National Institute Of Materials Physics - Romania

The second magnetization peak (SMP) in the fourfold symmetric superconducting single crystals (such as iron pnictides and tetragonal cuprates) has been attributed to the rhombic-to-square transition (RST) of the quasi-ordered vortex solid (the Bragg vortex glass, BVG). This represents an alternative to the pinning-induced BVG disordering as the actual SMP mechanism. The analysis of the magnetic response of BaFe2(As1-xPx)(2) specimens presented here shows that the SMP is not generated by the RST. However, the latter can affect the pinning-dependent SMP onset field if this is close to the (intrinsic) RST line, through the occurrence of a "shoulder" on the magnetic hysteresis curves m(H), and a maximum in the temperature variation of the DC critical current density. These features disappear in AC conditions, where the vortex system is dynamically ordered in the RST domain, emphasizing the essential role of vortex dislocations for an efficient accommodation of the vortex system to the pinning landscape and the SMP development. The m(H) shoulder is associated with a precipitous pinning-induced proliferation of dislocations at the RST, where the BVG elastic "squash" modulus softens. The DC magnetization relaxation indicates that the pinning-induced vortex system disordering continues above the RST domain, as the basic SMP mechanism.

We obtained carbon nanotubes (CNTs) doped polymer dispersed liquid crystal (PDLC) films using the nematic E7 and polymethyl methacrylate, a composite that combines the benefic characteristic of the liquid crystals (LC) and carbon nanoparticles. The clearing temperatures recorded by differential scanning calorimetry for the PDLC blends were found to be lower than the value recorded for pure E7 LC mixture with no significant impact of the CNTs' concentration. Broadband dielectric spectroscopy (DS) measurements were performed in the (10(-1) / 107) Hz frequency range, in the temperature domain (280-350) K. From the DS study, a two order magnitude variation of the conductivity over the entire temperature range was observed. The presence of CNTs results in an increase of electrical conductivity, with increasing concentration. Because the loss tangent spectra have complex shapes, they were fitted using the generalized Havriliak-Negami functions, and the characteristic relaxation times were extracted. The dependency of the characteristic relaxation time on temperature was modeled using the Vogel-Fulcher-Tammann function, and it showed a temperature variation according to the Arrhenius law. The increase of the CNT concentration increases the activation energy of the molecular electric dipoles of the LC. The interface LC-polymer interactions influence the nematic to isotropic phase transition of the LC.

Organic bulk heterojunctions (BHJ) based on zinc phthalocyanine (ZnPc), fullerene compounds (C60 fullerene and [6,6]-phenyl C71 butyric acid methyl ester (PC70BM)), and 5,6,11,12-tetraphenylnaphthacene (rubrene) were fabricated through the matrix-assisted pulsed-laser evaporation (MAPLE) technique. Thus, ZnPc:C60 and ZnPc:PC70BM binary BHJ and ZnPc:rubrene:PC70BM ternary BHJ were deposited as thin films on various substrates. The preservation of the chemical structure of the organic compounds during the MAPLE deposition was confirmed by infrared spectroscopy. The structural, optical, and morphological properties of the deposited layers were investigated by X-ray diffraction (XRD), UV-Vis spectroscopy, photoluminescence (PL), field emission scanning electron microscopy (FESEM), and atomic force microscopy (AFM), respectively. Further, the electrical properties of the developed structures based on ZnPc:C60, ZnPc:PC70BM, and ZnPc:rubrene:PC70BM were evaluated. The J-V characteristics of the organic structures, recorded under illumination, show that an increase in the open-circuit voltage (V-OC) is achieved in the case of the ternary blend in comparison with that obtained for the binary blends. The results evidenced that MAPLE-deposited thin films containing binary and ternary organic bulk heterojunctions can find applications in the field of photovoltaic devices.

xHfO(2)-(1-x)alpha-Fe2O3 (x = 0.1, 0.3, 0.5 and 0.7) nanoparticles system was obtained using mechanochemical activation by high energy ball milling for time periods ranging from 0 to 12 h. X-ray diffraction patterns revealed the presence of two phases, a hafnium-doped hematite and an iron-doped hafnia, which competed with each other to form a solid solution. The trend observed in the lattice parameters using Rietveld refinement was consistent with differences in ionic radii between Hf and Fe. Crystallite sizes for both hematite and hafnia were analyzed as function of milling time using the Scherrer method and found to decrease down to similar to 15 nm for all molar concentrations used. Mossbauer spectroscopy revealed the presence of 1-5 sextets corresponding to different numbers of Hf nearest neighbors of Fe in the hematite structure. The different hyperfine magnetic fields could be resolved in the model of local atomic environment. Substitutions of Fe in hafnia gave rise to a nonmagnetic phase represented by a quadrupole split doublet, whose abundance was found to increase with ball milling time. Hysteresis loops recorded at 5 K showed that the Hf-doped system does not saturate in an applied magnetic field of 5 T. The Morin transition was observed during zero-field-cooling-field cooling (ZFC-FC) in an external magnetic field of 200 Oe. Differential scanning calorimetry with thermal gravimetric analysis (DSC-TGA) evidenced an exothermic peak for the starting oxides and an endothermic peak for the solid solution.

The nature of dark matter is still an open problem. The simplest assumption is that gravity is the only force certainly coupled to dark matter and thus the micro black holes could be a viable candidate. We investigated the possibility of direct detection of charged micro black holes with masses around and upward the Planck scale (10(-5) g), ensuring a classical gravitational treatment of these objects in the next generation huge LAr detectors. We show that the signals (ionization and scintillation) produced in LAr enable the discrimination between micro black holes and other particles. It is expected that the trajectories of these micro black holes will appear as crossing the whole active medium, in any direction, producing uniform ionization and scintillation on the whole path.

Cu2ZnSnS4 (CZTS) is an economically and environmentally friendly alternative to other toxic and expensive materials used for photovoltaics, however, the variation in the composition during synthesis is often followed by the occurrence of the secondary binary and ternary crystalline phases. These phases produce changes in the optical absorption edge important in cell efficiency. We explore here the secondary phases that emerge in a combinatorial Cu2S-ZnS-SnS2 thin films library. Thin films with a composition gradient were prepared by simultaneous magnetron sputtering from three binary chalcogenide targets (Cu2S, SnS2 and ZnS). Then, the samples were crystallized by sulfurization annealing at 450 degrees C under argon flow. Their composition was measured by energy dispersive X-ray spectroscopy (EDX), whereas the structural and optical properties were investigated by grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy and optical transmission measurements. As already known, we found that annealing in a sulfur environment is beneficial, increasing the crystallinity of the samples. Raman spectroscopy revealed the presence of CZTS in all the samples from the library. Secondary crystalline phases such as SnS2, ZnS and Cu-S are also formed in the samples depending on their proximity to the binary chalcogenide targets. The formation of ZnS or Cu-S strongly correlates with the Zn/Sn and Cu/Zn ratio of the total sample composition. The presence of these phases produces a variation in the bandgap between 1.41 eV and 1.68 eV. This study reveals that as we go further away from CZTS in the composition space, in the quasi-ternary Cu2S-ZnS-SnS2 diagram, secondary crystalline phases arise and increase in number, whereas the bandgap takes values outside the optimum range for photovoltaic applications.

Titanium diffusion in tungsten is an undesirable phenomenon that may cause the drop of mechanical and thermal fatigue properties of tungsten base material and components in future fusion reactors. To avoid such as problematic, the effectiveness of two different diffusion coatings, deposited onto W base materials by means of RF magnetron sputtering (Cr and V layers), has been studied to analyze its impact on the operative brazing aspects of the W-Eurofer joints. Coatings with two different thicknesses were deposited over tungsten base material prepared using different surface roughness (0.08 and 0.09 mu m). The results indicated that Ti diffusion into tungsten base material after the brazing process was suppressed in all cases while the consecution of full metallic continuity was reached. However, both Cr and V layers were dissolved during the brazing process due to the high solubility of both elements into beta-Ti. Mechanical properties of the joints dropped especially when Cr is used but a strength higher than 100 MPa was obtained in the case of using V layers.

Nanocrystalline PdO films have been characterized by X-ray diffraction, scanning electron microscopy, and electron probe microanalysis. The results demonstrate that thermal oxidation in an O-2 atmosphere causes similar to 35-nm-thick nanocrystalline Pd films on SiO2/Si(100) substrates to undergo a sequence of phase transformations resulting in PdO formation, followed by PdO decomposition into metallic Pd atT > 1120 K. In the range 670-970 K, theaandctetragonal cell parameters of the nanocrystalline PdO films increase monotonically with increasing temperature. The present and previously reported data have been used to construct a model for the unit cell in the crystal structure of palladium(II) oxide. Based on the quasi-chemical approach, we propose a model that accounts for the observed increase in the tetragonal cell parameters and thep-type conductivity of the nanocrystalline PdO films in terms of the formation of excess interstitial oxygen atoms.

In this work, new evidence for the photodegradation reactions of acetaminophen (AC) is reported by photoluminescence (PL), Raman scattering and FTIR spectroscopy. Under excitation wavelength of 320 nm, AC shows a PL band in the spectral range of 340-550 nm, whose intensity decreases by exposure to UV light. The chemical interaction of AC with the NaOH solutions, having the concentration ranging between 0.001 and 0.3 M, induces a gradual enhancement of the photoluminescence excitation (PLE) and PL spectra, when the exposure time of samples at the UV light increases until 140 min, as a result of the formation of p-aminophenol and sodium acetate. This behavior is not influenced by the excipients or other active compounds in pharmaceutical products as demonstrated by PLE and PL studies. Experimental arguments for the obtaining of p-aminophenol and sodium acetate, when AC has interacted with NaOH, are shown by Raman scattering and FTIR spectroscopy.

In this work, the ferroelectric and fatigue characteristics of Au/0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3(BCZT)/Si metal-ferroelectric-semiconductor (MFS) structures are investigated. Moreover, the effect of introducing a thin dielectric HfO2-Al2O3 (HAO) layer with different thicknesses between the BCZT layer and the Si substrate on the ferroelectric characteristics in the metal-ferroelectric-insulator-semiconductor (MFIS) configuration is evaluated. It is evidenced that the insertion of the HAO layer with a thickness of 8 nm improves the memory window of the capacitance-voltage (C-V) curves by 106% compared to the value obtained in the MFS structure and reduces the leakage currents. Furthermore, the Au/BCZT/HAO (8 nm)/Si structure shows a remarkable remnant polarization (P-r) of 7.8 mu C/cm(2), with a coercive voltage of 1.9 V. The obtained value for P-r corresponds to a six times enhancement when compared to the value obtained in the Au/BCZT/Si structure. In addition, the fatigue studies reveal that the P-r obtained in the Au/BCZT/HAO/Si structure slightly decreases (3%) with continuous cycling, up to 10(9) cycles. The present work evidences that Au/BCZT/HAO/Si structures are promising for nonvolatile memory applications.