Publications

Cobalt-doped vanadium oxide thin layers prepared by pulsed laser ablation are investigated from the following points of view: (1) the chemical states by X-ray photoelectron spectroscopy (XPS), (2) the local atomic order by X-ray absorption fine structure at both vanadium and cobalt K-edges, (3) the morphology of the films by atomic force microscopy (AFM) and (4) the magnetic properties by magneto-optical Kerr effect (MOKE). The chemical composition of the host matrix was found to be close to VO2 at the sample surface, with V2O3 in the bulk. Co ions are found near the surface in high ionisation states Co4+ (for the samples synthesised in a high vacuum condition, denoted by VO1), or with Co(4-)+ (for the samples synthesised in an oxygen atmosphere, denoted by VO2), whereas in the bulk, Co1.5+ is obtained for VO1 and Co2+ is obtained for VO2. The AFM revealed nanoparticles with sizes 10-25 nm for VO1 samples, whereas a few bigger nanoparticles are observed for VO2 samples. The VO1 samples presented high coercitive fields with a relatively low saturation magnetisation at room temperature, superposed with a superparamagnetic component attributed to the observed nanoparticles, whereas the VO2 samples presented double-loop hysteresis curves, indicating the co-existence of two kinds of magnetic moieties with antiparallel coupling at zero applied field. The proposed two magnetic phases are Co-doped V2O3 and VO2.

The way in which surface changes are transduced into a variation of an electrical parameter (often electrical resistance) depends on the surface oxidation level, material morphology its semiconductor behaviour, etc. Therefore, if one wants to understand more about the way in which gas-surface interactions affect the gas sensing properties of material, complex phenomenological and spectroscopic investigations are needed. Herein, by simultaneous DC and relative work function investigations we could explain the differences induced by the MOX semiconductor character (n and p-type) to the surface phenomena transduction mechanism.

An inciting and much debated subject in the surface enhanced Raman (SERS) studies is an unusual anti-Stokes Raman spectrum distinguished by an abnormal intensity, increasing with the vibrational wavenumber and some discrepancies with regard to the Stokes spectrum. We demonstrate that the abnormal anti-Stokes Raman emission on single walled carbon nanotubes and poly(3,4-ethylenedioxy thiophene) synthtetized electrochemically appears as a consequence of two corroborating effects: resonance, which occurs when the energy of the excitation light is near or coincident with the energy of an electronically allowed transition, and the SERS effect achieved by the excitation of surface plasmons. An abnormal intense Raman emission in the Stokes branch, reminiscent to a stimulated Raman effect, which increases exponentially with the intensity of exciting light is reported for the first time in the case of SWNTs.

We report on the versatility of pulsed laser deposition and radio frequency magnetron sputtering deposition methods to synthesize highly adherent bioactive hydroxyapatite thin layers on cranio-spinal implants as appropriate biofixation alternatives.

Nanocrystals of cubic ZnS (cZnS) doped with 02 % mol Mn2+, self-assembled into a mesoporous structure, have been prepared at room temperature by a surfactant-assisted liquid-liquid reaction The X-ray diffraction measurements confirm the formation of a sponge-like mesoporous structure built from ZnS nanocrystals with cubic (sphalerite) structure and pores of similar diameter of (1 8 +/- 0 2) nm. The Transmission Electron Microscopy (TEM) images show that the mesoporous structure consists of nanocrystals of cZnS with a tight size distribution centered around the average diameter value (21 +/- 0 3) nm The analysis of the observed Election Paramagnetic Resonance (EPR) spectrum demonstrates the presence of the Mn2+ activating ions at isolated sites in the mesoporous material, resulting in three types of paramagnetic centers called Mn2+(I), Mn2+(II) and Mn2+(III) The EPR spectrum of the Mn2+(I) center, attributed to substitutional Mn2+ ions at Zn2+ cation sites in the ZnS nanocrystals, exhibits the smallest linewidth values reported so far, reflecting an increased lattice ordering The high quality of the nanocrystals forming the mesoporous cZnS Mn, as reflected in a tight nanocrystallites size distribution and reduced crystallites lattice disorder, is attributed to the restraining effect of the self-assembling

The temperature dependence of the capture coefficients in trapping phenomena is investigated. It is proved that, besides the dependence induced by the thermal velocity of the carriers, the stress-induced traps at the interfaces of the multi-layered structures present a supplementary temperature dependence. This dependence is found to be of Gaussian type and is in a good agreement with the experimental results.

Multi-layered AlZnO thin films, with wurtzite - type structure and thickness up to 120 nm, as determined by x-ray diffraction and HRTEM, were grown on Si-SiO2 and glass substrates by the sol-gel method. Fluorescence spectroscopy measurements show that 0.5 at. % Al doping determines a blue shift of the emission band observed at 387nm in the undoped material. The room temperature conductivity increases when the number of layers increases, to reach a value of 3.70 (Omega.m)(-1) for a ten layer film. Results obtained by total energy first principles calculations performed on systems with chemical disorder are discussed in relationship with experimental data to account for the effect of Al on the conductivity.

Using europium as sensitive probe for both fluorescence and Mossbauer spectroscopy the morphological changes (local symmetry, covalence, ionicity) induced by the thermal treatments in the YVO(4) nanocrystals (synthesized by direct precipitation method) are put into evidence.

Silicon wafers have been submitted to hydrogen RF-plasma treatment in various experimental conditions The hydrogen RF-plasma treatment on Si wafers induces two kinds of effects surface corrugation and formation of structural defects below the wafer surface The structural defects resulted after the plasma treatments have been investigated by conventional and high-resolution transmission electron microscopy (CTEM and HRTEM) techniques The specificity of the induced extended defects due to hydrogen decoration has been emphasized

Highly oriented (001) AlN (wurtzite type) thin films have been successfully deposited on silicon, platinized silicon and glass substrates by reactive radio-frequency magnetron sputtering at low temperature (150 degrees C). X-ray diffraction, spectroscopic ellipsometry and scanning electron microscopy techniques have been employed to asses the structural characteristics of the AlN films. We have investigated both the influence of AlN film's thickness and of the substrate nature on crystallinity. The thicker films present a better c axis alignment, a minimum orientation dispersion of 3.5. being reached for 1 mu m AlN on silicon. The micro-and macrostrain of the AlN lattice relaxes as the film thickness increases. The film deposited onto platinum has the maximum value of tensile strain along c axis. The film on glass exhibited the poorest texturing and the highest defect concentration. From an optical point of view the film deposited on Pt is the denser one and that deposited on glass is the most rarefied. One can conclude that when using a low deposition temperature and a base pressure of similar to 10(-4) Pa the increase of film thickness leads to improved AlN structure on Si or Pt supports.