Publications

Trapping aspects in two typical silicon-based nanostructures are investigated. Both 1D nanocrystalline porous silicon structures and 2D (nc-Si/CaF2)50 multilayered structures are considered. The curves of relaxation current versus temperature were obtained using the thermally stimulated currents method without external bias. Two types of maxima (rather broad maxima and spikes) were experimentally evidenced. The spikes are due to the stress-induced traps and their parameters are temperature dependent. To describe the trapping-detrapping-retrapping processes, a general model was proposed. The temperature dependence of stress-induced trap concentrations was described by a power law and the corresponding temperature dependence of cross-sections by a Gaussian law. The model was successfully applied on available experimental data.

Fe(3)O(4) nanoparticles were synthesized by a wet chemical method using Fe(III)/Fe(II) - hydrazine dihydrochloride systems. The structure, morphology, and magnetic properties of magnetite were examined by X-ray powder diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), Mossbauer spectroscopy and superconducting quantum interference device (SQUID). Almost all the particles exhibit superparamagnetic like properties at room temperature. This behavior can be correlated with the size of the particles which ranged between 20-70 nm.

Percolation phenomena are investigated and discussed in three kinds of nanostructures: first two are nanocrystalline silicon-based systems, Si nanodots embedded in amorphous SiO2 matrix and porous silicon formed by an oxidized nanowire network, and the third consisting of a multi-walled carbon nanotube network embedded in amorphous SiN. The current-voltage characteristics measured on first two systems present voltage percolation thresholds with the same shape - a saturation plateau region of the current, followed by an abrupt increase. The current-voltage and conductance-voltage curves measured on multi-walled carbon nanotube network embedded in amorphous SiN present non-periodic and temperature independent oscillations. These oscillations are interpreted as voltage percolation thresholds.

The effect of Fe, respective Cu, additions as substitute for Ni in NiTi shape memory alloys (SMAs) on the delaying of its phase transition and narrowing hysteresis are well known, NiTi-Fe and NiTi-Cu SMAs having applications especially to the actuators that require such properties. These SMAs are currently produced by conventional melting methods, which are energo-intensive and impose very severe processing conditions to avoid contamination. The results of researches presented in this paper prove the possibility of these SMAs obtaining by powder metallurgy via reactive sintering - more advantageous from both technical and economic point of view. A beneficial effect on both sintering and homogeneity of the obtained SMAs proved to have a controlled mechanical alloying applied to powder mixture before compacting and sintering.

Smooth, transparent and highly oriented nanostructured ZnO films were synthesized by RF-magnetron sputtering onto Si(100) substrates. A mild-pressed zinc oxide powder target was used for all depositions. The sputtering parameters were varied in order to obtain structures with good adherence and crystallinity. The depositions were carried out in inert argon atmosphere at four sputtering pressures (0.2 Pa, 0.25 Pa, 0.3 Pa and 0.45 Pa). ZnO films were deposited at 150 degrees C. The films were characterized from structural (XRD) and morphological (AFM) point of view. The influence of each sputtering parameter on the morphological and structural properties is discussed.

In this study, copper sulfide CuS (covellite) was obtained, starting from the Cu(CH3COO)(2)center dot H2O and thiourea ((NH2CSNH2) system, and working in presence or absence of sodium-bis(2-ohylhexyl) sulfosuccinate (Na-AOT). Samples obtained from Cu(CH3COO)(2)center dot H2O:NH2CSNH2:Na-AOT system were deposited as thin films on the glass substrates. CuS samples obtained were characterized by X ray diffraction, IR spectroscopy, TEM transmission electron microscopy and SAED - selected area electron diffraction. The influence of surfactant on the shape and size of CuS (covellite) nanocrystals was established.

The Ba1-xPbxNd2Ti5O14 ceramic material (BNT) is very attractive for applications at frequencies around few GHz [1]. The temperature coefficient of the resonant frequency T-f decreases from + 70 ppm/degrees C to - 15 ppm/degrees C with the Pb content x increase up to 0.5. The samples with high Pb content exhibit a dielectric constant up to 86.6, but the product Q x f is several times lower than for such microwave ceramics as zirconium tin titanate [1-2]. When a product Q x f higher than 6000 is required in order to use the BNT materials at high frequencies, then the Pb content can result from the tradeoff between small temperature coefficient T-f and high quality factor Q. The features of the BNT dielectric resonators lead to the development of miniaturized dielectric resonator antenna (DRA) with improved characteristics. The DRAs of BNT ceramics presented in this paper exhibit an increased bandwidth due to an optimal height over diameter ratio. For an increased gain and shaping of the overall radiation pattern, an array of dielectric resonator antennas is proposed.

The effect of nitrogen (N) introduced by ion implantation at the SiO2/4H-SiC interface on the capacitance of the MOS capacitors is investigated. The Thermal Dielectric Relaxation Current (TDRC) technique and Capacitance-Voltage (C-V) measurements performed at different temperatures and probe frequencies on an N implanted sample and on a virgin sample were employed for this purpose. There are three types of defects located at or near the interface, D-it, NIToxfast and NIToxslow that can be distinguished. Only D-it and NIToxfast respond to the a.c. small, high frequency signal at temperatures above 150K. The separation of D-it from the NIToxfast states have enabled us to study the influence of the excess of interfacial Nitrogen on each of the mentioned defects. It has been found that the N-implantation process fully suppresses the formation of NIToxfast and partially NIToxslow and D-it. Theoretical C-V characteristics were computed, based on the defect distributions determined by TDRC, and compared with the experimental ones showing a close agreement.