Novel nanostructured semiconductor materials based on Ge nanoparticles in different oxides for aplications in VIS-NIR photodetectors and nonvolatile memory devices – GENANOPHOTODNVM

Project Director: Dr. Magdalena Lidia CIUREA

Project ID: PN-II-PT-PCCA-2011-3.2-1120

Contract: no. 9/2012

Project Director: Dr. Magdalena Lidia Ciurea

Project Type: National

Project Program: PCCA – Type 2, Joint Applied Research Projects

Funded by: UEFISCDI

Contractor: National Institute of Materials Physics


Project Status: Finished

Start Date: July 2, 2012

End Date: December 31, 2016


Budget: 3.250.500 lei


Project Abstract

The primary aim is to obtain novel nanostructured semiconductor materials based on Ge nanoparticles (nps) with optimized properties to be used in photodetectors for the visible and infrared (VIS-NIR) ranges, and also in nonvolatile (NV) memory devices. This aim will be realized in the following objectives: A) Preparation and characterization of nanostructured films based on Ge nps in SiO2, TiO2, HfO2, with optimized photoconductive and electrical properties; B) Preparation and complex characterization of experimental models for VIS-NIR photodetector and NV memory using the optimized materials; C) Fabrication of VIS-NIR photodetector and NV memory to prove experimentally the concepts of the project and its applications; D) Estimation of the economic impact.
Based on the material research (Phase 1), and on the investigations of structures and experimental models (Phase 2), two prototypes will be fabricated in Phase 3, one for the VIS-NIR photodetector, and one for the NV memory, with corresponding technical specifications. Thus, we will prove that the novel nanostructured materials based on Ge nps obtained in this project are suitable for VIS-NIR photodetectors and NV memory devices. Also, the technical and economical analyses documentation and feasibility studies will be performed (Phase 4).
The two devices will be integrated into a system for event identification and an automated test and measurement system for industrial applications and manufacturing devices will be realized.
The results obtained by achieving the project objectives have a high level of originality and novelty. Therefore, the scientific results will be promoted in 5 papers in peer-reviewed journals, and in 7 communications at prestigious international conferences. The technological results will be the object of 3 patent applications.
Young students will be involved in the project, and this will have a formative effect (Master Dissertations and/or PhD theses).

Project Objective

The primary aim of this project is to obtain novel nanostructured semiconductor materials based on Ge nps with optimized properties to be used in VIS-NIR photodetectors and also in NV memory devices.



Dr. Magdalena Lidia Ciurea - Project Director


Dr. Mircea Dragoman - Responsible of Partner IMT team


Dr. Mihai Balaceanu - Responsible of Partner INOE 2000 team

Partner P3 - INTERNET S.R.L.

Dr. Dragos Vasile Ofrim - Responsible of Partner INTERNET S.R.L. team

Papers in ISI quoted journals:

  1. „Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors”, A.M. Lepadatu, C. Palade, A. Slav, A.V. Maraloiu, S. Lazanu, T. Stoica, C. Logofatu, V.S. Teodorescu, M.L. Ciurea, Nanotechnology 28, 175707 (2017).
  2. „How morphology determines the charge storage properties of Ge nanocrystals in HfO2”, A. Slav, C. Palade, A.M. Lepadatu, M.L. Ciurea, V.S. Teodorescu, S. Lazanu, A.V. Maraloiu, C. Logofatu, M. Braic, A. Kiss, Scripta Mater. 113, 135–138 (2016).
  3. „Non-volatile memory devices based on Ge nanocrystals”, D. Vasilache, A. Cismaru, M. Dragoman, I. Stavarache, C. Palade, A.-M. Lepadatu, M.L. Ciurea, Phys. Status Solidi A 213, 255 (2016).
  4. „Memory properties of Ge nanocrystals-based capacitors with different composition of intermediate layer”, A.-M. Lepadatu, P. Romanian Acad. A . 17, 322–327 (2016).
  5. „Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties”, I. Stavarache, V.A. Maraloiu, P. Prepelita, G. Iordache, Beilstein J. Nanotechnol. 7, 1492 (2016).
  6. „Tuning the properties of Ge and Si nanocrystals based structures by tailoring the preparation conditions”, M.L. Ciurea, A.M. Lepadatu, Dig. J. Nanomater. Bios. 10, 59–87 (2015).
  7. „Nanostructuring of GeTiO amorphous films by pulsed laser irradiation”, V.S. Teodorescu, C. Ghica, A.V. Maraloiu, M. Vlaicu, A. Kuncser, M.L. Ciurea, I. Stavarache, A.M. Lepadatu, N.D. Scarisoreanu, A. Andrei, V. Ion, M. Dinescu, Beilstein J. Nanotechnol. 6, 893–900 (2015).
  8. „Annealing induced changes in the structure, optical and electrical properties of GeTiO2 nanostructured films”, I. Stavarache, A.M. Lepadatu, A.C. Galca, V.S. Teodorescu, M.L. Ciurea, Appl. Surf. Sci. 309, 168 (2014).
  9. „Electrical properties related to the structure of GeSi nanostructured films”, I. Stavarache, A.M. Lepadatu, I. Pasuk, V.S. Teodorescu, M.L. Ciurea, Phys. Status Solidi B 251, 1340 (2014).
  10. „Numerical procedure for optimizing dye-sensitized solar cells”, M.R. Mitroi, L. Fara, M.L. Ciurea, J. Nanomater. 2014, 378981 (2014).
  11. „Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion crystallization process”, A. M. Lepadatu, T. Stoica, I. Stavarache, V.S. Teodorescu, D. Buca, M.L. Ciurea, J. Nanopart. Res. 15, 1981 (2013).
  12. „Transmission electron microscopy study of Ge nanoparticles formed in GeSiO films by annealing in hydrogen”, V.S. Teodorescu, A.V. Maraloiu, I. Stavarache, A.M. Lepadatu, M.L. Ciurea, Dig. J. Nanomater. Bios. 8, 1771–1780 (2013).
  13. „Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2”, I. Stavarache, A.M. Lepadatu, T. Stoica, M.L. Ciurea, Appl. Surf. Sci. 285P, 175–179 (2013).

Patents and patent applications:

  1. OSIM patent no. RO131968-B1, “Matrice capacitiva pentru memorie nevolatila si procedeu de realizare a acesteia”, A. Slav, C. Palade, A.-M. Lepadatu, S. Lazanu, L.M. Ciurea, D. Vasilache, M. Dragoman
  2. OSIM patent no. RO131074-B1, “Structura de capacitor pentru memorie nevolatila pe baza de nanocristale de germanium imersate in dioxid de siliciu”, L.M. Ciurea, I. Stavarache, V.S. Teodorescu
  3. OSIM patent application no. RO132066-A0 (Publ. date 28 Jul 2017), “Structura fotosensibila, pe baza de nanocristale de germaniu imersate in dioxid de siliciu, pentru fotodetectori, si procedeu de realizare a acestora”, I. Stavarache, L.M. Ciurea, V. Maraloiu, V.S. Teodorescu
  4. OSIM patent application no. RO132593-A2 (Publ. date 30 May 2018), “Dispozitiv pentru asistarea cu ioni a cresterii straturilor subtiri depuse prin evaporare in vid cu tun de electroni electrostatic”, I. Pana, V. Braic, A.E. Kiss, M. Braic, A. Vladescu


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