National Institute Of Materials Physics - Romania

We report on the characterization of metallurgical phases and their magnetism at the interfaces of nanoscale MgB2/Fe layered structures. MgB2/Fe-57 multilayers with varying layer thicknesses were prepared by vacuum deposition and investigated, before and after annealing by electrical resistance measurements, x-ray diffraction and Fe-57 conversion-electron Mossbauer spectroscopy (CEMS) down to 5 K. Interfacial Fe-B phases, such as Fe2B, were identified by CEMS. A superparamagnetic-to-ferromagnetic transition is observed with increasing Fe-57 film thickness. Ultrahigh vacuum annealing at 500 degrees C of the multilayers leads to strong diffusion of Fe atoms into the boundary regions of the MgB2 layers. MgB2 in the as-grown multilayers is non-superconducting. Structural disorder and the effect of Fe interdiffusion contribute to the suppression of superconductivity in the MgB2 films of all the as-grown multilayers and the thinner annealed multilayers. However, an annealed MgB2/Fe-57/MgB2 trilayer with thicker (500 angstrom) MgB2 layers is observed to be superconducting with an onset temperature of 25 K. At 5 K, the annealed trilayer can be conceived as being strongly chemically modulated, consisting of two partially Fe-doped superconducting MgB2 layers separated by an interdiffused weakly magnetic Fe-B interlayer, which is characterized by a low hyperfine magnetic field B-hf of similar to 11 T. This chemically modulated layer structure of the trilayer after annealing was verified by Rutherford backscattering.

The problem of the two-level laser is studied analytically. The steady-state solution is expressed as a continued fraction and allows for accurate approximation by rational functions. Moreover, we show that the abrupt change observed in the pump dependence of the steady-state population is directly connected to the transition to the lasing regime. The condition for a sharp transition to Poissonian statistics is expressed as a scaling limit of vanishing cavity loss and light-matter coupling, kappa -> 0, g -> 0, such that g(2)/kappa stays finite and g(2)/kappa > 2 gamma, where gamma is the rate of nonradiative losses. The same scaling procedure is also shown to describe a similar change to the Poisson distribution in the Scully-Lamb laser model, suggesting that the low-kappa, low-g asymptotics is of more general significance for the laser transition.

Thin films of arsenic sulphide have been obtained by Pulsed Laser Deposition from bulk As(2)S(3). A very thin layer of Eu(2)O(3) was deposited by PLD from a different target in the next deposition process. After a heat treatment at 180 degrees C for 45 minutes in inert atmosphere a structural transformation of the amorphous As(2)S(3) to realgar (As(2)S(2)) occurred and the film develops a strong luminescence effect.

A comparative study of ignition realized by a classical spark plug and by a Nd:YAG laser in 12% methane-air mixture was performed. Various parameters of the ignition, such as the peak pressure, the pressure building time, or the speed propagation of the flame front were recorded at various initial filling pressure of the combustion chamber, or function of the laser pulse energy. Advantages of ignition by laser in comparison with classical ignition by an electrical spark plug are discussed.

We report here our results in the preparation of ZnO films with high UV band to band characteristic luminescence emission by potentiostatic electrodeposition. Zinc nitrate aqueous baths with different concentration and additives were employed for the preparation of the films on platinum substrates. We focused our research in determining how the electrodeposition bath composition, i.e. zinc nitrate concentration and addition of KCI or polyvinyl pyrolidone and applied overpotential influence the morphological and optical properties of the oxide films. Scanning electron microscopy was employed for characterizing the films in terms of morphology. Optical reflection, photoluminescence spectroscopy and cathodoluminescence were used for determining the optical characteristics of the samples. The morphology of the deposit varies from hexagonal prisms to platelets as a function of the deposition rate. This experimental parameter also influences the luminescence properties. We found that at low deposition rates high UV luminescent material is obtained. (C) 2011 Elsevier Ltd. All rights reserved.

We have used scanning Hall probe microscopy to investigate vortex structures and vortex dynamics in Bi2Sr2CaCu2O8+delta thin films in very low perpendicular magnetic fields. After nominally zero field cooling in the Earth's field we find that the vortices appear to be in a stable glassy state in our highly disordered samples. After applying a cancellation field of a few Oersted at low temperature, however, the system enters a new regime at very low magnetic induction when the only image contrast is due to vortices that are intermittently trapped on strong pinning centres. This state shares many of the signatures of the re-entrant vortex liquid phase that has been theoretically predicted in these highly anisotropic materials at very low vortex densities. Analysing the trapping times for vortices in the fluctuating state we estimate that the pinning potential of typical strong pinning centres is about 900 K under our experimental conditions. To our knowledge, this is the first direct experimental evidence for the existence of a dynamic liquid-like vortex state in this highly anisotropic material at very low magnetic induction.

Multiband superconductors can have several types of domains that are inhibited in conventional single-band superconductors. These domains are phase domains and chiral domains and their domain wall are an interband phase difference soliton. In a superconductor with an odd number of electronic bands (five or more) and with positive interband Josephson interactions, we find other types of domains with different interband phase differences. We call these domains configuration domains because pseudo-order parameters for each band are dispersed in the complex plain and several configurations, which have several local minima. Fractional vortices serve as hubs for phase difference solitons (configuration domain walls). The divergence of the number of configurations with local minima would pose a serious problem for the stability of superconductivity. (C) 2011 Elsevier B.V. All rights reserved.

Langanite nanopowders doped with erbium and ytterbium were prepared by a citrate sol-gel method and annealed in air at various temperatures between 700 degrees C and 1000 degrees C. For annealing temperatures 900 degrees C and 1000 degrees C, part of the langanite transforms in perovskite (LaGaO(3)), as evidenced in XRD spectra. The reddish color of the powders due to color centers associated to oxygen defects intensifies with increasing annealing temperature. Green and red luminescence was obtained for IR (933 nm) pumping and only green for UV pump. The mechanisms involved in luminescence and energy transfer processes are presented and discussed.

The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single complex molecules and the study of ultra-fast processes. Silicon pixel sensors will be used to record the diffraction images. In 3 years of operation the sensors will be exposed to doses of up to 1 GGy of 12 keV X-rays. At this X-ray energy no bulk damage in silicon is expected. However fixed oxide charges in the insulating layer covering the silicon and interface traps at the Si-SiO(2) interface will be introduced by the irradiation and build up over time. We have investigated the microscopic defects in test structures and the macroscopic electrical properties of segmented detectors as a function of the X-ray dose. From the test structures we determine the oxide charge density and the densities of interface traps as a function of dose. We find that both saturate (and even decrease) for doses between 10 and 100 MGy. For segmented sensors the defects introduced by the X-rays increase the full depletion voltage, the surface leakage current and the inter-pixel capacitance. We observe that an electron accumulation layer forms at the Si-SiO(2) interface. Its width increases with dose and decreases with applied bias voltage. Using TCAD simulations with the dose dependent parameters obtained from the test structures, we are able to reproduce the observed results. This allows us to optimize the sensor design for the XFEL requirements. In addition the Si-SiO(2) interface region has been studied with time resolved signals induced by sub-nanosecond 660 nm laser light, which has a penetration of about 3 m m in silicon. Depending on the biasing history, humidity and irradiation dose, losses of either electrons or holes or no charge losses are observed. The relevance of these results for the sensor stability and performance is under investigation.

The formation and crystallization of disordered nanosized ZnO resulting from the thermal decomposition of nanocrystalline hydrozincite [Zn-5(CO3)(2)(OH)(6)] has been Observed and investigated during pulse annealing experiments Up to 625 degrees C in air or vacuum by electron paramagnetic resonance of trace amounts of substitutional Mn2+ impurity ions, in correlation with X-ray diffraction and transmission electron microscopy measurements. The mesoporous structure of the disordered ZnO, which initially forms in air and vacuum at 225 and 175 degrees C, respectively, further transforms into nanocrystalline ZnO of increasing particle size and improved lattice quality at higher annealing temperatures. The crystallization process, which does not affect the concentration of the substitutional impurity ions, as well as the simultaneous presence of both disordered and crystalline phases, should be considered in further applications of the resulting nanosized ZnO.