National Institute Of Materials Physics - Romania

We report novel pulsed laser deposition conditions that were used to obtain superconducting epitaxial YBCO thin films, grown in situ using an oxygen pressure lower than the usual one during the cool-down time. We studied the influence of the PLD conditions as substrate temperature, oxygen pressure, laser fluence, and number of laser pulses on the crystallographic and morphological features, and on the superconducting properties of the films. Good superconducting properties were obtained without a high temperature post-deposition annealing process. A maximum critical temperature of 88.6 K was obtained. (c) 2005 Elsevier B.V. All rights reserved.

Epitaxial Pb(Zr,Ti)O-3 (PZT) thin films with thicknesses in the range of 50-200 nin and with 0.2 Zr/(Zr + Ti) ratio, were grown by pulsed laser deposition (PLD). The substrates used for PLD deposition are single crystalline 0.5% Nb-doped (1 0 0)SrTiO3 (STON). SrRuO3 (SRO) thin films were deposited as bottom and top electrodes in order to have minimum structural misfit, to insure on one side high quality growth, and on the other side to minimize the influence of the ext,ended structural defects. Structural and electrical characterization was performed. The epitaxial PZT films are c-axis oriented and have an average roughness of 0.4 nm. The ferroelectric behavior was proved in all investigated films by the presence of the hysteresis loops and by the butterfly shape of the capacitance-voltage (C-V) characteristics. The ferroelectricity was present even in the samples with relative high leakage currents, down to a thickness of 50 nm. These results are essential when small thickness is needed for miniaturization of ferroelectric devices using PZT. (c) 2005 Elsevier B.V. All rights reserved.

Thermal, magnetic and transport measurements on CePd2-xNixAl3 alloys within the 0 <= x <= 1 range are reported, including applied pressure (p) and magnetic field on some selected samples. The low temperature results indicate that long range antiferromagnetic order is robust up to x = 0.2, whereas between 0.25 and 0.5 magnetic fluctuations give rise to non-Fermiliquid (NFL) behaviour. In this critical region, the low temperature specific heat can be described as due to two components, the major showing a NFL C-p/T = gamma(0) - gamma(1) root T dependence, while the minor one includes a decreasing fraction of short range order degrees of freedom. The latter is only observed close to the critical point, x(cr) approximate to 0.35. Electrical resistivity (rho) studies performed under pressure for x = 0.5 allow us to investigate the evolution of the NFL state around and beyond x(cr), where the exponent of rho proportional to T-n increases from n = 1 (for p = 0) up to n = 2 (for p = 12 kbar). This exponent is also observed at normal pressure on the x = 1.0 sample. indicating the onset of the Fermi liquid behaviour. Doping and pressure effects are compared by fitting high temperature resistivity data employing a unique function which allows us to describe the evolution of the characteristic energy of this series along a large range of concentration and pressure.

Experimental results on spontaneous emission rates from InGaAs quantum dot lasers that can be explained theoretically by considering the influence of nonradiative mixed state recombinations in the quantum dot-wetting layer system are presented. Our model qualitatively explains the experimental results such as an increase in the threshold current density, temperature stability, and a narrower gain spectrum due to doping the quantum dot active region with the acceptors. Our model also predicts that moderate acceptor concentrations can improve the laser performance at higher carrier injection densities; but high acceptor concentrations deteriorate the laser performance due to the nonradiative Auger recombination that counteracts the benefits of increased spontaneous emission rates.

The possibility of using direct pumping into the emitting level of the Nd3+ ion in magnesium-compensated strontium lanthanum. aluminate (Sr1-xLax-yNdyMgxAl12-xO19) to improve 900 nm F-4(3/2) -> I-4(9/2) laser emission is discussed. Selection of the composition parameters x and y for optimization of laser emission and reduction of heat generation is based on the spectroscopic and crystal growth characteristics. Pumping in the 865.5 nm absorption band I-4(9/2)(Z(1)) F-4(3/2)(R-1) transforms the laser process into a quasi-two-level scheme of very low (below 4%) quantum defects. A very high slope efficiency (over 84%) for 901 nm continuous-wave laser emission is demonstrated with Ti:sapphire laser pumping in this band for a crystal with x = 0.4 and y = 0.05. (c) 2006 Optical Society of America.

La2/3Ca1/3MnO3 (LCMO) nanowires were prepared using a sol-gel process and an anodically oxidized aluminum template. Scanning electron microscopy (SEM) shows that the nanowires are almost parallel and their diameter is around 40 nm. The temperature dependence of the electron spin resonance (ESR) linewidth is similar to that observed for the case of nanostructured LCMO. From this dependence, the determined magnetic transition temperature, T-C, of the LCMO nanowires, is of the order of 120-130 K.

FexOy-SiO2 nanocomposites were obtained via the sol-gel method, by using three different precursors for the silica matrix. The morphology and the iron phase composition is strongly influenced by the precursors. The presence of magnetically ordered goethite and fayalite is evidenced by low temperature Mossbauer spectroscopy. Subsequent annealing treatments performed on the initial samples have induced the formation of hematite nanoparticles in the silica matrix, mainly on the account of the goethite decomposition. The total amount and the size distribution of the hematite nanoparticles can be controlled via the initial precursors and the subsequent annealing conditions. The simultaneous analysis of the iron phase composition and of the local magnetic interactions in the analysed samples is performed.

The electrochemical deposition in ion track nanoporous membranes was employed for ZnO micro and nanowires preparation. A ZnNO3 bath was employed for the deposition, performed at -800 mV (vs. SCE) and at temperatures around 90 degrees C. Scanning and transmission electron microscopy were used to characterize the wires from a morphological point of view. Electron and X-ray diffraction were employed for the characterization of materials from the point of view of structure. The technique allowed the fabrication of nanowire arrays with good morphological and structural quality.

Near surface disposal is considered a suitable option for the disposal of short-lived low and intermediate level waste (LILW) containing radionuclides which decay to insignificant radiation levels within a few decades or centuries. LILW containing limited concentrations of long-lived radionuclides may also be disposed of in near surface facilities. The main radionuclides in short lived LILW are Cs-137 and Sr-90 and therefore, a period of 300 years for the post-closure institutional controls would correspond to about ten half-lives of these radionuclides. The longer-lived radionuclides, such as C-14, I-129, Tc-99 will continue to be released even after that period due to the engineering barriers degradation. The paper presents the post closure radiological impact of LIL waste disposal due to the C-14, one of the long life radionuclides presented in the LILW generated at Cernavoda Nuclear Power Plant.

In this paper, we have studied the structure and the phase transformations in thin films (obtained by evaporation from gamma-irradiated polyethylene bulks - ageing polymer) before and after laser irradiation. We made a comparison between the following samples: A - thin films obtained from gamma-irradiated polyethylene bulk and not subjected to laser irradiation; B - thin films obtained from gamma-irradiated polyethylene bulk and subjected to laser irradiation. We have revealed many modifications in the dielectric and structural properties of the thin films, depending on the dose, dose rate and the time of laser irradiation (in the case of samples B). The thickness of all deposited films was 90 nm. The samples (non-irradiated or irradiated) were analysed by optical microscopy (OM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM), in combination with selected area electron diffraction (SAED). We have also presented the structure of non-aged and non-irradiated thin polyethylene films (control polyethylene film), in which we observed a particularly puzzling phase between an incipient spherulitic phase and a fine structure of the spherulitic phase (specifically for thin PE films structure). After gamma- and laser irradiations, we observed a strong modification of the structure. The spherulitic phase was transformed. We observed large, amorphous, transparent crystals containing many defects, carbon precipitates, the beginning of crystallisation revealed by electron diffraction, treeing and breakdown figures (usually after laser irradiation). Copyright (C) 2006 John Wiley & Sons, Ltd.