National Institute Of Materials Physics - Romania

Publications

5781 articles found

3091. Matrix-assisted photo-amorphization effect in As40S30Se30 films with silver

Authors: Popescu, M; Petkov, K; Sava, F; Taseeva, J; Lorinczi, A; Velea, A

Published: DEC 2009, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 11, 2003, DOI:

Matrix assisted photo-amorphization effect has been observed in thin chalcogenide films of composition As40S30Se30 deposited by thermal evaporation on silicon wafer substrate covered by silver. The initial films contain Ag2S and Ag4SeS crystallites embedded in an amorphous matrix. Illumination by a cold light halogen lamp induces the disappearance of the crystalline fraction and leads to significant changes in the diffraction pattern of the amorphous films.

3092. Growth and optical characteristics of coumarin 6 doped potassium hydrogen phthalate (KAP) crystals

Authors: Enculescu, M

Published: DEC 2009, OPTICAL MATERIALS, 32, 285, DOI: 10.1016/j.optmat.2009.08.002

Single-crystals of potassium hydrogen phthalate (KAP) doped with coumarin 6 (C6) were grown by solution evaporation technique. Powder X-ray diffraction. optical transmission and luminescence measurements were performed. The structure and morphology of the KAP crystals are not changed with the incorporation of the dye. Transparency of the dye-doped crystals is suited for non-linear optical (NLO) applications and UV cut-off is not changed when compared with the pure KAP crystals. The dye-doped crystals present an absorption band at 350 nm while the growth solution exhibits a peak at 400 nm. The doped crystals have a strong emission band at 450 nm that is excited at 350 nm and the second harmonic generating (SHG) properties are demonstrated using luminescence measurements. (C) 2009 Elsevier B.V. All rights reserved.

3093. Vibrational properties of the electrochemically synthesized polyindole/single-walled carbon nanotubes composite

Authors: Baibarac, M; Baltog, I; Scocioreanu, M; Lefrant, S; Mevellec, JY

Published: DEC 2009, SYNTHETIC METALS, 159, 2555, DOI: 10.1016/j.synthmet.2009.09.010

Electrochemical polymerization of indole in a LiClO4/CH3CN solution on a single-walled carbon nanotubes (SWNTs) film was studied by cyclic voltammetry, Raman scattering and FTIR spectroscopy. Comparing the cyclic voltammograms recorded on a blank Pt electrode with those obtained when carbon nanotubes films were previously deposited onto the Pt electrode, a down-shift of the indole reduction peak potential in the latter case was observed. Raman spectroscopy studies indicate that the electrochemical deposition of polyindole (PIN) onto the SWNT film results in a breaking of SWNT bundles into individual tubes. A covalent functionalization of SWNTs with PIN in the doped state is demonstrated by FTIR spectroscopy, when an increase in the intensity of the absorption band at 1045 cm(-1) is observed. Besides, Raman and FTIR studies performed on samples electrochemically prepared and thereafter post-chemically reacted with an NH4OH solution, indicate both a roping process of individual tubes with PIN as a binding agent and a strong steric hindrance effect. (C) 2009 Elsevier B.V. All rights reserved.

3094. Semiconductor detectors for high radiation fields: microscopic processes in materials and the control of device parameters

Authors: Lazanu, S; Ciurea, ML; Lazanu, I

Published: DEC 2009, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 11, 2154, DOI:

The knowledge of the effects of radiation in semiconductor devices, in particular in detectors, represents an important and active field of research. The influence of isovalent impurities, carbon and germanium, on the radiation damage of silicon for detectors is investigated in the frame of a quantitative phenomenological model for defect kinetics, developed previously by the authors. The concentrations of defects induced by irradiation in materials with different doping levels are calculated, as well as the leakage current and effective carrier concentrations in p-n junction detectors made from these materials. The beneficial effect of Ge on the radiation damage of silicon is deduced.

3095. Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

Authors: Pintilie, I; Lindstroem, G; Junkes, A; Fretwurst, E

Published: NOV 21 2009, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 611, 68, DOI: 10.1016/j.nima.2009.09.065

This work focuses on the investigation of radiation-induced defects responsible for the degradation of silicon detector performance. Comparative studies of the defects induced by irradiation with Co-60-gamma rays, 6 and 15 MeV electrons, 23 GeV protons and reactor neutrons revealed the existence of point defects and cluster-related centers having a strong impact on damage properties of Si diodes. The detailed relation between the "microscopic" reasons as based on defect analysis and their "macroscopic" consequences for detector performance is presented. In particular, it is shown that the changes in the Si device properties (depletion voltage and leakage current) after exposure to high levels of Co-60-gamma doses can be completely understood by the microscopically investigated formation of two point defects, a deep acceptor and a shallow donor, both depending strongly on the oxygen concentration in the silicon bulk. Specific for hadron irradiation are the annealing effects which decrease (increase) the originally observed damage effects as seen by the changes of the depletion voltage and these effects are known as "beneficial" and "reverse" annealing, respectively. A group of three cluster-related defects, revealed as deep hole traps, proved to be responsible specifically for the reverse annealing. Their formation is not affected by the oxygen content or silicon growth procedure suggesting that they are complexes of multi-vacancies located inside extended disordered regions. (C) 2009 Elsevier B.V. All rights reserved.

3096. Local environment of vanadium in V/Al/O-mixed oxide catalyst for propane ammoxidation: Characterization by in situ valence-to-core X-ray emission spectroscopy and X-ray absorption spectroscopy

Authors: Safonova, OV; Florea, M; Bilde, J; Delichere, P; Millet, JMM

Published: NOV 15 2009, , DOI: 10.1016/j.jcat.2009.09.014

3097. AlN on silicon based surface acoustic wave resonators operating at 5 GHz

Authors: Neculoiu, D; Muller, A; Deligeorgis, G; Dinescu, A; Stavrinidis, A; Vasilache, D; Cismaru, AM; Stan, GE; Konstantinidis, G

Published: NOV 5 2009, ELECTRONICS LETTERS, 45, 1197, DOI: 10.1049/el.2009.2520

The fabrication and characterisation of surface acoustic wave resonators operating in the gigahertz frequency range are presented. The devices were fabricated on thin AlN layers deposited by magnetron sputtering on high resistivity (100) oriented silicon substrates. Using direct writing e-beam lithography, well defined interdigital transducers with 300 nm finger width and spacing have been obtained. On-wafer microwave measurements have demonstrated a narrow bandstop frequency characteristic with high rejection at approximately 5 GHz and an electromechanical coupling coefficient of 0.53%.

3098. Time-dependent transport via the generalized master equation through a finite quantum wire with an embedded subsystem

Authors: Gudmundsson, V; Gainar, C; Tang, CS; Moldoveanu, V; Manolescu, A

Published: NOV 4 2009, NEW JOURNAL OF PHYSICS, 11, DOI: 10.1088/1367-2630/11/11/113007

In this paper, we apply the generalized master equation to analyze time-dependent transport through a finite quantum wire with an embedded subsystem. The parabolic quantum wire and the leads with several subbands are described by a continuous model. We use an approach originally developed for a tight-binding description selecting the relevant states for transport around the bias-window defined around the values of the chemical potential in the left and right leads in order to capture the effects of the nontrivial geometry of the system in the transport. We observe a partial current reflection as a manifestation of a quasi-bound state in an embedded well and the formation of a resonance state between an off-set potential hill and the boundary of the system.

3099. ZnO particles of wurtzite structure as a component in ZnO/carbon nanotube composite

Authors: Baibarac, M; Baltog, I; Velula, T; Pasuk, I; Lefrant, S; Gautier, N

Published: NOV 4 2009, JOURNAL OF PHYSICS-CONDENSED MATTER, 21, DOI: 10.1088/0953-8984/21/44/445801

Composites based on carbon nanotubes and ZnO particles with needle shapes were prepared for applications in energy storage. Depending on the temperature (85 or 25 degrees C) at which the reaction between NaOH and ZnCl(2) was carried out, particles with two different morphologies: needle-shaped (NS) and double-pyramid-shaped (DPS), respectively, are obtained. Scanning electron microscopy, photoluminescence, UV-Vis absorption spectroscopy, x-ray diffraction and Raman light scattering studies reveal that the NS and DPS particles belong to ZnO with wurtzite (WZ) structure and epsilon-Zn(OH)(2) as precursors of ZnO, respectively. Using the ZnO/carbon nanotube composite as a negative electrode and an electrolytic solution containing LiPF(6), the charge-discharge characteristics of rechargeable lithium ions cells were determined. Additional information concerning the electrochemical reactions at the interface of the two electrodes was obtained by cyclic voltammetry.

3100. Direct laser writing of two-dimensional photonic structures in amorphous As2S3 thin films

Authors: Popescu, A; Miclos, S; Savastru, D; Savastru, R; Ciobanu, M; Popescu, M; Lorinczi, A; Sava, F; Velea, A; Jipa, F; Zamfirescu, M

Published: NOV 2009, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 11, 1880, DOI:

A method for building photonic structures in As2S3 amorphous chalcogenide films has been developed. 2-D photonic configurations characterized by a regular assembly of rods (triangular lattice) or gratings with traces of micrometer period have been obtained. A femto-second laser has been used in photonic crystal registration. The simulation performed on these photonic configuration shows that the obtained chalcogenide structures could be efficient for operation in the infrared range around several micrometers wavelength.