Education
1981 - Doctor in Physics at Institute of Atomic Physics, Bucharest-Magurele
Positions
2001 – present: Senior Researcher I in NIMP
2008 – present: PhD adviser, Doctoral School of Physics, University of Bucharest
2022 – 2024: Full Member (Physical Sciences), Academy of Romanian Scientists
2014 – 2022: Corresponding Member (Physical Sciences), Academy of Romanian Scientists
Awards
- Prize Constantin Miculescu of Romanian Academy, 1998
- Success Story in 2018 for M-Era.Net Project "High photoconductive oxide films functionalized with GeSi nanoparticles for environmental applications" (https://m-era.net/success-stories/high-photoconductive-oxide-films-functionalized-with-gesi-nanoparticles-for-environmental-applications-photonanop; https://m-era.net/news/success-stories-booklet-2-has-been-published)
- Gold Medal and Diploma of Excellence (“Medalia de Aur si Diploma de Excelenta”) for “VIS-SWIR photosensitive nanocrystalline SiGeSn thin film and fabrication method” (“Film subtire nanocristalin fotosensibil SiGeSn in domeniul spectral VIS-SWIR si metoda de fabricatie”) awarded to M.L. Ciurea, I. Stavarache, A.M. Lepadatu, S. Lazanu, T. Stoica at ProInvent (International Exhibition of Research, Innovations and Inventions), XXIst edition, Cluj-Napoca 2023
- Gold Medal („Medalia de Aur”) “VIS-SWIR photosensitive nanocrystalline SiGeSn thin film and fabrication method RO134049-B1” (“Film de SiGeSn nanocristalin fotosensibil in VIS-SWIR si procedeu de realizare a acestuia RO134049-B1”) awarded to M.L. Ciurea, I. Stavarache, A.M. Lepadatu, S. Lazanu, T. Stoica at InventCor (International Exhibition INVENTCOR), 4th ed., Deva 2023
- Silver Medal and Diploma of Excellence (“Medalia de Argint si Diploma de Excelenta”) for “VIS-SWIR photosensitive nanocrystalline SiGeSn thin film and fabrication method” (“Film de SiGeSn nanocristalin fotosensibil in VIS-SWIR si procedeu de realizare a acestuia”) awarded to M.L. Ciurea, I. Stavarache, A.M. Lepadatu, S. Lazanu, T. Stoica at EuroInvent (European Exhibition of Creativity and Innovation), 15th ed., Iasi 2023
- Gold Medal („Medalia de Aur”) for “Structure based on GeSi nanocrystals embedded in TiO2 for VIS-NIR photodetectors and fabrication method” awarded to M.L. Ciurea, A. Slav, C. Palade, S. Lazanu, A.M. Lepadatu, T. Stoica at EuroInvent, 14th ed., Iasi 2022
- Silver Medal and Diploma of Excellence (“Medalia de Argint si Diploma de Excelenta”) for “Structure based on GeSi nanocrystals embedded in TiO2 for VIS-NIR photodetectors and fabrication method” (“Structura pe baza de nanocristale de GeSi in TiO2 pentru fotodetectori in VIS-NIR si procedeu de realizare a acesteia”) awarded to M.L. Ciurea, A. Slav, C. Palade, S. Lazanu, A.M. Lepadatu, T. Stoica at ProInvent, XIXth ed., Cluj-Napoca 2021
- ProInvent Medal and Diploma of Excellence (“Medalia ProInvent si Diploma de Excelenta”) for “Capacitive matrix for non-volatile memory based on germanium nanocrystals immersed in hafnium dioxide and process for making it” (“Matrice capacitiva pentru memorie nevolatila bazata pe nanocristale de germanium imersate in dioxid de hafniu si procedeu de realizare a acesteia”) awarded to A. Slav, C. Palade, A.-M. Lepadatu, S. Lazanu, M.L. Ciurea, D. Vasilache and M. Dragoman at ProInvent, XVIIth edition, Cluj-Napoca 2019
- Diploma of Excellence (Diploma de Excelenta) for “Capacitive matrix for non-volatile memory based on germanium nanocrystals embedded in hafnium dioxide and process for making it” awarded to A. Slav, C. Palade, A.-M. Lepadatu, S. Lazanu, M.L. Ciurea, D. Vasilache and M. Dragoman at EuroInvent, 11 ed., Iasi 2019
- Gold Medal and Diploma of Excellence (“Medalia de Aur si Diploma de Excelenta”) for ”Capacitor structure based on germanium nanocrystals embedded in silicon dioxide for nonvolatile memory and fabrication method” (“Structura de capacitor pentru memorie nevolatila pe baza de nanocristale de germaniu imersate in dioxid de siliciu si procedeu de realizare a acesteia”) awarded to M.L. Ciurea, I. Stavarache and V.S. Teodorescu at ProInvent, XVth edition, Cluj-Napoca 2017
- Best Paper Awards at IEEE International Semiconductor Conference – 2022, 2021, 2018x2, 2017, 2016, 2014, 2013, 2011, 2003, 2002, 1997, 1995 editions
Research interests
Fields of interest and professional experience:
* nanostructured materials based on Si-Ge-Sn QDs/NCs in dielectrics (HfO2, ZrO2, TiO2, Al2O3, SiO2, Si3N4) with NVM & VIS-SWIR photosensitive properties
* structures based on ferroelectric HfO2, ZrO2
* quantum phenomena in nanostructures with QDs/NCs of Si-Ge-Sn in oxides
* non-volatile memories (NVMs) based on Ge and SiGe(Sn) QDs/NCs and on traps in different oxides
* NVMs based on ferroelectric HfO2
* VIS-SWIR optical sensors and detectors with SiGeSn, GeSn, SiGe and Ge QDs/NCs in dielectrics for environmental (sensors for monitoring wet and icy slippery road conditions - TRL 5 in M-ERA.NET “PhotoNanoP”), security and biomedical applications
* photovoltaic devices based on oxide films with embedded Si-Ge-Sn NCs/NPs
* nanoscale strain in nanostructures & devices
Professional experience (2003 - 1972) also in:
* nano- and microcrystalline porous Si with high efficiency photoluminescence: electrochemical preparation, characterization (electrical, photoelectrical, traps), development of applications for gas sensors and biosensors; invited (by prof. Canham, “father” of porous Si) chapter in Handbook of Porous Silicon, Springer 2018
* military SWIR filters based on vanadium oxide glasses - Head of microproduction (10 years operating time)
* military SWIR photodetectors based on narrow gap semiconductors: materials and devices characterization
* high resistivity amorphous and crystalline semiconductors (preparation of bulk materials and films, investigation of structural, electrical and photoelectrical properties, defects correlated with morphology and structure)
* discrete MOS devices and integrated circuits (fabrication and characterization)
Expertize
Si-Ge-Sn nanostructures; ferroelectric HfO2, ZrO2; nanoscale ferroelectricity induced by stress; group IV quantum dots embedded in dielectrics; high-k oxide matrices and gate oxides; magnetron sputtering; nanostructuring (furnace & rapid thermal annealing, in situ dynamic annealing during deposition); electrical, charge storage, photoelectrical and ferroelectric characterization; group IV photonics; VIS-SWIR photodetectors and optical sensors; nonvolatile (photonic) memory devices; nanoscale phenomena; size effects; nanoscale strain in nanostructures and devices
Books
- “School – University – Industry” Cooperation” (pp. 995-1001), D. Ursutiu, C. Samoila, P. Kane, M. Ciurea, M. Stremtan, C. Ravariu in Internet of Things, Infrastructures and Mobile Applications. IMCL 2019. Advances in Intelligent Systems and Computing, Proceedings of the 13th IMCL Conference, vol. 1192, edited by M.E. Auer, T. Tsiatsos, Springer, Cham (2021)
- Invited Chapter “Electrical Characterization Techniques for Porous Silicon” (pp. 655-672, vol. 1), M.L. Ciurea, A.M. Lepadatu in Handbook of Porous Silicon, 2nd edition, edited by L. Canham, Springer International Publishing AG, Cham (2018)
- Chapter 3 “GeSiO Based Nanostructures: Electrical Behaviour Related to Morphology and Preparation Method” (pp. 47-73), M.L. Ciurea, V.S. Teodorescu, I. Stavarache, A.M. Lepadatu in Size Effects in Nanostructures, Basics and Applications, Springer Ser. Materials, Vol. 205, Eds. V. Kuncser and L. Miu, Springer-Verlag Berlin Heidelberg (2014)
- Chapter 3 “Quantum Well Solar Cells- Physics, Materials and Technology” (pp. 33-47), M.L. Ciurea, A.M. Lepadatu, I. Stavarache in Advanced Solar Cell Materials, Technology, Modeling and Simulation, Eds. L. Fara and M. Yamaguchi, IGI Global, Hershey PA (2013)
- “Ge nanodots embedded in a silica matrix” (pp. 193-212), I. Stavarache, A.M. Lepadatu, M.L. Ciurea in Nanomaterials and Nanostructures for Various Applications, Series in Micro and Nanoengineering, Vol. 19, Eds. G. Brezeanu, H. Iovu, C. Cobianu and D. Dascalu, The Publishing House of the Romanian Academy, Bucharest (2012)
- “Quantum confinement in nanometric structures” (pp. 57-67), M.L Ciurea, V. Iancu in New Trends in Nanotechnology and Fractional Calculus Applications, Eds. D. Baleanu, Z.B. Güvenç and J.A. Tenreiro Machado, Springer, Dordrecht Heidelberg London New York (2010)
- “Modelling internal quantum efficiency for quantum dots in photovoltaic cells” (pp. 11-22), V. Iancu, M.R. Mitroi, A.-M. Lepadatu, I. Stavarache, M.L. Ciurea in Nanostructuring and Nanocharacterization, Series in Micro and Nanoengineering, Vol. 16, Eds. M. Zaharescu, M. Ciurea, I. Kleps and D. Dascalu, The Publishing House of the Romanian Academy, Bucharest (2010)
- Chapter 8 “Trapping phenomena in nanocrystalline semiconductors” (pp. 191-222), M.L. Ciurea in Nanoelectronics and Photonics (Nanostructure Science and Technology Series), Eds. F. Rosei and A. Korkin, Springer, New York (2008)
- “Surface contribution to the trapping phenomena in nanocrystalline silicon structures” (pp. 89-110), M.L. Ciurea, M. Draghici, L. Jdira, V. Iancu, M.R. Mitroi, I. Kleps, A. Angelescu, M. Miu, M. Simion, in Advances in Micro- and Nanoengineering, Series in Micro and Nanoengineering, Vol. 6, Eds. Eds. I. Kleps, D. Dascalu and J. Kenny, The Publishing House of the Romanian Academy, Bucharest (2004)
Patents
- OSIM patent no. RO134049-B1 (Publ. date July 29, 2022), “VIS-SWIR photosensitive nanocrystalline SiGeSn thin film and fabrication method” (“Strat subtire de SiGeSn nanocristalin fotosensibil in spectrul VIS-SWIR si procedeu de realizare a acestuia”), M.L. Ciurea, I. Stavarache, A.M. Lepadatu, S. Lazanu, T. Stoica
- OSIM patent no. RO131968-B1 (Publ. date May 30, 2018), “Capacitive matrix for non-volatile memory based on germanium nanocrystals immersed in hafnium dioxide and fabrication method” (“Matrice capacitiva pentru memorie nevolatila si procedeu de realizare a acesteia”), A. Slav, C. Palade, A.-M. Lepadatu, S. Lazanu, L.M. Ciurea, D. Vasilache, M. Dragoman
- OSIM patent no. RO131074-B1 (Publ. date Apr 27, 2018), “Capacitor structure for non-volatile memory based on germanium nanocrystals embedded in silicon dioxide” (“Structura de capacitor pentru memorie nevolatila pe baza de nanocristale de germaniu imersate in dioxid de siliciu”), L.M. Ciurea, I. Stavarache, V.S. Teodorescu
- OSIM patent no. 75432 (1980), “Filters for (2 – 6)×10-6 m interval and fabrication method” (“Filtre in domeniul (2-6)×10-6 m si procedeu de obtinere a acestora”), M.L. Ciurea, I. Belciu, T. Botila, T. Munteanu
- OSIM patent application no. RO137426-A0 (Publ. Apr 28, 2023), “Fabrication method for nonvolatile memory structure based on ferroelectric ZrHfO2” (“Procedeu de obtinere a unei structuri de memorie nevolatila pe baza de ZrHfO2 feroelectric”), C. Palade, I. Stavarache, A. Slav, A.M. Lepadatu, T. Stoica, M.L. Ciurea
- OSIM patent application no. RO136041-A2 (Publ. Oct 28, 2022), “Nanostructured GeSi-HfO2 film, photosensitive in 1200…1600 nm wavelength domain” (“Film de GeSi-HfO2 nanostructurat fotosensibil in domeniul fereastra de lungimi de unda 1200…1600 nm”), C. Palade, I. Stavarache, A. Slav, A.M. Lepadatu, I. Dascalescu, T. Stoica, M.L. Ciurea
- OSIM patent application no. RO135683-A2 (Publ. Apr 29, 2022), “Broad band photodetector based on germanium nanoparticles embedded in silicon nitride” (“Fotodetector de banda larga pe baza de nanoparticule de germaniu inglobate in nitrura de siliciu”), I. Stavarache, M.L. Ciurea
- OSIM patent application no. RO133300-A0 (Publ. Apr 30, 2019), “SWIR photosensitive structure based on nanocrystals of germanium tin alloy and fabrication method” (“Structura fotosensibila in domeniul SWIR pe baza de nanocristale de germaniu aliat cu staniu, si procedeu de realizare a acesteia”), T. Stoica, M. Braic, A. Slav, A.E. Kiss, C. Palade, S. Lazanu, A.M. Lepadatu, M.L. Ciurea
- OSIM patent application no. RO133299-A0 (Publ. Apr 30, 2019), “Structure based on GeSi nanocrystals in TiO2 for VIS-NIR photodetectors and fabrication method” (“Structura pe baza de nanocristale de GeSi in TiO2 pentru fotodetectori in VIS-NIR si procedeu de realizare a acesteia”), M.L. Ciurea, A. Slav, C. Palade, S. Lazanu, A.M. Lepadatu, T. Stoica
- OSIM patent application no. RO132946-A0 (Publ. Nov 29, 2018), “MOS capacitor – like dosimeter with germanium nanocrystals floating gate and fabrication method” (“Structura de dozimetru pe baza de capacitor MOS cu poarta flotanta din nanocristale de germaniu, si procedeu de realizare a acesteia”), S. Lazanu, C. Palade, A.M. Lepadatu, I. Stavarache, M.L. Ciurea
- OSIM patent application no. RO132066-A0 (Publ. Jul 28, 2017), “Photosensitive structure based on germanium nanocrystals in silicon dioxide for photodetectors and fabrication method” (“Structura fotosensibila, pe baza de nanocristale de germaniu imersate in dioxid de siliciu, pentru fotodetectori, si procedeu de realizare a acestora”), I. Stavarache, L.M. Ciurea, V. Maraloiu, V.S. Teodorescu
Resume
Magdalena L. Ciurea is Senior Researcher at National Institute of Materials Physics and conducts research activities of Nanomaterials and Nanostructures based on SiGeSn Group. She is also PhD Adviser at Doctoral School of Physics, University of Bucharest and Full Member of Academy of Romanian Scientists. She obtained her PhD in Physics at Institute of Atomic Physics, Bucharest-Magurele in 1981, under the mentorship of Academician Radu Grigorovici. Her research interests cover (i) films and multilayers with Si-Ge-Sn based quantum dots / nanocrystals embedded in dielectrics, (ii) ferroelectric HfO2, ZrO2 based structures deposited by magnetron sputtering - enhancing ferroelectricity assisted by stress, (iii) VIS-SWIR sensors with group IV nanocrystals in dielectrics for environmental, security and roads safety, (iv) electronic and photoelectric high density (Si)Ge nanocrystals floating gate non-volatile memories and (v) nanoscale strain in nanostructures & devices.
Projects
1. Multilayered floating gate nonvolatile memory device with GeSi nanocrystals nodes in nanocrystallized high k HfO2 for high efficiency data storage (MultiGeSiNCmem)
Project Type: PCE, Start Date: 2021-01-04 End Date: 2023-12-31
2. Non-volatile memory based on ferroelectric HfO2 (FEROHAFOMEMO)
Project Type: PED, Start Date: 2020-08-03 End Date: 2022-08-02
3. Optoelectric devices based on SiGeSn nanocrystals in oxide matrix – NcSiGeSnOPELD
Project Type: PCE, Start Date: 2017-07-12 End Date: 2019-12-31
4. Dispozitive optoelectrice pe baza de nanocristale de SiGeSn in matrice oxidica – NcSiGeSnOPELD
Project Type: PCE, Start Date: 2017-07-12 End Date: 2019-12-31
5. High photoconductive oxide films functionalized with GeSi nanoparticles for environmental applications, PhotoNanoP
Project Type: M-ERA.NET, Start Date: 2016-01-05 End Date: 2018-12-29
6. Capacitor-like floating gate memory device with Ge nanocrystals: new solution based on Al2O3 – MemoGenyAl
Project Type: PED, Start Date: 2017-08-23 End Date: 2018-12-28
7. Novel nanostructured semiconductor materials based on Ge nanoparticles in different oxides for aplications in VIS-NIR photodetectors and nonvolatile memory devices – GENANOPHOTODNVM
Project Type: PCCA, Start Date: 2012-07-02 End Date: 2016-12-31
Publications
1. Annealing Effects on the Charging-Discharging Mechanism in Trilayer Al2O3/Ge/Al2O3 Memory Structures
Published: 2024 JAN 17 2024, ACS APPLIED ELECTRONIC MATERIALS, DOI: 10.1021/acsaelm.3c01454
2. Enhancing Short-Wave Infrared Photosensitivity of SiGe Nanocrystals-Based Films through Embedding Matrix-Induced Passivation, Stress, and Nanocrystallization
Published: 2024 MAR 4 2024, JOURNAL OF PHYSICAL CHEMISTRY C, DOI: 10.1021/acs.jpcc.3c06996
3. Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix
Published: FEB 12 2024, SCIENTIFIC REPORTS, 14, 3532, DOI: 10.1038/s41598-024-53845-z
4. Atomically Thin MoS2 Layers Selectively Grown on Mo Patterned Substrates for Field-Effect-Controlled Photosensors
Published: FEB 28 2024, ACS APPLIED NANO MATERIALS, 7, DOI: 10.1021/acsanm.3c05809
5. Annealing Effects on the Charging-Discharging Mechanism in Trilayer Al2O3/Ge/Al2O3 Memory Structures
Published: JAN 17 2024, ACS APPLIED ELECTRONIC MATERIALS, 6, DOI: 10.1021/acsaelm.3c01454
6. Enhancing Short-Wave Infrared Photosensitivity of SiGe Nanocrystals-Based Films through Embedding Matrix-Induced Passivation, Stress, and Nanocrystallization
Published: MAR 4 2024, JOURNAL OF PHYSICAL CHEMISTRY C, 128, DOI: 10.1021/acs.jpcc.3c06996
7. Optimizing SiGe-SiO2 Visible-Short-Wave Infrared Photoresponse by Modulating Interplay Between Strain and Defects Through Annealing
Published: 2024 JUN 19 2024, ADVANCED PHOTONICS RESEARCH, DOI: 10.1002/adpr.202300316
8. Memory Properties of Zr-Doped ZrO2 MOS-like Capacitor
Published: SEP 2022, COATINGS, 12, 1369, DOI: 10.3390/coatings12091369
9. SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors
Published: MAR 2022, COATINGS, 12, 348, DOI: 10.3390/coatings12030348
10. Graphene/Ferroelectric (Ge-Doped HfO2) Adaptable Transistors Acting as Reconfigurable Logic Gates
Published: JAN 2022, NANOMATERIALS, 12, 279, DOI: 10.3390/nano12020279
11. Bandgap atomistic calculations on hydrogen-passivated GeSi nanocrystals
Published: JUN 30 2021, SCIENTIFIC REPORTS, 11, DOI: 10.1038/s41598-021-92936-z
12. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Published: SEP 28 2021, JOURNAL OF MATERIALS CHEMISTRY C, 9, 12366, DOI: 10.1039/d1tc02921e
13. Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories
Published: MAR 15 2021, APPLIED SURFACE SCIENCE, 542, DOI: 10.1016/j.apsusc.2020.148702
14. Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared
Published: NOV 2021, MATERIALS, 14, DOI: 10.3390/ma14227040
15. GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics
Published: DEC 16 2020, ACS APPLIED MATERIALS & INTERFACES, 12, 56171, DOI: 10.1021/acsami.0c15887
16. GeSi Nanocrystals Photo-Sensors for Optical Detection of Slippery Road Conditions Combining Two Classification Algorithms
Published: NOV 2020, SENSORS, 20, DOI: 10.3390/s20216395
17. Obtaining SiGe nanocrystallites between crystalline TiO2 layers by HiPIMS without annealing
Published: MAY 1 2020, APPLIED SURFACE SCIENCE, 511, DOI: 10.1016/j.apsusc.2020.145552
18. Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection
Published: JUL 29 2020, ACS APPLIED MATERIALS & INTERFACES, 12, 33886, DOI: 10.1021/acsami.0c06212
19. Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe-TiO2 Films and Multilayers
Published: NOV 12 2020, JOURNAL OF PHYSICAL CHEMISTRY C, 124, 25053, DOI: 10.1021/acs.jpcc.0c06290
20. SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared
Published: FEB 24 2020, SCIENTIFIC REPORTS, 10, DOI: 10.1038/s41598-020-60000-x
21. Wafer-scale graphene-ferroelectric HfO2/Ge-HfO2/HfO(2)transistors acting as three-terminal memristors
Published: DEC 4 2020, NANOTECHNOLOGY, 31, DOI: 10.1088/1361-6528/abb2bf
22. SWIR photoresponse of SiGe/TiO2 multilayers with Ge-rich SiGe nanocrystals
Published: 2020, CAS 2020 PROCEEDINGS: 2020 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 238, DOI:
23. Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO2 matrix
Published: SEP 6 2019, NANOTECHNOLOGY, 30, DOI: 10.1088/1361-6528/ab260e
24. GeSn Nanocrystals in GeSnSiO2 by Magnetron Sputtering for Short-Wave Infrared Detection
Published: JUN 2019, ACS APPLIED NANO MATERIALS, 2, +, DOI: 10.1021/acsanm.9b00571
25. High performance NIR photosensitive films of Ge nanoparticles in Si3N4
Published: 2019, 2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, 228, DOI:
26. Controlling SWIR photosensitivity limit by composition engineering: from Ge to GeSi nanocrystals embedded in TiO2
Published: 2019, 2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, 40, DOI:
27. Fabrication and characterization of Si1-xGex nanocrystals in as-grown and annealed structures: a comparative study
Published: SEP 17 2019, BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 10, 1882, DOI: 10.3762/bjnano.10.182
28. Ge nanoparticles in SiO2 for near infrared photodetectors with high performance
Published: JUL 16 2019, SCIENTIFIC REPORTS, 9, DOI: 10.1038/s41598-019-46711-w
29. Enhanced photoconductivity of embedded SiGe nanoparticles by hydrogenation
Published: JUN 15 2019, APPLIED SURFACE SCIENCE, 479, 409, DOI: 10.1016/j.apsusc.2019.02.096
30. Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation
Published: NOV 1 2019, NANOTECHNOLOGY, 30, DOI: 10.1088/1361-6528/ab352b
31. Enhanced photoconductivity of SiGe nanocrystals in SiO2 driven by mild annealing
Published: MAR 1 2019, APPLIED SURFACE SCIENCE, 469, 878, DOI: 10.1016/j.apsusc.2018.11.061
32. Enhanced photoconductivity of SiGe-trilayer stack by retrenching annealing conditions
Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 64, DOI:
33. Enhanced photocurrent in GeSi NCs/TiO2 multilayers
Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 76, DOI:
34. Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect
Published: MAR 20 2018, SCIENTIFIC REPORTS, 8, DOI: 10.1038/s41598-018-23316-3
35. Enhanced photocurrent in GeSi NCs / TiO2 multilayers
36. Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2
Published: JAN 15 2018, APPLIED SURFACE SCIENCE, 428, 702, DOI: 10.1016/j.apsusc.2017.09.038
37. GeSi nanocrystals in SiO2 matrix with extended photoresponse in near infrared
Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 256, DOI:
38. Optoelectric charging-discharging of Ge nanocrystals in floating gate memory
Published: NOV 19 2018, APPLIED PHYSICS LETTERS, 113, DOI: 10.1063/1.5039554
39. The effect of H-2/Ar plasma treatment over photoconductivity of SiGe nanoparticles sandwiched between silicon oxide matrix
Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 260, DOI:
40. MOS DOSIMETER BASED ON Ge NANOCRYSTALS IN HfO2
Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 90, DOI:
41. Influence of preparation conditions on structure and photosensing properties of GeSi/TiO2 multilayers
Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 66, DOI:
42. Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors
Published: APR 28 2017, NANOTECHNOLOGY, 28, DOI: 10.1088/1361-6528/aa66b7
43. Isotactic polypropylene-vapor grown carbon nanofibers composites: Electrical properties
Published: OCT 10 2017, JOURNAL OF APPLIED POLYMER SCIENCE, 134, DOI: 10.1002/APP.45297
44. Light illumination effects on floating gate memory with Ge nanocrystals in HfO2
Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 90, DOI:
45. Photosensitive GeSi/TiO2 multilayers in VIS-NIR
Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 70, DOI:
46. Correlation between strain and defects in Bi implanted Si
Published: JUN 2016, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 93, 32, DOI: 10.1016/j.jpcs.2016.02.005
47. Non-volatile memory devices based on Ge nanocrystals
Published: FEB 2016, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 213, 259, DOI: 10.1002/pssa.201532376
48. How morphology determines the charge storage properties of Ge nanocrystals in HfO2
Published: MAR 1 2016, SCRIPTA MATERIALIA, 113, 138, DOI: 10.1016/j.scriptamat.2015.10.028
49. Non-volatile memory structures with Ge NCs-HfO2 intermediate layer
Published: 2016, 2016 39TH INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 166, DOI:
50. Fast atomic diffusion in amorphous films induced by laser pulse annealing
Published: 2016, 2016 39TH INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 158, DOI:
51. HfO2 with embedded Ge nanocrystals with memory effects
Published: 2015, 2015 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 48, DOI:
52. Nanostructuring of GeTiO amorphous films by pulsed laser irradiation
Published: APR 7 2015, BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 6, 900, DOI: 10.3762/bjnano.6.92
53. Tuning the properties of Ge and Si nanocrystals based structures by tailoring the preparation conditions Review
Published: JAN-MAR 2015, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 10, 87, DOI:
54. STRAIN DRIVEN CHANGES OF DEFECT PARAMETERS IN HEAVY ION IMPLANTED Si
Published: OCT-DEC 2015, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 10, 1381, DOI:
55. Transition in conduction mechanism in GeSi nanostructures
Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 58, DOI:
56. Numerical Procedure for Optimizing Dye-Sensitized Solar Cells
Published: 2014, JOURNAL OF NANOMATERIALS, 2014, DOI: 10.1155/2014/378981
57. Annealing induced changes in the structure, optical and electrical properties of GeTiO2 nanostructured films
Published: AUG 1 2014, APPLIED SURFACE SCIENCE, 309, 174, DOI: 10.1016/j.apsusc.2014.04.212
58. GeSiO Based Nanostructures: Electrical Behaviour Related to Morphology and Preparation Method
Published: 2014, SIZE EFFECTS IN NANOSTRUCTURES: BASICS AND APPLICATIONS, 205, 73, DOI: 10.1007/978-3-662-44479-5_3
59. Electrical properties related to the structure of GeSi nanostructured films
Published: JUL 2014, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 251, 1346, DOI: 10.1002/pssb.201350112
60. Charge storage properties of HfO2/Ge-HfO2/SiO2 trilayer structures
Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 62, DOI:
61. Trapping centers in heavy ion irradiated silicon
Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 128, DOI:
62. Stress Influenced Trapping Processes in Si Based Multi-Quantum Well Structures and Heavy Ions Implanted Si
Published: 2014, INTERNATIONAL CONFERENCE OF COMPUTATIONAL METHODS IN SCIENCES AND ENGINEERING 2014 (ICCMSE 2014), 1618, 63, DOI: 10.1063/1.4897674
63. Strain-induced modification of trap parameters due to the stopped ions in Bi-irradiated Si
Published: NOV 2014, EPL, 108, DOI: 10.1209/0295-5075/108/36004
64. Effect of Bismuth Irradiation on Crystalline Silicon
Published: 2013, 2013 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1-2, 76, DOI:
65. TRANSMISSION ELECTRON MICROSCOPY STUDY OF Ge NANOPARTICLES FORMED IN GeSiO FILMS BY ANNEALING IN HYDROGEN
Published: OCT-DEC 2013, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 8, 1780, DOI:
66. Quantum Well Solar Cells: Physics, Materials and Technology
Published: 2013, ADVANCED SOLAR CELL MATERIALS, TECHNOLOGY, MODELING, AND SIMULATION, 47, DOI: 10.4018/978-1-4666-1927-2.ch003
67. EFFECT OF STRESS ON TRAPPING PHENOMENA IN SILICON: FROM SINGLE CRYSTAL TO NANOSTRUCTURES
68. Conduction mechanism versus annealing in SiO2 films with Ge nanoparticles
Published: 2013, 2013 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1-2, 34, DOI:
69. Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2
Published: NOV 15 2013, APPLIED SURFACE SCIENCE, 285, 179, DOI: 10.1016/j.apsusc.2013.08.031
70. Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion-crystallization process
Published: SEP 15 2013, JOURNAL OF NANOPARTICLE RESEARCH, 15, DOI: 10.1007/s11051-013-1981-y
71. Analysis of defect formation in semiconductor cryogenic bolometric detectors created by heavy dark matter
Published: APR 2013, ASTROPARTICLE PHYSICS, 44, 14, DOI: 10.1016/j.astropartphys.2013.01.005
72. Structure and electrical transport in films of Ge nanoparticles embedded in SiO2 matrix
Published: JUL 2012, JOURNAL OF NANOPARTICLE RESEARCH, 14, DOI: 10.1007/s11051-012-0930-5
73. IODINE IRRADIATION INDUCED DEFECTS IN CRYSTALLINE SILICON
Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 276, DOI:
74. TRANSPORT MECHANISMS IN SiO2 FILMS WITH EMBEDDED GERMANIUM NANOPARTICLES
Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 94, DOI:
75. Effects produced by iodine irradiation on high resistivity silicon
Published: DEC 10 2012, APPLIED PHYSICS LETTERS, 101, DOI: 10.1063/1.4772015
76. ELECTRICAL BEHAVIOUR RELATED TO STRUCTURE OF NANOSTRUCTURED GeSi FILMS ANNEALED AT 700 degrees C
Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 112, DOI:
77. Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix
Published: JAN 2011, JOURNAL OF NANOPARTICLE RESEARCH, 13, 232, DOI: 10.1007/s11051-010-0021-4
78. PREPARATION AND ELECTRICAL CHARACTERIZATION OF SiGe NANOSTRUCTURES
Published: 2011, 2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2, 52, DOI:
79. TRAPPING ASPECTS IN SILICON-BASED NANOSTRUCTURES
Published: OCT-DEC 2011, PROCEEDINGS OF THE ROMANIAN ACADEMY SERIES A-MATHEMATICS PHYSICS TECHNICAL SCIENCES INFORMATION SCIENCE, 12, 323, DOI:
80. Numerical analysis of J-V characteristics of a polymer solar cell
Published: MAY 2011, PROGRESS IN PHOTOVOLTAICS, 19, 306, DOI: 10.1002/pip.1026
81. Stress-induced traps in multilayered structures
Published: JAN 1 2011, JOURNAL OF APPLIED PHYSICS, 109, DOI: 10.1063/1.3525582
82. Calculation of the quantum efficiency for the absorption on confinement levels in quantum dots
Published: APR 2011, JOURNAL OF NANOPARTICLE RESEARCH, 13, 1612, DOI: 10.1007/s11051-010-9913-6
83. STUDY OF Ge NANOPARTICLES EMBEDDED IN AN AMORPHOUS SiO2 MATRIX WITH PHOTOCONDUCTIVE PROPERTIES
Published: JAN-MAR 2011, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 6, 73, DOI:
84. PREPARATION INDUCED ELECTRICAL BEHAVIOUR OF GeSiO NANOSTRUCTURES
Published: 2011, 2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2, 34, DOI:
85. Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride
Published: 2011, NANOSCALE RESEARCH LETTERS, 6, DOI: 10.1186/1556-276X-6-88
86. TEMPERATURE DEPENDENCE OF CAPTURE COEFFICIENTS IN TRAPPING PHENOMENA
Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 374, DOI:
87. Quantum Confinement in Nanometric Structures
Published: 2010, NEW TRENDS IN NANOTECHNOLOGY AND FRACTIONAL CALCULUS APPLICATIONS, +, DOI: 10.1007/978-90-481-3293-5_5
88. The influence of shape and potential barrier on confinement energy levels in quantum dots
Published: FEB 2010, JOURNAL OF APPLIED PHYSICS, 107, DOI: 10.1063/1.3284083
89. INFLUENCE OF PREPARATION METHOD ON STRUCTURAL PROPERTIES OF GeSiO NANOSYSTEMS
Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 80, DOI: 10.1109/SMICND.2010.5650255
90. INVESTIGATION OF ELECTRICAL PROPERTIES OF CARBON NANOTUBES
Published: 2009, CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, +, DOI: 10.1109/SMICND.2009.5336593
91. Point and extended defects in irradiated silicon and consequences for detectors
Published: 2009, PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 8, 6, +, DOI: 10.1002/pssc.200881434
92. Semiconductor detectors for high radiation fields: microscopic processes in materials and the control of device parameters
Published: DEC 2009, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 11, 2154, DOI:
93. Morphology of Si nanocrystallites embedded in SiO2 matrix
Published: NOV 2008, JOURNAL OF MATERIALS RESEARCH, 23, 2995, DOI: 10.1557/JMR.2008.0358
94. Polypyrrole - porous silicon nanocomposites
Published: SEP 2008, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 10, 2324, DOI:
95. MODELING OF TRAP DISCHARGING PROCESSES IN MULTIPLE QUANTUM WELL STRUCTURES
Published: 2008, CAS: 2008 INTERNATIONAL SEMICONDUCTOR CONFERENCE, PROCEEDINGS, +, DOI: 10.1109/SMICND.2008.4703332
96. Defects in silicon: From bulk crystals to nanostructures
97. Some contributions to the understanding of the puzzle of physical processes of degradation in irradiated silicon
Published: 2007, CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, +, DOI:
98. Why the energy levels observed in electrical transport, phototransport and photoluminescence are different?
Published: 2007, CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, +, DOI: 10.1109/SMICND.2007.4519643
99. Quantum confinement model for phototransport processes in nanocrystalline porous silicon
Published: 2007, 2006 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, +, DOI:
100. Trapping phenomena in silicon-based nanocrystalline semiconductors
Published: OCT 2007, SOLID-STATE ELECTRONICS, 51, 1337, DOI: 10.1016/j.sse.2007.07.002
101. Phototransport and photoluminescence in nanocrystalline porous silicon
Published: AUG 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, 2643, DOI:
102. Percolation phenomena in Si-SiO2 nanocomposite films
Published: AUG 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, 2647, DOI:
103. Electronic transport in Si-SiO2 nanocomposite films
Published: MAY 20 2006, CHEMICAL PHYSICS LETTERS, 423, 228, DOI: 10.1016/j.cplett.2006.03.070
104. Electrical properties of nanocrystalline silicon
Published: FEB 2006, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 8, 19, DOI:
105. Quantum confinement modeling of electrical and optical processes in nanocrystalline silicon
Published: DEC 2006, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 8, 2160, DOI:
106. Quantum confinement in nanocrystalline silicon
Published: OCT 2005, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7, 2346, DOI:
107. Quantum confinement in the photoluminescence of nanocrystalline porous silicon
Published: 2005, CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE, 1-2, 58, DOI:
108. Conduction mechanisms in silicon-based nanocomposites
Published: MAR 2004, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 6, 56, DOI:
109. Microstructure of Si/Sio(2) nanocomposite films
Published: 2004, 2004 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1AND 2, PROCEEDINGS, 62, DOI: 10.1109/SMICND.2004.1402802
110. Influence of crystal growth technology on the tolerance to radiation of silicon for detectors at future accelerators
Published: 2004, 2004 International Semiconductor Conference, Vols 1and 2, Proceedings, 422, DOI:
111. Modeling of optical charging spectroscopy investigation of trapping phenomena in nanocrystalline porous silicon
Published: JUL 1 2003, JOURNAL OF APPLIED PHYSICS, 94, 223, DOI: 10.1063/1.1576301
112. Coupled confinement effect on the photoluminescence and electrical transport in porous silicon
Published: MAY 2003, JOURNAL OF LUMINESCENCE, 102, 497, DOI: 10.1016/S2313(02)00589-6
113. Non-equilibrium electronic processes in nanocrystalline silicon
Published: 2002, ADVANCED TOPICS IN OPTOELECTRONICS, MICROELECTRONICS, AND NANOTECHNOLOGIES, 5227, 273, DOI:
114. Trapping levels in (nc-Si/CaF2)(n) multi-quantum wells
Published: AUG 20 2001, MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 15, 47, DOI: 10.1016/S0928-4931(01)00215-6
115. Traps in (nc-Si/CaF2)(50) nanostructures
Published: 2001, CAS: 2002 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 122, DOI:
116. Electrical properties of nanocrystalline porous silicon
Published: 2000, 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, 64, DOI: 10.1109/SMICND.2000.890188
117. Trapping levels in nanocrystalline porous silicon
Published: MAY 22 2000, APPLIED PHYSICS LETTERS, 76, 3069, DOI: 10.1063/1.126581
118. Oxidation-induced modifications of trap parameters in nanocrystalline porous silicon
Published: NOV 2000, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 182, 243, DOI: 10.1002/1521-396X(200011)182:1<239::AID-PSSA239>3.0.CO;2-K
119. Microstructural aspects related to carriers transport properties of nanocrystalline porous silicon films
Published: SEP 1999, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146, 3521, DOI: 10.1149/1.1392507
120. Electrical behaviour of fresh and stored porous silicon films
Published: JUL 18 1998, THIN SOLID FILMS, 325, 277, DOI: 10.1016/S0040-6090(98)00429-5
121. Quantum confinement model for electric transport phenomena in fresh and stored photoluminescent porous silicon films
Published: OCT 1998, SOLID-STATE ELECTRONICS, 42, 1896, DOI: 10.1016/S0038-1101(98)00160-9
122. Theoretical model for carriers transport in nanocrystalline porous silicon films
Published: 1998, CAS'98 PROCEEDINGS - 1998 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 21ST EDITION, VOLS 1 AND 2, 112, DOI:
123. Change of the optical properties of porous silicon by post anodization treatments
Published: 1998, CAS'98 PROCEEDINGS - 1998 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 21ST EDITION, VOLS 1 AND 2, 458, DOI:
124. On the photoluminescence decay in porous silicon films
Published: 1998, FIFTH CONFERENCE ON OPTICS (ROMOPTO '97), PTS 1 AND 2, 3405, 626, DOI: 10.1117/12.312818
125. Electrical properties of porous silicon stabilised by storage in ambient
Published: 1997, CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2, 180, DOI:
127. Visible photoluminescence in porous silicon prepared in different conditions - Temperature dependence and decay
Published: JUN 1996, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 195, 645, DOI: 10.1002/pssb.2221950230
128. INTERFACE TRAPPING STATES IN MISIM STRUCTURES, WITH ZNS-MN
Published: MAY 1 1995, THIN SOLID FILMS, 260, 57, DOI: 10.1016/0040-6090(94)06467-9
129. TRAPPING LEVELS IN BI12SIO20 CRYSTALS
Published: AUG 15 1994, JOURNAL OF APPLIED PHYSICS, 76, 2219, DOI: 10.1063/1.357637
131. LIGHT-INDUCED-CHANGES IN ELECTRICAL-PROPERTIES OF AS3SE2 THIN-FILMS
Published: 1980, JOURNAL OF NON-CRYSTALLINE SOLIDS, 35-6, 1083, DOI: 10.1016/0022-3093(80)90343-9
132. TRAPS IN POLYCRYSTALLINE CDTE THIN-FILMS
Published: 1980, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 61, 491, DOI: 10.1002/pssa.2210610220
133. SOME NONEQUILIBRIUM PHENOMENA IN SPUTTERED CDTE THIN-FILMS
Published: 1979, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 56, 347, DOI: 10.1002/pssa.2210560138
134. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Published: , JOURNAL OF MATERIALS CHEMISTRY C, DOI: 10.1039/d1tc02921e
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