National Institute Of Materials Physics - Romania

Two types of solid solutions (i.e, Sn1-xCux/3Sb2x/3O2 and Cu1-xSb2(1-x)Sn3xO6 mixed crystals), have been experimentally evidenced over a large concentration range, in the SnO2 - CuSb2O6 binary system, For these two types of solid solutions, the measured values of the unit cell parameters obey Vegard's rule. The electric and magnetic properties of the Sn0.50Cu0.167Sb0.33O2 and Cu0.923Sb1.836Sn0.231O6 mixed crystals, with compositions placed at the maximum solid solubility limit, on either side, were evaluated over 77 to 1123 K and 2 to sample exhibited semiconducting behaviour, with 300 K, respectively. Sn0.50Cu0.167Sb0.33O2 sample exhibited semiconducting behaviour, with activation energy E-d (eV) and Seebeck coefficient (muV/grd) values close to the values reported for metals, while the Cu0.923Sb1.836Sn0.231O6 sample can be treated as insulators. Short - range magnetic ordering has been evidenced at about 60 K for the CuSb2O6 binary compound and Cu0.923Sb1.836Sn0.231O6 mixed crystal, wiib calculated magnetic moments in good agreement with literature data. In contrast, the Sn0.50Cu0.167Sb0.33O2 mixed crystal presented only a paramagnetic behaviour.

Films of (119) Bi-2223 high-T-c superconductor, potentially useful for future sandwich-stacked structures exhibiting Josephson effect have been prepared by MOCVD on (100) NdGaO3 and (110) SrTiO3 flat and vicinal substrates with different off-angles. It is shown that off-angle is a key parameter in growth control mechanism of the films. In-plane aligned films, with regular morphology and low roughness as well as having maximum zero-resistivity critical temperature: of T-c0=67.2K and T-c0=74K when "single" and "two"-temperature growth routes are used, respectively, have been obtained for high of-angles (20 degrees). Growth mechanism is changing from a two-dimensional type for the flat substrate to a step-flow one for vicinal substrates.

Field effect assisted Thermally Stimulated Currents (TSC) measurements were used to differentiate between electron and hole traps in CdS thin films deposited on SiO2/Si substrate. The electrode configuration was designed as for a pseudo-MOS structure, with drain and source contacts on the CdS film surface and using the Si substrate as gate electrode. Electron or hole traps will be favored to fill-up depending on the polarity of the gate voltage applied during illumination at low temperatures. Collection of the thermally released electrons or holes in the drain circuit will depend also on the polarity of the gate voltage applied during heating at constant rate. Comparing the results with those obtained in case of US films deposited on glass, it is possible to differentiate between SiO2/CdS interface traps and bulk CdS ones.

A surface characterization has been performed on n-type GaAs (Si: GaAs) samples by using X-ray photoelectron spectroscopy (XPS) technique in order to get information on the degree of surface contamination during the device processing steps. The GaAs samples were etched by "in situ" ion sputtering (Ar plasma) before and after carrying out the measurements. According to XPS measurements the native oxide layer on as-received surface contains As2O3, AS(2)O(5) and Ga2O3. Large amounts of C and O are also present at surface before plasma cleaning of surface: C-C bonds, chemisorbed oxygen atoms. The XPS spectra recorded on the surface sample sputtered with 5 keV Ar+ ions were analyzed using SDP subroutines program facilities. After the first sputtering step it was observed different shifts of the principal peaks of GaAs bonding and compounds together with a modification of the relative peak intensities. The C1s and O1s peak size decreased but remained still significant. The following sputtering steps lead to a drastically decrease of C and 0 peaks down to the noise level.

Ag2O-doped (1.2% wt.) nitrate freeze-dried powders (Bi : Pb : Sr : Ca : Cu = 1.7 : 0.3 : 2 : 2.5 : 3.5) were processed under an external electrical field and 17.5 MPa pressure at 800 degreesC, for 4 min in vacuum. Final heat treatments (HT) were applied at 835 - 850 degreesC for 70 h. in air (Bi, Pb)(2)Sr2CaCu2Ox (2212-phase) was formed by electrical field processing in just 4 min. Electrical field application enhanced (Bi, Pb)(2)Sr2Ca2Cu3Oy (2223-phase) formation during final HT. Ag2O additions to field sintered BSCCO ceramics increased the amount of 2223-phase and the zero resistance critical temperature (T-e(R=0)) by similar to 4 k.

The paper presents a review of our data and the current status on synthesis and processing of Bi-2223 superconducting ceramic, by spray frozen, freeze drying method (SF-FD). By this method powders of 200-300 nm were obtained and processed by several different routes to the final superconducting product. Optimization process and comparative analysis with the literature data revealed intrinsic problems associated to the specific nature (i.e high degree of mixing and large surface area relative to the volume) of the SF-FD material. The paper focuses on the effects induced by the specific features of the SF-FD material, sometimes opposite to those observed in the conventional materials produced by solid-state method. It resulted that in order to take full advantage of the specific features for a nano SF-FD material, it is necessary to consider a special, non-conventional, processing approach and some examples in this regard will be presented.

The subject of magnetic anisotropy in nanostructured materials is of considerable interest from both experimental and theoretical points of view. Systems that consist of either isolated or interacting nanoparticles are shown to exhibit different magnetic properties of the nanoparticle surface than those of the bulk. This altering of magnetic behavior is mainly related to surface spins structure cot-related with finite size effects, providing that the nanoparticles are sufficiently small so that the surface-to-volume atomic ratio would be high enough. This work reports on both the simulation and experimental approach on the magnetic behavior of ferromagnetic nanoparticles. We investigate the competition between surface and bulk magnetocrystalline anisotropy in small magnetic particles. The experimentally obtained magnetic data for ferromagnetic core-shell-type AgCo nanoparticles are interpreted consistently with the results of Monte Carlo simulation of the magnetic behavior of single domain nanoparticles.

In this review paper we attempt to summarize the achievements of the near infrared emission studies of negative metal ions (Me-) obtained by nonstandard electrolytical colouring. We present the emission characteristics of Pb--ions aggregates in KCl crystals at 300 and 4.2 K by excitation in the UV and visible range of different laser lines. These centres perturbed by Li+, Na+, Rb+, Ca2+, Sr(2+)and Ba2+ cations, Tl- and Tl- + Ca2+- ions aggregates and the negative aggregates of ln(-) and Ga- in KCl crystals are, also, discused.

Indium Tin Oxide (ITO) thin films have been deposited by the Sol-Gel Dip-Coating technique, the starting solutions being prepared from chlorides. These multilayered films were crystallized by means of a classical heat treatment at temperatures ranging from 500 to 600 degreesC. Five stacked layers are necessary to obtain a global electrical resistivity value of 2.9 x 10(-3) Omega cm, for 500 degreesC annealed film. The paper focuses on the study of the structure of such multilayered deposits, and on the densification process, using transmission electron microscopy, Rutherford Back-scattering Spectrometry and electrical resistivity measurements. This analysis reveals structural inhomogeneities and different crystallite growth processes as a function of annealing temperature and number of deposited layers. (C) 2003 Elsevier B.V. All rights reserved.

The influence of oxygen in silicon on bulk damage effects induced by Co-60-gamma irradiation has been studied in a dose range between 0.2 and 900 Mrad. The detector processing and oxygen enrichment were carried out in a common project by the Institute of Micro-sensors CiS using n-type high-resistivity FZ silicon (3-6 kOmega cm) with <111> and <100> orientation. Different oxygen concentrations were achieved by diffusion at 1150degreesC for 24, 48 and 72 h. This report on bulk damage effects is focussed on the observed changes in the reverse current, the effective space charge density N-eff extracted from C/V measurements and investigations using the transient current technique. A substantial improvement of radiation hardness concerning the development of the macroscopic properties was found for detectors manufactured on oxygenated material compared to standard material. It will be demonstrated that the change of the effective space charge density as well as the increase of the reverse current can be attributed to the creation of two deep acceptor levels and a shallow donor level. (C) 2003 Elsevier B.V. All rights reserved.