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6,096 articles found

3951

Correlated electrons and transport in a quantum point contact and in a double-quantum-dot system

Bulka, BR; Kostyrko, T; Tolea, M; Dinu, IV

JUN 27 2007, JOURNAL OF PHYSICS-CONDENSED MATTER, 19

DOI: 10.1088/0953-8984/19/25/255211

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A problem of electronic correlations is considered for two specific mesoscopic systems: the quantum point contact (QPC) and the double quantum dot (2QD) system. The systems are described using a generalized Anderson Hamiltonian. We show that charge fluctuations are relevant for electronic transport. In the QPC a local accumulation of charge and the dynamical Coulomb blockade effect lead to the 0.7 structure in the conductance characteristics. The evolution of the conductance with a magnetic field and in non-equilibrium situations is presented as well. The double quantum dot is studied in the approach, in which correlations within the 2QD are treated exactly, whereas the coupling of the 2QD to the leads is considered in the approximation valid at temperatures above the Kondo temperature. We analyse the evolution of the gate voltage dependence of the spin correlation functions and the conductance with the change of the interdot hopping. For the hopping parameter greater than a threshold value of the on-dot repulsion the physics of the device is dominated by the ground state eigenstates of the 2QD and antiferromagnetic correlations in the case of the doubly occupied 2QD. With a decrease of the interdot hopping repulsion below the threshold we observe a significant reduction of the antiferromagnetic coupling between the dots together with an enhanced occupation of the triplet states.

3952

Effects of chemical structure on the electrical properties of some polymers with imidic structure

Cosutchi, AI; Hulubei, C; Buda, M; Botila, T; Ioan, S

JUN 26 2007, E-POLYMERS

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The electrical properties of two types of imidic polymers, i.e. copolymaleimides containing azobenzene groups and epiclon-based polyimides with their corresponding poly( amic acid)s, have been investigated. The dielectric constant and electrical conductance were experimentally measured over the 1-100 KHz frequency range. Also, the dielectric constants for all samples were determined from the experimentally and theoretically evaluated refractive indices at optical frequencies, when Maxwell's relationship can be applied. From the current-voltage characteristic I( U), electrical resistance can be determined, providing information on the relationship between the nature of the material and its electric properties. The obtained values show that epiclon-based polyimides and copolymaleimides present higher electrical resistivity than the poly( amic acid) s. The dissipation factor was evaluated, revealing low energy loss under the form of heat in the studied dielectrics. These results show that these polymeric materials are good insulators, which recommends them for microelectronic applications.

3953

Rotational fluctuations of water confined to layered oxide materials: Nonmonotonous temperature dependence of relaxation times

Frunza, L; Schonhals, A; Frunza, S; Parvulescu, VI; Cojocaru, B; Carriazo, D; Martin, C; Rives, V

JUN 21 2007, JOURNAL OF PHYSICAL CHEMISTRY A, 111, 5175

DOI: 10.1021/jp0717140

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The rotational molecular dynamics of water confined to layered oxide materials with brucite structure was studied by dielectric spectroscopy in the frequency range from 10(-2) to 10(7) Hz and in a broad temperature interval. The layered double hydroxide samples show one relaxation process, which was assigned to fluctuations of water molecules forming a layer, strongly adsorbed to the oxide surface. The temperature dependence of the relaxation rates has an unusual saddlelike shape characterized by a maximum. The model of Ryabov et al. (J. Phys. Chem. B 2001, 105, 1845) recently applied to describe the dynamics of water molecules in porous glasses is employed also for the layered materials. This model assumes two competing effects: rotational fluctuations of water molecules that take place simultaneously with defect formation, allowing the creation of free volume necessary for reorientation. The activation energy of rotational fluctuations, the energy of defect formation, a pre-exponential factor, and the defect concentration are obtained as main parameters from a fit of this model to the data. The values of these parameters were compared with those found for water confined to nanoporous molecular sieves, porous glasses, or bulk ice. Several correlations were discussed in detail, such as the lower the value of the energy of defect formation, the higher the number of defects. The pre-exponential factor increases with increasing activation energy, as an expression of the compensation law, and indicates the cooperative nature of the motional process. The involvement of the surface OH groups and of the oxygen atoms of the interlayer anions in the formation of hydrogen bonds was further discussed. For the birnessite sample, the relaxation processes are probably overlaid by a dominating conductivity contribution, which is analyzed in its frequency and temperature dependence. It is found that the conductivity of birnessite obeys the characteristics of semiconducting disordered materials. Especially the Barton/Nakajima/Namikawa relationship is fulfilled. Analyzing the temperature dependence of the direct current (dc) conductivity sigma(0) in detail gives some hint that sigma(0)(T) has also an unusual saddlelike form.

3954

Structure, properties and gas sensing effect of SnSe2 films prepared by pulsed laser deposition method

Popescu, M; Sava, F; Lorinczi, A; Socol, G; Mihailescu, IN; Tomescu, A; Simion, C

JUN 15 2007, JOURNAL OF NON-CRYSTALLINE SOLIDS, 353, 1869

DOI: 10.1016/j.jnoncrysol.2007.02.055

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Amorphous SnSe, films were prepared by pulsed laser deposition (PLD) from solid polycrystalline targets. The atomic scale structure has been revealed by X-ray diffraction. Hardness and electrical properties were measured. Strong gas sensing properties have been evidenced for the first time in heat treated films. (c) 2007 Elsevier B.V. All rights reserved.

3955

Hydrothermal synthesis and structural characterisation of xTiO(2)-(1-x)alpha-Fe2O3 mixed oxide nanoparticles

Diamandescu, L; Feder, M; Tarabasanu-Mihaila, D; Vasiliu, F

JUN 15 2007, APPLIED CATALYSIS A-GENERAL, 325, 275

DOI: 10.1016/j.apcata.2007.02.039

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xTiO(2)-(1- x)alpha-Fe2O3 (x = 0.0-1.0) mixed oxide nanoparticle, system ha, been synthesized by a hydothermal route, X-ray diffraction, Mossbauer spectroscopy and electron microscopy have been used to study the structure, morphology and substitution in the nanosized samples. Experimental evidence for the solubility limits of Ti4+, in alpha-Fe2O3 lattice and of Fe3+ in TiO2 structure is given. (c) 2007 Elsevier B.V. All rights reserved.

3956

Formation of icosahedral phase in an Al93Fe3Cr2Ti2 bulk alloy

Kim, KB; Xu, W; Tomut, M; Stoica, M; Calin, M; Yi, S; Lee, WH; Eckert, J

JUN 14 2007, JOURNAL OF ALLOYS AND COMPOUNDS, 436, L4

DOI: 10.1016/j.jallcom.2006.06.106

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The microstructural investigation of a suction-cast Al93Fe3Cr2Ti2 bulk alloy reveals that an icosahedral phase forms together with monoclinic Al-13(Fe,Cr)(4) and tetragonal Al3Ti in an alpha-Al matrix. The icosahedral phase is often surrounded by Al3Ti particles indicating that the formation of the icosahedral phase strongly competes with the Al3Ti phase. Chemical analysis reveals that Ti has a strong influence to stabilize the Al3Ti phase. In contrast, both Cr and Fe are effective to stabilize the icosahedral phase. (C) 2006 Elsevier B.V. All rights reserved.

3957

Asymmetric localization in disordered Landau bands

Nita, M; Aldea, A; Zittartz, J

JUN 6 2007, JOURNAL OF PHYSICS-CONDENSED MATTER, 19

DOI: 10.1088/0953-8984/19/22/226217

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We show that, due to band mixing, the eigenstate localization within the disordered Landau bands gets an asymmetric structure: the degree of localization increases in the lower part of the band and decreases in the upper one. The calculation is performed for a two-dimensional lattice with the Anderson disorder potential and we prove that this effect is related to the upper shift of the extended states within the band and is enhanced by the disorder strength. The asymmetric localization and the energy shift disappear when the interband coupling is switched off.

3958

Iron oxide in a silica matrix prepared by the sol-gel method

Predoi, D; Crisan, O; Jitianu, A; Valsangiacom, MC; Raileanu, M; Crisan, M; Zaharescu, M

JUN 4 2007, THIN SOLID FILMS, 515, 6323

DOI: 10.1016/j.tsf.2006.11.148

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FexOy-SiO2 nanocomposites were prepared by sol-gel method by using two SiO2 sources and Fe(SO4)(2)center dot 7H(2)O as raw materials. The amorphous gels were thermally treated up to 1000 degrees C. The initial gel and the thermally treated samples were characterized by thermo-gravimetric analysis (TGA) and differential thermal analysis (DTA) and infrared spectroscopy. The presence of hematite was confirmed by the obtained Mossbauer spectra which showed the characteristic sextet. The total amount and the size distributions of the hematite nanoparticles can be controlled via the initial precursors and subsequent by annealing conditions. (C) 2006 Elsevier B.V. All rights reserved.

3959

Transitions of barium strontium titanate ferroelectric ceramics for different strontium content

Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Dutu, A; Antohe, S; Berbecaru, C; Georgescu, L; Stoica, G; Alexandru, HV

JUN 4 2007, THIN SOLID FILMS, 515, 6293

DOI: 10.1016/j.tsf.2006.11.097

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Ceramic based barium strontium titanate (BST) solid solutions with the formula Ba1-xSrxTiO3 are very important candidates for a wide range device applications. Several doped (Mn and Mg) and undoped samples were prepared by standard solid-state reaction. Special emphasis was put on compositions with x=0.35 and 0.60, with high potential for applications. The samples were sintered at temperatures in the 1200 divided by 1260 degrees C range. Structural X-ray diffraction analysis preformed confirms the perovskite structure. The dielectric parameters were investigated in a wide temperature range between - 150 and 150 degrees C. The temperature was cyclically changed in both directions, up and down, at a rate of less than 2 degrees C/ min. Both permittivity and dielectric loss were measured at low frequencies, 1 kHz. The peak values of the permittivity are increasing from 2000 to 4000 with the sintering temperature increase. Moreover the dielectric parameters were measured at room temperature in microwave domain (1 divided by 2 GHz). The Curie temperature of BST samples with x=0.35 and x=0.6 is in agreement with the Curie point dependence on Sr content, as we have previously reported. (C) 2007 Published by Elsevier B.V.

3960

Structural and optical properties of the SiO2-P2O5 films obtained by sol-gel method

Vasiliu, I; Gartner, M; Anastasescu, M; Todan, L; Predoana, L; Elisa, M; Negrila, C; Ungureanu, F; Logofatu, C; Moldovan, A; Birjega, R; Zaharescu, M

JUN 4 2007, THIN SOLID FILMS, 515, 6605

DOI: 10.1016/j.tsf.2006.11.106

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A comparative study of the sol-gel films prepared in the SiO2-P2O5 system starting with triethylphosphate, triethylphosphite and phosphoric acid as P precursors was performed. The work addresses basic aspects of physics, chemistry, and engineering of oxide films for applications in microelectronics, sensing, nano-photonics, and optoelectronics by establishing the influence of different precursors on the composition, structure and optical properties of the obtained films. The influence of the type of substrate (glass and indium tin oxide coated glass) and of the thermal treatment (200 and 500 degrees C on their structure and properties was studied. By spectroscopic ellipsometry, X-Ray photoemission spectroscopy and atomic force microscopy measurements the high vaporization of the phosphorous during the densification of the films by thermal treatment was noticed when P-alkoxides were used. The phosphoric acid that forms chemical bond with silica network during the sol-gel process leads to better incorporation of P in the silica network as compared to the P-alkoxides. (C) 2006 Elsevier B.V. All rights reserved.