Study of Induced Effects by Defects and Impurities on Optical, Electrical and Electronic Properties of Wide Band Gap Semiconductors
Project Director: Dr. Aurelian Catalin GALCA
Project ID:
PN-II-RU-TE-2011-3-0016 Contract Nr. 19/05.10.2011
Project Director:
Dr. Aurelian-Catalin Galca
Project Type:
National
Project Program:
HUMAN RESOURCES, TE
Funded by:
Romanian National Authority for Scientific Research, UEFISCDI
Contractor:
National Institute of Materials Physics
Project Status:
Finished
Start Date:
Saturday, 1 October, 2011
End Date:
Wednesday, 1 October, 2014
Project Abstract:
The aim of this project is the analysis of wide band gap semiconductor (WBS) thin films by use of non-destructive characterization techniques: ellipsometry, XRD and luminescence. These materials have existing or potential applications in optics and/or electronics. WBS thin films will be obtained by use of different thin films growth methods: pulsed laser deposition, magnetron sputtering, sol-gel and direct growth from colloidal suspension. The influence of defects and impurities on optical, electrical and electronic properties of such materials will be analyzed. The results from presented optical studies will be verified by conventional electrical measurements and structural analysis by electronic microscopy.
The project is focused on 3 types of wide band gap semiconductors: zinc oxide (ZnO) pure or doped with different elements; zinc nitride (Zn3N2) and the intermediary phases during controlled oxidation; and aluminum indium nitride (AlxIn1-xN) pure and doped with Zn. One objective is to grow and to characterize the n-type semiconductors with reproducible properties.
The estimated results will bring new insights regarding the physics phenomena involved in the growth process and the material properties, essential for obtaining viable results. In addition, special activities will be included in the project concerning the correlation between the fundamental knowledge and practical necessities of electronics, and the standardization of the growth of thin films below 200C.
Project Objectives:
The project objectives are:
1) Thin solid films with potential integration in variuos devices
2) Extended thin film characterization; structural, optical and electrical properties of obtained thin films
The extimated results will be quantified by scientific articles published in journal with relatively high impact factor (>1.5).
Regarding the scientific articles, at least 3 articles will result from the activities developed in this project.
role within the project | main expertise | |
dr. Aurelian-Catalin Galca | project manager | ellipsometry |
dr. George Stan | young member / senior researcher | magnetron sputtering |
dr. Lucian Filip | young member / senior researcher | simulations |
dr. Cristina Florentina Chirila (Dragoi) | young member / senior researcher | pulsed laser deposition |
dr. Viorica Stancu | young member / senior researcher | sol-gel deposition |
Cristina Besleaga Stan | young member / junior researcher (ph.d. student) | electrical characterization |
Liliana Marinela Trinca | young member / senior researcher (master student) | wet deposition methods (e.g. sol-gel), targets sintering |
dr. Iuliana Pasuk | senior researcher | X-ray diffraction and X-ray reflectivity |
dr. Mihail Secu | senior researcher | luminescence |
dr. Marin Cernea | senior researcher | wet deposition methods (e.g. sol-gel), targets sintering |
dr. Ioana Pintilie | senior researcher | electrical characterization |
dr. Corneliu Ghica | senior researcher | transmission electron microscopy |
List of Publications:
- Structural and optical properties of c-axis oriented aluminum nitride thin films prepared at low temperature by reactive radio-frequency magnetron sputtering
A.C. Galca, G.E. Stan, L.M. Trinca, C.C. Negrila, L.C. Nistor
Thin Solid Films 524 2012, 328-333 doi:10.1016/j.tsf.2012.10.015
- Structural, optical and dielectric properties of Bi1.5-xZn00.92-yNb1.5O6.92-δ thin films grown by PLD on R plane sapphire andLaAlO3 substrates
- Le Febvrier, A.C. Galca, Y. Corredores, S. Députier, V. Bouquet, V. Demange, X. Castel, R. Sauleau, R. Lefort, Ly. Zhang, G. Tanné, L. Pintilie, M. Guilloux-Viry
ACS Appl. Mat. Interf. 4 (10) 2012, 5227-5233 doi:10.1021/am301152r
- Stoichiometry dependence of the optical properties of amorphous-like Inx−wGawZn1−xO1+0.5x−δ thin films
A.C. Galca, G. Socol, L.M. Trinca, V. Craciun
Appl. Surf. Sci. 281 2013, 96-99, doi:10.1016/j.apsusc.2013.01.176
- Quantitative analysis of amorphous indium zinc oxide thin films synthesized by Combinatorial Pulsed Laser Deposition
- Axente, G. Socol, S. A. Beldjilali, L. Mercadier, C.R. Luculescu, L.M. Trinca, A.C. Galca, D. Pantelica, P. Ionescu, N. Becherescu, J. Hermann, V. Craciun
Appl. Phys. A -Mater. Sci. Process. 117 2014, 229–236, doi:10.1007/s00339-014-8427-y
- Investigation of DC magnetron-sputtered TiO2 coatings: Effect of coating thickness, structure, and morphology on photocatalytic activity
- Daviðsdóttir, R. Shabadi, A.C. Galca, I.H. Andersen, K. Dirscherl, R. Ambat
Appl. Surf. Sci. 313 2014, 677–686, doi:10.1016/j.apsusc.2014.06.047
- Physical properties of AlxIn1-xN thin film alloys sputtered at low temperature
- Besleaga, A.C. Galca, C.F. Miclea, I. Mercioniu, M. Enculescu, G.E. Stan, A.O. Mateescu, V.
Dumitru, S. Costea
- Appl. Phys.116 (16) 2014, 042440, doi:accepted
- Growth evolution of zinc oxide thin films synthesized by magnetron sputtering at low temperature
- Besleaga, A.C. Galca, G.E. Stan, C. Ghica, I. Pasuk
Submitted to J. Phys. D-Appl. Phys.
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