Andrei NITESCU

Gain-layer degradation from exposure to radiation limits the use of Low-Gain Avalanche Diodes (LGADs) in high energy particle physics detector experiments. Proper understanding of how the gain-layer is altered is not available on a defect level. Only measurements for materials with much lower effective doping concentrations are available. The direct study of the gain-layer is not possible with typical defect spectroscopy measurements like Thermally Stimulated Currents (TSC) and Deep-Level Transient Spectroscopy (DLTS). To combat this problem and gain a better understanding of the processes which degrade LGADs, the Gain-Layer Project was started. Within this project 19050 diodes were produced with various Boron, Phosphorus, Oxygen and Carbon concentrations. The material used is low-resistivity p-type Silicon. The effective doping concentrations are in the order of typical LGAD gain-layers. These diodes will serve the defect community in the coming years for various studies. This article introduces this project with detailed descriptions of the diodes, their flavours and their processing, and reports on results from I-V, C-V, SIMS and DLTS measurements on unirradiated diodes.

Boron-doped silicon detectors used in high radiation environments like the future HL-LHC show a degradation in device performance due to the radiation induced deactivation of the active boron dopant. This effect, known as the so-called Acceptor Removal Effect (ARE), depends on particle type, particle energy and radiation dose and is usually explained by the formation of boron-interstitial-oxygen-interstitial (BiOi) defects that induce a donor-type defect level in the upper part of the Si band gap. Here we present defect characterization studies using Thermally Stimulated Current technique (TSC) and Deep Level Transient Spectroscopy (DLTS) on a set of epitaxially grown p-type silicon diodes of different resistivity, irradiated with 60Co gamma-rays. We used the defect parameters (activation energy, charge carrier capture cross sections and defect concentration) obtained from DLTS experiments for modeling the corresponding TSC spectra, and subsequently compared those with the experimental TSC results. This approach shows that the di-vacancy which is well characterized by DLTS correlates with the so-far unspecified charge emission signal of the X-defect that partially overlaps with the BiOi peak in TSC spectra. Additionally, in order to evaluate the impact of BiOi defect formation on the macroscopic properties of the device, we compared the BiOi defect concentration with the change in the effective carrier concentration Neff obtained from C-V measurements. It shows that the variations in Neff are about twice the changes in the BiOi concentration, which corroborate the assumption of boron deactivation by the formation of the BiOi donor in irradiated p-type Si.

Layers of HfO2 and (Hf,Zr)O2 crystalline nano-particles are synthesized via direct liquid injection atomic layer deposition, and a comprehensive set of structural, chemical, and electrical characterizations is employed to elucidate their phase composition and functional behavior. X-ray photoelectron spectroscopy revealed a compositional contrast between the films: (Hf,Zr)O2 layers contained up to 45% stoichiometric oxide, while pure HfO2 films are dominated by sub-oxides, especially under strongly reducing conditions, in which exclusively sub-oxide phases and p-type semiconducting behavior is revealed. Electrical measurements indicated room-temperature stabilization of polar phases and tetragonal-to-orthorhombic phase transition with a Curie temperature near 200 K. FTIR spectroscopy confirmed the presence of tetragonal and orthorhombic HfO2 phases, providing insight into minor features observed approximate to 30 degrees (2 theta) in X-ray diffraction patterns. Notably, devices incorporating an AlN interlayer demonstrated a significant enhancement in pyroelectric performance, suggesting this strategy to advance the pyroelectric performance of HfO2-based materials, supporting their development for lead-free sensor technologies.

Amyloid beta (A(3) peptide aggregates are well-established biomarkers for Alzheimer's disease, though the complete etiology of this disorder remains elusive. Developing biointerfaces to elucidate the physiological roles of these peptides is essential. This study investigates the aggregation, fibrillation, and interaction of A(3 peptides with conductive, biocompatible nanostructured materials designed for applications involving neuronal cells. Various conductive, rigid, and flexible surfaces, both functionalized and non-functionalized with A(340 fibrils, were fabricated. These included glass substrates and poly(methyl methacrylate) electrospun fiber networks coated with gold via magnetron sputtering. The substrates were also functionalized through physical adsorption with poly-L-lysine and collagen, known to support cell proliferation, as well as with the inverse-A(340 peptide and an Amyloid Protein Non-A(3 Component, and the results were compared. The scaffolds were characterized using scanning electron microscopy, X-ray diffraction, atomic force microscopy, contact angle and electrical measurements, while their biological interactions were assessed using MTS assays, fluorescence imaging, and scanning electron microscopy. Fibroblast L929 and neuroblastoma SH-SY5Y cell lines were used as models, with results indicating an elevated cell viability, comparable to the control. The developed nanostructured surfaces are highly promising for integration into advanced neuromorphic engineering devices, as they have proven capable of maintaining their structural integrity when exposed to proteases.

In this work, the effects of 60Co y -ray irradiation on high resistivity p -type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and 2 MGy. Both macroscopic (I-V, C-V) and microscopic investigations, by means of Thermally Stimulated Current (TSC) and Deep Level Transient Spectroscopy (DLTS) techniques, were conducted to characterize the radiation -induced changes. The investigated diodes were manufactured on high resistivity p -type Float Zone (FZ) silicon and were further classified into two types based on the isolation technique between the pad and guard ring: p -stop and p -spray. After irradiation, the macroscopic results of current-voltage and capacitance-voltage measurements were obtained and compared with existing literature data. Additionally, the microscopic measurements focused on the development of the concentration of different radiation -induced defects, including the Boron interstitial -Oxygen interstitial (BiOi) complex, the Carbon interstitial -Oxygen interstitial (CiOi) defect, the H40K, and the so-called I*P. To investigate the thermal stability of induced defects in the bulk, isochronal annealing studies were performed in the temperature range of 100 degrees C to 300 degrees C. These annealing processes were carried out on diodes irradiated with doses of 1 and 2 MGy. Furthermore, in order to investigate the unexpected results observed in the C-V measurements after irradiation with high dose values, the surface conductance between the pad and guard ring was measured as a function of both dose and annealing temperature.

The acceptor removal process is the most detrimental effect encountered in irradiated boron-doped silicon. This process is caused by a radiation-induced boron-containing donor (BCD) defect with bistable properties that are reflected in the electrical measurements performed in usual ambient laboratory conditions. In this work, the electronic properties of the BCD defect in its two different configurations (A and B) and the kinetics behind transformations are determined from the variations in the capacitance-voltage characteristics in the 243-308 K temperature range. The changes in the depletion voltage are consistent with the variations in the BCD defect concentration in the A configuration, as measured with the thermally stimulated current technique. The A & RARR;B transformation takes place in non-equilibrium conditions when free carriers in excess are injected into the device. B & RARR;A reverse transformation occurs when the non-equilibrium free carriers are removed. Energy barriers of 0.36 eV and 0.94 eV are determined for the A & RARR;B and B & RARR;A configurational transformations, respectively. The determined transformation rates indicate that the defect conversions are accompanied by electron capture for the A & RARR;B conversion and by electron emission for the B & RARR;A transformation. A configuration coordinate diagram of the BCD defect transformations is proposed.

Vanadate glasses exhibit semiconducting property at certain temperatures. This work demonstrates the conductivity of the composition 45V(2)O(5)-25B(2)O(3)-30P(2)O(5), which is a new glass in the vanadium-boron-phosphorus ternary system that expands the glass forming area reported in literature data. The glass was obtained through a classical melt-quenching technique. The structural composition of the obtained glass was revealed with Raman spectroscopy and the amorphous characteristic has been highlighted with X-ray diffraction. The characteristic temperatures and the thermal expansion coefficient were determined by dilatometry. Based on the experimental measurements of electrical resistance, mathematical calculations were performed, resulting in a conductivity of 2.04.10(-6) S/cm at 125 degrees C, and an activation energy of 42.91 kJ/mol for this glass. Impedance spectroscopy in DC and AC at 100 V and 100 Hz to 2 MHz, respectively, showed a lower activation energy of about 0.166 eV and transition temperatures of 24 degrees C and 11 degrees C, respectively. These results were compared with those from the literature considering the temperatures at which the reported conductivities were measured. This glass has potential applications in electronic devices and temperature sensors.

Embedding electronic and optoelectronic devices in common, daily use objects is a fast developing field of research. New architectures are needed for migrating from the classic wafer- based substrates. Novel types of flexible PMMA/Au/Alq(3)/LiF/Al structures were obtained starting from electrospun polymer fibers. Thus, using an electrospinning process poly (methyl metacrylate) (PMMA) nanofibers were fabricated. A thin Au layer deposition rendered the fiber array conductive, this being further employed as the anode. The next steps consisted of the thermal evaporation of tris(8-hydroxyquinolinato) aluminum (Alq(3)) and aluminum deposition as the cathode. The Au covered PMMA nanofiber layer had a similar behavior with an indium tin oxide film i.e. low sheet resistance 10.6 omega/sq and high transparency. The low electrode resistivities allow an electron drift mobility of about 10(-6) cm(2) V-1 s(-1) at a low applied field, similar to the counterpart structures based on thin films. Concerning the relaxation processes in these structures, the Cole-Cole plots exhibit a slightly deformed semicircle, indicating a more complex equivalent circuit for the processes between metal electrodes and the active layer. This equivalent circuit includes reactance equivalent processes at the anode, cathode, in the active layer and most probably originates from the roughness of the metallic electrodes.

In this work, the thermally stimulated current (TSC) technique has been used to investigate the properties of the radiation-induced interstitial boron and interstitial oxygen defect complex by 23-GeV (E-kin) protons, including activation energy, defect concentration, as well as the annealing behavior. At first isothermal annealing (at 80 degrees C for 0-180 min) followed by isochronal annealing (for 15 min between 100 degrees C and 190 degrees C in steps of 10 degrees C), studies had been performed in order to get information about the thermal stability of the interstitial boron and interstitial oxygen defect in 50-Omega cm material after irradiation with 23-GeV protons to a fluence of 6.91 x 10(13) p/cm(2). The results are presented and discussed. Furthermore, the extracted data from TSC measurements are compared with the macroscopic properties derived from current-voltage and capacitance-voltage characteristics. In addition, the introduction rate of interstitial boron and interstitial oxygen defect as a function of the initial doping concentration was determined by exposing diodes with different resistivities (10, 50, 250, and 2 k Omega cm) to 23-GeV protons. These results are compared with data from TSC and deep-level transient spectroscopy measurements achieved by the team of the CERN-RD50 "Acceptor removal project."

Phosphate tellurite glasses, with a nominal composition of 40%ZnO+40%P2O5+20%TeO2, have been synthesized by melt quenching procedure. P2O5 can lead to chemically stable phosphate tellurite glasses, compared with those classical synthesized with H3PO4. Magneto-optical measurements have shown a derivative A(1) term centered at 532 nm originating from a transition to a degenerated excited state associated with tellurium colloids. The glass densities, measured by the Archimedes method at room temperature, display an increasing value with the melting temperature of the samples. The electrical conductivity shifts toward lower frequencies with the increased melting temperature, being influenced by the mobile charges, which require lower thermal activation energy due to the Te-o metallic particles. Together with dielectric constant, the electrical conductivity underlines structural changes, by increasing the melting temperature, associated with the presence of Te-o nanoclusters.

The dependencies of the BiOi defect concentration on doping, irradiation fluence and particle type in p-type silicon diodes have been investigated. We evidenced that large data scattering occurs for fluences above 10(12) 1 MeV neutrons/cm(2), becoming significant larger for higher fluences. We show that the BiOi defect is metastable, with two configurations A and B, of which only A is detected by Deep Level Transient Spectroscopy and Thermally Stimulated Currents techniques. The defect' electrical activity is influenced by the inherent variations in ambient and procedural experimental conditions, resulting not only in a large scattering of the results coming from the same type of measurement but making correlation between different types of experiments difficult. It is evidenced that the variations in [BiOiA] are triggered by subjecting the samples to an excess of carriers, by either heating or an inherent short exposure to ambient light when manipulating the samples prior to experiments. For the samples investigated in this work both, the [BiOiA] as determined from electrical spectroscopic measurements and the full depletion voltage as measured from Current-Voltage characteristics reach a steady state in similar to 7h. Any electrical measurement performed before will give a different result. The bi-stable behavior of the BiOi defect fully accounts for these variations.

Tellurium metallic colloids were evidence in the phosphate tellurite glasses obtained by the melt quenching method over 1000 degrees C. The concentration and subsequent color of these glasses strongly depend on the preparation conditions due to the significant differences among the melting point of the component oxides. The presence of Te metallic colloids was evidenced by the magneto-optical measurements at different temperatures, by the shift of the emissions spectra with the excitation wavelength and the thermoluminescence spectra as a result of recombination between the hole centers, created during x-ray irradiation, with the quasi coupled electrons from the surface of the metallic colloids. The peak position in the absorption spectra of these metallic colloids was modeled based on generalized Mie light scattering theory on these metallic structures, taking into account the size and shape of colloids but also the dielectric constant of the phosphate tellurite glasses in which these colloids are embedded.

ZnO-CuxO core-shell radial heterojunction nanowire arrays were fabricated by a straightforward approach which combine two simple, cost effective and large-scale preparation methods: (i) thermal oxidation in air of a zinc foil for obtaining ZnO nanowire arrays and (ii) radio frequency magnetron sputtering for covering the surface of the ZnO nanowires with a CuxO thin film. The structural, compositional, morphological and optical properties of the high aspect ratio ZnO-CuxO core-shell nanowire arrays were investigated. Individual ZnO-CuxO core-shell nanowires were contacted with Pt electrodes by means of electron beam lithography technique, diode behaviour being demonstrated. Further it was found that these n-p radial heterojunction diodes based on single ZnO-CuxO nanowires exhibit a change in the current under UV light illumination and therefore behaving as photodetectors.