Publications

6,096 articles found

3411

Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

Pintilie, I; Lindstroem, G; Junkes, A; Fretwurst, E

NOV 21 2009, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 611, 68

DOI: 10.1016/j.nima.2009.09.065

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This work focuses on the investigation of radiation-induced defects responsible for the degradation of silicon detector performance. Comparative studies of the defects induced by irradiation with Co-60-gamma rays, 6 and 15 MeV electrons, 23 GeV protons and reactor neutrons revealed the existence of point defects and cluster-related centers having a strong impact on damage properties of Si diodes. The detailed relation between the "microscopic" reasons as based on defect analysis and their "macroscopic" consequences for detector performance is presented. In particular, it is shown that the changes in the Si device properties (depletion voltage and leakage current) after exposure to high levels of Co-60-gamma doses can be completely understood by the microscopically investigated formation of two point defects, a deep acceptor and a shallow donor, both depending strongly on the oxygen concentration in the silicon bulk. Specific for hadron irradiation are the annealing effects which decrease (increase) the originally observed damage effects as seen by the changes of the depletion voltage and these effects are known as "beneficial" and "reverse" annealing, respectively. A group of three cluster-related defects, revealed as deep hole traps, proved to be responsible specifically for the reverse annealing. Their formation is not affected by the oxygen content or silicon growth procedure suggesting that they are complexes of multi-vacancies located inside extended disordered regions. (C) 2009 Elsevier B.V. All rights reserved.

3412

Local environment of vanadium in V/Al/O-mixed oxide catalyst for propane ammoxidation: Characterization by in situ valence-to-core X-ray emission spectroscopy and X-ray absorption spectroscopy

Safonova, OV; Florea, M; Bilde, J; Delichere, P; Millet, JMM

NOV 15 2009

DOI: 10.1016/j.jcat.2009.09.014

3413

AlN on silicon based surface acoustic wave resonators operating at 5 GHz

Neculoiu, D; Muller, A; Deligeorgis, G; Dinescu, A; Stavrinidis, A; Vasilache, D; Cismaru, AM; Stan, GE; Konstantinidis, G

NOV 5 2009, ELECTRONICS LETTERS, 45, 1197

DOI: 10.1049/el.2009.2520

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The fabrication and characterisation of surface acoustic wave resonators operating in the gigahertz frequency range are presented. The devices were fabricated on thin AlN layers deposited by magnetron sputtering on high resistivity (100) oriented silicon substrates. Using direct writing e-beam lithography, well defined interdigital transducers with 300 nm finger width and spacing have been obtained. On-wafer microwave measurements have demonstrated a narrow bandstop frequency characteristic with high rejection at approximately 5 GHz and an electromechanical coupling coefficient of 0.53%.

3414

Time-dependent transport via the generalized master equation through a finite quantum wire with an embedded subsystem

Gudmundsson, V; Gainar, C; Tang, CS; Moldoveanu, V; Manolescu, A

NOV 4 2009, NEW JOURNAL OF PHYSICS, 11

DOI: 10.1088/1367-2630/11/11/113007

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In this paper, we apply the generalized master equation to analyze time-dependent transport through a finite quantum wire with an embedded subsystem. The parabolic quantum wire and the leads with several subbands are described by a continuous model. We use an approach originally developed for a tight-binding description selecting the relevant states for transport around the bias-window defined around the values of the chemical potential in the left and right leads in order to capture the effects of the nontrivial geometry of the system in the transport. We observe a partial current reflection as a manifestation of a quasi-bound state in an embedded well and the formation of a resonance state between an off-set potential hill and the boundary of the system.

3415

ZnO particles of wurtzite structure as a component in ZnO/carbon nanotube composite

Baibarac, M; Baltog, I; Velula, T; Pasuk, I; Lefrant, S; Gautier, N

NOV 4 2009, JOURNAL OF PHYSICS-CONDENSED MATTER, 21

DOI: 10.1088/0953-8984/21/44/445801

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Composites based on carbon nanotubes and ZnO particles with needle shapes were prepared for applications in energy storage. Depending on the temperature (85 or 25 degrees C) at which the reaction between NaOH and ZnCl(2) was carried out, particles with two different morphologies: needle-shaped (NS) and double-pyramid-shaped (DPS), respectively, are obtained. Scanning electron microscopy, photoluminescence, UV-Vis absorption spectroscopy, x-ray diffraction and Raman light scattering studies reveal that the NS and DPS particles belong to ZnO with wurtzite (WZ) structure and epsilon-Zn(OH)(2) as precursors of ZnO, respectively. Using the ZnO/carbon nanotube composite as a negative electrode and an electrolytic solution containing LiPF(6), the charge-discharge characteristics of rechargeable lithium ions cells were determined. Additional information concerning the electrochemical reactions at the interface of the two electrodes was obtained by cyclic voltammetry.

3416

Direct laser writing of two-dimensional photonic structures in amorphous As2S3 thin films

Popescu, A; Miclos, S; Savastru, D; Savastru, R; Ciobanu, M; Popescu, M; Lorinczi, A; Sava, F; Velea, A; Jipa, F; Zamfirescu, M

NOV 2009, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 11, 1880

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A method for building photonic structures in As2S3 amorphous chalcogenide films has been developed. 2-D photonic configurations characterized by a regular assembly of rods (triangular lattice) or gratings with traces of micrometer period have been obtained. A femto-second laser has been used in photonic crystal registration. The simulation performed on these photonic configuration shows that the obtained chalcogenide structures could be efficient for operation in the infrared range around several micrometers wavelength.

3417

Nitridation and crystallization of titanium oxynitride by thermal treatment of TiO2-anatase films in NH3

Trapalis, C; Calderon-Moreno, JM; Todorova, N; Teodorescu, VS; Stoica, M; Nicolescu, M; Anastasescu, M; Gartner, M; Zaharescu, M

NOV 2009, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 11, 1814

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Nitrogen is often used for doping TiO2 films to improve their photocatalytic properties in visible light. Multilayer TiO2 anatase films were deposited by sol-gel method on quartz substrate and thermally treated in O-2 and NH3 flow in 500-800 degrees C range. The effect of the annealing treatment (temperature and atmosphere) on the structural properties of TiO2 films was studied by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). Nitridation causes the amorphization of the anatase tetragonal phase at 600 degrees C. The film re-crystallization into the cubic oxynitride phase is observed at 800 degrees C. EDX results confirms that the incorporation of nitrogen into the amorphous films takes place before thermally activated growth of the oxynitride phase and demonstrates that the relative O:N composition in the crystalline phase is dependent on the temperature of the thermal treatment.

3418

Silver/amorphous As2S3 heterostructure

Popescu, M; Sava, F; Lorinczi, A; Velea, A; Leonovici, M; Zamfira, S

NOV 2009, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 11, 1594

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The heterostructure Ag/As2S3 was deposited on glass substrate in two configurations: Ag/As2S3/glass and As2S3/Ag/glass. The effect of light emitted by a halogen lamp has been investigated by optical microscopy and X-ray diffraction. Particular morphological and structural aspects were revealed. Lateral diffusion rate of Ag has been determined.

3419

Optical advanced spectroscopic techniques for the study of nano-structured materials: Applications to carbon nanotubes

Lefrant, S; Baltog, I; Baibarac, M

NOV 2009, SYNTHETIC METALS, 159, 2176

DOI: 10.1016/j.synthmet.2009.08.029

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In this paper, we present the anti-Stokes Raman scattering as a technique allowing investigations of materials at a nanoscale level. When the energy of the excitation light coincides with the energy of an electronic transition, a strong anti-Stokes Raman spectrum with respect to the prediction of the Maxwell-Boltzman (MB) law is regularly observed. Under a tight-focusing of the excitation light, the anti-Stokes Raman emission is reminiscent of Coherent anti-Stokes Raman Scattering (CARS). It has been detected on carbon nanotubes (CNTs), prototypes of nanometric materials, as well as on other compounds such as copper phthalocyanine (CuPc), poly(bithiophene) (PBTh), poly(3,4-ethylene dioxythiophene) (PEDOT), polyparaphenylene vinylene (PPV) layered as thin films on a metallic support in which are generated surface plasmons. We demonstrate that nanostructures by themselves can be of importance by generating non-linear phenomena that can be exploited for studying such materials and in particular carbon nanotubes. (C) 2009 Elsevier B.V. All rights reserved.

3420

Complex Compounds of Some 3d Ions with 2 Deoxy D Glucose 1. Iron Complex

Covaliu, CI; Jitaru, I; Diamandescu, L; Cristea, C

NOV 2009, REVISTA DE CHIMIE, 60, 1145

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A paramagnetic Fe(III)- 2 deoxy D glucose (Fe-dGl) complex compound with Na(2)[Fe(2)(mu OH)(2)(2dGlc)(2))(2) (H(2)O)(2)Cl(2)] formula was synthesized and characterized by elemental analysis, IR and UV-VIS spectroscopy, thermal analysis TG-DSC, molar electrical conductivity as well as magnetic measurements and Mossbauer spectroscopy, with the aim of developing a new possible MRI contrast agent. The stability in physiological conditions and toxicity of the complex have also been established.