National Institute Of Materials Physics - Romania

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5974 articles found

3441. BEAM SHAPING WITH ANISOTROPIC PERIODIC STRUCTURES

Authors: Rasoga, O; Dragoman, D

Published: 2009, CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, +, DOI:

We show that an anisotropic periodic structure can shape an incident optical beam with a large angular divergence. This is a new application of photonic crystals, which does not require any additional energy source, such as an electric field

3442. Interface States in 4H-and 6H-SiC MOS Capacitors: a Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique

Authors: Lovlie, LS; Pintilie, I; Kumar, SCP; Grossner, U; Svensson, BG; Beljakowa, S; Reshanov, SA; Krieger, M; Pensl, G

Published: 2009, SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 500, DOI: 10.4028/www.scientific.net/MSF.615-617.497

The purpose of this work is to compare the density of shallow interface states (D-it) at the interface of SiO2/SiC MOS capacitors as deducted by the conductance spectroscopy (CS) and thermally dielectric relaxation current (TDRC) techniques. Both capacitors of 4H- and 6H-SiC (n-type) arc investigated, and both ordinary dry oxidation and,in improved industrial procedure have been employed. The two techniques are found to give rather good agreement for interface states located >= 0.3 eV below the conduction band edge (E-c) while for more shallow states vastly different distributions of D-it are obtained. Different reasons for these contradictory results are discussed, such as strong temperature and energy dependence of the capture cross section of the shallow interface States.

3443. STUDIES ON MULTIFUNCTIONAL TEXTILE MATERIALS. IMAGE BASED ANALYSIS AND CLASSIC SPECTROSCOPY

Authors: Beica, T; Frunza, L; Nistor, LC; Zgura, I; Dorogan, A; Carpus, E

Published: 2009, ROMANIAN JOURNAL OF PHYSICS, 54, 400, DOI:

Measurements by optical microscopy and spectroscopy were performed on different textile materials (yarn, woven, knitted materials) in order to get their characterization. Thus, using non-specialized classical equipment, the value of the yarn diameter can be estimated. The yarn behavior during the stretching can be directly observed. The observation of the water imbibition by following the shape and stability of a water droplet placed onto the textile material was also developed; in this way the wetting kinetics of different textile materials was obtained. In addition, the spectral properties of woven materials allowed for the study of the modifications induced by different treatments of the woven materials.

3444. Characteristics of Vacuum Deposited Sucrose Thin Films

Authors: Ungureanu, F; Predoi, D; Ghita, RV; Vatasescu-Balcan, RA; Costache, M

Published: 2009, INTERFACE CONTROLLED ORGANIC THIN FILMS, 129, 71, DOI: 10.1007/978-3-540-95930-4_11

Thin films of sucrose (C12H22O11) were deposited on thin cut glass substrates by thermal evaporation technique (p similar to 10-5 torr). The surface morphology was putted into evidence by FT-IR and SEM analysis. The experimental results confirm a uniform deposition of an adherent sucrose layer. The biological tests (e.g., cell morphology and cell viability evaluated by measuring mitochondrial dehydrogenise activity with MTT assay) confirm the properties of sucrose thin films as bioactive material. The human fetal osteoblast system grown on thin sucrose film was used for the determination of cell proliferation, cell viability and cell morphology studies.

3445. Microwave Investigations on Some Microstrip Left-Handed Structures

Authors: Banciu, MG; Mihai, IA; Militaru, N; Lojewski, G; Petrescu, T

Published: 2009, TELSIKS 2009, VOLS 1 AND 2, +, DOI:

Microstrip structures with left-handed properties are investigated in frequency domain. A method of extracting material effective parameters from the two-port scattering parameters is developed and applied to the proposed left-handed structures.

3446. The Influence of Growth Conditions on the Annealing of Irradiation Induced EH6,7 Defects in 4H-SiC

Authors: Pintilie, I; Lovlie, LS; Irmscher, K; Wagner, G; Svensson, BG; Thomas, B

Published: 2009, SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 372, DOI: 10.4028/www.scientific.net/MSF.615-617.369

Nitrogen doped 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition were investigated by deep level transient spectroscopy after irradiation with 6 MeV electrons or 1.6 MeV protons. The influence of silane and propane flows used during the epilayers growth on the behaviour of radiation induced EH6,7 levels is studied. Samples grown under different conditions were investigated: 1 sample grown in steps of different C/Si ratio obtained by changing the propane flow only; 1 sample grown in steps of different C/Si ratio obtained by changing the silane flow only; 2 samples grown with a C/Si ratio of 1.5 but with different flows of propane and silane. These investigations revealed that the low thermal stability of EH6,7 (the defects anneal out at temperatures as low as 750K) is due to the magnitude of silane now used during the growth irrespective of the C/Si ratio. A possible structure of the EH6,7 defect is discussed.

3447. Phase diagram of a lattice of pancake vortex molecules

Authors: Tanaka, Y; Crisan, A; Shivagan, DD; Iyo, A; Shirage, PM; Tokiwa, K; Watanabe, T; Terada, N

Published: AUG-OCT 2009, PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 469, 1131, DOI: 10.1016/j.physc.2009.05.202

On a superconducting bi-layer with thickness much smaller than the penetration depth, lambda, a vortex molecule might form. A vortex molecule is composed of two fractional vortices and a soliton wall. The soliton wall can be regarded as a Josephson vortex missing magnetic flux (degenerate Josephson vortex) due to an incomplete shielding. The magnetic energy carried by fractional vortices is less than in the conventional vortex. This energy gain can pay a cost to form a degenerate Josephson vortex. The phase diagram of the vortex molecule is rich because of its rotational freedom. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.

3448. Influence of Ionizing Radiations (Electrons and Gamma) on the Electrical Characteristics of LGS Resonators

Authors: Mateescu, I; Georgescu, S; Iliescu, B; Enculescu, I; Georgescu, R; Oproiu, C; Ghita, G

Published: 2009, FERROELECTRICS, 389, 31, DOI: 10.1080/00150190902987517

In this paper results concerning the changes of the electric characteristics of langasite resonators irradiated with electron and gamma rays are reported. For both electron and gamma irradiations the quality factor increases significantly, presumably due to the re-distribution of the point defects. Preliminary optical investigations in UV-VIS domain confirm the modification of defect structure.

3449. VIBRATIONAL PROPERTIES OF POLYANILINE FUNCTIONALIZED PbI2

Authors: Baltog, I; Baibarac, M; Mihut, L; Preda, N; Velula, T; Bucur, C; Husanu, M

Published: 2009, ROMANIAN JOURNAL OF PHYSICS, 54, 688, DOI:

Functionalization of PbI2 with polyaniline-emeraldine base (PANI-EB) or polyaniline-emeraldine salt (PANI-ES) is demonstrated by Raman spectroscopy. Two functionalization methods were used: electrochemical polymerization of aniline onto the PbI2 modified Pt electrode and the mechanico-chemical reaction between PANI and PbI2. The functionalization induces changes in the Raman spectrum of PbI2 that consist in the appearance of new Raman lines with the peaks at 80, 144 and 170 cm(-1) The first line is the signature of the "stacking faults" that disrupt the stacking sequence of layers I-Pb-I atomic layers along the c crystalline axis by the intercalation of polymer molecules The bands at 144 and 170 cm(-1) are attributed to a vibrational mode associated to the Pb-NHR"(2) (R" = C6H4) bond.

3450. Radio proximity Doppler sensor with high K dielectric materials

Authors: Nicolaescu, I; Radu, A; Ioachim, A; Vizitiu, C

Published: 2009, 2009 EUROPEAN RADAR CONFERENCE (EURAD 2009), +, DOI:

One of the most important trend in electronic devices manufacturing is miniaturisation. Among other techniques used to decrease the physical dimensions of microwave devices one is to employ materials with high permitivity [1], providing that the dimension of the device is proportional to the wavelength in the material, which is square effective permittivity times less than the wavelengths in free space. The paper shortly presents the manufacturing process to obtain a high permittivity ZST ((Zr-0.8, Sn-0.2)TiO4) material used to build a dielectric resonator oscillator, which is used as a proximity Doppler sensor. Computed and experimental results as well as the procedure to measure the parameters of the Doppler sensor are presented. The sensor described in the paper may be considered as a short range radar device.