suggesting this strategy to advance the pyroelectric performance of HfO2-based materials, supporting their development for lead-free sensor technologies.

Synapses play a vital role in information processing, learning, and memory formation in the brain. By emulating the behavior of biological synapses, electronic synaptic devices hold the promise of enabling high-performance, energy-efficient, and scalable neuromorphic computing. Ferroelectric memristive devices integrate the characteristics of both ferroelectric and memristive materials and present a far-reaching potential as artificial synapses. Here, it is reported on a new ferroelectric device on silicon, a field-effect memristor, consisting of an epitaxial ultrathin ferroelectric Hf(0.5)Z(r0.5)O(2) film sandwiched between an epitaxial highly doped oxide semiconductor SrTiO3-delta and a top metal. Upon a low voltage of less than 2 V, the field-effect modulation in the semiconductor enables to access multiple states. The device works in a large time domain ranging from milliseconds down to tens of nanoseconds. By gradually switching the polarization by identical pulses, the ferroelectric diode devices can dynamically adjust the synaptic strength to mimic short- and long-term memory plasticity. Ionic contributions due to redox processes in the oxide semiconductor beneficially influence the device operation and retention.

Rhombohedral phase HfxZr1-xO2 (HZO, x from 0 to 1) films are promising for achieving robust ferroelectric polarization without the need for an initial wake-up pre-cycling, as is normally the case for the more commonly studied orthorhombic phase. However, a large spontaneous polarization observed in rhombohedral films is not fully understood, and there are also large discrepancies between experimental and theoretical predictions. In this work, in rhombohedral ZrO2 thin films, we show that oxygen vacancies are not only a key factor for stabilizing the phase, but they are also a source of ferroelectric polarization in the films. This is shown experimentally through the investigation of the structural properties, chemical composition and the ferroelectric properties of the films before and after an annealing at moderate temperature (400 degrees C) in an oxygen environment to reduce the V-O concentration compared. The experimental work is supported by density functional theory (DFT) calculations which show that the rhombohedral phase is the most stable one in highly oxygen defective ZrO2 films. The DFT calculations also show that V-O contribute to the ferroelectric polarization. Our findings reveal the importance of V-O for stabilizing rhombohedral ZrO2 thin films with superior ferroelectric properties.

Antiferroelectric random access memory (AFERAM) is one of the newest alternative non-volatile memory technologies to emerge in recent years. ZrO2-based antiferroelectric films are exceptionally well-suited for memory applications with very high cycling endurance (>10(10)) and low operating voltages (< 2 V). Lightly alloying ZrO2 with HfO2 is performed to assess AFERAM device performance with back-end-of-line compatible thin film Zr1-xHfxO2 (x <= 0.13) capacitors. The transition fields associated with antiferroelectric behavior are reduced with more Hf incorporation, yielding a larger magnitude switching polarization and memory window. Cycling endurance beyond 10(10) cycles is conducted on thin film capacitors where wake-up in AFERAM first leads to an increase, then a decrease in the memory window at a cumulative cycle number found to be dependent on the amount of Hf-incorporation. Hf-incorporation into ZrO2 is demonstrated to be a feasible way to improve the memory window in ZrO2-based AFERAM.

As ferroelectric Hf0.5Zr0.5O2 (HZO) thickness scales below 10 nm, the switching characteristics are severely distorted typically showing an antiferroelectric-like behavior (pinched hysteresis) with reduced remanent polarization. Using Landau-Ginsburg-Devonshire (LGD) theory for the analysis of the experimental results, it is shown here that, in thin (5 nm) HZO, depolarization fields drive the system in a stable paraelectric phase coexisting with a metastable ferroelectric one, which explains the pinched hysteresis. This state of matter resembles a first order ferroelectric above the Curie temperature which is known to result in similar double-loop behavior. Here, based on the analysis of experimental data in the framework of LGD theory, it is reported that charge injection and trapping at pre-existing interface defects during field cycling ("wake-up") screens the depolarization field stabilizing ferroelectricity. It is found in particular that a sufficiently large energy density of interface states is beneficial for the recovery of fully open ferroelectric loops. HfO2-based ferroelectric materials have immense technological potential and so significant attention has been given to improve the ferroelectric properties at low-thickness. Here, using Landau Devonshire theory, the authors show the origin of pinched hysteresis loops is connected with the existence of pronounced depolarizing fields which are minimized during field cycling recovering the full ferroelectric loops.

A new core-shell pH-responsive nanocarrier was prepared based on magnetic nanoparticle (MNP) core. Magnetic nanoparticles were first modified with hyperbranched polyglycerol as the first shell. Then the magnetic core was decorated with doxorubicin anticancer drug (DOX) and covered with PEGylated carboxymethylcellulose as the second shell. Borax was used to partially cross-link organic shells in order to evaluate drug loading content and pH-sensitivity. The structure of nanocarrier, organic shell loadings, magnetic responsibility, morphology, size, dispersibility, and drug loading content were investigated by IR, NMR, TG, VSM, XRD, DLS, HR-TEM and UV-Vis analyses. In vitro release investigations demonstrated that the use of borax as cross-linker between organic shells make the nanocarrier highly sensitive to pH so that more that 70% of DOX is released in acidic pH. A reverse pH sensitivity was observed for the nanocarrier without borax cross-linker. The MTT assay determined that the nanocarrier exhibited excellent biocompatibility toward normal cells (HEK-293) and high toxicity against cancerous cells (HeLa). The nanocarrier also showed high hemocompatibility. Cellular uptake revealed high ability of nanocarrier toward HeLa cells comparable with free DOX. The results also suggested that low concentration of nanocarrier has a great potential for use as contrast agent in magnetic resonance imaging (MRI).

Two core-double-shell pH-sensitive nanocarriers were fabricated using Fe3O4 as magnetic core, poly(glycidyl methacrylate-PEG) and salep dialdehyde as the first and the second shell, and doxorubicin as the hydrophobic anticancer drug. Two nanocarriers were different in the drug loading steps. The interaction between the first and the second shell assumed to be pH-sensitive via acetal cross linkages. The structure of nanocarriers, organic shell loading, magnetic responsibility, morphology, size, dispersibility, and drug loading content were investigated by IR, NMR, TG, VSM, XRD, DLS, HRTEM and UV-Vis analyses. The long-term drug release profiles of both nanocarriers showed that the drug loading before cross-linking between the first and second shell led to a more pH-sensitive nanocarrier exhibiting higher control on DOX release. Cellular toxicity assay (MTT) showed that DOX-free nanocarrier is biocompatible having cell viability greater than 80% for HEK-293 and MCF-7 cell lines. Besides, high cytotoxic effect observed for drug-loaded nanocarrier on MCF-7 cancer cells. Cellular uptake analysis showed that the nanocarrier is able to transport DOX into the cytoplasm and perinuclear regions of MCF-7 cells. In vitro hemolysis and coagulation assays demonstrated high blood compatibility of nanocarrier. The results also suggested that low concentration of nanocarrier have a great potential as a contrast agent in magnetic resonance imaging (MRI).

Polarization switching in ferroelectric films is exploited in many applications, such as non-volatile memories and negative capacitance field affect transistors. This can be inhomogeneous or homogeneous, depending on if ferroelectric domains are forming or not during the switching process. The relation between the polarization switching, the structural quality of the films and the negative capacitance was not studied in depth. Here, Pb(Zr0.2Ti0.8)O-3 (PZT) layers were deposited by pulse laser deposition (PLD) and sol-gel (SG) on single crystal SrTiO3 (STO) and Si substrates, respectively. The structural quality was analyzed by X-ray diffraction and transmission electron microscopy, while the electric properties were investigated by performing hysteresis, dynamic dielectric measurements, and piezo-electric force microscopy analysis. It was found that the PZT layers grown by PLD on SRO/STO substrates are epitaxial while the layers deposited by SG on Pt/Si are polycrystalline. The polarization value decreases as the structure changes from epitaxial to polycrystalline, as well as the magnitude of the leakage current and of the differential negative capacitance, while the switching changes from homogeneous to inhomogeneous. The results are explained by the compensation rate of the depolarization field during the switching process, which is much faster in epitaxial films than in polycrystalline ones.

Achieving thermoelectric devices with high performance based on low-cost and nontoxic materials is extremely challenging. Moreover, as we move toward an Internet-of-Things society, a miniaturized local power source such as a thermoelectric generator (TEG) is desired to power increasing numbers of wireless sensors. Therefore, in this work, an all-oxide p-n junction TEG composed of low-cost, abundant, and nontoxic materials, such as n-type ZnO and p-type SnOx thin films, deposited on borosilicate glass substrate is proposed. A type II heterojunction between SnOx and ZnO films was predicted by density functional theory (DFT) calculations and confirmed experimentally by X-ray photoelectron spectroscopy (XPS). Moreover, scanning transmission electron microscopy (STEM) combined with energy-dispersive X-ray spectroscopy (EDS) show a sharp interface between the SnOx and ZnO layers, confirming the high quality of the p-n junction even after annealing at 523 K. ZnO and SnOx thin films exhibit Seebeck coefficients (alpha) of similar to 121 and similar to 258 mu V/K, respectively, at 298 K, resulting in power factors (PF) of 180 mu W/m K-2 (for ZnO) and 37 mu W/m K-2 (for SnOx). Moreover, the thermal conductivities of ZnO and SnOx films are 8.7 and 1.24 W/m K, respectively, at 298 K, with no significant changes until 575 K. The four pairs all-oxide TEG generated a maximum power output (P-out) of 1.8 nW (approximate to 126 mu W/cm(2)) at a temperature difference of 160 K. The output voltage (V-out) and output current (I-ou(t)) at the maximum power output of the TEG are 124 mV and 0.0146 mu A, respectively. This work paves the way for achieving a high-performance TEG device based on oxide thin films.

Structural and electrical properties of epitaxial Pb(Zr0.2Ti0.8)O-3 films grown by pulsed laser deposition from targets with different purities are investigated in this study. One target was produced in-house by using high purity precursor oxides (at least 99.99%), and the other target was a commercial product (99.9% purity). It was found that the out-of-plane lattice constant is about 0.15% larger and the a domains amount is lower for the film grown from the commercial target. The polarization value is slightly lower, the dielectric constant is larger, and the height of the potential barrier at the electrode interfaces is larger for the film deposited from the pure target. The differences are attributed to the accidental impurities, with a larger amount in the commercial target as revealed by composition analysis using inductive coupling plasma-mass spectrometry. The heterovalent impurities can act as donors or acceptors, modifying the electronic characteristics. Thus, mastering impurities is a prerequisite for obtaining reliable and reproducible properties and advancing towards all ferroelectric devices.

Doping SnO2 with trivalent lanthanide (Ln) metals aiming at optical applications faces several challenges. The elastic and electrostatic misfit between bulkier Ln activators and Sn host cation induces strain in the lattice as well as defects as a result of charge-compensation. These effects can be partially healed by thermal annealing. However, dopant segregation which occurs above a certain temperature drives quenching of Ln emission. In this work, we explore Li co-doping as a vehicle to improve the luminescence of lanthanide (Eu, Sm, Er, Dy and, Tb) doped SnO2 nanoparticles. In case of substitutional Ln dopants (Eu, Sm and Er), Li enhances significantly the Ln luminescence up to 40-46 times. The luminescence enhancement induced by Li co-doping is explained by an interplay of removal of nearby oxygen vacancies (Eu, Sm), improved Ln doping homogeneity (Er) and, improved crystallinity (Eu, Sm, Er). The improved crystallinity caused by Li co-doping accounts for less than 30% of the total enhancement. In the case of surface Ln dopants (Dy and Tb), Li co-doping does not alter the Ln emission, either in shape or intensity. Only a few Dy dopants succeed to substitute for Sn in the rutile lattice as shown by single-photon counting investigations. Collectively, our results show that the extent of luminescence enhancement induced by Li co-doping depend strongly on the Ln type. In SnO2, the common mechanisms that explain the Li induced enhancement of Ln luminescence in various hosts, either contribute partially (improved crystallization) or do not contribute at all (local structure distortion).

In this study, nano-BaTiO3 (BTO) powders were obtained via the solvothermal method at different reaction times and were investigated using transmission electron microscopy (TEM), X-ray diffraction (XRD) and Raman spectroscopy. The results were compared with those obtained for a larger crystallite size BTO powder (BTO-m). The sizes of the cuboid crystallites (as determined by XRD and TEM) ranged from about 18 to 24 nm, depending on the reaction time. The evolution with temperature of the structure parameters of nano-BTO was monitored by means of X-ray diffraction and Raman spectroscopy and no signs of phase transition were found up to 170 degrees C. Careful monitoring of the dependence of the XRD peak widths on the hkl indices showed that the effect of the cubic crystallite shape upon the XRD peak widths was buried by the effect of hidden tetragonal line splits and by anisotropic microstrain. The good correlation of the line widths with the tetragonal split amplitudes, observed especially for BTO-m above the transition temperature, indicates tetragonal deformations, as also revealed by Raman spectroscopy. The large anisotropic microstrain shown by the nano-powders, which had a maximum value in the directions, was considered evidence of the phenomenon of surface relaxation of cubic crystallites edged by {100} faces. The observed behavior of the nano-BTO structures with increasing temperature may suggest a correlation between the surface relaxation and tetragonal deformation in the nano-cubes. The experimental results for both nano-BTO and mezoscale-BTO are in agreement with the core-shell model.

Properties of epitaxial PbZr0.2Ti0.8O3 (PZT) films deposited on Si substrates were investigated for integration in the present CMOS technology. Polarization is downward oriented, in association with the presence of an internal electric field, and has a lower value compared to the PZT films deposited on single crystal perovskite SrTiO3 (STO) substrates (40 mu C/cm(2) versus 80 mu C/cm(2)), while the dielectric constant is larger (180 versus 120). Large value for the pyroelectric coefficient was also found, 1.22 x 10(-3)C/m(2)K, as for PZT grown on single crystal STO. The macroscopic ferroelectric and pyroelectric properties appear to be affected by the structural quality and stoichiometry of the PZT film. The changes in the electric properties are an effect of the strain gradients induced by the large difference between the thermal expansion coefficients of PZT and Si substrate, leading in turn to Pb oxidation and antisite defect formation compared to PZT films deposited on STO substrates.

The discovery of ferroelectricity in doped HfO2 represents an excellent opportunity to overcome the obstacles in manufacturing reliable ferroelectric field effect transistors (FeFET) for nonvolatile memory applications, considering that HfO2 is compatible with Si and Ge and it is already used in semiconductor industry. The presence of interface defects may have detrimental effects on the operation of FeFETs, so their role is systematically investigated in this study in correlation with the substrate doping. Metal-ferroelectric-semiconductor (MFS) structures are fabricated by depositing Hf0.5Zr0.5O2 (HZO) layers on n-type Ge substrate. Their electric properties are compared with those of MFS structures obtained by depositing HZO on p-type Ge, to study the influence of the doping. It is found that, although the ferroelectric properties of HZO are similar, the capacitance and impedance of the MFS structures behave differently. For n-Ge, the occupation probability of a large number of low-lying interface defect acceptor states, charges the interface negatively which adversely affects the C-V response of the MFS, albeit without harming the ferroelectric (P-V) hysteresis. Although the interface defects do not harm ferroelectricity, they could inhibit inversion in p-type Ge or accumulation in n-type Ge so they should be taken into account when designing Ge FeFET devices.

Germanium Metal-Ferroelectric-Semiconductor (MFS) capacitors based on ferroelectric Hf1-xZrxO2 (HZO) with clean, oxide free Ge/HZO interfaces emerge as an interesting layer structure for the fabrication of ferroelectric field effect transistor (FeFET) non-volatile memory devices. It is shown that, at low temperature (<160K), a semiconductor depletion forms in Ge near the interface, resulting in an increase in coercive voltage by about 2V, accompanied by a distortion of the ferroelectric hysteresis with subloop asymmetric behavior, which becomes more severe at higher frequencies of measurement. At higher temperatures, the Ge surface near the ferroelectric is easily inverted due to the low energy gap of Ge, providing sufficient screening of the polarization charge by minority free carriers, in which case, nearly ideal, symmetric hysteresis curves are recovered. The depolarization field is experimentally extracted from the coercive voltage and the capacitance measurements, is found to be 2.2MV/cm in the low temperature range, comparable to the coercive field, then rapidly decreases at higher temperatures, and effectively diminishes at room temperature. This makes Ge MFSs good candidates for FeFETs for low voltage non-volatile memory with improved reliability.

In this work, the metal and semiconducting nanoparticles (AgNPs, ZnONPs and AgZnONPs) were phyto-synthesized using aqueous vegetal extracts from: Caryophyllus aromaticus L. (cloves) and Citrus reticulata L. (mandarin) peels. The morphological, structural, compositional, optical and biological properties (antibacterial activity, and cytotoxicity) of the prepared composites were investigated. The most effective sample proved to be AgZnONPs, derived from cloves, with a minimum inhibitory concentration (MIC) value of 0.11 mg/mL and a minimum bactericidal concentration (MBC) value of 2.68 mg/mL. All the other three composites inhibited bacterial growth at a concentration between 0.25 mg/mL and 0.37 mg/mL, with a bactericidal concentration between 3 mg/mL and 4 mg/mL. The obtained composites presented biocidal activity against Staphylococcus aureus, and biocompatibility (on human fibroblast BJ cells) and did not damage the human red blood cells. Additionally, an important result is that the presence of silver in composite materials improved the bactericidal action of these nanomaterials against the most common nosocomial pathogen, Staphylococcus aureus.

This work is focused on the use of multilayer transparent conductive electrode (TCE) based on ZnO/Ag/ZnO in the fabrication of the organic heterostructures. The ZnO/Ag/ZnO obtained combining sputtering/thermal evaporation/sputtering techniques is featured by a good optical transmittance, a low electrical resistivity and a reduced roughness. All these characteristics recommend it as a viable alternative to indium tin oxide (ITO) for different applications. The organic materials, N,N' - diphenyl N,N' - bis (1 - aphthyl) 1,1' - biphenyl 4,4' - diamine (alpha-NPD), 5,12-Dihydro-5-12-dimethylquino [2,3-b]acridine-7,14dione (DMQA) and 4,7 diphenyl-1,10-phenanthroline (BPhen) were deposited by vacuum thermal evaporation (VTE) method, the properties of the obtained layers being investigated by FTIR, UV-VIS and PL) spectroscopy. The I-V characteristic (recorded in dark) of the organic heterostructure fabricated on the ZnO/Ag/ZriO electrode shows diode behavior, revealing its potential applications in the organic light emitting devices (OLED).

The discovery of ferroelectricity in doped HfO2 represents an excellent opportunity to overcome the obstacles in manufacturing reliable ferroelectric field effect transistors (FeFET) for nonvolatile memory applications, considering that HfO2 is compatible with Si and Ge and it is already used in semiconductor industry. The presence of interface defects may have detrimental effects on the operation of FeFETs, so their role is systematically investigated in this study in correlation with the substrate doping. Metal-ferroelectric-semiconductor (MFS) structures are fabricated by depositing Hf0.5Zr0.5O2 (HZO) layers on n-type Ge substrate. Their electric properties are compared with those of MFS structures obtained by depositing HZO on p-type Ge, to study the influence of the doping. It is found that, although the ferroelectric properties of HZO are similar, the capacitance and impedance of the MFS structures behave differently. For n-Ge, the occupation probability of a large number of low-lying interface defect acceptor states, charges the interface negatively which adversely affects the C-V response of the MFS, albeit without harming the ferroelectric (P-V) hysteresis. Although the interface defects do not harm ferroelectricity, they could inhibit inversion in p-type Ge or accumulation in n-type Ge so they should be taken into account when designing Ge FeFET devices.