Publications

5,974 articles found

4531

Microstructure and mechanical properties of hydroxyapatite thin films grown by RF magnetron sputtering

Nelea, V; Morosanu, C; Iliescu, M; Mihailescu, IN

AUG 22 2003, SURFACE & COATINGS TECHNOLOGY, 173, 322

DOI: 10.1016/S0257-8972(03)00729-1

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Hydroxyapatite (HA) thin films for applications in bone prosthesis fabrication were obtained by the radio-frequency magnetron sputtering technique. The depositions were performed from pure HA targets on Si and Ti-5AI-2.5Fe alloy substrates. In some experiments a buffer layer of TiN was introduced by pulsed laser deposition before HA coating. The films were deposited in low-pressure argon or Ar-O-2 mixtures at substrate temperatures ranging from 70 to 550 degreesC. We observed that the films grown at temperatures below 300 degreesC were prevalently amorphous and contain a small amount of crystalline material. The initial crystalline structure of the target is reconstructed after 1 h films annealing at 550 degreesC in ambient air. Both the films directly deposited at 550 degreesC and the ones obtained at room temperature and after that annealed at this temperature-mostly contain the HA phase and exhibit good mechanical characteristics. Weaker peaks of CaO secondary phase are visible in the X-ray diffraction patterns of the films directly grown at 550 degreesC. Traces of TiO2 were detected at the interface with the metallic substrate in case of structures grown without the TiN interlayer. All films were smooth, with an average surface roughness of 50 nm. The films grown on TiN interlayer are harder, have higher elasticity modulus values and an increased mechanical resistance at the indenter penetration. (C) 2003 Elsevier Science B.V. All rights reserved.

4532

Morphology, structure and optical properties of sol-gel ITO thin films

Stoica, TF; Teodorescu, VS; Blanchin, MG; Stoica, TA; Gartner, M; Losurdo, M; Zaharescu, M

AUG 15 2003, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 101, 226

DOI: 10.1016/S0921-5107(02)00667-0

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The alkoxidic route and the spinning deposition were used to prepare monolayer sol-gel indium tin oxide (ITO) films. The morphology and crystalline structure were investigated by cross-section transmission electron microscopy (XTEM) and atomic force microscopy (AFM). The ITO sol-gel mono-layer contains three regions of different porosities. The basic crystalline structure is that of the In2O3 lattice. The optical properties have been studied by optical transmission and spectroscopic ellipsometry. (C) 2003 Elsevier Science B.V. All rights reserved.

4533

Effect of substitutions on the hyperfine magnetic field in Nd-based intermetallics

Sorescu, M; Valeanu, M; Diamandescu, L

AUG 2003, INTERMETALLICS, 11, 754

DOI: 10.1016/S0966-9795(03)00076-1

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The present work is focused on several 2:17 intermetallic compounds, namely Nd2Fe15Si2, Nd2Fe15Al2, Nd2Fe15SiAl and Nd2Fe15SiMn as well as several 1:12 intermetallic compounds, such as NdFe10Si2, NdFe10Al2, NdFe10SiAl and NdFe10MnAl. The substitutional effect on their magnetic properties is studied by Mossbauer spectroscopy using hyperfine magnetic field distributions. The single-phase structure of both classes of intermetallics was supported by X-ray diffraction (XRD) measurements. (C) 2003 Elsevier Ltd. All rights reserved.

4534

Propane ammoxidation catalyst based on vanadium-aluminum oxynitride

Silvy, RP; Florea, M; Blangenois, N; Grange, P

AUG 2003

DOI: 10.1002/aic.690490830

4535

Exciton-phonon interaction in semiconductors with intermediate polar coupling

Schafer, W; Gartner, P; Jahnke, F

AUG 2003, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 238, 555

DOI: 10.1002/pssb.200303188

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The importance of vertex corrections in the description of the absorption spectra in semiconductors is discussed. These corrections are responsible for the excitonic correlation of the phonon-scattered carriers and it is shown that these correlations are essential for the description of excitonic sidebands in the case of intermediate coupling. Different approximation schemes are compared in numerical examples.

4536

Vortex melting line and anisotropy of high-pressure-synthesized TlBa2Ca2Cu3O10-y high-temperature superconductor from third-harmonic susceptibility studies

Crisan, A; Iyo, A; Tanaka, Y

JUL 21 2003, APPLIED PHYSICS LETTERS, 83, 508

DOI: 10.1063/1.1593824

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The fundamental and third-harmonic susceptibility response of YBa2Cu3O7-delta (YBCO) and TlBa2Ca2Cu3O10-y (Tl:1223) high-critical temperature (T-c) superconductors with preferentially oriented crystallites has been measured in various magnetic fields up to 14 T, and with very low ac field amplitude, to probe the melting transition of the vortex matter. This method does not require large single crystals, being therefore suitable for high-T-c superconductors with small crystallites, prepared with high-pressure synthesis techniques. We determine experimentally the melting line of vortices and the anisotropy factor in high-pressure-grown Tl:1223 with a high T-c of 133.5 K. Results from similar measurements on YBCO with preferentially oriented grains are consistent with both commonly accepted models of the melting line and values of the anisotropy factor, supporting the validity of our approach. (C) 2003 American Institute of Physics.

4537

Modeling of optical charging spectroscopy investigation of trapping phenomena in nanocrystalline porous silicon

Iancu, V; Ciurea, ML; Draghici, M

JUL 1 2003, JOURNAL OF APPLIED PHYSICS, 94, 223

DOI: 10.1063/1.1576301

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A model for trapping phenomena in nanocrystalline silicon investigated by the optical charging spectroscopy method is proposed. The model takes into account all the possible contributions to the discharge current. The results previously obtained on fresh and passivated porous silicon samples are interpreted within the framework of the model, which provides a good fit to the experimental data. The role played by the different kinds of trapping centers (donors and acceptors, surface and bulk) and the different trap parameters is analyzed. (C) 2003 American Institute of Physics.

4538

Magnetism of nanocrystalline Finemet alloy: experiment and simulation

Crisan, O; Greneche, JM; Le Breton, JM; Crisan, AD; Labaye, Y; Berger, L; Filoti, G

JUL 2003, EUROPEAN PHYSICAL JOURNAL B, 34, 162

DOI: 10.1140/epjb/e2003-00207-3

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Mossbauer spectrometry and magnetic measurements are employed to experimentally investigate the magnetic behavior of nanocrystalline Fe73.5Cu1Nb3Si13.5B9 ribbons obtained by appropriate annealing of the amorphous precursor. A detailed analysis of the correlation between the microstructure of annealed samples and their magnetic properties is provided. Thermomagnetic data allow the Curie temperatures of both amorphous residual matrix and nanocrystalline phase to be estimated. The differences between Curie temperatures of amorphous residual matrix and amorphous precursor are investigated and explained in terms of magnetic polarization of the matrix by exchange fields arising from the nanocrystalline grains. Theoretical systems of spins consisting of a single ferromagnetic nanocrystalline grain immersed in weakly ferromagnetic environment, quite similar to our real samples, are considered and their magnetic behavior is investigated by Monte Carlo simulation of low temperature spin ordering, with emphasize on the matrix-nanocrystalline grain interface which is shown to exhibit peculiar magnetic behavior. The magnetic features of the matrix-nanocrystalline grain interface are studied, as depending on matrix-nanocrystalline grain exchange coupling as well as crystalline fraction of the nanocrystalline systems.

4539

Bi influence on growth and physical properties of chemical deposited PbS films

Pentia, E; Pintilie, L; Botila, T; Pintilie, I; Chaparro, A; Maffiotte, C

JUN 23 2003, THIN SOLID FILMS, 434, 170

DOI: 10.1016/S0040-6090(03)00449-8

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PbS films were chemically deposited on glass substrates from chemical reducing bath doped with Bi. The growth and properties of PbS layers are investigated. The effect of the reducer and Bi3+ ions on the deposition process was studied with a quartz-crystal microbalance technique. The reducer introduces a new deposition mechanism of electrochemical nature, which allows for thicker films. On the other hand, Bi3+ ions introduce nucleation centers in the solution (Bi(OH)(3)), which accelerate the homogeneous precipitation and diminish the film thickness. The PbS grain size within the layer increases with increasing the Bi content in the deposition bath. A considerable enhancement of the photoconductive signal was found in case of PbS films deposited from Bi doped bath. The signal has nonlinear behavior with the Bi content in the chemical bath. There is an optimum quantity of Bi for which the photoconductive characteristic reaches maximum. (C) 2003 Elsevier Science B.V. All rights reserved.

4540

Simple model of polarization offset of graded ferroelectric structures

Pintilie, L; Boerasu, I; Gomes, MJM

JUN 15 2003, JOURNAL OF APPLIED PHYSICS, 93, 9967

DOI: 10.1063/1.1577401

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The abnormal polarization offset observed in case of graded ferroelectric structures is explained assuming the presence of a nonreversible part of polarization due to the imposed polarization gradient. It is shown that an upper limit for the offset should exist, fixed by the remnant polarization of the component materials considered as independent layers. This is valid for the structures in which polarization increases or decreases in steps from one layer to the other, but should also be valid for the structures with continuous gradient. However, large values of the charge offset could be achieved in the last case. The electric field dependence of the polarization offset is predicted, together with the possibility of obtaining large nonconventional pyroelectric coefficients. The simulation developed in the case of a bilayer ferroelectric structure and using data from the lead-lanthanum-zirconate-titanate system describes well the observed features of the graded ferroelectric structures. (C) 2003 American Institute of Physics.