National Institute Of Materials Physics - Romania

To enhance the spectral response of solar cells, an experimental study on LaPO4:0.01Ce(3+)/xNd(3+) (x = 0, 2, 4 mol%) was carried out, where structural and morphological properties of the prepared samples were well characterized by the means of X-ray diffraction, Fourier transform infrared spectroscopy, and scanning electronic microscope. Additionally, the photoluminescence behavior of phosphors in ultraviolet-visible (UV-VIS) and Near-infrared (NIR) regions were investigated to confirm the energy transfer (ET) from Ce3+ to Nd3+. Moreover, the quantum efficiency of Ce3+/Nd3+-co-doped samples was estimated as high as similar to 172% and the possible ET process was described. Accordingly, the LaPO4:Ce3+/Nd3+ phosphors can convert the UV light (275 nm) into NIR photons (approx. 1059 nm) through the possible two-pathway energy transfer processes from Ce3+ sensitizer ions to Nd3+ activators. Obtained NIR down-conversion emissions are suitable for improving the conversion efficiency of c-Si solar cells.

Group IV quantum dots (QDs) in HfO2 are attractive for non-volatile memories (NVMs) due to complementary metal-oxide semiconductor (CMOS) compatibility. Besides the role of charge storage centers, SiGeSn QDs have the advantage of a low thermal budget for formation, because Sn presence decreases crystallization temperature, while Si ensures higher thermal stability. In this paper, we prepare MOS capacitors based on 3-layer stacks of gate HfO2/floating gate of SiGeSn QDs in HfO2/tunnel HfO2/p-Si obtained by magnetron sputtering deposition followed by rapid thermal annealing (RTA) for nanocrystallization. Crystalline structure, morphology, and composition studies by cross-section transmission electron microscopy and X-ray diffraction correlated with Raman spectroscopy and C-V measurements are carried out for understanding RTA temperature effects on charge storage behavior. 3-layer morphology and Sn content trends with RTA temperature are explained by the strongly temperature-dependent Sn segregation and diffusion processes. We show that the memory properties measured on Al/3-layer stack/p-Si/Al capacitors are controlled by SiGeSn-related trapping states (deep electronic levels) and low-ordering clusters for RTA at 325-450 degrees C, and by crystalline SiGeSn QDs for 520 and 530 degrees C RTA. Specific to the structures annealed at 520 and 530 degrees C is the formation of two kinds of crystalline SiGeSn QDs, i.e., QDs with low Sn content (2 at.%) that are positioned inside the floating gate, and QDs with high Sn content (up to 12.5 at.%) located at the interface of floating gate with adjacent HfO2 layers. The presence of Sn in the SiGe intermediate layer decreases the SiGe crystallization temperature and induces the easier crystallization of the diamond structure in comparison with 3-layer stacks with Ge-HfO2 intermediate layer. High frequency-independent memory windows of 3-4 V and stored electron densities of 1-2 x 10(13) electrons/cm(2) are achieved.

Owing to its unique biological and physicochemical properties, hydroxyapatite (HAp) represents one of the most extensively studied biomaterials for biomedical applications. It is well known that Candida is currently one of the fungi frequently involved in the onset and development of post-implant infections and, owing to the appearance of antifungal resistance, it is quite difficult to treat despite all the tremendous efforts made in this regard by the scientific world. Therefore, in this context, we report for the first time in this paper, the development and characterization of europium-doped thin films (5EuHAp, x(Eu) = 0.05) on a Si substrate by a spin-coating method. The results of ultrasound (US), zeta (zeta) potential, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), scanning electron microscopy (SEM), and Fourier-transform infrared spectroscopy (FTIR) studies are presented. The XRD studies conducted on 5EuHAp suspension revealed the nanometric dimensions of the particles and sample purity. In addition, a moderate stability of the 5EuHAp suspension was observed. XPS measurements revealed the presence of Eu 3d in the 5EuHAp thin films. In the SEM micrographs, the surface uniformity and the absence of the surface defects could be observed. Moreover, the results of the FTIR studies showed the presence of the vibrational bands specific to the HAp structure in the studied sample. The antifungal activity of the HAp and 5EuHAp suspensions and coatings was evaluated using the Candida albicans ATCC 10231 (C. albicans) fungal strain. The qualitative assays of the antifungal properties of HAp and 5EuHAp coatings were also visualized by SEM and CLSM. The antifungal studies revealed that both 5EuHAp suspensions and coatings exhibited noticeable antifungal activity against C. albicans cells.

Despite being the lightest element in the periodic table, hydrogen poses many risks regarding its production, storage, and transport, but it is also the one element promising pollution-free energy for the planet, energy reliability, and sustainability. Development of such novel materials conveying a hydrogen source face stringent scrutiny from both a scientific and a safety point of view: they are required to have a high hydrogen wt.% storage capacity, must store hydrogen in a safe manner (i.e., by chemically binding it), and should exhibit controlled, and preferably rapid, absorption-desorption kinetics. Even the most advanced composites today face the difficult task of overcoming the harsh re-hydrogenation conditions (elevated temperature, high hydrogen pressure). Traditionally, the most utilized materials have been RMH (reactive metal hydrides) and complex metal borohydrides M(BH4)(x) (M: main group or transition metal; x: valence of M), often along with metal amides or various additives serving as catalysts (Pd2+, Ti4+ etc.). Through destabilization (kinetic or thermodynamic), M(BH4)(x) can effectively lower their dehydrogenation enthalpy, providing for a faster reaction occurring at a lower temperature onset. The present review summarizes the recent scientific results on various metal borohydrides, aiming to present the current state-of-the-art on such hydrogen storage materials, while trying to analyze the pros and cons of each material regarding its thermodynamic and kinetic behavior in hydrogenation studies.

We report the mechanical behavior of a bulk boron ceramic prepared by spark plasma sintering of commercially available beta-boron powder. In order to fabricate polycrystalline boron ceramic, we used a protective tantalum foil reacted with carbon from the graphite die or graphite foil forming a thin layer of TaB2 and TaC covering the boron specimen. This is the first study to show the high-temperature flexural strength, toughness, and Young's moduli of boron up to 1400 degrees C. At 1600 degrees C and above, boron will react with testing environment forming an outer shell. The flexural strength and fracture toughness at room temperature reached an average of 340 MPa and 4.1 MPa m (1/2) , respectively. Despite showing clear signs of plastic deformation on the strain-stress curves, the yield strength of the monolithic boron ceramic exceed 1 GPa at 1200 degrees C. It was determined that fracture at elevated temperatures follows a quasi-transgranular mechanism, where the sub-grains of the boron fracture as plate-like structures. An interpretation for the observed fracture behavior was proposed.

In the last decade orthorhombic hafnia and zirconia films have attracted tremendous attention arising from the discovery of ferroelectricity at the nanoscale. However, an initial wake-up pre-cycling is usually needed to achieve a ferroelectric behaviour in these films. Recently, different strategies, such as microstructure tailoring, defect, bulk and interface engineering, doping, NH3 plasma treatment and epitaxial growth, have been employed to obtain wake-up free orthorhombic ferroelectric hafnia and zirconia films. In this work we review recent developments in obtaining polar hafnia and zirconia-based thin films without the need of any wake-up cycling. In particular, we discuss the rhombohedral phase of hafnia/ zirconia, which under a constrained environment exhibits wake-up-free ferroelectric behaviour. This phase could have a strong impact on the current investigations of ferroelectric binary oxide materials and pave the way toward exploiting ferroelectric behaviour for next-generation memory and logic gate applications. Crown Copyright (c) 2022 Published by Elsevier Ltd. All rights reserved.

Active semiconductor layers of TiO2 were synthesized via pulsed laser deposition in He, N-2, O-2, or Ar to manufacture DSSC structures. As-prepared nanostructured TiO2 coatings grown on FTO were photosensitized by the natural absorption of the N719 (Ruthenium 535-bis TBA) dye to fabricate photovoltaic structures. TiO2 photoanode nanostructures with increased adsorption areas of the photosensitizer (a combination with voluminous media) were grown under different deposition conditions. Systematic SEM, AFM, and XRD investigations were carried out to study the morphological and structural characteristics of the TiO2 nanostructures. It was shown that the gas nature acts as a key parameter of the architecture and the overall performance of the deposited films. The best electro-optical performance was reached for photovoltaic structures based on TiO2 coatings grown in He, as was demonstrated by the short-circuit current (Isc) of 5.40 mA, which corresponds to the higher recorded roughness (of 44 +/- 2.9 nm RMS). The higher roughness is thus reflected in a more efficient and deeper penetration of the dye inside the nanostructured TiO2 coatings. The photovoltaic conversion efficiency (eta) was 1.18 and 2.32% for the DSSCs when the TiO2 coatings were deposited in O-2 and He, respectively. The results point to a direct correlation between the electro-optical performance of the prepared PV cells, the morphology of the TiO2 deposited layers, and the crystallinity features, respectively.

The role of Ag addition on the structural, dielectric, and mechanical harvesting response of 20%(xAg - (1 - x)BaTiO3) - 80%PVDF (x = 0, 2, 5, 7 and 27 vol.%) flexible composites is investigated. The inorganic fillers were realized by precipitating fine (similar to 3 nm) silver nanoparticles onto BaTiO3 nanoparticles (similar to 60 nm average size). The hybrid admixtures with a total filling factor of 20 vol.% were embedded into the PVDF matrix. The presence of filler enhances the amount of beta-PVDF polar phase and the BaTiO3 filler induces an increase of the permittivity from 11 to 18 (1 kHz) in the flexible composites. The addition of increasing amounts of Ag is further beneficial for permittivity increase; with the maximum amount (x = 27 vol.%), permittivity is three times larger than in pure PVDF (epsilon(r) similar to 33 at 1 kHz) with a similar level of tangent losses. This result is due to the local field enhancement in the regions close to the filler-PVDF interfaces which are additionally intensified by the presence of silver nanoparticles. The metallic addition is also beneficial for the mechanical harvesting ability of such composites: the amplitude of the maximum piezoelectric-triboelectric combined output collected in open circuit conditions increases from 0.2 V/cm(2) (PVDF) to 30 V/cm(2) for x = 27 vol.% Ag in a capacitive configuration. The role of ferroelectric and metallic nanoparticles on the increasing mechanical-electric conversion response is also been explained.

This paper presents the effect of Mn2+ substitution for Co2+, in CoFe2O4 embedded in SiO2 matrix, on the structural, surface, morphological and magnetic properties. X-ray diffraction (XRD) and Mossbauer spectroscopy indicate the presence of a nanocrystalline mixed cubic spinel. In all cases, for the nanocomposites (NCs) heat-treated at 200 degrees C, a single, low crystalline ferrite phase was remarked, while for the other heat-treatment temperatures up to 1200 degrees C and with increasing Mn content, the secondary phase of alpha-Fe2O3 appears, accompanied also by the secondary phase of SiO2 at 1200 degrees C. The Fourier transform infrared (FT-IR) spectroscopy confirms the consumption of starting metallic nitrates, the formation of Co-O, Mn-O, Fe-O bonds in ferrites@SiO2 matrix. The Mossbauer spectra show the characteristic magnetic patterns of Co and Mn spinels. According to the atomic force microscopy (AFM) analysis, the particle size increases from 15 to 80 nm with the increase of Mn content. The specific surface area varies in the range 150-450 m(2)/g due to the substitution of Co2+ ion with Mn2+ ion and decreases with increasing heat treatment temperature, reaching values below 1 m(2)/g at 1200 degrees C. All NCs have pores within the mesoporous range, with high dispersion of pores' sizes. Furthermore, the release of fine nanoparticles in aqueous environment is facilitated by the powders' mesoporous structure preserved at 200, 500 and 800 degrees C heat treatment temperatures. The porous network collapse after heat treatment at 1200 degrees C leads to releasing of bigger nanoparticles, in good agreement with AFM observation. Magnetization, coercivity and anisotropy evolve proportionally with the particle size for the NCs heat-treated at 800 degrees C (M-s = 18.9-36.3 emu/g; M-R = 3.05-14.1 emu/g, H-c = 31.83-53.2 kA/m, K= 0.378.10(-3) -1.21.10(-3) erg/cm(-1)) and inverse proportionally for those heat-treated at 1200 degrees C (M-s = 30.7-19.4 emu/g; M-R = 11.60 7.20 emu/g, H-c= 127.3-15.9 kA/m, K= 2.45.10(-3)-0.19.10(-3) erg/cm(-1)). The NCs with high Mn content heat-treated at 1200 degrees C show superparamagnetic behavior, while those with low Mn content display ferrimagnetic behavior. (C) 2021 Elsevier B.V. All rights reserved.

Anodization was used to obtain a nanotubular TiO2 photoanode on F-SnO2 glass. Subsequent annealing in the CH4 atmosphere promoted the C-doping and improved the crystallinity of the TiO2 nanotubes. The pulsed laser deposition was applied to cover the nanotubes with Bi2O3, serving as a hole transport material. X-ray photoelectron spectroscopy analyses of the doped samples reveal a shift in the valence band's maximum position towards lower binding energy as compared to those observed for the undoped samples (annealed in the air). The doping positively affects the absorption by shifting the absorption edge to 567 nm. I-V measurements under illumination show that the C-doping of TiO2 increases the current density following the absorbance results. The highest open circuit voltage was reached for the samples with the 300 degrees C-deposited Bi2O3 layer, pointing to better quality of the p-n junction, hence of the contact between Bi2O3 and TiO2. This in situ annealing provided the formation of close contact between Bi2O3 and TiO2, which enabled a faster charge transport as compared to the contact obtained with no annealing or even with post annealing.