National Institute Of Materials Physics - Romania

Indium-doped tin oxide (ITO) thin films were fabricated by radio frequency magnetron sputtering and were subjected to in-situ and ex-situ annealing, at 200 degrees C, 300 degrees C and 400 degrees C, respectively. The in-situ thermal treatment consisted to intentionally heating the samples' substrates, while the ex-situ annealing was performed using an oven, under ambient atmosphere. For the ITO samples subjected to ex-situ annealing, the density of oxygen vacancies increased leading to the decrease of the electrical resistivity. No significant changes were noticed in terms of transmission spectroscopy after the thermal treatment; while by evaluating the Skewness parameter was determined that the annealing improves the planarity of samples' surface.

MgB2 bulk superconductors are expected to be utilized as rare-earth-free and lightweight trapped field magnets. However, the flux jumps frequently happen during the magnetizing processes, and heavily degrade the field-trapping performances. We have investigated the effect of additives to the MgB2 bulk samples prepared by spark plasma sintering process, and observed various flux jumps during the pulsed field magnetizing processes, which were carried out at 14 K which was obtained by the 2-stage GM cryocooler. The authors classified the flux motions as three categories as "no flux flow", "fast flux flow", and "flux jump" regions, and investigated the conditions where the flux jumps happen. We observed some drastic flux jumps in the pristine and clarified the effect of graphene addition to the flux jumps. The experimental results showed us a possible expansion of no flux jump region, and suggested us the improvement of field trapping capability.

This paper presents the methodology and reports the results concerning the Laser Induced Damage Threshold (LIDT), surface quality and group delay dispersion (GDD) measurements of large aperture femtosecond laser mirrors, achieved in a project funded by IFA under the contract number 02 ELI/18.10.20.17., having, as a main goal, the manufacturing of large aperture mirrors (150mm effective diameter) and tests performing for use in high energy ultra-short pulse laser systems, such as ELI-NP and CETAL infrastructures. The manufacturing process of the mirror substrates was described in a previous paper [1] and the coating technology will be presented in a future article. The novelty of this paper consists, mainly, in the method, experimental arrangement and test procedure to determine the Laser Induced Damage Threshold (LIDT) but also in the entire testing protocol, including Group Delay Dispersion (GDD) and other measurements presented here.

The morphological and structural properties of the poly(vinyl chloride)/graphene oxide (PVC/GO) composites are reported. By the mixture of the two constituents, the PVC/GO composite membranes with a concentration of the GO sheets varying from 0 wt.% to 0.5, 1, 2, 3, 4 and 5 wt.% were prepared. Using scanning electron microscopy (SEM) and the analysis of the atomic force microscopy (AFM) images we observed that as increasing the GO concentration in the PVC mass from 0 wt.% to 5 wt.%, the average surface roughness decreases from 235 mu m to 227 mu m. Using Raman scattering, we report that as increasing the GO concentration in the PVC mass, the ratio between the relative intensities of the Raman lines situated in the spectral ranges 600-650 and 2850-3000 cm(-1) (I600-650/I2850-3000) increases as a consequence of the change of GO carbon atoms hybridization from sp(2) to sp(3). An increase in the number of C-C bonds, simultaneous with the appearance of O-C=O bonds and the decrease of the chlorine concentration, when the GO concentration increases in the PVC weight is reported by X-ray photoelectron spectroscopy (XPS). The down-shift of the main diffraction signal from 24 degrees to 26 degrees when the GO concentration increases in the PVC/GO composite mass from 0 wt.% to 5 wt.%, confirms the incorporation of GO in the polymeric matrix and the modification of the original PVC sample structure. Using transmission electron microscopy (TEM), no agglomerations of the GO structures within the PVC/GO matrix contrast limit were observed.

Polymer Dispersed Liquid Crystal (PDLC) films are composite materials consisting of LC droplets embedded in polymers. In order to decrease the switching voltage of these devices, we prepared PDLC films doped with single wall carbon nanotubes (SWCNTs). The mesomorphic properties of the films were investigated by polarizing optical microscopy (POM). The electrical characteristics have been investigated using a Broadband Dielectric Spectrometer in a frequency domain (0.01-10(7)) Hz and a temperature range (280-350) K. Some key aspects of an optical model for the analysis of the coherent transmittance of PDLC - NP films are presented.

The latest decades presented a large development of various size and types of Unmanned Aerial Vehicles (UAVs). Nowadays, there are over 200 million UAVs used in various applications and there it is a large effort to adopt national and international regulation for using them. There it is a real need for the development of a reliable system for UAVs identity verification that can be implemented and used at global level. To this moment the software-based methods such as MAC address, IDs memorized on devices are prone to a large number of cyber-security vulnerabilities and attacks. This paper presents an innovative hardware-based identification solution which could be adapted to UAVs in a non-intrusive manner. The proposed solution is based on physical unclonable functions (PUF), which are implemented by using memristors. The proposed solution is very low cost and high performance. By using memristors, it is possible to generate a very large number of unclonable IDs, using only a few electrical components. This solution could be incorporated in any UAVs systems without major modifications and not affecting their flight parameters.

In this paper an IGZO memristor with multiple states and analog tuning extended capability is reported. The device has a planar structure and is fabricated by magnetron sputtering on glass substrate. The device resistance could be gradually increased and decreased within the range of one order of magnitude. Larger resistance changes are also possible but they are mostly irreversible. The obtained memristor looks promising to be used as electronic synapse in hardware implemented artificial neural networks or for applications in analog computing and cryptography.

Carbon-Titanium multilayer thin films were obtained by Thermionic Vacuum Arc (TVA) method. The nanostructured films consisting by 100nm Carbon base layer and seven 40nm alternatively Titanium and Carbon layers were deposed on Silicon substrate. As well, to give C-Ti multilayer films with different percentages in Ti and C of layers, a 100nm thick Carbon base layer was deposed on Si substrate, and then seven Ti-C layers, each of these having thickness of 40nm. In order to achieve the successively layers with C, and Ti different percentages, were adjusted the discharge parameters of C and Ti plasma sources to obtain the desired composition of layers. Also, were obtained composite films having a variable C: Ti atomic ratio 9:1 at interface to 1:9 at the surface. By changing of substrate temperature from room temperature to 100 degrees C, 200 degrees C, 300 degrees C, 400 degrees C respectively, and on the other hand the bias potential up to -700V, different batches of samples were obtained. Characterization of structural properties of films was achieved by Electron Microscopy technique (TEM, STEM) and GIXRD techniques. The measurements show that increase of the substrate temperature reveal changes in TixCy lattice parameters. Thus, according to GIXRD analysis it was found out that the Ti:C atomic ratio changes with increase of synthesis temperature. Also, in the case of composite films an increase of amount and sizes of TiC nanocrystals with the increase of energy of Ti ions determined by increase of bias voltage was observed. The tribological measurements were performed using a ball-on-disk system with normal forces of 0.5, 1, 2, 3N respectively. Was found that the coefficient of friction depends on the synthesis temperature and on the bias voltage. It is also noted that the friction coefficient depends on the pure C content, Ti content and amount of TiC nanocrystallites. These results are due to atomic diffusion at Ti/C interfaces and also are associated with amount of TiC nanocrystallites. To characterize the electrical conductive properties, the electrical surface resistance versus temperature have been measured, and then the electrical conductivity is calculated. Using the Wiedemann-Frantz law was obtained the thermal conductivity.

Mixtures of B4C, alpha-AlB12 and B powders were reactively spark plasma sintered at 1800 degrees C. Crystalline and amorphous boron powders were used. Samples were tested for their impact behavior by the Split Hopkinson Pressure Bar method. When the ratio R = B4C/alpha-AlB12 >= 1.3 for a constant B-amount, the major phase in the samples was the orthorhombic AlB24C4, and when R < 1 the amount of AlB24C4 significantly decreased. Predictions that AlB24C4 has the best mechanical impact properties since it is the most compact and close to the ideal cubic packing among the Al-B-C phases containing B-12-type icosahedra were partially confirmed. Namely, the highest values of the Vickers hardness (32.4 GPa), dynamic strength (1323 MPa), strain and toughness were determined for the samples with R = 1.3, i.e., for the samples with a high amount of AlB24C4. However, the existence of a maximum, detectable especially in the dynamic strength vs. R, indicated the additional influence of the phases and the composite's microstructure in the samples. The type of boron does not influence the dependencies of the indicated mechanical parameters with R, but the curves are shifted to slightly higher values for the samples in which amorphous boron was used.

Several technological routes are being investigated for improving the energy storage capability and power delivery of electrochemical capacitors. In this work, ternary hybrid electrodes composed of conducting graphene/reduced graphene oxide (rGO), which store charge mainly through electric double-layer mechanisms, covered by NiO nanostructures, for adding pseudocapacitance, were fabricated through a matrix assisted pulsed laser evaporation technique. The incorporation of multiwall carbon nanotubes (MWCNTs) provokes an increase of the porosity and thus, a substantial enhancement of the electrodes' capacitance (from 4 to 20 F cm(-3) at 10 mV s(-1)). Volumetric capacitances of 34 F cm(-3) were also obtained with electrodes containing just carbon nanotubes coated with NiO nanostructures. Moreover, the use of nitrogen containing precursors (ammonia, urea) for laser-induced N-doping of the nanocarbons also provokes a notable increase of the capacitance. Remarkably, N-containing groups in rGO-MWCNTs mainly add electric double layer charge storage, pointing to an increase of electrode porosity, whereas redox reactions contribute with a minor diffusion fraction. It was also observed that the loading of carbon nanotubes leads to an increase of diffusion-controlled charge storage mechanisms versus capacitive ones in rGO-based electrodes, the opposite effect being observed in graphene electrodes.