Publications

We report experimental data that indicate an anti-Stokes Raman emission, reminiscent of coherent anti-Stokes raman scattering. It originates from a wave mixing process between the incident laser light (omega(l)) and Stokes Raman light (omega(s)) generated by a surface enhanced Raman scattering (SERS) mechanism. The variation of anti-Stokes SERS spectra of single-walled carbon nanotubes, copper phthalocyanine, and poly(bithiophene) as a function of the film thickness, the laser excitation intensity, and the numerical aperture of the microscopic objective used for collecting the scattered light demonstrate the described phenomenon.

A scanning Hall probe microscope (SHPM) with an effective spatial resolution of 1 similar to mu m has been used to study the local induction in high quality superconducting Bi2Sr2CaCu2O8+delta single crystals at high temperatures and low magnetic fields. We observed, for the first time to our knowledge, an anomalous splitting of the peak of first full penetration of magnetic field, We discuss the observed splitting, which is connected to the effects of surface and geometrical barriers on the vortex lattice.

Scanning Hall probe microscopy and magnetometry have been used to study pancake vortices (PV's) in highly anisotropic Bi2Sr2CaCu2O8+delta (BSCCO) thin films. For small perpendicular applied fields we observe well-defined PV stacks which are randomly pinned due to a high density of relatively strong pinning centers in the films. When a strong in-plane magnetic field is added images reveal stripelike flux structures which are quite closely aligned to the in-plane field direction. We conclude that this is a manifestation of Josephson vortex (JV) "decoration" by PV's, which was recently demonstrated in highly ordered BSCCO single crystals in the crossing lattices regime, allowing independent estimates of the anisotropy parameter to be made. This interpretation is supported by the observation that the presence of an in-plane field suppresses the irreversible magnetization of thicker films. Estimates of the JV-PV crossing force and the PV pinning force are found to be comparable in magnitude and fully consistent with this scenario. We believe that this is the first confirmation of the existence of interacting crossing vortex lattices in strongly pinning BSCCO thin films and could find potential applications in superconducting devices.

The effects produced by heavy ion irradiation in KBr:Ag and KCl:Ag crystals are investigated using optical spectroscopy. For KCl, the results are compared with the effects obtained in the pure crystals. After irradiation with heavy ions up to 11.2 MeV/u specific energy, the absorption bands suffer a series of changes, related to the structure of defects and also to their dimensions. In the high Ag concentrated samples, the Ag+ ions are changing their valence to Ag- while in the samples containing Ag nanoclusters the irradiation induces changes in the nanocluster size.

Growth of such non-superconducting whiskers [Sr2.24Ca0.4Al2Ox, (Ca0.8-0.85Sr0.15-0.1)(2)CuO3, CuO, or Bi2.44Sr2Ca1.3-2Cu6.9-9.95Al0.35-0.46Ox (Cu-rich whiskers)] formed during the growth of Bi-2212 superconducting whiskers from powder or glassy substrates, is discussed. These whiskers are likely to grow from the bottom end, and there is a tight relationship with the growth of the Bi-2212 whiskers. A general reaction-path model for the whisker growth in the BSCCO system, independent of the type of the catalytic impurity and substrate, is proposed. When whiskers are grown under magnetic fields, up to 10 T, changes in the whisker size, aspect ratio, and morphology are observed.

We study the carrier capture and relaxation due to Coulomb scattering in group-III nitride quantum dots on the basis of population kinetics. For the states involved in the scattering processes the combined influence of the quantum-confined Stark effect and many-body renormalizations is taken into account. The charge separation induced by the built-in field has important consequences on the capture and relaxation rates. It is shown that its main effect comes through the renormalization of the energies of the states involved in the collisions and leads to an increase in the scattering efficency.

A design of a planar dual-mode filter is proposed and developed for satellite and wireless communication systems. The novelty of the proposed structure consists of replacing simple diagonal design with a starlike one. This offers the ability of controlling the central frequency and the bandwidth. The filter was implemented on Rogers substrate with 10.8 dielectric constant. The proposed filter structure is 37% smaller in size in comparison with traditional dual mode filters. (c) 2005 Optical Society of America.

LaNiSn and NdNiSn compounds and their deuterides have been studied by variable temperature Sn-119 Mossbauer spectroscopy. The hyperfine parameters obtained experimentally are in good agreement with those derived from first principle calculations. The enlargement of quadrupole splitting observed for LaNiSn after deuteration confirms the lower symmetry of electron density around tin atoms indicated by the calculation of partial Sn-p density of states (DOS). Magnetic ordering is observed at low temperature in deuterided NdNiSn.

Experimental data indicating an anti-Stokes Raman emission, reminiscent of coherent anti-Stokes Raman scattering (CARS), that originates in a wave-mixing process between the incident laser light (omega(1)) and Stokes Raman light (omega(s)) generated by a surface enhanced Raman scattering (SERS) mechanism are reported. The variation of anti-Stokes SERS spectra of single-walled carbon nanotubes (SWNTs) and copper phthalocyanine (CuPc) as a function of the film thickness, laser excitation intensity and numerical aperture of the microscopic objective used for collecting the scattered light are presented as experimental arguments.

The influence of preliminary treatment in hydrogen plasma on elimination of radiation defects and formation of thermal donors has been studied in detector structures made of standard float zone silicon. The detectors were irradiated with 3.5MeV electrons and annealed at temperatures of 50-350 degrees C. It has been found that preliminary hydrogenation at 300 degrees C leads to disappearance of divacancies and vacancy-oxygen complexes at lower annealing temperatures. The annealing of hydrogenated and irradiated crystals is accompanied by hydrogen redistribution and formation of hydrogen-related donors. (c) 2005 Elsevier B.V. All rights reserved.