3eFERRO is project for competitive, scalable FeRAM and logic-inmemory designs based on Si-compatible ferroelectric HfxZr1-xO2. The latest results on the materials optimization, logic design and integration into a 16 kbit test vehicle are highly encouraging. The 3eFERRO consortium is researching energy efficient non-volatile memory and logic devices based on Si-compatible ferroelectric HfZrO2 (HZO) to provide advanced embedded solutions for normally-off microcontroller units used in IoT. The consortium is a balanced mix of large technology development laboratories and academia in partnership with ST Microelectronics to address the complex issues associated with materials optimization,circuit design, device fabrication and integration.

https://3eferro.eu/