National Institute Of Materials Physics - Romania

Structurally disordered Pr3+-doped Ca-3(Ta,Ga)(5)O-12 - Pr:CTGG single crystal was grown by the Czochralski technique for the first time and its spectroscopic properties were investigated. Modified Judd-Ofelt analysis was applied to determine spectroscopic and laser emission characteristics. Based on low-temperature absorption and emission spectra, the partial energy levels of Pr3+ ions have been obtained and a multicenter structure of the optical spectra was highlighted. The electron-phonon interactions were also observed in the emission spectra corresponding to the P-3(0) -> H-3(4) transition under different excitation wavelengths. The fluorescence decays of the P-3(0) and D-1(2) levels were measured. The emission cross-sections corresponding to the P-3(0) -> H-3(4) (486.5 nm) and P-3(0) -> F-3(2) (652.7 nm) transitions were found to be sigma(em) = 19 x 10(-20) cm(2) and crem = 15 x 10(-20) cm(2), respectively. The values for other parameters that may predict the possibility of achieving efficient laser emission, especially at 486.5 nm, such as quantum efficiency (eta = 50 %), gain bandwidth (sigma(em) x Iota lambda(eff), = 32.2 x 10(-26) cm(3)), and optical gain (sigma(em) x tau(meas) = 12.86 x 10(-25) cm(2) s) were determined. The obtained results indicate that the Pr:CTGG crystal has a high potential for obtaining efficient laser emission in the blue domain.

In this work, the effects of 60Co y -ray irradiation on high resistivity p -type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and 2 MGy. Both macroscopic (I-V, C-V) and microscopic investigations, by means of Thermally Stimulated Current (TSC) and Deep Level Transient Spectroscopy (DLTS) techniques, were conducted to characterize the radiation -induced changes. The investigated diodes were manufactured on high resistivity p -type Float Zone (FZ) silicon and were further classified into two types based on the isolation technique between the pad and guard ring: p -stop and p -spray. After irradiation, the macroscopic results of current-voltage and capacitance-voltage measurements were obtained and compared with existing literature data. Additionally, the microscopic measurements focused on the development of the concentration of different radiation -induced defects, including the Boron interstitial -Oxygen interstitial (BiOi) complex, the Carbon interstitial -Oxygen interstitial (CiOi) defect, the H40K, and the so-called I*P. To investigate the thermal stability of induced defects in the bulk, isochronal annealing studies were performed in the temperature range of 100 degrees C to 300 degrees C. These annealing processes were carried out on diodes irradiated with doses of 1 and 2 MGy. Furthermore, in order to investigate the unexpected results observed in the C-V measurements after irradiation with high dose values, the surface conductance between the pad and guard ring was measured as a function of both dose and annealing temperature.

The development of new materials for short-wavelength infrared (SWIR) optical sensors is of high importance for the fast development of different applications, as, for example, Internet of Things, road safety, and pollution monitoring. Group IV SiGe provides more sustainable As-, Cd-, and Pb-free nanomaterials that are cheaper and ecologic and offer easy integration with CMOS technology. This Review is on Ge and SiGe quantum dots/nanocrystals (QDs/NCs) embedded in dielectrics for VIS-SWIR photodetection, in which we highlight and discuss photocurrent mechanisms, correlation of photodetection parameters and characteristics with crystalline structure, morphology and energy bandgap, and applications as photodetectors, optical sensors, phototransistors, and solar cells. The embedding matrix induces NC surface passivation, stress field, and nanocrystallization effects and brings specific advantages depending on the matrix material. SiGe NCs in oxides for VIS-SWIR sensing represents a niche domain, showing high photosensitivity (photocurrent) in SWIR up to 1.8 mu m at room temperature and 2 mu m at 100 K, deeper in SWIR than Ge. By alloying Ge with a small content of Si, NC thermal stability is much improved as the detrimental Ge fast diffusion in oxides is hindered and SWIR photosensing is enhanced due to light absorption in Ge-rich SiGe NCs.

Magnesium ions, MgO nanoparticles and thin films, magnesium alloys and cerium compounds are materials intensively studied due to their corrosion protection, antibacterial and pharmacological properties. In this work, we have designed, prepared and investigated, novel thin films of MgO doped with cerium, deposited on Mg alloy (AZ31) for temporary implants, in order to enhance their life time. More precisely, we report on microstructure and corrosion behavior of MgO pure and doped with 0.1 at % Ce films, fabricated by sol-gel route coupled with spin-coating technique, on AZ31 alloy substrate. A modified sol-gel method that start from magnesium acetylacetonate, cerium nitrate and 2-methoxyethanol (as a stabilizer for the sol) was been used successfully for cerium doped MgO sol precursor preparation. The structure and morphology of the surface of the coatings, before and after immersion for 7-30 d in Hank's solution at 37 degrees C, were characterized by x-ray diffraction (XRD), scanning electron microscopy, high-resolution transmission electron microscope, x-ray photoelectron spectroscopy and Fourier infrared transmittance spectrum (FT-IR). A comparison between the corrosion protection of undoped MgO and MgO doped with 0.1 at % Ce coatings on the AZ31 alloy substrate is performed by electrochemical tests and immersion tests using open circuit potential and electrochemical impedance spectroscopy in Hank's solution, at 37 degrees C. The electrochemical results showed that the protection of the AZ31 alloy substrate against corrosion was better with the doped with 0.1 at % Ce MgO film deposited than with pure MgO coting. The investigations of the films after immersion in Hank's solution, at 37 degrees C, for 7, 21 and 30 d indicated that the grown layer on the film is bone like apatite that suggests a good bioactivity of 0.1 at % Ce-doped MgO coating. Our work demonstrates that the performance corrosion protection of the biodegradable magnesium alloys used for orthopedic applications, in simulated physiological environments (Hank and Ringer) can be enhanced through coating with Ce3+ doped MgO sol-gel thin film.

The CuFeTaTiW multicomponent alloy has been devised as an interlayer thermal barrier in nuclear fusion re-actors. In order to predict the phase constitution of this alloy, two different lines of work were performed: (a) simulation using Molecular dynamics and Monte Carlo and (b) study of the influence of mechanical alloying parameters on the structures formed. The simulation results show that the most stable structure is achieved starting from a bcc type-structure and using Monte Carlo simulation. In fact, in these conditions the separation into two bcc phases Fe-Ta-W and Cu-Ti is predicted at room temperature. However, the experimental preparation of the materials with mechanical alloying revealed that from 2 h of milling a single bcc phase is formed. The structure of the milled powder was not much influenced by the amount of the process control agent and the by the size of the W starting particles, but generally there was formation of Ta2H from the reaction between the powders and the process control agent.

The development of new materials for short-wavelength infrared (SWIR) optical sensors is of high importance for the fast development of different applications, as, for example, Internet of Things, road safety, and pollution monitoring. Group IV SiGe provides more sustainable As-, Cd-, and Pb-free nanomaterials that are cheaper and ecologic and offer easy integration with CMOS technology. This Review is on Ge and SiGe quantum dots/nanocrystals (QDs/NCs) embedded in dielectrics for VIS-SWIR photodetection, in which we highlight and discuss photocurrent mechanisms, correlation of photodetection parameters and characteristics with crystalline structure, morphology and energy bandgap, and applications as photodetectors, optical sensors, phototransistors, and solar cells. The embedding matrix induces NC surface passivation, stress field, and nanocrystallization effects and brings specific advantages depending on the matrix material. SiGe NCs in oxides for VIS-SWIR sensing represents a niche domain, showing high photosensitivity (photocurrent) in SWIR up to 1.8 mu m at room temperature and 2 mu m at 100 K, deeper in SWIR than Ge. By alloying Ge with a small content of Si, NC thermal stability is much improved as the detrimental Ge fast diffusion in oxides is hindered and SWIR photosensing is enhanced due to light absorption in Ge-rich SiGe NCs.

The process of N-doping is frequently employed to enhance the properties of carbon quantum dots. However, the precise requirements for nitrogen precursors in producing high-quality N-doped carbon quantum dots (NCQDs) remain undefined. This research systematically examines the influence of various nitrogen dopants on the morphology, optical features, and band structure of NCQDs. The dots are synthesized using an efficient, eco- friendly, and rapid continuous hydrothermal flow technique. This method offers unparalleled control over synthesis and doping, while also eliminating convention-related issues. Citric acid is used as the carbon source, and urea, trizma base, beta-alanine, L-arginine, and EDTA are used as nitrogen sources. Notably, urea and trizma produced NCQDs with excitation-independent fluorescence, high quantum yields (up to 40%), and uniform dots with narrow particle size distributions. Density functional theory (DFT) and time-dependent DFT modelling established that defects and substituents within the graphitic structure have a more significant impact on the NCQDs' electronic structure than nitrogen-containing functional groups. Importantly, for the first time, this work demonstrates that the conventional approach of modelling single-layer structures is insufficient, but two layers suffice for replicating experimental data. This study, therefore, provides essential guidance on the selection of nitrogen precursors for NCQD customization for diverse applications. This manuscript highlights continuous hydrothermal flow synthesis (CHFS) that directly obtains luminescent nitrogen doped carbon quantum dots using a simple precursor, citric acid, whilst varying the N-dopants to systematically engineer carbon dots with varied but controllable optical characteristics. It reports that a common approach of modelling single-layer structures is insufficient, but two layers suffice to reproduce the experimental data. image

To advance gas sensor technologies, it is essential to identify materials that exhibit both high selectivity and sensitivity. Here, we unravel the gas-sensing capabilities of indium sulfide (InS) nanosheets, particularly in relation to nitrogen dioxide (NO2) detection. Utilizing a synergistic approach that combines in situ and operando experimental methodologies with density functional theory calculations, we demonstrate that these nanosheets offer outstanding sensitivity toward NO2, characterized by a remarkably low detection threshold of 180 ppb at an operational temperature of 350 degrees C. This remarkable sensitivity is ascribed to the electronic charge redistribution around the Fermi level, facilitated by an oxygen-deficient In2O3-x surface layer that forms naturally when the InS surface is exposed to ambient conditions. A pivotal aspect of our investigation was the exploration of the influence of sulfur abstraction on these surface modifications. We demonstrate that sulfur abstraction plays a critical role in the formation and operational efficacy of the In2O3-x layer, thereby acting as a key element in the sensor mechanism. This unique surface chemistry not only amplifies the sensitivity to NO2 but also confers unparalleled selectivity over other gases and volatile organic compounds. Notably, this level of performance exceeds that of other 2D semiconductors and metal oxides, thus establishing InS nanosheets as an ideal platform for high-performance gas sensors suitable for demanding environments. Moreover, unlike many state-of-the-art sensor materials, InS-based sensors can withstand a wider variety of environmental conditions due to their superior water adsorption resistance.