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Dr. Magdalena Lidia Ciurea

Senior Researcher Rank 1

Laboratory of Atomic Structures and Defects in Advanced Materials

ciurea[AT]infim[DOT]ro
Keywords: Si-Ge-Sn nanostructures; ferroelectric HfO2, ZrO2

Education

1981 - Doctor in Physics at Institute of Atomic Physics, Bucharest-Magurele

Positions

2001 – present: Senior Researcher I in NIMP

2008 – present:  PhD adviser, Doctoral School of Physics, University of Bucharest

2014 – present:  Corresponding Member (Physical Sciences), Academy of Romanian Scientists

Awards

Prize Constantin Miculescu of Romanian Academy, 1998

Success Story in 2018 for M-Era.Net Project "High photoconductive oxide films functionalized with GeSi nanoparticles for environmental applications" (https://m-era.net/success-stories/high-photoconductive-oxide-films-functionalized-with-gesi-nanoparticles-for-environmental-applications-photonanop; https://m-era.net/news/success-stories-booklet-2-has-been-published)  

Diploma of Excellence and Silver Medal (“Diploma de Excelenta si Medalia de Argint”) for “Structure based on GeSi nanocrystals embedded in TiO2 for VIS-NIR photodetectors and fabrication method” (“Structura pe baza de nanocristale de GeSi in TiO2 pentru fotodetectori in VIS-NIR si procedeu de realizare a acesteia”) awarded to M.L. Ciurea, A. Slav, C. Palade, S. Lazanu, A.M. Lepadatu at ProInvent (International Exhibition of Research, Innovations and Inventions), XIXth ed., Cluj-Napoca 2021

Diploma of Excellence and ProInvent Medal (“Diploma de Excelenta si Medalia ProInvent”) for “Capacitive matrix for non-volatile memory based on germanium nanocrystals embedded in hafnium dioxide and process for making it” (“Matrice capacitiva pentru memorie nevolatila bazata pe nanocristale de germanium imersate in dioxid de hafniu si procedeu de realizare a acesteia”) awarded to A. Slav, C. Palade, A.-M. Lepadatu, S. Lazanu, M.L. Ciurea, D. Vasilache and M. Dragoman at ProInvent, XVIIth ed., Cluj-Napoca 2019

Diploma of Excellence (Diploma de Excelenta) for “Capacitive matrix for non-volatile memory based on germanium nanocrystals embedded in hafnium dioxide and process for making it” awarded to A. Slav, C. Palade, A.-M. Lepadatu, S. Lazanu, M.L. Ciurea, D. Vasilache and M. Dragoman at EuroInvent (European Exhibition of Creativity and Innovation), 11 ed., Iasi 2019

- Diploma of Excellence and Gold Medal (“Diploma de Excelenta si Medalia de Aur”) for ”Capacitor structure based on germanium nanocrystals embedded in silicon dioxide for nonvolatile memory and fabrication method” (“Structura de capacitor pentru memorie nevolatila pe baza de nanocristale de germaniu imersate in dioxid de siliciu si procedeu de realizare a acesteia”) awarded to M.L. Ciurea, I. Stavarache and V.S. Teodorescu at ProInvent, XVth ed., Cluj-Napoca 2017

Best Paper Awards at IEEE International Semiconductor Conference – 2021, 2018, 2017, 2016, 2014, 2013, 2011, 2003, 2002, 1997, 1995 editions

Research interests

Fields of interest and professional experience:

* nanostructured materials based on Si-Ge-Sn QDs/NCs in dielectrics (HfO2, ZrO2, TiO2, Al2O3, SiO2, Si3N4) with NVM & VIS-SWIR photosensitive properties

* structures based on ferroelectric HfO2, ZrO2

* quantum phenomena in nanostructures with QDs/NCs of Si-Ge-Sn in oxides

* C nanotubes, nanofibers in dielectric and polymeric matrices - electrical properties, percolation phenomena

* non-volatile memories (NVMs) based on Ge and SiGe(Sn) QDs/NCs and on traps in different oxides

* NVMs based on ferroelectric HfO2

* VIS-SWIR optical sensors and detectors with SiGeSn, GeSn, SiGe and Ge QDs/NCs in dielectrics for environmental (sensors for monitoring wet and icy slippery road conditions - TRL 5 in M-ERA.NET “PhotoNanoP”), security and biomedical applications

* photovoltaic devices based on oxide films with embedded Si-Ge-Sn NCs/NPs

* nanoscale strain in nanostructures & devices

 

Professional experience (2003 - 1972) also in:

* nano- and microcrystalline porous Si with high efficiency photoluminescence: electrochemical preparation, characterization (electrical, photoelectrical, traps), development of applications for gas sensors and biosensors; invited (by prof. Canham, “father” of porous Si) chapter in Handbook of Porous Silicon, Springer 2018

* military SWIR filters based on vanadium oxide glasses - Head of microproduction (10 years operating time)

* military SWIR photodetectors based on narrow gap semiconductors: materials and devices characterization

* high resistivity amorphous and crystalline semiconductors (preparation of bulk materials and films, investigation of structural, electrical and photoelectrical properties, defects correlated with morphology and structure)

* discrete MOS devices and integrated circuits (fabrication and characterization)

Expertize

Si-Ge-Sn nanostructures; ferroelectric HfO2, ZrO2; nanoscale ferroelectricity induced by stress; group IV quantum dots embedded in dielectrics; high-k oxide matrices and gate oxides; magnetron sputtering; nanostructuring (furnace  & rapid thermal annealing, in situ dynamic annealing during deposition); electrical, charge storage, photoelectrical and ferroelectric characterization; group IV photonics; VIS-SWIR photodetectors and optical sensors; nonvolatile (photonic) memory devices; nanoscale phenomena; size effects; nanoscale strain in nanostructures and devices

Books

1.       ““School – University – Industry” Cooperation” (pp. 995-1001), D. Ursutiu, C. Samoila, P. Kane, M. Ciurea, M. Stremtan, C. Ravariu in Internet of Things, Infrastructures and Mobile Applications. IMCL 2019. Advances in Intelligent Systems and ComputingProceedings of the 13th IMCL Conferencevol. 1192, edited by M.E. Auer, T. Tsiatsos, Springer, Cham (2021)

2.      Invited Chapter “Electrical Characterization Techniques for Porous Silicon” (pp. 655-672, vol. 1), M.L. Ciurea, A.M. Lepadatu in Handbook of Porous Silicon2nd edition, edited by L. Canham, Springer International Publishing AG, Cham (2018)

3.      Chapter 3 “GeSiO Based Nanostructures: Electrical Behaviour Related to Morphology and Preparation Method” (pp. 47-73), M.L. Ciurea, V.S. Teodorescu, I. Stavarache, A.M. Lepadatu in Size Effects in Nanostructures, Basics and Applications, Springer Ser. Materials, Vol. 205, Eds. V. Kuncser and L. Miu, Springer-Verlag Berlin Heidelberg (2014)

4.      Chapter 3 “Quantum Well Solar Cells- Physics, Materials and Technology” (pp. 33-47), M.L. Ciurea, A.M. Lepadatu, I. Stavarache in Advanced Solar Cell Materials, Technology, Modeling and Simulation, Eds. L. Fara and M. Yamaguchi, IGI Global, Hershey PA (2013)

5.      “Ge nanodots embedded in a silica matrix” (pp. 193-212), I. Stavarache, A.M. Lepadatu, M.L. Ciurea in Nanomaterials and Nanostructures for Various Applications, Series in Micro and Nanoengineering, Vol. 19, Eds. G. Brezeanu, H. Iovu, C. Cobianu and D. Dascalu, The Publishing House of the Romanian Academy, Bucharest (2012)

6.      “Quantum confinement in nanometric structures” (pp. 57-67), M.L Ciurea, V. Iancu in New Trends in Nanotechnology and Fractional Calculus Applications, Eds. D. Baleanu, Z.B. Güvenç and J.A. Tenreiro Machado, Springer, Dordrecht Heidelberg London New York (2010)

7.       “Modelling internal quantum efficiency for quantum dots in photovoltaic cells” (pp. 11-22), V. Iancu, M.R. Mitroi, A.-M. Lepadatu, I. Stavarache, M.L. Ciurea in Nanostructuring and Nanocharacterization, Series in Micro and Nanoengineering, Vol. 16, Eds. M. Zaharescu, M. Ciurea, I. Kleps and D. Dascalu, The Publishing House of the Romanian Academy, Bucharest (2010)

8.      Chapter 8 “Trapping phenomena in nanocrystalline semiconductors” (pp. 191-222), M.L. Ciurea in Nanoelectronics and Photonics (Nanostructure Science and Technology Series), Eds. F. Rosei and A. Korkin, Springer, New York (2008)

9.      “Surface contribution to the trapping phenomena in nanocrystalline silicon structures” (pp. 89-110), M.L. Ciurea, M. Draghici, L. Jdira, V. Iancu, M.R. Mitroi, I. Kleps, A. Angelescu, M. Miu, M. Simion, in Advances in Micro- and Nanoengineering, Series in Micro and Nanoengineering, Vol. 6, Eds. Eds. I. Kleps, D. Dascalu and J. Kenny, The Publishing House of the Romanian Academy, Bucharest (2004)

Patents

1.       OSIM patent no. RO131968-B1 (Publ. date May 30, 2018), “Matrice capacitiva pentru memorie nevolatila si procedeu de realizare a acesteia”, A. Slav, C. Palade, A.-M. Lepadatu, S. Lazanu, L.M. Ciurea, D. Vasilache, M. Dragoman

2.      OSIM patent no. RO131074-B1 (Publ. date Apr 27, 2018), “Structura de capacitor pentru memorie nevolatila pe baza de nanocristale de germaniu imersate in dioxid de siliciu”, L.M. Ciurea, I. Stavarache, V.S. Teodorescu

3.      OSIM patent no. 75432 (1980), “Filtre in domeniul (2-6)×10-6 m si procedeu de obtinere a acestora”,  M.L. Ciurea, I. Belciu, T. Botila, T. Munteanu

4.      OSIM patent application filled in 2021 (A/00193 Apr 22, 2021), “Film de GeSi-HfO2 nanostructurat fotosensibil in domeniul fereastra de lungimi de unda 1200…1600 nm”, C. Palade, I. Stavarache, A. Slav, A.M. Lepadatu, I. Dascalescu, T. Stoica, M.L. Ciurea

5.      OSIM patent application filled in 2020, “Fotodetector de banda larga pe baza de nanoparticule de germaniu inglobate in nitrura de siliciu”, M.L. Ciurea, I. Stavarache

6.      OSIM patent application no. RO134049-A0 (Publ. date Apr 30, 2020), “Film de SiGeSn nanocristalin fotosensibil in VIS-SWIR si procedeu de realizare a acestuia”, M.L. Ciurea, I. Stavarache, A.M. Lepadatu, S. Lazanu, T. Stoica

7.       OSIM patent application no. RO133300-A0 (Publ. date Apr 30, 2019), “Structura fotosensibila in domeniul SWIR pe baza de nanocristale de germaniu aliat cu staniu, si procedeu de realizare a acesteia”, T. Stoica, M. Braic, A. Slav, A.E. Kiss, C. Palade, S. Lazanu, A.M. Lepadatu, M.L. Ciurea

8.      OSIM patent application no. RO133299-A0 (Publ. date Apr 30, 2019), “Structura pe baza de nanocristale de GeSi in TiO2 pentru fotodetectori in VIS-NIR si procedeu de realizare a acesteia”, M.L. Ciurea, A. Slav, C. Palade, S. Lazanu, A.M. Lepadatu, T. Stoica

9.      OSIM patent application no. RO132946-A0 (Publ. date Nov 29, 2018), “Structura de dozimetru pe baza de capacitor MOS cu poarta flotanta din nanocristale de germaniu, si procedeu de realizare a acesteia”, S. Lazanu, C. Palade, A.M. Lepadatu, I. Stavarache, M.L. Ciurea

10.   OSIM patent application no. RO132066-A0 (Publ. date Jul 28, 2017), “Structura fotosensibila, pe baza de nanocristale de germaniu imersate in dioxid de siliciu, pentru fotodetectori, si procedeu de realizare a acestora”, I. Stavarache, L.M. Ciurea, V. Maraloiu, V.S. Teodorescu

Projects

1. Multilayered floating gate nonvolatile memory device with GeSi nanocrystals nodes in nanocrystallized high k HfO2 for high efficiency data storage (MultiGeSiNCmem)
Project Type: PCE, Start Date: 2021-01-04 End Date: 2023-12-31
2. Non-volatile memory based on ferroelectric HfO2 (FEROHAFOMEMO)
Project Type: PED, Start Date: 2020-08-03 End Date: 2022-08-02
3. Optoelectric devices based on SiGeSn nanocrystals in oxide matrix – NcSiGeSnOPELD
Project Type: PCE, Start Date: 2017-07-12 End Date: 2019-12-31
4. Dispozitive optoelectrice pe baza de nanocristale de SiGeSn in matrice oxidica – NcSiGeSnOPELD
Project Type: PCE, Start Date: 2017-07-12 End Date: 2019-12-31
5. High photoconductive oxide films functionalized with GeSi nanoparticles for environmental applications, PhotoNanoP
Project Type: M-ERA.NET, Start Date: 2016-01-05 End Date: 2018-12-29
6. Capacitor-like floating gate memory device with Ge nanocrystals: new solution based on Al2O3 – MemoGenyAl
Project Type: PED, Start Date: 2017-08-23 End Date: 2018-12-28
7. Novel nanostructured semiconductor materials based on Ge nanoparticles in different oxides for aplications in VIS-NIR photodetectors and nonvolatile memory devices – GENANOPHOTODNVM
Project Type: PCCA, Start Date: 2012-07-02 End Date: 2016-12-31

Publications

1. Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories
Authors: Stavarache, I; Cojocaru, O; Maraloiu, VA; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: MAR 15 2021, APPLIED SURFACE SCIENCE, 542, 148702, DOI: 10.1016/j.apsusc.2020.148702

2. Bandgap atomistic calculations on hydrogen-passivated GeSi nanocrystals
Authors: Cojocaru, O; Lepadatu, AM; Nemnes, GA; Stoica, T; Ciurea, ML

Published: JUN 30 2021, SCIENTIFIC REPORTS, 11, 13582, DOI: 10.1038/s41598-021-92936-z

3. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Authors: Palade, C; Lepadatu, AM; Slav, A; Cojocaru, O; Iuga, A; Maraloiu, VA; Moldovan, A; Dinescu, M; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: SEP 28 2021, JOURNAL OF MATERIALS CHEMISTRY C, 9, DOI: 10.1039/d1tc02921e

4. Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection
Authors: Dascalescu, I; Zoita, NC; Slav, A; Matei, E; Iftimie, S; Comanescu, F; Lepadatu, AM; Palade, C; Lazanu, S; Buca, D; Teodorescu, VS; Ciurea, ML; Braic, M; Stoica, T

Published: JUL 29 2020, ACS APPLIED MATERIALS & INTERFACES, 12, DOI: 10.1021/acsami.0c06212

5. SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared
Authors: Stavarache, I; Logofatu, C; Sultan, MT; Manolescu, A; Svavarsson, HG; Teodorescu, VS; Ciurea, ML

Published: FEB 24 2020, SCIENTIFIC REPORTS, 10, 3252, DOI: 10.1038/s41598-020-60000-x

6. Obtaining SiGe nanocrystallites between crystalline TiO2 layers by HiPIMS without annealing
Authors: Sultan, MT; Gudmundsson, JT; Manolescu, A; Teodorescu, VS; Ciurea, ML; Svavarsson, HG

Published: MAY 1 2020, APPLIED SURFACE SCIENCE, 511, 145552, DOI: 10.1016/j.apsusc.2020.145552

7. Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe-TiO2 Films and Multilayers
Authors: Lepadatu, AM; Palade, C; Slav, A; Cojocaru, O; Maraloiu, VA; Iftimie, S; Comanescu, F; Dinescu, A; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: NOV 12 2020, JOURNAL OF PHYSICAL CHEMISTRY C, 124, DOI: 10.1021/acs.jpcc.0c06290

8. GeSi Nanocrystals Photo-Sensors for Optical Detection of Slippery Road Conditions Combining Two Classification Algorithms
Authors: Palade, C; Stavarache, I; Stoica, T; Ciurea, ML

Published: NOV 2020, SENSORS, 20, 6395, DOI: 10.3390/s20216395

9. Wafer-scale graphene-ferroelectric HfO2/Ge-HfO2/HfO(2)transistors acting as three-terminal memristors
Authors: Dragoman, M; Dinescu, A; Dragoman, D; Palade, C; Moldovan, A; Dinescu, M; Teodorescu, VS; Ciurea, ML

Published: DEC 4 2020, NANOTECHNOLOGY, 31, 495207, DOI: 10.1088/1361-6528/abb2bf

10. Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation
Authors: Palade, C; Slav, A; Lepadatu, AM; Stavarache, I; Dascalescu, I; Maraloiu, AV; Negrila, C; Logofatu, C; Stoica, T; Teodorescu, VS; Ciurea, ML; Lazanu, S

Published: NOV 1 2019, NANOTECHNOLOGY, 30, 445501, DOI: 10.1088/1361-6528/ab352b

11. Fabrication and characterization of Si1-xGex nanocrystals in as-grown and annealed structures: a comparative study
Authors: Sultan, MT; Maraloiu, AV; Stavarache, I; Gudmundsson, JT; Manolescu, A; Teodorescu, VS; Ciurea, ML; Svavarsson, HG

Published: SEP 17 2019, BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 10, DOI: 10.3762/bjnano.10.182

12. Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO2 matrix
Authors: Sultan, MT; Gudmundsson, JT; Manolescu, A; Teodorescu, VS; Ciurea, ML; Svavarsson, HG

Published: SEP 6 2019, NANOTECHNOLOGY, 30, 365604, DOI: 10.1088/1361-6528/ab260e

13. Controlling SWIR photosensitivity limit by composition engineering: from Ge to GeSi nanocrystals embedded in TiO2
Authors: Dascalescu, I; Cojocaru, O; Lalau, I; Palade, C; Slav, A; Lepadatu, AM; Lazanu, S; Stoica, T; Ciurea, ML

Published: 2019, 2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, DOI:

14. High performance NIR photosensitive films of Ge nanoparticles in Si3N4
Authors: Stavarache, I; Prepelita, P; Lalau, I; Cojocaru, O; Teodorescu, VS; Ciurea, ML

Published: 2019, 2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, DOI:

15. Ge nanoparticles in SiO2 for near infrared photodetectors with high performance
Authors: Stavarache, I; Teodorescu, VS; Prepelita, P; Logofatu, C; Ciurea, ML

Published: JUL 16 2019, SCIENTIFIC REPORTS, 9, 10286, DOI: 10.1038/s41598-019-46711-w

16. Enhanced photoconductivity of embedded SiGe nanoparticles by hydrogenation
Authors: Sultan, MT; Gudmundsson, JT; Manolescu, A; Stoica, T; Ciurea, ML; Svavarsson, HG

Published: JUN 15 2019, APPLIED SURFACE SCIENCE, 479, DOI: 10.1016/j.apsusc.2019.02.096

17. GeSn Nanocrystals in GeSnSiO2 by Magnetron Sputtering for Short-Wave Infrared Detection
Authors: Slav, A; Palade, C; Logofatu, C; Dascalescu, I; Lepadatu, AM; Stavarache, I; Comanescu, F; Iftimie, S; Antohe, S; Lazanu, S; Teodorescu, VS; Buca, D; Ciurea, ML; Braic, M; Stoica, T

Published: JUN 2019, ACS APPLIED NANO MATERIALS, 2, DOI: 10.1021/acsanm.9b00571

18. Enhanced photoconductivity of SiGe nanocrystals in SiO2 driven by mild annealing
Authors: Sultan, MT; Manolescu, A; Gudmundsson, JT; Torfason, K; Nemnes, GA; Stavarache, I; Logofatu, C; Teodorescu, VS; Ciurea, ML; Svavarsson, HG

Published: MAR 1 2019, APPLIED SURFACE SCIENCE, 469, DOI: 10.1016/j.apsusc.2018.11.061

19. Enhanced photocurrent in GeSi NCs/TiO2 multilayers
Authors: Palade, C; Slav, A; Cojocaru, O; Teodorescu, VS; Lazanu, S; Stoica, T; Sultan, MT; Svavarsson, HG; Ciurea, ML

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, DOI:

20. Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect
Authors: Lepadatu, AM; Slav, A; Palade, C; Dascalescu, I; Enculescu, M; Iftimie, S; Lazanu, S; Teodorescul, VS; Ciurea, ML; Stoica, T

Published: MAR 20 2018, SCIENTIFIC REPORTS, 8, 4898, DOI: 10.1038/s41598-018-23316-3

21. Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2
Authors: Palade, C; Lepadatu, AM; Slav, A; Lazanu, S; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: JAN 15 2018, APPLIED SURFACE SCIENCE, 428, DOI: 10.1016/j.apsusc.2017.09.038

22. Enhanced photoconductivity of SiGe-trilayer stack by retrenching annealing conditions
Authors: Sultan, MT; Gudmundsson, JT; Manolescu, A; Ciurea, ML; Palade, C; Maraloiu, AV; Svavarsson, HG

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, DOI:

23. Enhanced photocurrent in GeSi NCs / TiO2 multilayers
Authors: Palade, C; Slav, A; Cojocaru, O; Teodorescu, VS; Lazanu, S; Stoica, T; Sultan, MT; Svavarsson, HG; Ciurea, ML

Published: 2018, , DOI:

24. MOS DOSIMETER BASED ON Ge NANOCRYSTALS IN HfO2
Authors: Palade, C; Slav, A; Lepadatu, AM; Stavarache, I; Dascalescu, I; Cojocaru, O; Stoica, T; Ciurea, ML; Lazanu, S

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, DOI:

25. GeSi nanocrystals in SiO2 matrix with extended photoresponse in near infrared
Authors: Stavarache, I; Nedelcu, L; Teodorescu, VS; Maraloiu, VA; Dascalescu, I; Ciurea, ML

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, DOI:

26. The effect of H-2/Ar plasma treatment over photoconductivity of SiGe nanoparticles sandwiched between silicon oxide matrix
Authors: Sultan, MT; Gudmundsson, JT; Manolescu, A; Ciurea, ML; Svavarsson, HG

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, DOI:

27. Optoelectric charging-discharging of Ge nanocrystals in floating gate memory
Authors: Palade, C; Slav, A; Lepadatu, AM; Maraloiu, AV; Dascalescu, I; Iftimie, S; Lazanu, S; Ciurea, ML; Stoica, T

Published: NOV 19 2018, APPLIED PHYSICS LETTERS, 113, 213106, DOI: 10.1063/1.5039554

28. Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors
Authors: Lepadatu, AM; Palade, C; Slav, A; Maraloiu, AV; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, VS; Ciurea, ML

Published: APR 28 2017, NANOTECHNOLOGY, 28, 175707, DOI: 10.1088/1361-6528/aa66b7

29. Influence of preparation conditions on structure and photosensing properties of GeSi/TiO2 multilayers
Authors: Slav, A; Palade, C; Stavarache, I; Teodorescu, VS; Ciurea, ML; Muller, R; Dinescu, A; Sultan, MT; Manolescu, A; Gudmundsson, JT; Svavarsson, HG

Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, DOI:

30. Photosensitive GeSi/TiO2 multilayers in VIS-NIR
Authors: Palade, C; Dascalescu, I; Slav, A; Lepadatu, AM; Lazanu, S; Stoica, T; Teodorescu, VS; Ciurea, ML; Comanescu, F; Muller, R; Dinescu, A; Enuica, A

Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, DOI:

31. Light illumination effects on floating gate memory with Ge nanocrystals in HfO2
Authors: Palade, C; Slav, A; Lepadatu, AM; Lazanu, S; Ciurea, ML; Stoica, T

Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, DOI:

32. Isotactic polypropylene-vapor grown carbon nanofibers composites: Electrical properties
Authors: Aldica, GV; Ciurea, ML; Chipara, DM; Lepadatu, AM; Lozano, K; Stavarache, I; Popa, S; Chipara, M

Published: OCT 10 2017, JOURNAL OF APPLIED POLYMER SCIENCE, 134, 45297, DOI: 10.1002/APP.45297

33. Fast atomic diffusion in amorphous films induced by laser pulse annealing
Authors: Teodorescu, VS; Ghica, C; Maraloiu, AV; Kuncser, A; Lepadatu, AM; Stavarache, I; Ciurea, ML; Scarisoreanu, ND; Andrei, A; Dinescu, M

Published: 2016, 2016 39TH INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), DOI:

34. Non-volatile memory structures with Ge NCs-HfO2 intermediate layer
Authors: Palade, C; Slav, A; Lepadatu, AM; Maraloiu, AV; Lazanu, S; Logofatu, C; Teodorescu, VS; Ciurea, ML

Published: 2016, 2016 39TH INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), DOI:

35. Correlation between strain and defects in Bi implanted Si
Authors: Palade, C; Lepadatu, AM; Slav, A; Ciurea, ML; Lazanu, S

Published: JUN 2016, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 93, DOI: 10.1016/j.jpcs.2016.02.005

36. How morphology determines the charge storage properties of Ge nanocrystals in HfO2
Authors: Slav, A; Palade, C; Lepadatu, AM; Ciurea, ML; Teodorescu, VS; Lazanu, S; Maraloiu, AV; Logofatu, C; Braic, M; Kiss, A

Published: MAR 1 2016, SCRIPTA MATERIALIA, 113, DOI: 10.1016/j.scriptamat.2015.10.028

37. Non-volatile memory devices based on Ge nanocrystals
Authors: Vasilache, D; Cismaru, A; Dragoman, M; Stavarache, I; Palade, C; Lepadatu, AM; Ciurea, ML

Published: FEB 2016, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 213, DOI: 10.1002/pssa.201532376

38. STRAIN DRIVEN CHANGES OF DEFECT PARAMETERS IN HEAVY ION IMPLANTED Si
Authors: Palade, C; Lepadatu, AM; Slav, A; Ciurea, ML; Lazanu, S

Published: OCT-DEC 2015, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 10, DOI:

39. Nanostructuring of GeTiO amorphous films by pulsed laser irradiation
Authors: Teodorescu, VS; Ghica, C; Maraloiu, AV; Vlaicu, M; Kuncser, A; Ciurea, ML; Stavarache, I; Lepadatu, AM; Scarisoreanu, ND; Andrei, A; Ion, V; Dinescu, M

Published: APR 7 2015, BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 6, DOI: 10.3762/bjnano.6.92

40. HfO2 with embedded Ge nanocrystals with memory effects
Authors: Palade, C; Slav, A; Lepadatu, AM; Maraloiu, AV; Teodorescu, VS; Ciurea, ML

Published: 2015, 2015 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), DOI:

41. Tuning the properties of Ge and Si nanocrystals based structures by tailoring the preparation conditions Review
Authors: Ciurea, ML; Lepadatu, AM

Published: JAN-MAR 2015, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 10, DOI:

42. Strain-induced modification of trap parameters due to the stopped ions in Bi-irradiated Si
Authors: Ciurea, ML; Lazanu, S; Slav, A; Palade, C

Published: NOV 2014, EPL, 108, 36004, DOI: 10.1209/0295-5075/108/36004

43. Annealing induced changes in the structure, optical and electrical properties of GeTiO2 nanostructured films
Authors: Stavarache, I; Lepadatu, AM; Teodorescu, VS; Galca, AC; Ciurea, ML

Published: AUG 1 2014, APPLIED SURFACE SCIENCE, 309, DOI: 10.1016/j.apsusc.2014.04.212

44. Electrical properties related to the structure of GeSi nanostructured films
Authors: Ciurea, ML; Stavarache, I; Lepadatu, AM; Pasuk, I; Teodorescu, VS

Published: JUL 2014, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 251, DOI: 10.1002/pssb.201350112

45. GeSiO Based Nanostructures: Electrical Behaviour Related to Morphology and Preparation Method
Authors: Ciurea, ML; Teodorescu, VS; Stavarache, I; Lepadatu, AM

Published: 2014, SIZE EFFECTS IN NANOSTRUCTURES: BASICS AND APPLICATIONS, 205, DOI: 10.1007/978-3-662-44479-5_3

46. Stress Influenced Trapping Processes in Si Based Multi-Quantum Well Structures and Heavy Ions Implanted Si
Authors: Ciurea, ML; Lazanu, S

Published: 2014, INTERNATIONAL CONFERENCE OF COMPUTATIONAL METHODS IN SCIENCES AND ENGINEERING 2014 (ICCMSE 2014), 1618, DOI: 10.1063/1.4897674

47. Numerical Procedure for Optimizing Dye-Sensitized Solar Cells
Authors: Mitroi, MR; Fara, L; Ciurea, ML

Published: 2014, JOURNAL OF NANOMATERIALS, 2014, 378981, DOI: 10.1155/2014/378981

48. Transition in conduction mechanism in GeSi nanostructures
Authors: Palade, C; Lepadatu, AM; Stavarache, I; Teodorescu, VS; Ciurea, ML

Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), DOI:

49. Charge storage properties of HfO2/Ge-HfO2/SiO2 trilayer structures
Authors: Palade, C; Slav, A; Lepadatu, AM; Teodorescu, VS; Ciurea, ML

Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), DOI:

50. Trapping centers in heavy ion irradiated silicon
Authors: Palade, C; Lazanu, S; Ciurea, ML

Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), DOI:

51. Analysis of defect formation in semiconductor cryogenic bolometric detectors created by heavy dark matter
Authors: Lazanu, I; Ciurea, ML; Lazanu, S

Published: APR 2013, ASTROPARTICLE PHYSICS, 44, DOI: 10.1016/j.astropartphys.2013.01.005

52. Conduction mechanism versus annealing in SiO2 films with Ge nanoparticles
Authors: Palade, C; Lepadatu, AM; Stavarache, I; Teodorescu, VS; Ciurea, ML

Published: 2013, 2013 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1-2, DOI:

53. Effect of Bismuth Irradiation on Crystalline Silicon
Authors: Palade, C; Slav, A; Ciurea, ML; Lazanu, S

Published: 2013, 2013 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1-2, DOI:

54. EFFECT OF STRESS ON TRAPPING PHENOMENA IN SILICON: FROM SINGLE CRYSTAL TO NANOSTRUCTURES
Authors: Ciurea, ML

Published: 2013, ROMANIAN REPORTS IN PHYSICS, 65, DOI:

55. Quantum Well Solar Cells: Physics, Materials and Technology
Authors: Ciurea, ML; Lepadatu, AM; Stavarache, I

Published: 2013, ADVANCED SOLAR CELL MATERIALS, TECHNOLOGY, MODELING, AND SIMULATION, DOI: 10.4018/978-1-4666-1927-2.ch003

56. Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2
Authors: Stavarache, I; Lepadatu, AM; Stoica, T; Ciurea, ML

Published: NOV 15 2013, APPLIED SURFACE SCIENCE, 285, DOI: 10.1016/j.apsusc.2013.08.031

57. TRANSMISSION ELECTRON MICROSCOPY STUDY OF Ge NANOPARTICLES FORMED IN GeSiO FILMS BY ANNEALING IN HYDROGEN
Authors: Teodorescu, VS; Maraloiu, AV; Stavarache, I; Lepadatu, AM; Ciurea, ML

Published: OCT-DEC 2013, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 8, DOI:

58. Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion-crystallization process
Authors: Lepadatu, AM; Stoica, T; Stavarache, I; Teodorescu, VS; Buca, D; Ciurea, ML

Published: SEP 15 2013, JOURNAL OF NANOPARTICLE RESEARCH, 15, 1981, DOI: 10.1007/s11051-013-1981-y

59. TRANSPORT MECHANISMS IN SiO2 FILMS WITH EMBEDDED GERMANIUM NANOPARTICLES
Authors: Palade, C; Lepadatu, AM; Stavarache, I; Maraloiu, AV; Teodorescu, VS; Ciurea, ML

Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, DOI:

60. ELECTRICAL BEHAVIOUR RELATED TO STRUCTURE OF NANOSTRUCTURED GeSi FILMS ANNEALED AT 700 degrees C
Authors: Lepadatu, AM; Stavarache, I; Maraloiu, A; Palade, C; Teodorescu, VS; Ciurea, ML

Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, DOI:

61. IODINE IRRADIATION INDUCED DEFECTS IN CRYSTALLINE SILICON
Authors: Slav, A; Lepadatu, AM; Palade, C; Stavarache, I; Iordache, G; Ciurea, ML; Lazanu, S; Mitroi, MR

Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, DOI:

62. Effects produced by iodine irradiation on high resistivity silicon
Authors: Lazanu, S; Slav, A; Lepadatu, AM; Stavarache, I; Palade, C; Iordache, G; Ciurea, ML

Published: DEC 10 2012, APPLIED PHYSICS LETTERS, 101, 242106, DOI: 10.1063/1.4772015

63. Structure and electrical transport in films of Ge nanoparticles embedded in SiO2 matrix
Authors: Stavarache, I; Lepadatu, AM; Maraloiu, AV; Teodorescu, VS; Ciurea, ML

Published: JUL 2012, JOURNAL OF NANOPARTICLE RESEARCH, 14, 930, DOI: 10.1007/s11051-012-0930-5

64. STUDY OF Ge NANOPARTICLES EMBEDDED IN AN AMORPHOUS SiO2 MATRIX WITH PHOTOCONDUCTIVE PROPERTIES
Authors: Lepadatu, AM; Stavarache, I; Stoica, TF; Ciurea, ML

Published: JAN-MAR 2011, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 6, DOI:

65. Stress-induced traps in multilayered structures
Authors: Ciurea, ML; Lazanu, S; Stavarache, I; Lepadatu, AM; Iancu, V; Mitroi, MR; Nigmatullin, RR; Baleanu, CM

Published: JAN 1 2011, JOURNAL OF APPLIED PHYSICS, 109, 013717, DOI: 10.1063/1.3525582

66. Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix
Authors: Stavarache, I; Lepadatu, AM; Gheorghe, NG; Costescu, RM; Stan, GE; Marcov, D; Slav, A; Iordache, G; Stoica, TF; Iancu, V; Teodorescu, VS; Teodorescu, CM; Ciurea, ML

Published: JAN 2011, JOURNAL OF NANOPARTICLE RESEARCH, 13, DOI: 10.1007/s11051-010-0021-4

67. Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride
Authors: Stavarache, I; Lepadatu, AM; Teodorescu, VS; Ciurea, ML; Iancu, V; Dragoman, M; Konstantinidis, G; Buiculescu, R

Published: 2011, NANOSCALE RESEARCH LETTERS, 6, 88, DOI: 10.1186/1556-276X-6-88

68. TRAPPING ASPECTS IN SILICON-BASED NANOSTRUCTURES
Authors: Ciurea, ML

Published: OCT-DEC 2011, PROCEEDINGS OF THE ROMANIAN ACADEMY SERIES A-MATHEMATICS PHYSICS TECHNICAL SCIENCES INFORMATION SCIE, 12, DOI:

69. Numerical analysis of J-V characteristics of a polymer solar cell
Authors: Mitroi, MR; Iancu, V; Fara, L; Ciurea, ML

Published: MAY 2011, PROGRESS IN PHOTOVOLTAICS, 19, DOI: 10.1002/pip.1026

70. Calculation of the quantum efficiency for the absorption on confinement levels in quantum dots
Authors: Iancu, V; Mitroi, MR; Lepadatu, AM; Stavarache, I; Ciurea, ML

Published: APR 2011, JOURNAL OF NANOPARTICLE RESEARCH, 13, DOI: 10.1007/s11051-010-9913-6

71. PREPARATION INDUCED ELECTRICAL BEHAVIOUR OF GeSiO NANOSTRUCTURES
Authors: Stavarache, I; Lepadatu, AM; Ciurea, ML

Published: 2011, 2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2, DOI:

72. PREPARATION AND ELECTRICAL CHARACTERIZATION OF SiGe NANOSTRUCTURES
Authors: Stavarache, I; Lepadatu, AM; Pasuk, I; Teodorescu, VS; Ciurea, ML

Published: 2011, 2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2, DOI:

73. Quantum Confinement in Nanometric Structures
Authors: Ciurea, ML; Iancu, V

Published: 2010, NEW TRENDS IN NANOTECHNOLOGY AND FRACTIONAL CALCULUS APPLICATIONS, DOI: 10.1007/978-90-481-3293-5_5

74. The influence of shape and potential barrier on confinement energy levels in quantum dots
Authors: Lepadatu, AM; Stavarache, I; Ciurea, ML; Iancu, V

Published: FEB 2010, JOURNAL OF APPLIED PHYSICS, 107, 033721, DOI: 10.1063/1.3284083

75. INFLUENCE OF PREPARATION METHOD ON STRUCTURAL PROPERTIES OF GeSiO NANOSYSTEMS
Authors: Stavarache, I; Lepadatu, AM; Teodorescu, V; Stoica, T; Pasuk, I; Stan, G; Iancu, V; Ciurea, ML

Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, DOI: 10.1109/SMICND.2010.5650255

76. TEMPERATURE DEPENDENCE OF CAPTURE COEFFICIENTS IN TRAPPING PHENOMENA
Authors: Lepadatu, AM; Stavarache, I; Lazanu, S; Iancu, V; Mitroi, MR; Nigmatulin, RR; Ciurea, ML

Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, DOI:

77. Semiconductor detectors for high radiation fields: microscopic processes in materials and the control of device parameters
Authors: Lazanu, S; Ciurea, ML; Lazanu, I

Published: DEC 2009, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 11, DOI:

78. INVESTIGATION OF ELECTRICAL PROPERTIES OF CARBON NANOTUBES
Authors: Ciurea, ML; Stavarache, I; Lepadatu, AM; Iancu, V; Dragoman, M; Konstantinidis, G; Buiculescu, R

Published: 2009, CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, DOI: 10.1109/SMICND.2009.5336593

79. Point and extended defects in irradiated silicon and consequences for detectors
Authors: Lazanu, S; Ciurea, ML; Lazanu, I

Published: 2009, PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 8, 6, DOI: 10.1002/pssc.200881434

80. Morphology of Si nanocrystallites embedded in SiO2 matrix
Authors: Teodorescu, VS; Ciurea, ML; Iancu, V; Blanchin, MG

Published: NOV 2008, JOURNAL OF MATERIALS RESEARCH, 23, DOI: 10.1557/JMR.2008.0358

81. Polypyrrole - porous silicon nanocomposites
Authors: Popa, C; Turcu, R; Craciunescu, I; Nan, A; Ciurea, ML; Stavarache, I; Iancu, V

Published: SEP 2008, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 10, DOI:

82. MODELING OF TRAP DISCHARGING PROCESSES IN MULTIPLE QUANTUM WELL STRUCTURES
Authors: Ciurea, ML; Iancu, V; Stavarache, I; Lepadatu, AM; Rusnac, E

Published: 2008, CAS: 2008 INTERNATIONAL SEMICONDUCTOR CONFERENCE, PROCEEDINGS, DOI: 10.1109/SMICND.2008.4703332

83. Defects in silicon: From bulk crystals to nanostructures
Authors: Ciurea, ML; Iancu, V; Lazanu, S; Lepadatu, AM; Rusnac, E; Stavarache, I

Published: 2008, ROMANIAN REPORTS IN PHYSICS, 60, DOI:

84. Trapping phenomena in silicon-based nanocrystalline semiconductors
Authors: Ciurea, ML; Iancu, V; Mitroi, MR

Published: OCT 2007, SOLID-STATE ELECTRONICS, 51, DOI: 10.1016/j.sse.2007.07.002

85. Phototransport and photoluminescence in nanocrystalline porous silicon
Authors: Iancu, V; Ciurea, ML; Stavarache, I; Teodorescu, VS

Published: AUG 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, DOI:

86. Percolation phenomena in Si-SiO2 nanocomposite films
Authors: Stavarache, I; Ciurea, ML

Published: AUG 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, DOI:

87. Quantum confinement model for phototransport processes in nanocrystalline porous silicon
Authors: Ciurea, ML; Stavarache, I; Iancu, V

Published: 2007, 2006 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, DOI:

88. Why the energy levels observed in electrical transport, phototransport and photoluminescence are different?
Authors: Ciurea, ML; Iancu, V

Published: 2007, CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, DOI: 10.1109/SMICND.2007.4519643

89. Some contributions to the understanding of the puzzle of physical processes of degradation in irradiated silicon
Authors: Lazanu, S; Lazanu, I; Ciurea, ML

Published: 2007, CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, DOI:

90. Electronic transport in Si-SiO2 nanocomposite films
Authors: Ciurea, ML; Teodorescu, VS; Iancu, V; Balberg, I

Published: MAY 20 2006, CHEMICAL PHYSICS LETTERS, 423, DOI: 10.1016/j.cplett.2006.03.070

91. Electrical properties of nanocrystalline silicon
Authors: Ciurea, ML

Published: FEB 2006, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 8, DOI:

92. Quantum confinement modeling of electrical and optical processes in nanocrystalline silicon
Authors: Ciurea, ML; Iancu, V; Stavarache, I

Published: DEC 2006, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 8, DOI:

93. Quantum confinement in the photoluminescence of nanocrystalline porous silicon
Authors: Stavarache, I; Ciurea, ML; Iancu, V

Published: 2005, CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE, 1-2, DOI:

94. Quantum confinement in nanocrystalline silicon
Authors: Ciurea, ML

Published: OCT 2005, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7, DOI:

95. Conduction mechanisms in silicon-based nanocomposites
Authors: Iancu, V; Draghici, M; Jdira, L; Ciurea, ML

Published: MAR 2004, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 6, DOI:

96. Microstructure of Si/Sio(2) nanocomposite films
Authors: Teodorescu, VS; Ciurea, ML; Iancu, V; Blanchin, MG

Published: 2004, 2004 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1AND 2, PROCEEDINGS, DOI: 10.1109/SMICND.2004.1402802

97. Influence of crystal growth technology on the tolerance to radiation of silicon for detectors at future accelerators
Authors: Lazanu, S; Lazanu, I; Ciurea, ML

Published: 2004, 2004 International Semiconductor Conference, Vols 1and 2, Proceedings, DOI:

98. Coupled confinement effect on the photoluminescence and electrical transport in porous silicon
Authors: Ciurea, ML; Draghici, M; Iancu, V; Reshotko, M; Balberg, I

Published: MAY 2003, JOURNAL OF LUMINESCENCE, 102, DOI: 10.1016/S2313(02)00589-6

99. Modeling of optical charging spectroscopy investigation of trapping phenomena in nanocrystalline porous silicon
Authors: Iancu, V; Ciurea, ML; Draghici, M

Published: JUL 1 2003, JOURNAL OF APPLIED PHYSICS, 94, DOI: 10.1063/1.1576301

100. Non-equilibrium electronic processes in nanocrystalline silicon
Authors: Ciurea, ML; Iancu, V; Draghici, M; Jdira, L

Published: 2002, ADVANCED TOPICS IN OPTOELECTRONICS, MICROELECTRONICS, AND NANOTECHNOLOGIES, 5227, DOI:

101. Trapping levels in (nc-Si/CaF2)(n) multi-quantum wells
Authors: Ioannou-Sougleridis, V; Nassiopoulou, AG; Ciurea, ML; Bassani, F; d'Avitaya, FA

Published: AUG 20 2001, MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 15, DOI: 10.1016/S0928-4931(01)00215-6

102. Traps in (nc-Si/CaF2)(50) nanostructures
Authors: Draghici, M; Jdira, L; Iancu, V; Ioannou-Sougleridis, V; Nassiopoulou, A; Ciurea, ML

Published: 2001, CAS: 2002 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, DOI:

103. Oxidation-induced modifications of trap parameters in nanocrystalline porous silicon
Authors: Draghici, M; Miu, M; Iancu, V; Nassiopoulou, A; Kleps, I; Angelescu, A; Ciurea, ML

Published: NOV 2000, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 182, DOI: 10.1002/1521-396X(200011)182:1<239::AID-PSSA239>3.3.CO;2-B

104. Trapping levels in nanocrystalline porous silicon
Authors: Ciurea, ML; Draghici, M; Lazanu, S; Iancu, V; Nassiopoulou, A; Ioannou, V; Tsakiri, V

Published: MAY 22 2000, APPLIED PHYSICS LETTERS, 76, DOI: 10.1063/1.126581

105. Electrical properties of nanocrystalline porous silicon
Authors: Ciurea, ML; Iancu, V

Published: 2000, 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, DOI: 10.1109/SMICND.2000.890188

106. Microstructural aspects related to carriers transport properties of nanocrystalline porous silicon films
Authors: Ciurea, ML; Teodorescu, VS; Nistor, LC; Blanchin, MG

Published: SEP 1999, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146, DOI: 10.1149/1.1392507

107. Electrical behaviour of fresh and stored porous silicon films
Authors: Ciurea, ML; Baltog, I; Lazar, M; Iancu, V; Lazanu, S; Pentia, E

Published: JUL 18 1998, THIN SOLID FILMS, 325, DOI: 10.1016/S0040-6090(98)00429-5

108. Theoretical model for carriers transport in nanocrystalline porous silicon films
Authors: Ciurea, ML; Iancu, V; Pavelescu, G; Baltog, I

Published: 1998, CAS'98 PROCEEDINGS - 1998 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 21ST EDITION, VOLS 1 AND 2, DOI:

109. Change of the optical properties of porous silicon by post anodization treatments
Authors: Pavelescu, G; Ciurea, ML; Mihut, L; Galeata, G; Lengyel, E; Baltog, I; Roger, JP

Published: 1998, CAS'98 PROCEEDINGS - 1998 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 21ST EDITION, VOLS 1 AND 2, DOI:

110. On the photoluminescence decay in porous silicon films
Authors: Baltog, I; Ciurea, ML; Pavelescu, G; Mihut, L; Baibarac, M

Published: 1998, FIFTH CONFERENCE ON OPTICS (ROMOPTO '97), PTS 1 AND 2, 3405, DOI: 10.1117/12.312818

111. Quantum confinement model for electric transport phenomena in fresh and stored photoluminescent porous silicon films
Authors: Iancu, V; Ciurea, ML

Published: OCT 1998, SOLID-STATE ELECTRONICS, 42, DOI: 10.1016/S0038-1101(98)00160-9

112. Electrical properties of porous silicon stabilised by storage in ambient
Authors: Ciurea, ML; Lazar, M; Lazanu, S; Pentia, E; Dragoi, V

Published: 1997, CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2, DOI:

113. Visible photoluminescence in porous silicon prepared in different conditions - Temperature dependence and decay
Authors: Ciurea, ML; Pentia, E; Manea, A; BeluMarian, A; Baltog, I

Published: JUN 1996, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 195, DOI: 10.1002/pssb.2221950230

114. Electrical and structural properties of anodized porous silicon
Authors: Ciurea, ML; Pentia, E; Lazar, M; BeluMarian, A; Zavaliche, F; Manaila, R

Published: 1996, CAS '96 PROCEEDINGS - 1996 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 19TH EDITION, VOLS 1 AND 2, DOI:

115. INTERFACE TRAPPING STATES IN MISIM STRUCTURES, WITH ZNS-MN
Authors: PETRE, D; PINTILIE, I; CIUREA, ML; BOTILA, T

Published: MAY 1 1995, THIN SOLID FILMS, 260, DOI: 10.1016/0040-6090(94)06467-9

116. TRAPPING LEVELS IN BI12SIO20 CRYSTALS
Authors: PETRE, D; PINTILIE, I; BOTILA, T; CIUREA, ML

Published: AUG 15 1994, JOURNAL OF APPLIED PHYSICS, 76, DOI: 10.1063/1.357637

117. PHOTOCONDUCTIVITY AND PHOTO-VOLTAIC EFFECTS IN SPUTTERED CDTE THIN-FILMS
Authors: CIUREA, ML; BOTILA, T

Published: 1981, REVUE ROUMAINE DE PHYSIQUE, 26, DOI:

118. LIGHT-INDUCED-CHANGES IN ELECTRICAL-PROPERTIES OF AS3SE2 THIN-FILMS
Authors: BOTILA, T; ALDEA, ML

Published: 1980, JOURNAL OF NON-CRYSTALLINE SOLIDS, 35-6, DOI: 10.1016/0022-3093(80)90343-9

119. TRAPS IN POLYCRYSTALLINE CDTE THIN-FILMS
Authors: CIUREA, ML; BOTILA, T

Published: 1980, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 61, DOI: 10.1002/pssa.2210610220

120. SOME NONEQUILIBRIUM PHENOMENA IN SPUTTERED CDTE THIN-FILMS
Authors: VALENTOVIC, D; CERVENAK, J; LUBY, S; ALDEA, ML; BOTILA, T

Published: 1979, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 56, DOI: 10.1002/pssa.2210560138

121. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Authors: Palade, C; Lepadatu, AM; Slav, A; Cojocaru, O; Iuga, A; Maraloiu, VA; Moldovan, A; Dinescu, M; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: , JOURNAL OF MATERIALS CHEMISTRY C, DOI: 10.1039/d1tc02921e

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